DE2734726C2 - - Google Patents

Info

Publication number
DE2734726C2
DE2734726C2 DE19772734726 DE2734726A DE2734726C2 DE 2734726 C2 DE2734726 C2 DE 2734726C2 DE 19772734726 DE19772734726 DE 19772734726 DE 2734726 A DE2734726 A DE 2734726A DE 2734726 C2 DE2734726 C2 DE 2734726C2
Authority
DE
Germany
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE19772734726
Other languages
German (de)
Other versions
DE2734726A1 (en
Inventor
Adrian Ralph Westfield N.J. Us Harman
Hans Pfaffhausen Ch Melchior
David Paul Berkeley Heights N.J. Us Schinke
Richard Grant Basking Ridge N.J. Us Smith
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US05/793,493 external-priority patent/US4127932A/en
Application filed by AT&T Technologies Inc filed Critical AT&T Technologies Inc
Publication of DE2734726A1 publication Critical patent/DE2734726A1/en
Application granted granted Critical
Publication of DE2734726C2 publication Critical patent/DE2734726C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
DE19772734726 1976-08-06 1977-08-02 METHOD OF MANUFACTURING SILICON PHOTODIODES Granted DE2734726A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US71239276A 1976-08-06 1976-08-06
US05/793,493 US4127932A (en) 1976-08-06 1977-05-04 Method of fabricating silicon photodiodes

Publications (2)

Publication Number Publication Date
DE2734726A1 DE2734726A1 (en) 1978-02-09
DE2734726C2 true DE2734726C2 (en) 1987-04-16

Family

ID=27108828

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19772734726 Granted DE2734726A1 (en) 1976-08-06 1977-08-02 METHOD OF MANUFACTURING SILICON PHOTODIODES

Country Status (5)

Country Link
JP (1) JPS5341193A (en)
CA (1) CA1078948A (en)
DE (1) DE2734726A1 (en)
FR (1) FR2360998A1 (en)
GB (1) GB1561953A (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3001899A1 (en) * 1980-01-19 1981-07-23 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Planar phototransistor with concentric zones - has emitter zone, filling majority of base zone except base contacting region
JPS5789271A (en) * 1980-11-25 1982-06-03 Moririka:Kk Compound semiconductor element
JPS57104275A (en) * 1980-12-19 1982-06-29 Nec Corp Light receiving element
US4616247A (en) * 1983-11-10 1986-10-07 At&T Bell Laboratories P-I-N and avalanche photodiodes
CA1301895C (en) * 1989-01-12 1992-05-26 Robert J. Mcintyre Silicon avalanche photodiode with low multiplication noise
JP2002151729A (en) 2000-11-13 2002-05-24 Sony Corp Semiconductor device and its manufacturing method
CN114975672A (en) * 2021-02-26 2022-08-30 中国科学院半导体研究所 Structure and preparation method of back-incident near-infrared enhanced silicon avalanche photodetector

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3244567A (en) * 1962-09-10 1966-04-05 Trw Semiconductors Inc Impurity diffusion method
US3534231A (en) * 1968-02-15 1970-10-13 Texas Instruments Inc Low bulk leakage current avalanche photodiode
US3886579A (en) * 1972-07-28 1975-05-27 Hitachi Ltd Avalanche photodiode
JPS49116957A (en) * 1972-10-25 1974-11-08
JPS5031777A (en) * 1973-07-21 1975-03-28

Also Published As

Publication number Publication date
FR2360998A1 (en) 1978-03-03
DE2734726A1 (en) 1978-02-09
CA1078948A (en) 1980-06-03
FR2360998B1 (en) 1982-04-09
JPS5341193A (en) 1978-04-14
GB1561953A (en) 1980-03-05
JPS6155791B2 (en) 1986-11-29

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Legal Events

Date Code Title Description
OD Request for examination
8127 New person/name/address of the applicant

Owner name: AT & T TECHNOLOGIES, INC., NEW YORK, N.Y., US

8128 New person/name/address of the agent

Representative=s name: BLUMBACH, P., DIPL.-ING., 6200 WIESBADEN WESER, W.

D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee