DE2329709A1 - Halbleiterdiode - Google Patents
HalbleiterdiodeInfo
- Publication number
- DE2329709A1 DE2329709A1 DE19732329709 DE2329709A DE2329709A1 DE 2329709 A1 DE2329709 A1 DE 2329709A1 DE 19732329709 DE19732329709 DE 19732329709 DE 2329709 A DE2329709 A DE 2329709A DE 2329709 A1 DE2329709 A1 DE 2329709A1
- Authority
- DE
- Germany
- Prior art keywords
- diffused
- charge carrier
- layer
- substrate
- diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 16
- 239000002800 charge carrier Substances 0.000 claims description 33
- 238000009792 diffusion process Methods 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 13
- 239000002019 doping agent Substances 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 230000007423 decrease Effects 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 239000000344 soap Substances 0.000 claims 1
- 230000007704 transition Effects 0.000 description 16
- 238000001816 cooling Methods 0.000 description 6
- 230000006872 improvement Effects 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000006378 damage Effects 0.000 description 3
- 239000003574 free electron Substances 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 230000010363 phase shift Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 1
- 238000010411 cooking Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/864—Transit-time diodes, e.g. IMPATT, TRAPATT diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US30404772A | 1972-11-06 | 1972-11-06 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2329709A1 true DE2329709A1 (de) | 1974-05-09 |
Family
ID=23174820
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19732329709 Pending DE2329709A1 (de) | 1972-11-06 | 1973-06-12 | Halbleiterdiode |
Country Status (4)
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3328521A1 (de) * | 1983-08-06 | 1985-02-14 | SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg | Epitaxialdiode fuer hohe sperrspannung |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6012796A (ja) * | 1983-07-01 | 1985-01-23 | 松下電工株式会社 | プリント配線板 |
-
1973
- 1973-06-12 DE DE19732329709 patent/DE2329709A1/de active Pending
- 1973-09-05 FR FR7332051A patent/FR2205747B3/fr not_active Expired
- 1973-10-25 NL NL7314664A patent/NL7314664A/xx unknown
- 1973-11-05 JP JP12352373A patent/JPS526149B2/ja not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3328521A1 (de) * | 1983-08-06 | 1985-02-14 | SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg | Epitaxialdiode fuer hohe sperrspannung |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2205747A1 (US20080293856A1-20081127-C00150.png) | 1974-05-31 |
| JPS526149B2 (US20080293856A1-20081127-C00150.png) | 1977-02-19 |
| NL7314664A (US20080293856A1-20081127-C00150.png) | 1974-05-08 |
| FR2205747B3 (US20080293856A1-20081127-C00150.png) | 1976-08-06 |
| JPS4979485A (US20080293856A1-20081127-C00150.png) | 1974-07-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE69631664T2 (de) | SiC-HALBLEITERANORDNUNG MIT EINEM PN-ÜBERGANG, DER EINEN RAND ZUR ABSORPTION DER SPANNUNG ENTHÄLT | |
| DE1944793C3 (de) | Verfahren zur Herstellung einer integrierten Halbleiteranordnung | |
| DE1806624C3 (de) | Photodiode | |
| DE2055162A1 (de) | Verfahren zur Isolationsbereichbil dung im Halbleitersubstrat einer monohthi sehen Halbleitervorrichtung | |
| WO1988002555A1 (en) | Semi-conductor element with a p-region on the anode side and a weakly-doped adjacent n-base region | |
| DE1489031B1 (de) | Transistor mit einem scheibenfoermigen Halbleiterkoerper und Verfahren zu seiner Herstellung | |
| DE1964979C3 (de) | Halbleiterbauelement mit wenigstens einem lateralen Transistor und Verfahren zu seiner Herstellung | |
| DE69936175T2 (de) | Induktivität oder Leiterbahn mit geringem Verlust in einer integrierten Schaltung | |
| DE2500775B2 (de) | Hochspannungsfestes planares Halbleiterbauelement | |
| DE1903870B2 (de) | Verfahren zum herstellen monolithischer halbleiteranordnungen und nach dem verfahren hergestellte halbleiteranordnung | |
| DE1539090B1 (de) | Integrierte Halbleiteranordnung und Verfahren zu ihrer Herstellung | |
| DE1816436A1 (de) | Halbleiterbauelement | |
| DE1639549C2 (de) | Integrierte Halbleiterschaltung | |
| DE2364752A1 (de) | Halbleitervorrichtung | |
| DE3010986A1 (de) | Integrierte halbleiterschaltung | |
| DE2044863A1 (de) | Verfahren zur Herstellung von Schottkydioden | |
| DE2329709A1 (de) | Halbleiterdiode | |
| DE2209534A1 (de) | Micro-Alloy-Epitaxie-Varactor und Verfahren zu dessen Herstellung | |
| DE19938209B4 (de) | Halbleiteranordnung und Verfahren zur Herstellung | |
| DE1489251B1 (de) | Steuerbarerhalbleitergleichrichter | |
| DE2540354A1 (de) | Als thermoionische injektionsdiode geeignete halbleiterstruktur | |
| DE2241083B2 (de) | Hochleistungs-Speicherdiode und Verfahren zu ihrer Herstellung | |
| DE1274245B (de) | Halbleiter-Gleichrichterdiode fuer Starkstrom | |
| DE2147009A1 (de) | Halbleiterbauteil | |
| DE1564427A1 (de) | Doppeldiffusions-Halbleiterelement und Verfahren zur Herstellung desselben |