DE2119764B2 - Schaltungsanordnung zur definierung einer triggerspannung - Google Patents

Schaltungsanordnung zur definierung einer triggerspannung

Info

Publication number
DE2119764B2
DE2119764B2 DE19712119764 DE2119764A DE2119764B2 DE 2119764 B2 DE2119764 B2 DE 2119764B2 DE 19712119764 DE19712119764 DE 19712119764 DE 2119764 A DE2119764 A DE 2119764A DE 2119764 B2 DE2119764 B2 DE 2119764B2
Authority
DE
Germany
Prior art keywords
defining
circuit arrangement
trigger voltage
trigger
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE19712119764
Other languages
English (en)
Other versions
DE2119764A1 (de
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of DE2119764A1 publication Critical patent/DE2119764A1/de
Publication of DE2119764B2 publication Critical patent/DE2119764B2/de
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
    • H03K19/0948—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET using CMOS or complementary insulated gate field-effect transistors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/165—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
    • G01R19/16504—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values characterised by the components employed
    • G01R19/16519—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values characterised by the components employed using FET's
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B1/00—Comparing elements, i.e. elements for effecting comparison directly or indirectly between a desired value and existing or anticipated values
    • G05B1/01—Comparing elements, i.e. elements for effecting comparison directly or indirectly between a desired value and existing or anticipated values electric
    • G05B1/02—Comparing elements, i.e. elements for effecting comparison directly or indirectly between a desired value and existing or anticipated values electric for comparing analogue signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0927—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising a P-well only in the substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Automation & Control Theory (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Measurement Of Current Or Voltage (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE19712119764 1970-04-22 1971-04-22 Schaltungsanordnung zur definierung einer triggerspannung Ceased DE2119764B2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US3064370A 1970-04-22 1970-04-22

Publications (2)

Publication Number Publication Date
DE2119764A1 DE2119764A1 (de) 1971-11-04
DE2119764B2 true DE2119764B2 (de) 1976-07-15

Family

ID=21855207

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19712119764 Ceased DE2119764B2 (de) 1970-04-22 1971-04-22 Schaltungsanordnung zur definierung einer triggerspannung

Country Status (8)

Country Link
US (1) US3628070A (de)
JP (1) JPS5240227B1 (de)
CA (1) CA927933A (de)
DE (1) DE2119764B2 (de)
GB (1) GB1343038A (de)
NL (1) NL7105383A (de)
SE (1) SE364614B (de)
YU (1) YU34569B (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2708021A1 (de) * 1977-02-24 1978-08-31 Eurosil Gmbh Schaltungsanordnung in integrierter cmos-technik zur regelung der speisespannung fuer integrierte schaltungen

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3740580A (en) * 1971-02-13 1973-06-19 Messerschmitt Boelkow Blohm Threshold value switch
FR2143553B1 (de) * 1971-06-29 1974-05-31 Sescosem
US3809926A (en) * 1973-03-28 1974-05-07 Rca Corp Window detector circuit
US3864558A (en) * 1973-05-14 1975-02-04 Westinghouse Electric Corp Arithmetic computation of functions
US3875430A (en) * 1973-07-16 1975-04-01 Intersil Inc Current source biasing circuit
JPS5410228B2 (de) * 1973-08-20 1979-05-02
JPS5046374A (de) * 1973-08-30 1975-04-25 Toyo Kogyo Co
JPS5619751B2 (de) * 1974-10-01 1981-05-09
GB1475841A (en) * 1974-04-24 1977-06-10 Suwa Seikosha Kk Electronic timepiece
JPS5651590B2 (de) * 1974-09-24 1981-12-07
DE2447104C2 (de) * 1974-10-02 1986-01-02 Intersil Inc., Cupertino, Calif. Schaltungsanordnung zur Stromstabilisierung
JPS5148362A (ja) * 1974-10-24 1976-04-26 Suwa Seikosha Kk Denshidokei
JPS5159662A (ja) * 1974-11-05 1976-05-24 Suwa Seikosha Kk Denshidokei
JPS5158382A (ja) * 1974-11-18 1976-05-21 Suwa Seikosha Kk Denatsuhikakuki
JPS5169665A (ja) * 1974-12-13 1976-06-16 Suwa Seikosha Kk Denshidokei
JPS5172476A (ja) * 1974-12-20 1976-06-23 Seiko Instr & Electronics Denatsukenshutsusochi
JPS51138847A (en) * 1975-05-28 1976-11-30 Hitachi Ltd Standard voltage generating circuit
JPS5235851A (en) * 1975-09-16 1977-03-18 Seiko Instr & Electronics Ltd Power source voltage detection circuit
JPS5291472A (en) * 1976-01-28 1977-08-01 Seiko Instr & Electronics Ltd Voltage detection circuit
NL176322C (nl) * 1976-02-24 1985-03-18 Philips Nv Halfgeleiderinrichting met beveiligingsschakeling.
US4100437A (en) * 1976-07-29 1978-07-11 Intel Corporation MOS reference voltage circuit
US4140930A (en) * 1976-07-30 1979-02-20 Sharp Kabushiki Kaisha Voltage detection circuit composed of at least two MOS transistors
JPS5326175A (en) * 1976-08-23 1978-03-10 Seiko Instr & Electronics Ltd Electronic watch
US4322639A (en) * 1976-08-26 1982-03-30 Hitachi, Ltd. Voltage detection circuit
JPS53118986A (en) * 1977-03-28 1978-10-17 Seiko Instr & Electronics Ltd Semiconductor device
US4318013A (en) * 1979-05-01 1982-03-02 Motorola, Inc. High voltage detection circuit
US4300065A (en) * 1979-07-02 1981-11-10 Motorola, Inc. Power on reset circuit
JPS5719676A (en) * 1981-06-01 1982-02-01 Seiko Epson Corp Voltage detecting circuit
JPS5719677A (en) * 1981-06-01 1982-02-01 Seiko Epson Corp Voltage detecting circuit
JPS5914795Y2 (ja) * 1982-10-14 1984-05-01 セイコーエプソン株式会社 電圧検出回路
US4613768A (en) * 1984-11-13 1986-09-23 Gte Communication Systems Corp. Temperature dependent, voltage reference comparator/diode
JPS61221812A (ja) * 1985-03-27 1986-10-02 Mitsubishi Electric Corp 電圧発生回路
US4821096A (en) * 1985-12-23 1989-04-11 Intel Corporation Excess energy protection device
US5095348A (en) * 1989-10-02 1992-03-10 Texas Instruments Incorporated Semiconductor on insulator transistor
FR2729762A1 (fr) * 1995-01-23 1996-07-26 Sgs Thomson Microelectronics Circuit de detection de tension compense en technologie et en temperature
DE19909063A1 (de) * 1999-03-02 2000-09-07 Siemens Ag Stromgesteuerte Schaltstufe für Digitalschaltungen
US6304108B1 (en) * 2000-07-14 2001-10-16 Micrel, Incorporated Reference-corrected ratiometric MOS current sensing circuit
DE102014112001A1 (de) * 2014-08-21 2016-02-25 Infineon Technologies Austria Ag Integrierte Schaltung mit einem Eingangstransistor einschließlich einer Ladungsspeicherstruktur

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3119938A (en) * 1962-01-05 1964-01-28 Norman J Metz Bistable trigger circuit
US3260863A (en) * 1964-03-19 1966-07-12 Rca Corp Threshold circuit utilizing field effect transistors
US3275996A (en) * 1965-12-30 1966-09-27 Rca Corp Driver-sense circuit arrangement
US3449594A (en) * 1965-12-30 1969-06-10 Rca Corp Logic circuits employing complementary pairs of field-effect transistors
US3322974A (en) * 1966-03-14 1967-05-30 Rca Corp Flip-flop adaptable for counter comprising inverters and inhibitable gates and in cooperation with overlapping clocks for temporarily maintaining complementary outputs at same digital level

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2708021A1 (de) * 1977-02-24 1978-08-31 Eurosil Gmbh Schaltungsanordnung in integrierter cmos-technik zur regelung der speisespannung fuer integrierte schaltungen

Also Published As

Publication number Publication date
NL7105383A (de) 1971-10-26
CA927933A (en) 1973-06-05
GB1343038A (en) 1974-01-10
JPS465322A (de) 1971-11-29
JPS5240227B1 (de) 1977-10-11
YU97871A (en) 1979-02-28
DE2119764A1 (de) 1971-11-04
SE364614B (de) 1974-02-25
YU34569B (en) 1979-09-10
US3628070A (en) 1971-12-14

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Legal Events

Date Code Title Description
BHV Refusal