DE2401533A1 - Halbleiteranordnung - Google Patents
HalbleiteranordnungInfo
- Publication number
- DE2401533A1 DE2401533A1 DE2401533A DE2401533A DE2401533A1 DE 2401533 A1 DE2401533 A1 DE 2401533A1 DE 2401533 A DE2401533 A DE 2401533A DE 2401533 A DE2401533 A DE 2401533A DE 2401533 A1 DE2401533 A1 DE 2401533A1
- Authority
- DE
- Germany
- Prior art keywords
- zones
- gate electrode
- zone
- additional
- row
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 157
- 230000005855 radiation Effects 0.000 description 34
- 230000010354 integration Effects 0.000 description 19
- 239000002800 charge carrier Substances 0.000 description 15
- 230000007423 decrease Effects 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000004020 conductor Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000006735 deficit Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910000464 lead oxide Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 1
- 230000021715 photosynthesis, light harvesting Effects 0.000 description 1
- 239000006187 pill Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Measurement Of Radiation (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL7301041A NL7301041A (enrdf_load_stackoverflow) | 1973-01-25 | 1973-01-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2401533A1 true DE2401533A1 (de) | 1974-08-01 |
Family
ID=19818077
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2401533A Pending DE2401533A1 (de) | 1973-01-25 | 1974-01-14 | Halbleiteranordnung |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS531200B2 (enrdf_load_stackoverflow) |
| CA (1) | CA1018637A (enrdf_load_stackoverflow) |
| DE (1) | DE2401533A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2215702B1 (enrdf_load_stackoverflow) |
| GB (1) | GB1457792A (enrdf_load_stackoverflow) |
| IT (1) | IT1005316B (enrdf_load_stackoverflow) |
| NL (1) | NL7301041A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2628820A1 (de) * | 1975-07-10 | 1977-01-27 | Ibm | Ladungsgekoppeltes halbleiterbauelement zur bildabtastung |
| FR2408193A1 (fr) * | 1977-11-04 | 1979-06-01 | United Kingdom Government | Dispositif a semi-conducteur de transmission de signaux, notamment pour convertisseur parallele-serie |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5787275A (en) * | 1981-09-12 | 1982-05-31 | Canon Inc | Information processor |
| JPS6017970U (ja) * | 1983-07-18 | 1985-02-06 | 藤村 良 | 釘打ち用治具 |
| JP2642750B2 (ja) * | 1988-10-20 | 1997-08-20 | キヤノン株式会社 | 半導体装置及びそれを搭載した信号処理装置 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3378688A (en) * | 1965-02-24 | 1968-04-16 | Fairchild Camera Instr Co | Photosensitive diode array accessed by a metal oxide switch utilizing overlapping and traveling inversion regions |
-
1973
- 1973-01-25 NL NL7301041A patent/NL7301041A/xx not_active Application Discontinuation
-
1974
- 1974-01-09 GB GB94274A patent/GB1457792A/en not_active Expired
- 1974-01-14 DE DE2401533A patent/DE2401533A1/de active Pending
- 1974-01-21 CA CA190,598A patent/CA1018637A/en not_active Expired
- 1974-01-22 IT IT7214/74A patent/IT1005316B/it active
- 1974-01-22 FR FR7402064A patent/FR2215702B1/fr not_active Expired
- 1974-01-24 JP JP982874A patent/JPS531200B2/ja not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2628820A1 (de) * | 1975-07-10 | 1977-01-27 | Ibm | Ladungsgekoppeltes halbleiterbauelement zur bildabtastung |
| FR2408193A1 (fr) * | 1977-11-04 | 1979-06-01 | United Kingdom Government | Dispositif a semi-conducteur de transmission de signaux, notamment pour convertisseur parallele-serie |
Also Published As
| Publication number | Publication date |
|---|---|
| IT1005316B (it) | 1976-08-20 |
| FR2215702B1 (enrdf_load_stackoverflow) | 1978-03-31 |
| NL7301041A (enrdf_load_stackoverflow) | 1974-07-29 |
| JPS531200B2 (enrdf_load_stackoverflow) | 1978-01-17 |
| CA1018637A (en) | 1977-10-04 |
| JPS49107189A (enrdf_load_stackoverflow) | 1974-10-11 |
| GB1457792A (en) | 1976-12-08 |
| FR2215702A1 (enrdf_load_stackoverflow) | 1974-08-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE2735651C2 (enrdf_load_stackoverflow) | ||
| DE2143029C3 (de) | Integrierte Halbleiterschutzanordnung für zwei komplementäre Isolierschicht-Feldeffekttransistoren | |
| DE2439799C2 (de) | Ladungsgekoppelte Anordnung, insbesondere Bildsensor | |
| DE102009055322B4 (de) | Halbleitervorrichtung mit einem Transistor mit isoliertem Gate und Diode | |
| DE3104489C2 (enrdf_load_stackoverflow) | ||
| DE2213765C3 (de) | Bildaufnahmevorrichtung mit einem Feldeffekttransistor als Sensor | |
| DE2611338C3 (de) | Feldeffekttransistor mit sehr kurzer Kanallange | |
| EP0179102B1 (de) | Verarmtes halbleiterelement mit einem potential-minimum für majoritätsträger | |
| DE2628532C2 (de) | Halbleiteranordnung | |
| DE2347271C2 (de) | Strahlungsempfindliche Halbleiteranordnung | |
| DE2359720C2 (enrdf_load_stackoverflow) | ||
| DE2412699A1 (de) | Halbleiteranordnung | |
| DE2326751B2 (de) | Halbleiterbauelement zum Speichern und Verfahren zum Betrieb | |
| DE3047738A1 (de) | Halbleiteranordnung | |
| DE19914697A1 (de) | Verarmungs-MOS-Halbleiterbauelement und MOS-Leistungs-IC | |
| DE2623541B2 (de) | Bildaufnahmeanordnung und photoempfindliches Element für eine solche Anordnung | |
| DE2842346A1 (de) | Bildabtaster in festkoerpertechnik | |
| DE2427256A1 (de) | Halbleiteranordnung | |
| DE2144351A1 (de) | Halbleiterbauelement | |
| DE2712479A1 (de) | Ladungsgekoppelte anordnung | |
| DE2252148C3 (de) | Ladungsgekoppelte Halbleiteranordnung und Verfahren zu ihrem Betrieb | |
| DE1614300B2 (de) | Feldeffekttransistor mit isolierter Steuerelektrode | |
| DE2345686A1 (de) | Bildwiedergabe- und/oder -umwandlungsvorrichtung | |
| DE2401533A1 (de) | Halbleiteranordnung | |
| DE3213408A1 (de) | Ladungsgekoppelte anordnung |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OD | Request for examination |