DE2048189C2 - Electroluminescent semiconductor diode - Google Patents
Electroluminescent semiconductor diodeInfo
- Publication number
- DE2048189C2 DE2048189C2 DE19702048189 DE2048189A DE2048189C2 DE 2048189 C2 DE2048189 C2 DE 2048189C2 DE 19702048189 DE19702048189 DE 19702048189 DE 2048189 A DE2048189 A DE 2048189A DE 2048189 C2 DE2048189 C2 DE 2048189C2
- Authority
- DE
- Germany
- Prior art keywords
- zone
- low
- contact
- diode
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims description 23
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 4
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 3
- 229910052711 selenium Inorganic materials 0.000 claims description 3
- 239000011669 selenium Substances 0.000 claims description 3
- 229910052714 tellurium Inorganic materials 0.000 claims description 3
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 7
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Description
Die Erfindung betrifft eine elektrolumineszierende Halbleiterdiode nach dem Oberbegriff des Patentanspruchs. The invention relates to an electroluminescent semiconductor diode according to the preamble of the patent claim.
Eine derartige Halbleiterdiode ist z. B. aus der DE-AS 11 94 493 bekannt. Bei dieser Halbleiterdiode ist der erste Metallkontakt ein Ringkontakt, wodurch die Lichtausbeute herabgesetzt wird. Außerdem ist der flächenförmige, zweite Kontakt für die Abführung auch größerer Wärmemengen wenig geeignet.Such a semiconductor diode is z. B. from DE-AS 11 94 493 known. In this semiconductor diode is the first Metal contact a ring contact, which reduces the light output. In addition, the planar, second contact is not very suitable for the dissipation of even larger amounts of heat.
Aus »Phys. Rev.« 137 (1965), A 1583 bis A 1590, sind noch elektrolumineszierende Halbleiterdioden bekannt, deren aus einem AmBv-Material bestehender Halbleitereinkristall mit Selen und Tellur dotiert ist.From »Phys. Rev. «137 (1965), A 1583 to A 1590, electroluminescent semiconductor diodes are still known, the semiconductor single crystal of which consists of an A m B v material and is doped with selenium and tellurium.
Der Erfindung liegt die Aufgabe zugrunde, eine elektrolumineszierende Halbleiterdiode anzugeben, die bei hoher Lichtausbeute eine gute Wärmeabführung gewährleistet, so daß eine lange Betriebsdauer ohne Änderung der optischen und elektrischen Eigenschaften möglich ist.The invention is based on the object of an electroluminescent Specify semiconductor diode, which guarantees good heat dissipation with high luminous efficiency, so that a long service life without changing the optical and electrical properties is possible.
Diese Aufgabe wird bei einer Halbleiterdiode nach dem Oberbegriff des Patentanspruchs erfindungsgemäß durch die in dessen kennzeichnendem Teil enthaltenen Merkmale gelöst.This object is achieved according to the invention with a semiconductor diode according to the preamble of the patent claim solved by the features contained in its characterizing part.
Durch die Erfindung wird zusätzlich zu einer hohen Lichtausbeute und einer guten Wärmeabführung auch erreicht, daß die Oberfläche der elektrolumineszierenden Halbleiterdiode, die beispielsweise aus Galliumarsenid besteht, das wegen der gering zu haltenden Absorption des vom pn-übergang emittierten Lichtes relativ hochohmig ist, in einer dünnen Oberflächenschicht durch Diffusion oder Metallbedampfung niederohmig gemacht und dadurch die Oberfläche stabilisiert wird. Zugleich wird ein Getter gegen verschiedene, die Oberfläche und das Volumen beeinflussende Elemente geschaffen, die die Alterung der lichtaussendenden Halbleiterdiode hervorrufen.As a result of the invention, in addition to a high light yield and good heat dissipation, too achieved that the surface of the electroluminescent semiconductor diode, for example made of gallium arsenide exists, which is relatively due to the low absorption of the light emitted by the pn junction is high resistance, low resistance in a thin surface layer by diffusion or metal vapor deposition made and thereby the surface is stabilized. At the same time there is a getter against different, the surface and the volume influencing elements created that the aging of the light-emitting semiconductor diode cause.
Weitere Merkmale und Einzelheiten der Erfindung ergeben sich aus der nachfolgenden Beschreibung eines bevorzugten Ausführungsbeispiels an Hand der Figur.Further features and details of the invention emerge from the following description of a preferred embodiment with reference to the figure.
Die in der Figur schematisch im Schnitt dargestellte lichtaussendende Halbleiterdiode besteht aus einer einen lichtaussendenden pn-Übergang bildenden p-Zone 2 und einer n-Zone 1. Zur Verhinderung der Absorptionsverluste wird ein AlnBv-Halbleitermaterial verwendet, dessen effektiver Bandabstand größer ist, als der Energie des am pn-Übergang entstandenen Lumineszenzlichtes entspricht. Diese Energie wird durch den effektiven Bandabstand in der p-Zone bestimmt und das Licht dringt durch die n-Zone 1 der Diode nach außen. Auf der die Lichtaustrittsoberfläche der die Diode bildenden Zone, in diesem Ausführungsbeispiel also der n-Zone 1 der Diode, ist zur Stabilisierung dieser Diodenoberfläche eine dünne lichtdurchlässige niederohmige Halbleiterschicht aufgebracht, die den gleichen Leitfähigkeitstyp aufweist wie das Materia! der die Lichtaustrittsoberfläche bildenden Zone. In diesem Ausführungsbeispiel ist die dünne niederohmige Halbleiterschicht eine eindiffundierte η+ -Schicht, die durch Eindiffusion von beispielsweise Selen oder Tellur erzeugt wird und in der Figur mix dem Bezugszeichen 3 versehen ist. Sowohl die dünne niederohmige Halbleiterschicht 3 als auch die p-Zone 2 der Diode ist mit Metallkontakten zum Anlegen einer Spannung in Flußrichtung versehen. Da das im pn-Übergang der Halbleiterdiode erzeugte Licht durch die n-Zone 1 und die η + -Schicht 3 nach außen gelangt, ist der auf die niederohmige Halbleiterschicht 3 aufgebrachte Metallkontakt 5 am Rand der die Lichtaustrittsoberfläche der n-Zone 1 bedeckenden η+ -Schicht 3 als Punktkontakt ausgebildet und besteht aus Zinn oder Gold. Da durch die p-Zone 2 der Diode kein Licht nach außen gelangt, ist die Oberfläche dieser Zone mit einem Metallkontakt 4 versehen, der die Oberfläche der p-Zone 2 ganzflächig bedeckt. Dieser Flächenkontakt 4 ist eine vergoldete Grundplatte, die gleichzeitig zur Abführung der beim Betrieb der Diode entstehenden Wärme dient.The light-emitting semiconductor diode shown schematically in section in the figure consists of a p-zone 2, which forms a light-emitting pn junction, and an n-zone 1. To prevent absorption losses, an A ln B v semiconductor material is used, the effective band gap of which is greater, than corresponds to the energy of the luminescent light created at the pn junction. This energy is determined by the effective band gap in the p-zone and the light penetrates through the n-zone 1 of the diode to the outside. On the light exit surface of the zone forming the diode, in this embodiment the n-zone 1 of the diode, a thin, translucent, low-resistance semiconductor layer is applied to stabilize this diode surface, which has the same conductivity type as the material! the zone forming the light exit surface. In this exemplary embodiment, the thin, low-resistance semiconductor layer is a diffused η + layer, which is produced by diffusion of selenium or tellurium, for example, and is provided with the reference number 3 in the mix figure. Both the thin, low-resistance semiconductor layer 3 and the p-zone 2 of the diode are provided with metal contacts for applying a voltage in the flow direction. Since the light generated in the pn junction of the semiconductor diode passes through the n-zone 1 and the η + layer 3 to the outside, the metal contact 5 applied to the low-resistance semiconductor layer 3 is at the edge of the η + that covers the light exit surface of the n-zone 1 -Layer 3 designed as a point contact and consists of tin or gold. Since no light reaches the outside through the p-zone 2 of the diode, the surface of this zone is provided with a metal contact 4, which covers the entire surface of the p-zone 2. This surface contact 4 is a gold-plated base plate which simultaneously serves to dissipate the heat generated during operation of the diode.
Hierzu 1 Blatt Zeichnungen1 sheet of drawings
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19702048189 DE2048189C2 (en) | 1970-09-30 | 1970-09-30 | Electroluminescent semiconductor diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19702048189 DE2048189C2 (en) | 1970-09-30 | 1970-09-30 | Electroluminescent semiconductor diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2048189A1 DE2048189A1 (en) | 1972-04-06 |
| DE2048189C2 true DE2048189C2 (en) | 1984-07-05 |
Family
ID=5783870
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19702048189 Expired DE2048189C2 (en) | 1970-09-30 | 1970-09-30 | Electroluminescent semiconductor diode |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE2048189C2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1582063A (en) * | 1976-11-22 | 1980-12-31 | Mitsubishi Monsanto Chem | Electroluminescent element and method of fabricating the same |
| DE3043581A1 (en) * | 1980-11-19 | 1982-06-03 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Semiconductor devices, esp. opto-electronic components - where metal layer with high work function forms enhancement zone in semiconductor, esp. for laser diodes or Leds |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1194493B (en) * | 1962-02-09 | 1965-06-10 | Telefunken Patent | Coating-free surface electrode for a pn-electroluminescent light source |
-
1970
- 1970-09-30 DE DE19702048189 patent/DE2048189C2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE2048189A1 (en) | 1972-04-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |