DE2260091A1 - Thyristor - Google Patents

Thyristor

Info

Publication number
DE2260091A1
DE2260091A1 DE19722260091 DE2260091A DE2260091A1 DE 2260091 A1 DE2260091 A1 DE 2260091A1 DE 19722260091 DE19722260091 DE 19722260091 DE 2260091 A DE2260091 A DE 2260091A DE 2260091 A1 DE2260091 A1 DE 2260091A1
Authority
DE
Germany
Prior art keywords
control
zone
electrode
thyristor
main
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19722260091
Other languages
German (de)
English (en)
Inventor
Jozef Dr Cornu
Andre Dipl Ing Dr Jaecklin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BBC Brown Boveri France SA
Original Assignee
BBC Brown Boveri France SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BBC Brown Boveri France SA filed Critical BBC Brown Boveri France SA
Publication of DE2260091A1 publication Critical patent/DE2260091A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
DE19722260091 1972-11-16 1972-12-08 Thyristor Pending DE2260091A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH1660072A CH552283A (de) 1972-11-16 1972-11-16 Thyristor.

Publications (1)

Publication Number Publication Date
DE2260091A1 true DE2260091A1 (de) 1974-05-30

Family

ID=4418683

Family Applications (2)

Application Number Title Priority Date Filing Date
DE19722260091 Pending DE2260091A1 (de) 1972-11-16 1972-12-08 Thyristor
DE19727245023 Expired DE7245023U (de) 1972-11-16 1972-12-08 Thyristor

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE19727245023 Expired DE7245023U (de) 1972-11-16 1972-12-08 Thyristor

Country Status (4)

Country Link
JP (1) JPS4983389A (xx)
CH (1) CH552283A (xx)
DE (2) DE2260091A1 (xx)
FR (1) FR2207363B1 (xx)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0007099A1 (de) * 1978-07-13 1980-01-23 Licentia Patent-Verwaltungs-GmbH Thyristor mit Amplifying Gate und Verfahren zur Herstellung

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011002479A1 (de) * 2011-01-05 2012-07-05 Infineon Technologies Bipolar Gmbh & Co. Kg Verfahren zur Herstellung eines Halbleiterbauelements mit integriertem Lateralwiderstand

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3297921A (en) * 1965-04-15 1967-01-10 Int Rectifier Corp Controlled rectifier having shunted emitter formed by a nickel layer underneath an aluminum layer
YU31964B (en) * 1967-09-19 1974-02-28 Ckd Praha Visespojni poluprovodni konstruktivni elemenat
US3564357A (en) * 1969-03-26 1971-02-16 Ckd Praha Multilayer semiconductor device with reduced surface current
JPS501990B1 (xx) * 1970-06-02 1975-01-22

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0007099A1 (de) * 1978-07-13 1980-01-23 Licentia Patent-Verwaltungs-GmbH Thyristor mit Amplifying Gate und Verfahren zur Herstellung

Also Published As

Publication number Publication date
CH552283A (de) 1974-07-31
JPS4983389A (xx) 1974-08-10
DE7245023U (de) 1974-08-29
FR2207363A1 (xx) 1974-06-14
FR2207363B1 (xx) 1977-06-03

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