DE2064427C3 - Magnetoelektronische Halbleiteranordnung - Google Patents
Magnetoelektronische HalbleiteranordnungInfo
- Publication number
- DE2064427C3 DE2064427C3 DE19702064427 DE2064427A DE2064427C3 DE 2064427 C3 DE2064427 C3 DE 2064427C3 DE 19702064427 DE19702064427 DE 19702064427 DE 2064427 A DE2064427 A DE 2064427A DE 2064427 C3 DE2064427 C3 DE 2064427C3
- Authority
- DE
- Germany
- Prior art keywords
- magnetic
- semiconductor
- magnetoelectronic
- layer
- electrical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims description 333
- 230000005291 magnetic effect Effects 0.000 claims description 327
- 239000000463 material Substances 0.000 claims description 102
- 206010010144 Completed suicide Diseases 0.000 claims description 57
- 239000000126 substance Substances 0.000 claims description 44
- 230000003287 optical effect Effects 0.000 claims description 35
- 229910021332 silicide Inorganic materials 0.000 claims description 34
- 239000000696 magnetic material Substances 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 31
- 230000008569 process Effects 0.000 claims description 28
- 239000004020 conductor Substances 0.000 claims description 26
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 26
- 150000001875 compounds Chemical class 0.000 claims description 23
- 239000007787 solid Substances 0.000 claims description 23
- 239000000203 mixture Substances 0.000 claims description 16
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 14
- 230000005855 radiation Effects 0.000 claims description 11
- 150000002910 rare earth metals Chemical class 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 9
- 229910052732 germanium Inorganic materials 0.000 claims description 8
- SCCCLDWUZODEKG-UHFFFAOYSA-N germanide Chemical compound [GeH3-] SCCCLDWUZODEKG-UHFFFAOYSA-N 0.000 claims description 7
- 229910000859 α-Fe Inorganic materials 0.000 claims description 7
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 230000005693 optoelectronics Effects 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 230000001939 inductive effect Effects 0.000 claims description 3
- 239000006104 solid solution Substances 0.000 claims description 3
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 2
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 2
- 229910052689 Holmium Inorganic materials 0.000 claims description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 2
- 229910052771 Terbium Inorganic materials 0.000 claims description 2
- 230000003321 amplification Effects 0.000 claims description 2
- 239000003989 dielectric material Substances 0.000 claims description 2
- 230000005284 excitation Effects 0.000 claims description 2
- 239000012212 insulator Substances 0.000 claims description 2
- 150000002739 metals Chemical class 0.000 claims description 2
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 2
- 229910005557 Gd—Si Inorganic materials 0.000 claims 1
- 239000002019 doping agent Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 275
- 239000013078 crystal Substances 0.000 description 48
- 230000005415 magnetization Effects 0.000 description 28
- 230000004907 flux Effects 0.000 description 23
- 230000006698 induction Effects 0.000 description 23
- 230000000694 effects Effects 0.000 description 19
- 230000006870 function Effects 0.000 description 18
- 230000008859 change Effects 0.000 description 13
- 230000005294 ferromagnetic effect Effects 0.000 description 11
- 230000007704 transition Effects 0.000 description 9
- 101100400378 Mus musculus Marveld2 gene Proteins 0.000 description 8
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- 230000005540 biological transmission Effects 0.000 description 5
- 239000002800 charge carrier Substances 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 229910052772 Samarium Inorganic materials 0.000 description 4
- 230000009471 action Effects 0.000 description 4
- 230000005290 antiferromagnetic effect Effects 0.000 description 4
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- 238000004891 communication Methods 0.000 description 3
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- 238000005859 coupling reaction Methods 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 3
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- 239000002784 hot electron Substances 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000002441 reversible effect Effects 0.000 description 3
- 230000005418 spin wave Effects 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000000712 assembly Effects 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000012549 training Methods 0.000 description 2
- 230000001960 triggered effect Effects 0.000 description 2
- 101150110188 30 gene Proteins 0.000 description 1
- 241000566113 Branta sandvicensis Species 0.000 description 1
- 101100346656 Drosophila melanogaster strat gene Proteins 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 244000292411 Excoecaria agallocha Species 0.000 description 1
- 241001465754 Metazoa Species 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 238000010314 arc-melting process Methods 0.000 description 1
- 244000052616 bacterial pathogen Species 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000002772 conduction electron Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000009133 cooperative interaction Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 210000003608 fece Anatomy 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 230000005307 ferromagnetism Effects 0.000 description 1
- 239000003337 fertilizer Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000009415 formwork Methods 0.000 description 1
- UFQRYMPMKZKVCK-UHFFFAOYSA-N germanium terbium Chemical compound [Ge].[Tb] UFQRYMPMKZKVCK-UHFFFAOYSA-N 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000010871 livestock manure Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 230000005226 mechanical processes and functions Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000005298 paramagnetic effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000010587 phase diagram Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000036316 preload Effects 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 230000035943 smell Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 229910002058 ternary alloy Inorganic materials 0.000 description 1
- 210000002105 tongue Anatomy 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C28/00—Alloys based on a metal not provided for in groups C22C5/00 - C22C27/00
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
- G11C13/06—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam using magneto-optical elements
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Hall/Mr Elements (AREA)
- Compounds Of Iron (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19702064427 DE2064427C3 (de) | 1970-12-30 | 1970-12-30 | Magnetoelektronische Halbleiteranordnung |
| NL7115828A NL7115828A (enExample) | 1970-12-30 | 1971-11-17 | |
| FR7145391A FR2120797A5 (enExample) | 1970-12-30 | 1971-12-17 | |
| GB5883371A GB1318010A (en) | 1970-12-30 | 1971-12-17 | Magnetoelectronic semiconductor arrangements |
| IT3276071A IT944240B (it) | 1970-12-30 | 1971-12-22 | Disposizione magneto elettronica a semiconduttori |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19702064427 DE2064427C3 (de) | 1970-12-30 | 1970-12-30 | Magnetoelektronische Halbleiteranordnung |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE2064427A1 DE2064427A1 (de) | 1972-07-20 |
| DE2064427B2 DE2064427B2 (de) | 1974-11-14 |
| DE2064427C3 true DE2064427C3 (de) | 1975-06-19 |
Family
ID=5792553
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19702064427 Expired DE2064427C3 (de) | 1970-12-30 | 1970-12-30 | Magnetoelektronische Halbleiteranordnung |
Country Status (5)
| Country | Link |
|---|---|
| DE (1) | DE2064427C3 (enExample) |
| FR (1) | FR2120797A5 (enExample) |
| GB (1) | GB1318010A (enExample) |
| IT (1) | IT944240B (enExample) |
| NL (1) | NL7115828A (enExample) |
-
1970
- 1970-12-30 DE DE19702064427 patent/DE2064427C3/de not_active Expired
-
1971
- 1971-11-17 NL NL7115828A patent/NL7115828A/xx unknown
- 1971-12-17 GB GB5883371A patent/GB1318010A/en not_active Expired
- 1971-12-17 FR FR7145391A patent/FR2120797A5/fr not_active Expired
- 1971-12-22 IT IT3276071A patent/IT944240B/it active
Also Published As
| Publication number | Publication date |
|---|---|
| DE2064427B2 (de) | 1974-11-14 |
| GB1318010A (en) | 1973-05-23 |
| IT944240B (it) | 1973-04-20 |
| FR2120797A5 (enExample) | 1972-08-18 |
| NL7115828A (enExample) | 1972-07-04 |
| DE2064427A1 (de) | 1972-07-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C3 | Grant after two publication steps (3rd publication) | ||
| E77 | Valid patent as to the heymanns-index 1977 | ||
| EHJ | Ceased/non-payment of the annual fee |