DE2023828A1 - Steuerbare Halbleiter-Gleichrichtervorrichtung und Verfahren zu ihrer Herstellung - Google Patents
Steuerbare Halbleiter-Gleichrichtervorrichtung und Verfahren zu ihrer HerstellungInfo
- Publication number
- DE2023828A1 DE2023828A1 DE19702023828 DE2023828A DE2023828A1 DE 2023828 A1 DE2023828 A1 DE 2023828A1 DE 19702023828 DE19702023828 DE 19702023828 DE 2023828 A DE2023828 A DE 2023828A DE 2023828 A1 DE2023828 A1 DE 2023828A1
- Authority
- DE
- Germany
- Prior art keywords
- zone
- region
- area
- zones
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 25
- 238000000034 method Methods 0.000 title claims description 7
- 239000000463 material Substances 0.000 claims description 16
- 239000002800 charge carrier Substances 0.000 claims description 13
- 238000009413 insulation Methods 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 238000009792 diffusion process Methods 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 239000002019 doping agent Substances 0.000 claims description 4
- 230000000149 penetrating effect Effects 0.000 claims description 4
- 238000001556 precipitation Methods 0.000 claims 1
- 230000007704 transition Effects 0.000 description 6
- 230000000903 blocking effect Effects 0.000 description 5
- 230000003247 decreasing effect Effects 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- PQNFLJBBNBOBRQ-UHFFFAOYSA-N indane Chemical compound C1=CC=C2CCCC2=C1 PQNFLJBBNBOBRQ-UHFFFAOYSA-N 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 101100400378 Mus musculus Marveld2 gene Proteins 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- HZEWFHLRYVTOIW-UHFFFAOYSA-N [Ti].[Ni] Chemical compound [Ti].[Ni] HZEWFHLRYVTOIW-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/192—Base regions of thyristors
- H10D62/206—Cathode base regions of thyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/60—Gate-turn-off devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
- H10D62/148—Cathode regions of thyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
- H10D64/233—Cathode or anode electrodes for thyristors
Landscapes
- Thyristors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB2537069 | 1969-05-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2023828A1 true DE2023828A1 (de) | 1970-11-26 |
Family
ID=10226581
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19702023828 Pending DE2023828A1 (de) | 1969-05-19 | 1970-05-15 | Steuerbare Halbleiter-Gleichrichtervorrichtung und Verfahren zu ihrer Herstellung |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS5026272B1 (enrdf_load_stackoverflow) |
| DE (1) | DE2023828A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2043519B1 (enrdf_load_stackoverflow) |
| GB (1) | GB1303812A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3446789A1 (de) * | 1984-12-21 | 1986-07-03 | SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg | Verfahren zum herstellen von halbleiterbauelementen |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5150679A (ja) * | 1974-10-30 | 1976-05-04 | Hitachi Ltd | Handotaisochi |
| JPS5482856U (enrdf_load_stackoverflow) * | 1977-11-25 | 1979-06-12 |
-
1969
- 1969-05-19 GB GB2537069A patent/GB1303812A/en not_active Expired
-
1970
- 1970-05-15 FR FR7017772A patent/FR2043519B1/fr not_active Expired
- 1970-05-15 DE DE19702023828 patent/DE2023828A1/de active Pending
- 1970-05-19 JP JP45042148A patent/JPS5026272B1/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3446789A1 (de) * | 1984-12-21 | 1986-07-03 | SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg | Verfahren zum herstellen von halbleiterbauelementen |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2043519A1 (enrdf_load_stackoverflow) | 1971-02-19 |
| JPS5026272B1 (enrdf_load_stackoverflow) | 1975-08-29 |
| FR2043519B1 (enrdf_load_stackoverflow) | 1974-10-31 |
| GB1303812A (enrdf_load_stackoverflow) | 1973-01-24 |
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