DE2423357A1 - Verfahren zur herstellung von lichtemittierenden halbleiteranordnungen - Google Patents
Verfahren zur herstellung von lichtemittierenden halbleiteranordnungenInfo
- Publication number
- DE2423357A1 DE2423357A1 DE2423357A DE2423357A DE2423357A1 DE 2423357 A1 DE2423357 A1 DE 2423357A1 DE 2423357 A DE2423357 A DE 2423357A DE 2423357 A DE2423357 A DE 2423357A DE 2423357 A1 DE2423357 A1 DE 2423357A1
- Authority
- DE
- Germany
- Prior art keywords
- zinc
- light
- doping
- luminance
- phosphide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000006011 Zinc phosphide Substances 0.000 title claims abstract description 9
- 229940048462 zinc phosphide Drugs 0.000 title claims abstract description 9
- 229910005540 GaP Inorganic materials 0.000 title 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 title 1
- 239000004065 semiconductor Substances 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims abstract description 8
- HOKBIQDJCNTWST-UHFFFAOYSA-N phosphanylidenezinc;zinc Chemical compound [Zn].[Zn]=P.[Zn]=P HOKBIQDJCNTWST-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000002019 doping agent Substances 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims description 25
- 238000009792 diffusion process Methods 0.000 claims description 19
- 150000001875 compounds Chemical class 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 230000000873 masking effect Effects 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims 1
- 239000011701 zinc Substances 0.000 abstract description 18
- 229910052698 phosphorus Inorganic materials 0.000 abstract description 14
- 229910052732 germanium Inorganic materials 0.000 abstract description 7
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052760 oxygen Inorganic materials 0.000 abstract description 5
- 239000001301 oxygen Substances 0.000 abstract description 5
- 230000006872 improvement Effects 0.000 abstract description 3
- 230000008569 process Effects 0.000 abstract description 3
- 230000000052 comparative effect Effects 0.000 abstract 1
- 230000035515 penetration Effects 0.000 abstract 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 17
- 229910052725 zinc Inorganic materials 0.000 description 17
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 13
- 239000011574 phosphorus Substances 0.000 description 13
- 229910052785 arsenic Inorganic materials 0.000 description 10
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 10
- 230000008020 evaporation Effects 0.000 description 7
- 238000001704 evaporation Methods 0.000 description 7
- 230000008901 benefit Effects 0.000 description 5
- 230000031700 light absorption Effects 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910000807 Ga alloy Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 230000001960 triggered effect Effects 0.000 description 2
- 101100189378 Caenorhabditis elegans pat-3 gene Proteins 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- CVXNLQMWLGJQMZ-UHFFFAOYSA-N arsenic zinc Chemical compound [Zn].[As] CVXNLQMWLGJQMZ-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
Landscapes
- Led Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US35984073A | 1973-05-14 | 1973-05-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2423357A1 true DE2423357A1 (de) | 1974-11-28 |
Family
ID=23415506
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2423357A Pending DE2423357A1 (de) | 1973-05-14 | 1974-05-14 | Verfahren zur herstellung von lichtemittierenden halbleiteranordnungen |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPS5017776A (enrdf_load_stackoverflow) |
| DE (1) | DE2423357A1 (enrdf_load_stackoverflow) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3723201A (en) * | 1971-11-01 | 1973-03-27 | Motorola Inc | Diffusion process for heteroepitaxial germanium device fabrication utilizing polycrystalline silicon mask |
-
1974
- 1974-04-30 JP JP4781574A patent/JPS5017776A/ja active Pending
- 1974-05-14 DE DE2423357A patent/DE2423357A1/de active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5017776A (enrdf_load_stackoverflow) | 1975-02-25 |
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