DE2030367B2 - Verfahren zur herstellung einer epitaktisch aus eienr a tief iii btief v verbindung gewachsenen schicht - Google Patents

Verfahren zur herstellung einer epitaktisch aus eienr a tief iii btief v verbindung gewachsenen schicht

Info

Publication number
DE2030367B2
DE2030367B2 DE19702030367 DE2030367A DE2030367B2 DE 2030367 B2 DE2030367 B2 DE 2030367B2 DE 19702030367 DE19702030367 DE 19702030367 DE 2030367 A DE2030367 A DE 2030367A DE 2030367 B2 DE2030367 B2 DE 2030367B2
Authority
DE
Germany
Prior art keywords
btief
eienr
tief
iii
compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19702030367
Other languages
English (en)
Other versions
DE2030367A1 (de
DE2030367C3 (de
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP4918569A external-priority patent/JPS4925630B1/ja
Priority claimed from JP4918169A external-priority patent/JPS4925629B1/ja
Application filed filed Critical
Publication of DE2030367A1 publication Critical patent/DE2030367A1/de
Publication of DE2030367B2 publication Critical patent/DE2030367B2/de
Application granted granted Critical
Publication of DE2030367C3 publication Critical patent/DE2030367C3/de
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/08—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/10—Controlling or regulating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/263—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using melted materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2911—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3221—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3248—Layer structure consisting of two layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3442—N-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3444—P-type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/915—Amphoteric doping

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Led Devices (AREA)
DE2030367A 1969-06-20 1970-06-19 Verfahren zur Herstellung einer epitaktisch aus einer A tief III B tief V -Verbindung gewachsenen Schicht Expired DE2030367C3 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP4918569A JPS4925630B1 (de) 1969-06-20 1969-06-20
JP4918169A JPS4925629B1 (de) 1969-06-20 1969-06-20

Publications (3)

Publication Number Publication Date
DE2030367A1 DE2030367A1 (de) 1971-01-14
DE2030367B2 true DE2030367B2 (de) 1972-03-16
DE2030367C3 DE2030367C3 (de) 1975-07-17

Family

ID=26389549

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2030367A Expired DE2030367C3 (de) 1969-06-20 1970-06-19 Verfahren zur Herstellung einer epitaktisch aus einer A tief III B tief V -Verbindung gewachsenen Schicht

Country Status (5)

Country Link
US (1) US3676228A (de)
DE (1) DE2030367C3 (de)
FR (1) FR2046941B1 (de)
GB (1) GB1286753A (de)
NL (1) NL161919C (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3879235A (en) * 1973-06-11 1975-04-22 Massachusetts Inst Technology Method of growing from solution materials exhibiting a peltier effect at the solid-melt interface
US4012242A (en) * 1973-11-14 1977-03-15 International Rectifier Corporation Liquid epitaxy technique
JPS512393A (de) * 1974-06-24 1976-01-09 Hitachi Ltd
US3963536A (en) * 1974-11-18 1976-06-15 Rca Corporation Method of making electroluminescent semiconductor devices
US4086608A (en) * 1975-11-28 1978-04-25 The United States Of America As Represented By The Secretary Of The Navy Light emitting diode
US4384398A (en) * 1981-10-26 1983-05-24 Bell Telephone Laboratories, Incorporated Elimination of silicon pyramids from epitaxial crystals of GaAs and GaAlAs
JPS58156598A (ja) * 1982-03-09 1983-09-17 Semiconductor Res Found 結晶成長法
IL101966A (en) * 1992-05-22 1998-04-05 Ramot Ramatsity Authority For PROCESS FOR FABRICATING Gallium Arsenide p-i-n STRUCTURE
KR102318743B1 (ko) 2014-12-23 2021-10-28 인텔 코포레이션 비평면 반도체 디바이스의 서브핀에 사용하기 위한 iii-v족 반도체 합금 및 그 형성 방법
EP3238230A4 (de) * 2014-12-23 2018-08-22 INTEL Corporation Diffusionstolerante iii-v-halbleiterheterostrukturen und vorrichtungen damit
WO2019147602A1 (en) 2018-01-29 2019-08-01 Northwestern University Amphoteric p-type and n-type doping of group iii-vi semiconductors with group-iv atoms

Also Published As

Publication number Publication date
NL7008176A (de) 1970-12-22
US3676228A (en) 1972-07-11
DE2030367A1 (de) 1971-01-14
DE2030367C3 (de) 1975-07-17
FR2046941B1 (de) 1976-04-16
FR2046941A1 (de) 1971-03-12
NL161919B (nl) 1979-10-15
GB1286753A (en) 1972-08-23
NL161919C (nl) 1980-03-17

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)
E77 Valid patent as to the heymanns-index 1977
8328 Change in the person/name/address of the agent

Free format text: KADOR, U., DIPL.-CHEM. DR.RER.NAT. KLUNKER, H., DIPL.-ING. DR.RER.NAT. SCHMITT-NILSON, G., DIPL.-ING. DR.-ING. HIRSCH, P., DIPL.-ING., PAT.-ANW., 8000 MUENCHEN

8328 Change in the person/name/address of the agent

Free format text: KLUNKER, H., DIPL.-ING. DR.RER.NAT. SCHMITT-NILSON, G., DIPL.-ING. DR.-ING. HIRSCH, P., DIPL.-ING., PAT.-ANW., 8000 MUENCHEN