DE2453637A1 - ARRANGEMENT FOR THE EXPANSION OF NORMAL MAGNETIC AREAS - Google Patents

Description

Arrangement on the propagation of normal magnetic Berelohe

The invention relates to arrangements for propagating normal magnetic regions, in particular for implementation

or digital logical manipulations through storage propagation normal cylindrical magnetic areas in thin single crystal tubes made of ferromagnetic materials.

normal magnetic areas of a generally cylindrical type can readily be formed in the isolated state in relatively thin plates of certain uniaxial aAnLBctaqpei materials such as perrites and garnets, and it is possible to treat these magnetic areas so that logical functions are performed which with digital processing facilities such as ZoB. Storage, logic circuits and data transfer functions are required. The thin plate-shaped material generally shows axes of difficult and tenable magnetizability and has a uniaxial anisotropy perpendicular to the plane of the plate. The normal cylindrical areas behave like isolated volumes in which the magnetic polarization of the ferrimagnetic material in these areas is reversed with respect to the direction of magnetization of the rest of the material, the magnetization vectors preferably being perpendicular to the plane of the plate

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are tet. The normal cylindrical areas are generally useful values of dimensional stability in certain circumstances characterized, outside of these conditions the areas either compressed or uncontrollable stretched, with the smallest areas tending to collapse and then disappear. For one record with optimal thickness, a given magnetic bias field maintains a desired stable small diameter Areas upright, which areas can be defined in general terms as normal areas.

Because the normal magnetic areas under suitable conditions are stable in terms of their location, position and size, they can easily take over data storage functions » When using normal areas with a small diameter, a high bit speloher density can be achieved in simple catfish will. Other functions, such as the fast transmission of a data bit, can be carried out, for example, that an area is moved from a first to a second location, for example by briefly adding a suitable catfish arranged magnetic loop is excited. In this way, shift registers or other digital logic elements are created »

In contrast to the normal generally cylindrical magnetic areas, undesirable areas have been found that are entirely generally classified as "difficult to magnetize" area although "magnetizable" and "medium magnetizable" Ranges are also discussed as isomeric quantities in the literature without any clear fundamental distinctions be taken between these. These two types of undesirable Areas are actually characterized differently in the following description and are known to many th magnetic area materials at the same time as the normal Areas present »Many published experiments show that the areas are abnormal or difficult to magnetize

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readily available from normal areas are distinguishable because they certain undesirable static and dynamic properties have · In particular, behave difficult to magnetize areas deviating from normal ranges in a magnetic field = gradient * abnormal areas move kel at a much slower speed and under considerable Win " on the gradient "These characteristics show the need to avoid the creation and propagation of abnormal areas in practical arrangements * because, for example, it cannot be easily aligned between points" that define a desired path of propagation ", for example from a normal area from one area exciter to one Bereiohsmeßeinrlohtung is run through »Continue to be

and all abnormal areas for other reasons ^ desirable " because they collapse, for example, with magnetic bias fields ^ which are considerably higher than those for normal areas and because they change in size randomly and arbitrarily"

Arrangements for the propagation of normal magnetic areas be ° consist of a layer of garnet material «those on a non-magnetic one Substrate is deposited ο Usable garnet films with uniaxial anisotropy caused by stresses or growth caused directly on the Non-magnetic substrate due to epitaxial liquid phases = Process or by means of chemical vapor deposition will. Endeavoring to create materials., In which Difficult to magnetize or abnormal magnetic areas not are generated ^, two different solutions were examined. In one, epitaxial double and three-sided eyes were made » Garnet films are made, for example, a layer of magnetic material between the non-magnetic substrate and the active area spreading layer became. Although arrangements in which no areas that are difficult to magnetize were created ^ using such multi-

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specialty films have been produced with success _s the production = process is complicated and time-consuming because the process requires multiple films to be grown »

Another method that has been used with some success is the ion implantation <, like ζ.B the implantation "/ on hydrogen ions, in which the general effect of ion bombardment is that the lattice of the garnet is stretched is subjected to forces, can only move in one direction expand so that the rest of the layer is compressed The ion implantation process is due to its peculiarities Applicable only to magnetic grenades, the © ine negative Have magnetostriction so that it is not a universally useful method and so this ion implantation has the Disadvantage that it is only effective with materials whose magnetostriction has the correct sign and the correct size having. Furthermore, in addition to the additional implantation step, there are still further after · = during manufacture share »

An arrangement designed according to the invention for the propagation of normal magnetic regions, which by its nature prevents the generation of abnormal regions that are difficult to magnetize, comprises, according to a basic idea of the invention, a substrate made of non-magnetic material, which is represented by the formula Gd, Ga ^ Og, and a layer of garnet containing normal magnetic regions epitaxially grown on a surface of the non-magnetic substrate, the garnet material being represented by the formula Y Gd R ^ " _x " v

Fe ₂ Xc _"z ° i2 ⁴³⁰¹¹ SEST ⁶¹ It ^is * wherein R is selected from the Yb, Tm, Er and Eu enclosing group of elements, 1st while X of the Ga and Al or mixtures thereof enclosing group of elements selected, and wherein

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0.9 <X <2.0,
0.0 <y <1.5 and
4, Kz <4.6 1st «

According to a further basic idea of the invention, an arrangement for the propagation of normal magnetic areas is created which, by its nature, prevents the generation of abnormal areas that are difficult to magnetize, and which is a substrate made of non-magnetic material, which is represented by the formula Gd ,, Ga ^ O ₁₂ and comprises a layer of garnet containing normal magnetic regions epitaxially grown on a surface of the non-magnetic substrate, the garnet material being represented essentially by the formula Y ₂ Tm ₁ Ga _Q ~ Pe ^ ^ O ^ «

According to the invention there is provided an arrangement for propagating magnetic regions using new materials for the propagation normal cylindrical magnetic area © in digital computer = "and data processing equipment created" The materials are used in thin single crystal layers, di @ epitaxial grown on non-magnetic substrates and which are of such a nature that they encourage the generation of undesirable suppress abnormal areas that are difficult to magnetize "

Further advantageous refinements and developments represent Er = Findings result from the subclaims

The invention is described below with reference to Zelohramg @ n no'eh explained in more detail «

In the drawing show:

1 shows an embodiment of an arrangement for propagation normal magnetic areas;

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⁶ "2A53637

Pig, 2 a table of properties of various compounds, which can be used in the arrangement.

Fig. 1 shows an embodiment of the arrangement when used as a data processing device with a substrate. layer 1 and an active, magnetic areas storing and welter shifting Schioht 2 with a common boundary = sohioht 5 «Each layer 1 or 2 has special properties and special interactions to be described below α The layer 2 has an upper surface 4 (opposite to the boundary layer 2), which normally determined Usual range excitation and measuring elements are assigned ο The magnetic storing or shifting layer can, in general, be the place of any of various above-mentioned digital logical operations, as they are more detailed in patent specifications and other technical literature have been described. For example, in this context, the German publication 25 509 06 of the same An = to be referred to by the notifier «

1 is a diagram of general interest illustrating a shows a fairly simple array that is a fraction of a normally larger array that an active *, magnetic areas storing or shifting Schloht 2 and various devices for excitation, displacement and Measurement of magnetic ranges included the embodiment naoh Figo 1 can be understood as a representation of a shift register 5, which uses a layer 2 of magnetic material, whose preferred direction of slight magnetization is perpendicular to the surface © 4 »The general state of magnetization Shift 2 is indicated by the minus sign, the lines of magnetic flux directed into the surface 4 indicate ο Magnetic flux lines in the magnetic areas that

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are directed in opposite directions are indicated by plus signs ;, such as the plus sign 6 within the conductor loops 7 and 8 shown ο

The conductors 12 ₅ 1> and 14, which are controlled by the Bereiohs = displacement device 9, can be attached to or close to the surface 4 of the magnetic area storage layer 2 in a "selected conventional manner." IJ and 14 respectively connect successive triads of lei ° Tenden grinding, such as, "B", the loops S _c 8a, 8b of a first such triad, etc. _e an array of rows and columns of such Mehrfaoh-loop arrays is used in many cases in Speiohersystemen the Bias field is applied in a conventional manner, for example by using conventional coils (not shown) surrounding the double pole or by using appropriately positioned permanent magnets.

The individual sizes of each loop 8, 8a or 8b appropriately correspond approximately to the size of the cross-section of a normal stable cylindrical magnetic area under representative circumstances "so that any stationary area is largely surrounded by an associated loop B ₀ Ba ₃ 8b"

In operation, the normal magnetic areas are excited or generated by a conventional area excitation device, such as they are shown, for example, by the excitation device 20 is * which is connected to loop 7, which is essentially is arranged coaxially with respect to the loop 8. A stable, cylindrical magnetic area such as the one indicated by the plus = Character 6 area shown can after its generation by the Bereiohserregungseinriohtung 20 and the loop 7 in the usual way step by step in its position or position

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from the place of the sole 8 to the place of the sole 8a and then shifted to the location of the sole 8b etc. * by energizing the conductors 12, IJ, 14 etc. successively by the range shifting device 9. When the expanding magnetic area reaches the sole 8n, it can turn off the sole elf 8n under the control of the Bereiohsmeßeinriohtung 21 and the sole 10 are read out in Ublioher catfish. It it is understood that other digital logic functions can be performed using the same techniques as in the example of Shift register 5 are used, can be easily performed.

A polished disk cut from a non-magnetic single crystal is used as the non-magnetic substrate layer 1 on which the active substance storing garnet is formed in the desirable shape of a large single crystal having a useful magnetic anisotropy and desired crystalline perfection. Od, Ga_ O ₁₂ ^{is a} preferred material for forming the non-magnetic substrate, although other similar materials such as the analogous material (Dy Gd), Qa ₁ -O ₁₂ can be used with success. The very thin single crystal layer 2 storing active magnetic areas can be produced in this way and can be subjected to mechanical processing without there being a serious risk of damage because it is held by the relatively thick magnetic substrate 1 during the processing operations the active surface 4 must go through. The non-magnetic garnet substrate 1 has no direct contribution to the Berelohs propagation function of the surface 2 and can therefore be relatively thick and mechanically stable.

Monocrystals for the formation of the niohtmagnetisohen platethos are made from a molten solution with the help of the customary direct melt process according to Czochralski using a small one

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Single crystal seeds of the desired material pulled and preferably cut with a crystallographic [1HJ orientation ο Duroh this procedure a body is created which is then cut into platelets along the [ill] orientation that have a thickness generally in the range of 0.025 to 0.127 cm, using a conventional diamond or wire saw. The crystallographic alignment is seen using the standard Laue * x-ray retroreflective technique achieved. The [III] crystallographic orientation is preferred for the substrate 1 because it has the desired lattice alignment and uniaxial anisotropy in the material of the active layer 2 is determined. Other orientations can be in used in certain cases *

The Substratplättohen is then "polished to scratches and subsurface damage to the caused to eliminate * by the sawing, _s wherein successively finer powders of abrasive slurries from Materlallen as Z ₀ B ₀ diamond grains, aluminum oxide is used or the like followed by a usual final polishing with colloidal silicon with partial ohms of less than 50 millimicrons follows. The polished platelets are then cleaned using common solvents, dried and stored in dust-free containers »

The active layer 2 is formed on the surface 1 using an epitaxial liquid phase process by immersing such a polished plate from the Gd-. Ga ,. O ₁₀ or other substrate 1 is formed in a suitable molten solution, as is described, for example, in the above-mentioned German Offenlegungsschrift 2 350 906. Usual methods for an epitaxial immersion separation, as described, for example, in patents and other literature, can alternatively be used

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solvent used, the initial immersion temperature and the temperature cooling cycle when immersed in the melt Substrate 1, a desired thin magnetic layer 2 is deposited epitaxially on the boundary layer 3. the strong non-magnetic substrate layer 1 does not eliminate only the problem of fragility of thin unsupported magnetic films but also causes epitaxial crystallization of the magnetic lock material as a regular extension of the structurally identical or almost identical grating of the substrate 1. The desired result is achieved «if the material of the magnetic layer 2 has substantially the same lattice constant and the same thermal properties as comprises the material of the layer 1.

Example I.

A family of materials is created «each in the desired manner, no generation of undesirable or sohwer magnetizable areas in the vicinity of room temperature exhibit. Around a typical epitaxial active area 2 To create, dissolved and dissolving chemicals are balanced in appropriate proportions * after being separated in relation to each other have been checked for their composition and purity. In one Typical examples were the following materials to form a

. Layer of Y _nn Gd _c Yb _n ^ - Fei, _{c Α1} Λ & O ₁₀ is used: 0.9 1.5 4.5 Op ο, ο 12

2.01 grams of Y ₃ O ₃ (yttrium oxide) 5.36 grams of Gd ₀ O, (gadoline sesquioxide) 2.33 grams of Yb ₃ O ₅ (ytterbium oxide) grams of AIpO, (alluminium oxide)

35.51 grams of Fe ₀ O, (iron sesquioxide) 480.00 grams of PbO (lead monoxide) 17 * 30 grams of BgO, (boron oxide).

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After conventional ball milling and roasting in a 100 cm ^ platinum crucible, the material components are melted and held at a temperature of about 95 ° C. while immersing the substrate in the molten mixture for about 3 minutes, the substrate preferably is rotated at about 60 revolutions per minute while the surface of the substrate is immersed in the melt "The BpO, - and PbO materials act as flux" or solvent materials _β

In general, chemically pure materials are used. »There should be no traces of certain undesirable ions in the Chemicals such as silicon in lead oxide or cobalt in the iron oxide. Solo unwanted substances such as magnetically active rare earths or 3-D transition metal " ions other than those of the formula given above, the range « Agility properties of the active Sohloht 2 predominantly affect. Care must be taken in weighing to remove and avoid moisture. Like it nooh As will be explained further, the lack of areas that are difficult to magnetize at room temperatures was also found in connections found that deviates somewhat from the formula given above.

Example II

Other typical compounds for forming the desired epitaxial layer 2 can be approximated by the formula Y _{Q g} Gd ₁

Ti ¹¹¹ «α ^Pe Ji a Al _n τ ^Ga «, »0io using the following bes tendon y ** $ ** v, JL ° * s. Shares are produced

1.02 grams Y ₂ O, 2.19 grams Gd ₂ O, 1.76 grams Tm ₂ O ₅ 1.50 grams Ga ₂ O, 0.23 grams Al ₂ O, 33.19 grams Fe ₃ O ₅ 480, 00 grams of PbO 9 * 00 grams of BgO,

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Procedures and precautions similar to those described in Example I are to be used _o

Example III

Another material that does not have any areas that are difficult to magnetize at room temperature has the formula Y, _n Od ₁ Q Er ₁ Q F @ 2j. c Al ₀ ^ Ga _{0 4} O ₁₂ and can be made from the following components

2 * 24 grams Y ₃ O ₃ 3 * 57 grams 3 * 79 grams 2.11 grams 0.45 grams g 34.72 grams Fe ₃ O-480.00 grams PbO 17 * 30 grams BgO,

As in the previous Examples I and II, a certain change in the proportions of the components used in the melting and immersion process also results in active magnetic Berelohsmaterlallen, which in the environment above room temperature have no areas that are difficult to magnetize <>

Example IV

Another desirable material for the storage and off "propagation of magnetic domains of the invention may werdenο approximated by the formula Y ^ ₅ Gd ₀₇₅ Eu ^ ₇₅ Fe ₄ ^ ₄ Al ^ ₅ Ga ^ ₁ O represented ₁₂ This material is prepared from a mixture ^ which essentially contains the following components *

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3.36 grams Y ₂ ⁰ 3 2.68 grams 2.6l grams 0.48 grams 1 * 57 grams 34.00 grams Pe ₂ O-480.00 grams PbO 17.30 grams B ₂ O

The materials of Examples I to IV can be divided by the general formula Y _x Gd R _5e , _{x <= y} ^Fe Xc ₀₂ ⁰ ^ g ^da , if H from the group of rare earths = elements, dia Yb ₀ Tm , Er and Include Eu is selected, and when X is selected from the group of mente which includes Al and Ga and mixtures thereof »It is further to be recognized that

0.9 <x <1.5 * 0.75 <y <1 * 5 and 4.4 < ζ <4.6o

Example V

A further advantageous example essentially has the formula Y ₂ Tm ₁ Ga ₀ q Fe ^ ^ O ₁₂ , with approximately the following = the constituents being used

4.47 grams Y _o 0.3.80 grams O 5i> 75 grams 29 * 98 grams Pe ₃ O 480.00 grams PbO 17.30 grams BgO,

The manufacture can be done by processes similar to the processes described above in connection with the before = - The materials mentioned above are described in «The material

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of Example V can be epitaxially applied to a non-magnetic substrate, for example by using the general Procedure of Example I can be prepared.

The table according to FIG. 2 shows significant properties of the above materials for storing and forwarding magnetic areas, which contribute to the desired freedom from magnetically hard or difficult to magnetize areas. These properties are inherent in the nature of the compositions and compounds and require the introduction of additional ones nimbly lungs "measures such as ζ example by ion bombardment * It should be noted that the data of Figure 2 are indicated for active Bereiohsausbreitungsmateria" lien which is epitaxially grown on GCU Ga. - 0 ₁₂ = substrates deposited are, with the exception of Example V, where a Dy-substituted Qd, QJ) ₁₀ "substrat is used as" J ₀ The quantity Δ & is expressed in Angstrom units and is a common expression which expresses the extent of the lattice misalignment between the substrate 1 and the active sole 2, with positive numbers indicating that the active layer 2 is under tensile stress o The experimental determination it is between -0.0025 Angstrom units of ika. is sehwia = rig, so that no value is given for A & in example III o The thickness h of the active layer 2 in microns and the magnetic®

Moment 48M _e (where M is the saturation magnetization) in Gauss ss

sin 1 common quantities that are measured in the customary manner «Dia, measured in microns, is a character is Isoher normal = xed length value, which characterizes a single magnetic area. Although the value of this quantity is determined by Übliohe tech "techniques, it is E = O" Ct) / 45ΓΜ ^second in this expression

for X istem the usual measure of the wall energy density of the area and is generally independent of the wall alignment and curvature.

The quantity H ^ and the measuring methods for measuring this quantity are of particular interest ”as reported, for example, by A“ J. Kurtzig

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and F «Β. Hagedom In the reference Ι.Ε.ΞοΕ. Transactions on Magnetics MAG ° 7, 475, 1971 and a * ¹ other places discussed is ο Improved measurement methods based on the method according to Kurtzig and Hagedom by the inventors of this application in the reference AIP Conference Proceedings, 10, 309 (1972) discussed. In general, H ^ is the field to be applied in the plane of layer 2 so that stripe-shaped areas such as those found in a demagnetized film are erased -Oersted is expressed, it is possible to obtain the ratio q »which is equal to KLA ^ FM» Of further interest is the commonly used quantity μ or the magnetic Berelohs mobility, which is measured in cm / Seo «/ Oersted, because materials with high mobility for high-speed computers are desirable ο

It _s that materials, such as having different according to Figo 2 properties that are normally considered for use in oils operating with magnetic fields of arrangements as desired 1st course. In particular, there are high mobilities compared with those that exist in the case of conventional compositions or compounds. Examples II, IV and V have, for example, mobilities of -1000 om / Seco / Oersted or more. Example II shows the unusually high value of 2700 cm / Seco / Oersted ", In addition, a common feature of the materials according to FIG. 2 is that the values of q are all less than 4." In other words, this means that the effective anisotropy field H ^ compared with the magnetic Moment 4JfM _{g is} low "

If, for example, the composition according to Example I is changed from ^Y 0.9 ^Gd 1.5 ^Yb 0.6 ^{A1 0.5 P} % 5 ° 12 ^{to Y} 0.9 ^{0d 1.4 Yb} 0.7 ^A1 0.6 ^p % 4 O ₁₂ if _p then the value of q increases from 2.0 to 5 _f 0

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and hard magnetic areas occur in the region of the room temperature »If the composition of Example III of Y _O9 Gd _l2 Tm ₀ ^ Ga ^ ₃ Al ₀₁ Fe ^ ₆ 0 _χ2 in

Pe ^ 5O _{12 is} changed, then q increases from 1 ^ 6 to 5.6 and there are magnetically hard areas on α

If the composition according to Example III of Y ^ _Q Gd ^ ₀

^Er l _i0 ^Ga O, 4 ^A1 0, l ^Pe 4,5 ° 12 ^{in Y} l, 0 ^Gd l, 0 ^Er l, 0 ⁰³ O ^ H, / ^Pe 4 4 ⁰ IP ^ is changed _ß so increases q start from 2.9 to IS ₅ I an <In the same way changes if the composition of the

in Y ^ ₅

game IV of Y ^ ₅ Gd ^ ₇₅ Eu ^ ₇₅ Al ^ ₅ Q _{%> 1} Fe ₂ ^ ₄ O ₁₂ ^ ₅ Od ₀ Q Eu _{0 7} Al ₀ g Ga _{0 1} Pe ^ 3O _{12 is} changed * q from 3S to 8.1, whereby again undesired magnetically hard areas occur. Thus it can be seen that in example I a shift of 0.1 in the index from Fe to Al together with a shift of 0.1 in the index of Gd to Yb the undesirable magnetically hard Berelohe produced «. In Example II, a shift of 0.1 from Fe to Ga magnetically causes hard areas;> while in Example III the shift is 0.1 from Fe to Ga. In Example IV, a UmO ₁ I shift from Al along with a 0.05 shift from Eu to Gd produces magnetically hard regions

However, theory confirmed by experiments shows that little Changes in the various examples can be made without disturbing the essential properties and without bringing q above 4. It has been found that the requirement that q <4 is the basic requirement, so that magnetically hard areas are suppressed. It goes without saying that the usual requirements must be met Applicable to all usable magnetic Berelohsmaterlallen are, subject to chemical stoichiometry, lattice constant and magnetization requirements,

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The lattice constant requirement is based on the experimental one The fact that a satisfactory film cannot be drawn if not

-0.015 <(a _s - af) <+ 0.010,

where a is the oitter constant of the substrate 1 and a _{f is} the lattice constant of the layer 2 in Angstroms. Because the atomic radii differ, a given change in the proportion of an element generally does not have the same effect as the same change in the Proportion of another element. These changes injäer grid => constant are jedooh readily on the basis besfcä "-saturated experimental results using the Vegar <a ^0's law vorhersagbarο

It can also be seen that the magnetization requirement is related to the composition and, in particular, depends on the amount of the element Fe present in the garnet ₅ , the size 4 JTM increasing by about 140 Gauss for each magnification

increased from 0.1 in the index of Fe in the formula »However, the value of 4FM also depends on the concentration of rare earth ions in the garnet, the contribution of each ion counteracting the resulting Fe magnetization, correspondingly reducing an increase in the Contribution of the tensn earths the determined magnetization in the material * as is well known o The optimal value of the magnetization depends on the application _s for the] f special arrangement working with magnet is «sh © n areas and is normally between 100 and 600 Gauss. However, higher values are used when very small bubbles are required

In summary it can be said * that the connections Insbe special © free of unwanted magnetic hard strokes

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normal operating temperatures and all others are desired Properties show «those for area spreading materials are needed. Nominal changes in the proportions given in the examples are possible

(a) q £ 4

(b) »0.010 Angstrom <Ca ₀ - a _f ) <+0.010 Angstrom (o) 50 <43TM _e <600 Oausso

If definition (a) is violated, hard blisters form; when the relationship (b) is violated, high quality films cannot be formed. In addition, undesirable properties of the arrangement result when the relationship (c) is violated

Claims t

α / ο

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Claims (1)

Patent claims % ί XJ arrangement for the propagation of normal magnetic areas «in which the peculiarity of the generation of abnormally hard magnetic areas is prevented, characterized by a substrate (1) made of non-magnetic material» which is represented by the formula Od, Ga ,. 0 _ is shown, and a layer (2) of normal magnetic areas containing garnet, which is drawn epitaxially onto a surface of the non-magnetic substrate (1), where the garnet = material duroh the formula Υ _χ Od R * ^^ F® _z X ₅ ^ O ₁₂ is where R is selected from the group of elements including Yb, Tm, Er and Eu, while X is selected from the group of elements Oa or Al or mixtures thereof 1st, and where 0.9 <χ <2.0,
0.0 <y <1.5 and
4.1 <ζ <4.6 1st » ο The arrangement according to claim \ _s because I knew that the formula essentially: Y _{n Q} Od _{1 K} Yb _n c Fej, _ Al _n _ 0, _o represented 0.9 1 »5 0, o 4.5 0 ^ 5 a2 ο Arrangement according to Claim I ₁ , characterized in that the formula essentially « ^Y 0.9 ^0d l, 2 ^, 9 ^Pe 4.6 ^A1 0, l ° 12 ^d ^ tellt ₀ ο Arrangement according to claim 1, characterized in that the formula is essentially " η et s" ^Y l, 0 ⁰⁰ I ^ O ^Er l, 0 ^Pe 4,5 509821/0737 5. Arrangement naoh claim 1, daduroh marked = net «that the formula is essentially ^Y 1.5 ^0d 0.75 ^Eu 0.75 ^Pe 4.4 ^{A1 0.5 Oa} D, l ° 12 ^dareteBfc 6. Arrangement for the propagation of normal magnetic areas, at which prevents the generation of abnormal magnetic areas, characterized by a substrate (1) made of non-magnetic material «that duroh the formula Gd., Qa ₁ . O-2 is shown "and a layer (2) of normal magnetic areas leading garnet" which is epitaxially drawn on a surface of the non-magnetic substrate (1) "where the garnet material essentially has the formula Y _g Tm ₁ Ga _{0 g} Fe ^ j O _{12 is} shown. 509821/0737 Blank page