DE212022000255U1 - Leistungshalbleitervorrichtung - Google Patents

Leistungshalbleitervorrichtung Download PDF

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Publication number
DE212022000255U1
DE212022000255U1 DE212022000255.5U DE212022000255U DE212022000255U1 DE 212022000255 U1 DE212022000255 U1 DE 212022000255U1 DE 212022000255 U DE212022000255 U DE 212022000255U DE 212022000255 U1 DE212022000255 U1 DE 212022000255U1
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Germany
Prior art keywords
uniform
profile
channel region
gate
gate insulator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE212022000255.5U
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German (de)
English (en)
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Hitachi Energy Ltd
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Hitachi Energy Ltd
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Filing date
Publication date
Application filed by Hitachi Energy Ltd filed Critical Hitachi Energy Ltd
Publication of DE212022000255U1 publication Critical patent/DE212022000255U1/de
Active legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/683—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being parallel to the channel plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs

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  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
DE212022000255.5U 2021-07-16 2022-07-13 Leistungshalbleitervorrichtung Active DE212022000255U1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP21186132.3 2021-07-16
EP21186132.3A EP4120362A1 (en) 2021-07-16 2021-07-16 Power semiconductor device
PCT/EP2022/069644 WO2023285555A1 (en) 2021-07-16 2022-07-13 Power semiconductor device and production method

Publications (1)

Publication Number Publication Date
DE212022000255U1 true DE212022000255U1 (de) 2024-05-03

Family

ID=76958824

Family Applications (1)

Application Number Title Priority Date Filing Date
DE212022000255.5U Active DE212022000255U1 (de) 2021-07-16 2022-07-13 Leistungshalbleitervorrichtung

Country Status (5)

Country Link
EP (1) EP4120362A1 (https=)
JP (1) JP2024525833A (https=)
CN (1) CN117730417A (https=)
DE (1) DE212022000255U1 (https=)
WO (1) WO2023285555A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102023121453A1 (de) * 2023-08-10 2025-02-13 Infineon Technologies Ag Halbleitervorrichtung mit breiter bandlücke und verfahren zum herstellen einer halbleitervorrichtung mit breiter bandlücke

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6225669B1 (en) 1998-09-30 2001-05-01 Advanced Micro Devices, Inc. Non-uniform gate/dielectric field effect transistor
US6503786B2 (en) 2000-08-08 2003-01-07 Advanced Power Technology, Inc. Power MOS device with asymmetrical channel structure for enhanced linear operation capability
US20150214362A1 (en) 2014-01-29 2015-07-30 SK Hynix Inc. Dual work function buried gate type transistor and method for fabricating the same
US20160064550A1 (en) 2014-09-03 2016-03-03 Toyota Jidosha Kabushiki Kaisha Insulated gate type switching device
US20160104794A1 (en) 2013-06-05 2016-04-14 Denso Corporation Silicon carbide semiconductor device and method for manufacturing same
CN109087951A (zh) 2018-08-23 2018-12-25 深圳市南硕明泰科技有限公司 功率器件及其制备方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4073176B2 (ja) * 2001-04-02 2008-04-09 新電元工業株式会社 半導体装置およびその製造方法
WO2010001201A1 (en) * 2008-06-30 2010-01-07 Freescale Semiconductor, Inc. Method of forming a power semiconductor device and power semiconductor device
DE102011079747A1 (de) * 2010-07-27 2012-02-02 Denso Corporation Halbleitervorrichtung mit Schaltelement und Freilaufdiode, sowie Steuerverfahren hierfür
US11309413B2 (en) * 2019-10-10 2022-04-19 Wolfspeed, Inc. Semiconductor device with improved short circuit withstand time and methods for manufacturing the same

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6225669B1 (en) 1998-09-30 2001-05-01 Advanced Micro Devices, Inc. Non-uniform gate/dielectric field effect transistor
US6503786B2 (en) 2000-08-08 2003-01-07 Advanced Power Technology, Inc. Power MOS device with asymmetrical channel structure for enhanced linear operation capability
US20160104794A1 (en) 2013-06-05 2016-04-14 Denso Corporation Silicon carbide semiconductor device and method for manufacturing same
US20150214362A1 (en) 2014-01-29 2015-07-30 SK Hynix Inc. Dual work function buried gate type transistor and method for fabricating the same
US20160064550A1 (en) 2014-09-03 2016-03-03 Toyota Jidosha Kabushiki Kaisha Insulated gate type switching device
CN109087951A (zh) 2018-08-23 2018-12-25 深圳市南硕明泰科技有限公司 功率器件及其制备方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
J. Robertson, „High dielectric Constant Oxides", im EUROPEAN PHYSICAL JOURNAL APPLIED PHYSICS, Band 28, Nr. 3, 1. Dezember 2004, Seiten 265 bis 291

Also Published As

Publication number Publication date
JP2024525833A (ja) 2024-07-12
WO2023285555A1 (en) 2023-01-19
CN117730417A (zh) 2024-03-19
EP4120362A1 (en) 2023-01-18

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