DE2535813A1 - - Google Patents

Info

Publication number
DE2535813A1
DE2535813A1 DE19752535813 DE2535813A DE2535813A1 DE 2535813 A1 DE2535813 A1 DE 2535813A1 DE 19752535813 DE19752535813 DE 19752535813 DE 2535813 A DE2535813 A DE 2535813A DE 2535813 A1 DE2535813 A1 DE 2535813A1
Authority
DE
Germany
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19752535813
Other languages
German (de)
Other versions
DE2535813B1 (de
DE2535813C2 (de
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to DE19752535813 priority Critical patent/DE2535813C2/de
Publication of DE2535813A1 publication Critical patent/DE2535813A1/de
Publication of DE2535813B1 publication Critical patent/DE2535813B1/de
Application granted granted Critical
Publication of DE2535813C2 publication Critical patent/DE2535813C2/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Recrystallisation Techniques (AREA)
DE19752535813 1975-08-11 1975-08-11 Verfahren zur Herstellung einkristalliner Schichten aus Halbleitermaterial auf einer elektrisch isolierenden Unterlage Expired DE2535813C2 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE19752535813 DE2535813C2 (de) 1975-08-11 1975-08-11 Verfahren zur Herstellung einkristalliner Schichten aus Halbleitermaterial auf einer elektrisch isolierenden Unterlage

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19752535813 DE2535813C2 (de) 1975-08-11 1975-08-11 Verfahren zur Herstellung einkristalliner Schichten aus Halbleitermaterial auf einer elektrisch isolierenden Unterlage

Publications (3)

Publication Number Publication Date
DE2535813A1 true DE2535813A1 (enExample) 1976-11-18
DE2535813B1 DE2535813B1 (de) 1976-11-18
DE2535813C2 DE2535813C2 (de) 1980-11-20

Family

ID=5953753

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19752535813 Expired DE2535813C2 (de) 1975-08-11 1975-08-11 Verfahren zur Herstellung einkristalliner Schichten aus Halbleitermaterial auf einer elektrisch isolierenden Unterlage

Country Status (1)

Country Link
DE (1) DE2535813C2 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10124030A1 (de) * 2001-05-16 2002-11-21 Atmel Germany Gmbh Verfahren zur Herstellung eines Silizium-Wafers
US6720238B2 (en) 2001-05-16 2004-04-13 Atmel Germany Gmbh Method for manufacturing buried areas
US6764923B2 (en) 2001-05-16 2004-07-20 Atmel Germany Gmbh Method for manufacturing components of an SOI wafer

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4448632A (en) * 1981-05-25 1984-05-15 Mitsubishi Denki Kabushiki Kaisha Method of fabricating semiconductor devices
DE3221304A1 (de) * 1982-06-05 1983-12-08 Deutsche Itt Industries Gmbh, 7800 Freiburg Verfahren zum herstellen dielektrisch isolierter festkoerperschaltkreise
FR2572219B1 (fr) * 1984-10-23 1987-05-29 Efcis Procede de fabrication de circuits integres sur substrat isolant
DE3831130A1 (de) * 1988-09-13 1990-03-15 Bosch Gmbh Robert Verfahren zum herstellen von halbleitenden, duennen schichten auf einem isolierenden substrat
DE19845792A1 (de) * 1998-09-21 2000-03-23 Inst Halbleiterphysik Gmbh Verfahren zur Erzeugung einer amorphen oder polykristallinen Schicht auf einem Isolatorgebiet

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10124030A1 (de) * 2001-05-16 2002-11-21 Atmel Germany Gmbh Verfahren zur Herstellung eines Silizium-Wafers
US6716721B2 (en) 2001-05-16 2004-04-06 Atmel Germany Gmbh Method for manufacturing a silicon wafer
US6720238B2 (en) 2001-05-16 2004-04-13 Atmel Germany Gmbh Method for manufacturing buried areas
US6764923B2 (en) 2001-05-16 2004-07-20 Atmel Germany Gmbh Method for manufacturing components of an SOI wafer
DE10124032B4 (de) * 2001-05-16 2011-02-17 Telefunken Semiconductors Gmbh & Co. Kg Verfahren zur Herstellung von Bauelementen auf einem SOI-Wafer

Also Published As

Publication number Publication date
DE2535813B1 (de) 1976-11-18
DE2535813C2 (de) 1980-11-20

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Legal Events

Date Code Title Description
8339 Ceased/non-payment of the annual fee