DE202023105215U1 - Solar module - Google Patents

Abstract

Solar module comprising:
a plurality of groups of laser processing tracks, each group having a laser processing track of a first type and a laser processing track of a second type;
wherein a surface of the solar module has a first location and a second location;
wherein a surface portion of the surface, which is arranged between the first location and the second location, has a maximum distance of more than 100 μm from an imaginary straight line through the first location and the second location;
in particular, the first location and the second location each lie in a module area of one of the groups and the module area has a length that is at least 20 cm in a longitudinal direction.

Description

TECHNICAL FIELD

The present disclosure relates to the field of solar modules.

BACKGROUND

EP 1 918 994 A1 describes a thin-film solar module with a substrate and three thin layers deposited thereon, which is divided into structural units that are separated from each other by transition regions. When irradiated with light, the conversion of light into electrical energy takes place in the structural units, while the electrical interconnection and contacting of the structural units takes place in the transition areas. For this purpose, the thin-film solar module has traces in the transition areas in which the material of a thin layer is removed and optionally replaced by another material, such as the material of an overlying layer or a conductor, such as silver. In the transition areas, several tracks lie next to each other in a specific sequence. The adjacent tracks must not cross each other, otherwise electrical short circuits could occur that would render one or more of the structural units unusable. Every time a thin layer is deposited, the substrate is heated and thereby permanently deformed. As a result of this deformation, previously straight tracks become distorted. In order to be able to produce thin-film solar modules with improved efficiency, the course of an existing track is determined before or during the introduction of a new track and, when the new track is introduced, the course of the new track is regulated relative to the course of the existing track.

SUMMARY

In view of the situation described above, there may be a need for a technique that allows to provide a solar module and a method of manufacturing the same with improved characteristics.

This need can be taken into account through the independent claims. Some advantageous embodiments are specified in the dependent claims.

According to a first aspect of the subject matter disclosed herein, a solar module is provided.

According to an embodiment of the first aspect, there is provided a solar module, the solar module comprising: a plurality of groups of laser processing tracks, each group having a laser processing track of a first type and a laser processing track of a second type; wherein the solar module has a module area that extends in a longitudinal direction over a length of at least 20 cm; each of the laser processing tracks having a width that varies along the laser processing track; wherein for each of the laser processing tracks, the width within longitudinal sections of the relevant laser processing track defines an average width of each longitudinal section; wherein the average width of at least a portion of the longitudinal sections within the module area defines a width variation; and wherein the width variation is less than 10 μm and/or the width variation is less than 50% of an average of the average widths of the longitudinal sections that define the width variation.

According to a further embodiment of the first aspect, there is provided a solar module, the solar module comprising: a plurality of groups of laser processing tracks, each group having a laser processing track of a first type and a laser processing track of a second type; wherein the solar module has a module area that extends in a longitudinal direction over a length of at least 20 cm; wherein for each group, the first type laser processing track and the second type laser processing track of the respective group have a center distance from one another which varies within the module range and which defines a distance variation for the respective group; wherein for at least a portion of the plurality of groups the distance variation is less than 15 µm; and/or for at least a portion of the plurality of groups the distance variation is smaller than 90% of an average of the center distances that define the distance variation.

According to a further embodiment of the first aspect, there is provided a solar module, the solar module comprising: a plurality of groups of laser processing tracks, each group having a laser processing track of a first type and a laser processing track of a second type; wherein the solar module has a module area that extends in a longitudinal direction over a length of at least 20 cm; wherein the first type laser processing tracks of two of the groups have a center distance from each other that varies within the module range and defines a group distance variation; wherein for at least a portion of the plurality of groups, the group spacing variation between the first type laser processing tracks of adjacent groups is less than 15 µm; and/or for at least part of the plurality of groups, the group distance variation between the laser processing tracks of the first type of adjacent groups is less than 5% of an average of the center distances that define the group distance variation.

According to a further embodiment of the first aspect, there is provided a solar module, the solar module comprising: a plurality of groups of laser processing tracks, each group having a laser processing track of a first type and a laser processing track of a second type; wherein a surface of the solar module has a first location and a second location; wherein a surface portion of the surface, which is arranged between the first location and the second location, has a maximum distance of more than 100 μm from an imaginary straight line through the first location and the second location; in particular, the first location and the second location each lie in a module area of one of the groups and the module area has a length that is at least 20 cm in a longitudinal direction.

According to a second aspect of the subject matter disclosed herein, a method of manufacturing a solar module is provided.

According to an embodiment of the second aspect, there is provided a method for manufacturing a solar module according to the first aspect or at least one embodiment thereof, the method comprising: generating the plurality of groups of laser processing tracks using laser radiation; Effecting the width variation less than 10 μm and/or the width variation less than 50% of an average of the average widths of the longitudinal sections defining the width variation by at least one of the following (i) monitoring a power of the laser radiation; (ii) controlling the power of the laser radiation; (iii) determining a focus position of the laser radiation along a propagation direction of the laser radiation; (iv) Controlling the focus position of the laser radiation along the direction of propagation.

According to a further embodiment of the second aspect, there is provided a method for manufacturing a solar module according to the first aspect or at least one embodiment thereof, the method comprising: generating the plurality of groups of laser processing tracks using laser radiation; Effecting the distance variation of less than 15 µm and/or the distance variation that is, for at least a portion of the plurality of groups, less than 90% of an average of the center distances defining the distance variation is by at least one of the following: (i) monitoring a power of the laser radiation; (ii) controlling the power of the laser radiation; (iii) determining a focus position of the laser radiation along a propagation direction of the laser radiation; (iv) Controlling the focus position of the laser radiation along the direction of propagation.

1. (a) Überwachen einer Leistung der Laserstrahlung;
2. (b) Regeln der Leistung der Laserstrahlung;
3. (c) Bestimmen einer Fokuslage der Laserstrahlung längs einer Ausbreitungsrichtung der Laserstrahlung;
4. (d) Regeln der Fokuslage der Laserstrahlung längs der Ausbreitungsrichtung;
5. (e) Verwendung einer Tiefenschärfe der Laserstrahlung von mehr als 20 µm, beispielsweise mehr als 100 µm (gemäß einer Ausführungsform liegt die Tiefenschärfe der Laserstrahlung in einem Bereich zwischen 20 µm und 1000 µm);
6. (f) Erfassung eines Abstands zwischen einer Maschinenkomponente, welche die Laserstrahlung abgibt, und dem Solarmodul;
7. (g) Erfassung eines Abstands zwischen einer Maschinenkomponente, welche die Laserstrahlung abgibt, und dem Solarmodul mit einer Erfassungsrate von mehr als 10 Hz, beispielsweise mehr als 50 Hz, mehr als 200 Hz, mehr als 1000 Hz oder mehr als 2000 Hz (gemäß einer Ausführungsform liegt die Erfassungsrate einem Intervall zwischen 10 Hz und 2500 Hz);
8. (h) Regelung eines Abstands zwischen einer Maschinenkomponente, welche die Laserstrahlung abgibt, und dem Solarmodul;
9. (i) Regelung eines Abstands zwischen einer Maschinenkomponente, welche die Laserstrahlung abgibt, und dem Solarmodul mit einer Zykluszeit von kleiner als 100 ms, beispielsweise kleiner als 50 ms, kleiner als 10 ms, kleiner als 5 ms, kleiner als 2 ms oder kleiner als 0,5 ms (gemäß einer Ausführungsform liegt die Zykluszeit in einem Bereich zwischen 0,1 ms und 100 ms), beispielsweise 5 ms;
10. (j) räumliches Positionieren des Solarmoduls in eine mechanisch definierte Zwangslage.

According to a further embodiment of the second aspect, a method for producing a solar module according to the first aspect or at least one embodiment thereof is provided, the method comprising generating the plurality of groups of laser processing tracks using laser radiation, further comprising at least one of the following:

1. (a) monitoring a power of the laser radiation;
2. (b) controlling the power of the laser radiation;
3. (c) determining a focus position of the laser radiation along a propagation direction of the laser radiation;
4. (d) regulating the focus position of the laser radiation along the direction of propagation;
5. (e) using a depth of field of the laser radiation of more than 20 µm, for example more than 100 µm (according to one embodiment, the depth of field of the laser radiation is in a range between 20 µm and 1000 µm);
6. (f) detecting a distance between a machine component that emits the laser radiation and the solar module;
7. (g) detecting a distance between a machine component that emits the laser radiation and the solar module with a detection rate of more than 10 Hz, for example more than 50 Hz, more than 200 Hz, more than 1000 Hz or more than 2000 Hz (according to a Embodiment, the acquisition rate is an interval between 10 Hz and 2500 Hz);
8. (h) controlling a distance between a machine component that emits the laser radiation and the solar module;
9. (i) Control of a distance between a machine component that emits the laser radiation and the solar module with a cycle time of less than 100 ms, for example less than 50 ms, less than 10 ms, less than 5 ms, less than 2 ms or less than 0.5 ms (according to one embodiment, the cycle time is in a range between 0.1 ms and 100 ms), for example 5 ms;
10. (j) spatial positioning of the solar module in a mechanically defined constraint.

DESCRIPTION OF EXEMPLARY EMBODIMENTS

Although certain disadvantages of prior technologies are mentioned herein, the claimed subject matter is not intended to be limited to implementations that address some or all of the noted disadvantages of the prior technologies. Further, although certain advantages of the subject matter disclosed herein are mentioned or implied in the present disclosure, the claimed subject matter is not intended to be limited to implementations having some or all of these advantages.

In this application, the term “in particular” always refers to optional features. Furthermore, the expression “A and/or B” usually always includes “only A”, “only B” and also “A and B”. In an expression that refers to a list of characteristics, “at least one” always includes the individual characteristics and any combination of the characteristics. For example, the expression “at least one of the features A and B” includes the features “only A”, “only B”, as well as “A and B”. Analogously, the expression “at least one of the features A or B” also includes the features “only A”, “only B”, as well as “A and B”. Analogously, the expression “at least one of the features A, B” also includes the features “only A”, “only B”, as well as “A and B”.

Percentages are given here with the % sign. The following units are used: Meter = m; Centimeter = cm, millimeter = mm, micrometer = µm; nanometer = nm; Hertz = Hz; second = s; Millisecond = ms.

According to an embodiment of the first aspect, a solar module has a plurality of groups of laser processing tracks. According to a further embodiment, each group has a laser processing track of a first type and a laser processing track of a second type.

According to a further embodiment, the solar module has a module area that extends in a longitudinal direction over a length of at least 20 cm. According to a further embodiment, the module area extends in the longitudinal direction over a length of at least 40 cm, for example over a length of at least 50 cm or a length of 70 cm. According to a further embodiment, the module area extends over the entire extent of the laser processing tracks in the longitudinal direction.

According to one embodiment, each of the laser processing tracks has a width that varies along the laser processing track. For example, each of the laser processing tracks extends in a longitudinal direction and the width varies along the longitudinal direction of the laser processing track. According to one embodiment, for each of the laser processing tracks, the (varying) width within longitudinal sections of the relevant laser processing track defines an average width of the relevant longitudinal section.

For example, according to one embodiment, the average width of each longitudinal section of a laser processing track is determined, for example by measuring the width of the laser processing track in the longitudinal section in equidistant steps and calculating the arithmetic mean from the measured values. According to one embodiment, longitudinal sections of the same length are considered for the calculation of the average width. For example, according to one embodiment, each track is broken down into longitudinal sections of the same length and the average width of the laser processing track in the longitudinal section is determined for each longitudinal section.

According to one embodiment, the average width of at least a part (for example at least 50%) of the longitudinal sections (for example of a part of the longitudinal sections or of all longitudinal sections) defines a width variation which is smaller than 10 μm and/or which is smaller than 50% of one Average of the mean widths of the longitudinal sections that define the width variation. In other words, according to one embodiment, the width variation (which was determined based on at least a portion (for example at least 50%) of the longitudinal sections within the module area) is less than 10 μm. For example, according to one embodiment, the width variation of at least a part of the longitudinal sections of laser processing tracks of the first type is less than 10 μm. According to a further embodiment (for example alternatively or additionally), the width variation of at least a part of the longitudinal sections of laser processing tracks of the second type is less than 10 μm. According to a further embodiment (second alternative stated above), the width variation is less than 50% of an average of the average widths of the longitudinal sections that define the width variation. In other words, the mean value is formed from the average widths of the longitudinal sections that define the width variation (i.e. which are used to determine the width variation).

According to another embodiment, the width variation as defined in embodiments of the subjects disclosed herein is less than 5 µm, for example less than 3 µm or even less than 2 µm.

According to another embodiment, the width variation as defined in embodiments of the subjects disclosed herein is less than 30% of an average of the average widths of the longitudinal sections that define the width variation, for example less than 20%, less than 10%, less than 5 %, less than 3% or even less than 1%. According to a further embodiment, the percentage is in an interval between 0.1% and 50%, for example in an interval between 1% and 30%.

According to one embodiment, a proportion of “at least a part of the longitudinal sections” comprises a proportion of the longitudinal sections of at least 50%, for example at least 60%, at least 70%, at least 80% or at least 90%. According to one embodiment, the proportion is 100%. In the above example, this means, for example, that the width variation of all of the relevant longitudinal sections (for example the width variation of all of the longitudinal sections of laser processing tracks of the first type) is less than 10 μm.

According to one embodiment, the statement “at least a portion of the plurality of groups” includes at least 50% of the plurality of groups, for example at least 60%, at least 70%, at least 80% or at least 90%. According to one embodiment, the proportion of groups is 100% (i.e. the specified size applies to all groups of the plurality of groups of the solar module.

According to one embodiment, the statement “at least part of the plurality of laser processing tracks” includes at least 50% of the plurality of laser processing tracks, for example at least 60%, at least 70%, at least 80% or at least 90%. According to one embodiment, the proportion of laser processing tracks is 100% (i.e. the specified size applies to all laser processing tracks of the plurality of groups of the solar module).

According to one embodiment, the laser processing tracks (of the solar module) were generated by laser radiation. According to a further embodiment, the width variation of less than 10 μm and/or the width variation is less than 50% of an average of the average widths of the longitudinal sections that define the width variation was achieved by at least one of the following: (i) monitoring a performance of the laser radiation; (ii) controlling the power of the laser radiation; (iii) determining a focus position of the laser radiation along a propagation direction of the laser radiation; (iv) Controlling the focus position of the laser radiation along the direction of propagation.

According to one embodiment, the length of the longitudinal section is in an interval between 200 μm and 10 mm, for example between 1 mm and 5 mm. For example, according to one embodiment, the length of the longitudinal section (i.e. the length over which the width of the laser processing track in question is averaged) is selected such that, for example, variations in the width of the laser processing track, which result, for example, from a pulse overlap of laser pulses, are averaged and thereby for the further consideration can be eliminated.

According to one embodiment, each of the laser processing tracks has a plurality of overlapping processing spots, each processing spot being generated by processing the solar module with a laser spot. For example, according to one embodiment, the length of the longitudinal section is at least equal to the simple diameter of a processing spot.

According to one embodiment, the overlapping processing spots form a periodic contour of an edge which forms laser processing tracks with a period length, and wherein the length of the longitudinal section is greater than the period length. For example, according to one embodiment, the length of the longitudinal section is greater than twice the period length or greater than three times the period length.

According to one embodiment, for each laser processing track, the longitudinal sections of the relevant laser processing track define a smallest average width and a largest average width of the relevant processing track within the module area. After, according to one embodiment, the width of the relevant laser processing track is averaged over the longitudinal sections, in this embodiment the smallest average width and the largest average width are each averaged values, averaged over the relevant longitudinal section.

According to one embodiment, the width variation as defined and used herein includes a single width variation or two or more different width variations. In other words, the solar module (or method) realizes a single width variation as described herein or the solar module (or method) realizes two or more width variations as described herein. Each width variation can be defined according to one or more of the embodiments described herein.

According to one embodiment, the width variation comprises a first width variation, the first width variation for each laser processing processing track is equal to a difference between the largest average width and the smallest average width of the same laser processing track. According to a further embodiment, the first width variation of at least a portion of the laser processing tracks of the first type (for example of at least 50% of the laser processing tracks of the first type) is smaller than 10 μm. According to a further embodiment, the first width variation of at least a portion of the laser processing tracks of the first type (for example of at least 50% of the laser processing tracks of the first type) is smaller than 50% of an average value of the mean widths of the longitudinal sections that define the first width variation.

According to one embodiment, the width variation comprises a second width variation, wherein the second width variation for each laser processing track is equal to a standard deviation of the average width of the longitudinal sections of the relevant laser processing track in the module area. According to a further embodiment, the second width variation of at least a part of the laser processing tracks of the first type (for example of at least 50% of the laser processing tracks of the first type) is smaller than 10 μm.

According to one embodiment, the second width variation of at least a portion of the laser processing tracks of the first type (for example of at least 50% of the laser processing tracks of the first type) is less than 50% of an average of the average widths of the longitudinal sections that define the second width variation.

According to a further embodiment, the first width variation of at least a part (for example at least 50%) of the laser processing tracks of the second type is smaller than 10 μm and / or the width variation of at least a part of the laser processing tracks of the second type is smaller than 50% of an average value of the average Widths of the longitudinal sections that define the first width variation (for the relevant portion of the second type of laser processing tracks).

According to one embodiment, the first width variation is less than 10 μm of at least a portion (for example, at least 50%) of the laser processing tracks of the second type (for example, at least 50% of the laser processing tracks of the second type). According to a further embodiment, the first width variation of at least a portion of the laser processing tracks of the second type (for example of at least 50% of the laser processing tracks of the second type) is less than 50% of an average value of the mean widths of the longitudinal sections that define the width variation.

According to one embodiment, the second width variation of at least a portion of the laser processing tracks of the second type (for example of at least 50% of the laser processing tracks of the second type) is smaller than 10 μm. According to a further embodiment, the second width variation of at least a portion of the laser processing tracks of the second type (for example of at least 50% of the laser processing tracks of the second type) is smaller than 50% of an average value of the mean widths of the longitudinal sections that define the width variation.

According to a further embodiment, the longitudinal sections of at least a portion of the first type laser processing tracks (for example, at least 50% of the first type laser processing tracks) located within the module area define a smallest average width and a largest average width in the module area. According to a further embodiment, the width variation includes a third width variation and the third width variation is equal to a difference between the largest average width and the smallest average width. According to one embodiment, the third width variation is smaller than 10 μm and/or the third width variation is smaller than 50% of an average of the average widths of the longitudinal sections that define the third width variation.

According to a further embodiment, the width variation comprises a fourth width variation, wherein the fourth width variation is equal to a standard deviation of the average width of the longitudinal sections of at least a part of the laser processing tracks of the first type (for example of at least 50% of the laser processing tracks of the first type). According to a further embodiment, the fourth width variation is smaller than 10 μm. According to a further embodiment, the fourth width variation is less than 50% of an average of the average widths of the longitudinal sections that define the fourth width variation.

According to one embodiment, each of the laser processing tracks for the module area has an average width that is smaller than 300 μm, for example smaller than 200 μm, smaller than 100 μm, smaller than 50 μm, smaller than 20 μm, smaller than 10 μm, smaller than 5 µm or smaller than 2 µm. According to one embodiment, each of the laser processing tracks has an average width that lies in a range between 1 μm and 300 μm. According to one embodiment, the average width for the module area is determined as the mean value

According to one embodiment, for each group, the laser processing track of the first type and the laser processing track of the second type of the group in question have a center distance from one another which varies within the module range and which defines a distance variation for the group in question. The center distance here is generally the distance between the centers (ie at half width) of the laser processing tracks in question, for example a center of the laser processing track of the first type and a center of the laser processing track of the second type.

According to one embodiment, the distance variation is less than 15 μm for at least a portion of the plurality of groups. According to a further embodiment, the distance variation is less than 10 μm or less than 5 μm for at least some of the plurality of groups.

According to one embodiment, the first type laser processing tracks of two of the groups have a center distance from each other that varies within the module range and defines a group distance variation. According to a further embodiment, for at least a part of the plurality of groups, the group distance variation between the laser processing tracks of the first type of adjacent groups is less than 15 μm. According to a further embodiment, for at least a portion of the plurality of groups, the group spacing variation between the laser processing tracks of the first type of adjacent groups is less than 5% of an average of the center distances that define the group spacing variation (i.e., in this embodiment, the center distances between laser processing tracks of the first type of two neighboring groups).

According to one embodiment, for at least a portion of the plurality of groups, the distance variation is less than 90% of an average of the center distances that define the distance variation. According to a further embodiment, for at least a portion of the plurality of groups, the distance variation is less than 70% (for example less than 50% or less than 30%) of an average value of the center distances that define the distance variation. According to a further embodiment, for at least a portion of the plurality of groups, the distance variation is less than 20% (for example less than 10% or less than 5%) of an average of the center distances that define the distance variation. For example, according to one embodiment, for at least a portion of the plurality of groups, the distance variation is less than 1% of an average of the center distances that define the distance variation.

According to one embodiment, the indication of the distance variation “for at least a part of the plurality of groups” includes the distance variation (for example less than 15 μm) for at least 50% of the plurality of groups, for example at least 60%, at least 70%, at least 80% or at least 90%. According to one embodiment, the proportion of groups to which the specified distance variation applies is 100% (i.e. the specified distance variation applies to all groups of the plurality of groups of the solar module.

According to one embodiment, for each group of the plurality of groups, the center distance for the module area defines a smallest distance and a largest distance, and the distance variation of the relevant group is equal to the difference between the largest distance and the smallest distance.

According to a further embodiment, for each group the distance variation of the relevant group is equal to the standard deviation of the center distance in the module area.

According to a further embodiment, among all groups (the plurality of groups), the largest center distance between the laser processing track of the first type and the laser processing track of the second type (the same group) is smaller than 200 μm, for example smaller than 100 μm, for example smaller than 50 μm, for example smaller than 20 µm, for example smaller than 10 µm, for example smaller than 3 µm.

According to one embodiment, for all groups of the plurality of groups, the distance variation is less than 15 μm and/or for all groups of the plurality of groups, the distance variation is less than 90% of an average value of the center distances that define the distance variation.

As explained above, according to one embodiment, in addition to or instead of the (maximum) width variation, which is defined by the difference of the largest width and the smallest width of a laser processing track in the module area, a (statistical) width variation, which is defined, can also be used by the standard deviation of the width of the laser processing track in the module area.

Analogously, according to one embodiment, in addition to or instead of the (maximum) distance variation, which is defined for a (each) group by the difference of the largest distance and the smallest distance of the laser processing track of the first type and the laser processing track of the second type in the module area, also a (statistical) distance variation can be used, which is defined by the standard deviation of the distance of the first type laser processing track and the second type laser processing track of the group in the module area.

According to one embodiment, a surface of the solar module has its first location and a second location, wherein a surface portion of the surface, which is arranged between the first location and the second location, has a maximum distance from an imaginary straight line through the first location and the second location of more than 100 µm.

According to one embodiment, the first location and the second location are locations on an unprocessed surface portion of the solar module. For example, according to one embodiment, the first location and the second location are arranged between the laser processing track of the first type and the laser processing track of the second type. According to a further embodiment, the first location and the second location can be arranged in one of the laser processing tracks, for example in the first laser processing track or in the second laser processing track.

According to one embodiment, the first location and the second location each lie in a module area of one of the groups, the module area having a length that is at least 20 cm in a longitudinal direction. According to one embodiment, the module area is further formed in accordance with one or more of the embodiments disclosed herein.

According to one embodiment, the maximum distance of the surface section from the imaginary straight line is greater than 500 μm, for example greater than 2 mm, greater than 5 mm or greater than 10 mm.

According to one embodiment, the solar module has a carrier substrate and a layer system on the carrier substrate, wherein the layer system has a plurality of layers. According to a further embodiment, each of the laser processing tracks is formed by removing layer material from at least one layer of the plurality of layers.

• das Trägersubstrat besteht aus Glas, beispielsweise aus Flachglas;
• das Trägersubstrat weist eine Dicke auf, die in dem Bereich zwischen 1 mm und 4 mm liegt;
• das Schichtsystem weist elektrisch leitende Schichten und fotoelektrisch aktive Schichten auf;
• das Schichtsystem weist eine Dicke auf, die in einem Bereich zwischen 100 nm und 100 µm liegt.

According to one embodiment, the solar module has at least one of the following features:

• the carrier substrate consists of glass, for example flat glass;
• the carrier substrate has a thickness that is in the range between 1 mm and 4 mm;
• the layer system has electrically conductive layers and photoelectrically active layers;
• the layer system has a thickness that lies in a range between 100 nm and 100 μm.

According to a further embodiment, each laser processing track of the plurality of laser processing tracks is one of the following: (i) a material recess in at least one layer of the layer system; (ii) a material recess in at least one layer of the layer system, which is filled with a material from one of the other layers. In other words, each laser processing track is a material recess in at least one layer of the layer system, wherein the material recess can be filled with the material of another layer.

At this point it is emphasized that the solar module can also have other (not described) laser processing marks in addition to the laser processing marks described herein. In this respect, the expression “each laser processing track” refers to each of the laser processing tracks described herein, but not to any additional laser processing tracks of the solar module that may be present but not described here.

According to one embodiment, the substrate is free of the layer system in an edge region. According to one embodiment, the edge region can have a distance from an edge of the substrate, the distance being in a range between 0 mm and 20 mm. For example, the substrate can be free of the layer system up to the edge of the substrate (corresponding to a distance from the edge of 0 mm). Removing the layer system in the edge area (which exposes the carrier substrate in the edge area) is also referred to as “decoating”. According to one embodiment, the distance of the edge region from the edge of the substrate is in a range between 1 mm and 20 mm, for example between 1 mm and 15 mm.

According to one embodiment, the width of the edge region is between 1 mm and 20 mm, for example between 2 mm and 10 mm. According to one embodiment, the width of the edge region is 3 mm.

According to one embodiment, the solar module has a dimension that is greater than 0.2 m. According to one embodiment, the solar module has a dimension that is smaller than 3 m. For example, in one embodiment the solar module has a dimension that is in a range between 0.2 m and 3 m. According to one In another embodiment, the solar module has a dimension that is greater than 0.3 m. According to yet another embodiment, the solar module has a dimension that is greater than 0.5 m. According to one embodiment, the solar module has a dimension that is greater than 0.8 m. According to a further embodiment, the solar module has a dimension that is smaller than 2 m. According to one embodiment, the dimension of the solar module is its length of the solar module.

Generally herein, the statement that a quantity lies in a range having a lower limit and an upper limit merely indicates that the quantity lies within that interval and does not in itself indicate to what fluctuations the quantity is subject.

According to a further embodiment, the module area has a length of at least 0.5 m. According to one embodiment, the module area extends over the entire extent of the laser processing tracks (in the longitudinal direction) or over the entire extent of the solar module (in the longitudinal direction).

According to one embodiment, the laser processing tracks are linear.

According to one embodiment, each group of laser processing tracks extends over a width, the width (also referred to herein as group width) being less than 200 μm. According to one embodiment, the group width is in a range between 10 μm and 1 mm. For example, the group width is in a range between 10 µm and 200 µm, for example in a range between 20 µm and 150 µm or in a range between 25 µm and 100 µm. According to one embodiment, the group width is less than 150 μm, for example less than or equal to 100 μm.

According to one embodiment, the groups of laser processing tracks are at a distance from one another, the distance being in a range between 4 mm and 20 mm. According to one embodiment, the distance between the groups of laser processing tracks defines a dimension of a solar cell of the solar module. Consequently, according to one embodiment, the solar module has a solar cell with a dimension that lies in a range between 4 mm and 20 mm. According to one embodiment, the dimension of the solar cell is a width of the solar cell.

According to one embodiment, at least some of the laser processing tracks (for example each of the laser processing tracks) have a projection on their edge relative to an unprocessed surface of the solar module. According to one embodiment, the projection for the relevant laser processing tracks (for example for each of the laser processing tracks) varies in height within the module area with respect to the unprocessed surface. According to a further embodiment, among all laser processing tracks, a maximum height of the projection in the module area is less than 2 μm, for example less than 1 μm or less than 500 nm. According to one embodiment, a maximum height of the projection in the module area is less than 200 nm, for example smaller than 100 nm.

According to an embodiment of the second aspect, a method of manufacturing a solar module as described herein (i.e., a solar module according to one or more embodiments of the subjects disclosed herein) includes generating the plurality of groups of laser processing tracks using laser radiation.

According to one embodiment, the width variation less than 10 μm and/or the width variation less than 50% of an average of the average widths of the longitudinal sections that define the width variation is caused by at least one of the following: (i) monitoring a power of the laser radiation; (ii) controlling the power of the laser radiation; (iii) determining a focus position of the laser radiation along a propagation direction of the laser radiation; (iv) Controlling the focus position of the laser radiation along the direction of propagation.

According to one embodiment, the distance variation of less than 15 μm and/or the distance variation that is, for at least a portion of the plurality of groups, less than 90% of an average of the center distances defining the distance variation is caused by at least one of the following: ( i) monitoring a power of the laser radiation; (ii) controlling the power of the laser radiation; (iii) determining a focus position of the laser radiation along a propagation direction of the laser radiation; (iv) Controlling the focus position of the laser radiation along the direction of propagation.

According to one embodiment, the laser processing track of the first type and the laser processing track of the second type of a group are generated one after the other in time. For example, according to one embodiment, the solar module is processed between the generation of the laser processing track of the first type and the generation of the laser processing track of the second type of a group, for example provided with a layer of the layer system. According to a wide In this embodiment, a position of an already existing track section of the laser processing track of the first type is determined and, based on the determined position of the already existing track section, a relative position of a track section of the laser processing track of the second type to be created is determined.

According to one embodiment, the generation of a laser processing track (for example the laser processing track of the first type and/or the laser processing track of the second type) occurs at a speed that is in a range between 0.5 m/s to 8 m/s. According to a further embodiment, the speed is in a range between 1 m/s and 5 m/s. For example, the speed of creating a laser processing track (also called scribing speed) is 2.5 m/s.

According to one embodiment, the generation of a laser processing track (for example the laser processing track of the first type and/or the laser processing track of the second type) takes place with a laser wavelength in a range between 300 nm to 1090 nm.

For example, the laser wavelength is 355 nm, 515 nm, 532 nm, 1030 nm, 1064 nm, 1070 nm or 1090 nm.

• Ermitteln der Relativposition mit einer Ermittlungsrate größer 10 Hz (Hz) (Gemäß einer Ausführungsform ist die Ermittlungsrate größer als 100 Hz, beispielsweise größer oder größer als 1000 Hz; die Ermittlungsrate liegt gemäß einer Ausführungsform in einem Bereich zwischen 10 Hz und 2000 Hz, beispielsweise bei 200 Hz);
• Ermitteln der Relativposition mit einer Schrittweite von höchstens 50 mm (gemäß einer Ausführungsform beträgt die Schrittweite höchstens 20 mm, beispielsweise höchstens 5 mm)
• Ermitteln der Position des bereits bestehenden Spurabschnitts der Laserbearbeitungsspur des ersten Typs während der Erzeugung der Laserbearbeitungsspur des zweiten Typs, insbesondere wobei das Ermitteln der Position des bereits bestehenden Spurabschnitts in einem Abstand von höchstens 20 cm (beispielsweise höchstens 5 cm, höchstens 1 cm, höchstens 5 mm oder höchstens 1 mm) von einer Bearbeitungsstelle, welche durch die Relativposition definiert ist, erfolgt, wobei an der Bearbeitungsstelle während des Ermittelns der Position des bereits bestehenden Spurabschnitts der zu erstellende Spurabschnitt der Laserbearbeitungsspur des zweiten Typs erzeugt wird (mit anderen Worten beträgt der Abstand zwischen einer Stelle der Positionsermittlung und einer Stelle, die mit einer daran angepassten Laserleistung bearbeitet wird höchstens 20 cm (beispielsweise höchstens 5 cm, höchstens 1 cm, höchstens 5 mm oder höchstens 1 mm);
• Positionieren der Laserstrahlung in die Relativposition wobei das Ermitteln der Relativposition und das entsprechende Positionieren der Laserstrahlung in die Relativposition mit der hierin beschriebenen Zykluszeit erfolgt (beispielsweise mit einer Zykluszeit von weniger als 100 ms) erfolgt.

According to one embodiment, the method comprises at least one of the following:

• Determining the relative position with a determination rate greater than 10 Hz (Hz) (According to one embodiment, the determination rate is greater than 100 Hz, for example greater or greater than 1000 Hz; according to one embodiment, the determination rate is in a range between 10 Hz and 2000 Hz, for example 200Hz);
• Determining the relative position with a step size of at most 50 mm (according to one embodiment, the step size is at most 20 mm, for example at most 5 mm)
• Determining the position of the already existing track section of the laser processing track of the first type during the generation of the laser processing track of the second type, in particular wherein determining the position of the already existing track section at a distance of at most 20 cm (for example at most 5 cm, at most 1 cm, at most 5 mm or at most 1 mm) from a processing point which is defined by the relative position, the track section of the laser processing track of the second type to be created being generated at the processing point while the position of the already existing track section is being determined (in other words, the distance is between a point of position determination and a point that is processed with a laser power adapted to it, a maximum of 20 cm (for example a maximum of 5 cm, a maximum of 1 cm, a maximum of 5 mm or a maximum of 1 mm);
• Positioning the laser radiation into the relative position, wherein the determination of the relative position and the corresponding positioning of the laser radiation into the relative position takes place with the cycle time described herein (for example with a cycle time of less than 100 ms).

1. (a) Überwachen einer Leistung der Laserstrahlung;
2. (b) Regeln der Leistung der Laserstrahlung;
3. (c) Bestimmen einer Fokuslage der Laserstrahlung längs einer Ausbreitungsrichtung der Laserstrahlung;
4. (d) Regeln der Fokuslage der Laserstrahlung längs der Ausbreitungsrichtung;
5. (e) Verwendung einer Tiefenschärfe der Laserstrahlung von mehr als 20 µm, beispielsweise mehr als 100 µm (gemäß einer Ausführungsform liegt die Tiefenschärfe der Laserstrahlung in einem Bereich zwischen 20 µm und 1000 µm);
6. (f) Erfassung eines Abstands zwischen einer Maschinenkomponente, welche die Laserstrahlung abgibt, und dem Solarmodul;
7. (g) Erfassung eines Abstands zwischen einer Maschinenkomponente, welche die Laserstrahlung abgibt, und dem Solarmodul mit einer Erfassungsrate von mehr als 10 Hz, beispielsweise mehr als 50 Hz, mehr als 200 Hz, mehr als 1000 Hz oder mehr als 2000 Hz (gemäß einer Ausführungsform liegt die Erfassungsrate einem Intervall zwischen 10 Hz und 2500 Hz);
8. (h) Regelung eines Abstands zwischen einer Maschinenkomponente, welche die Laserstrahlung abgibt, und dem Solarmodul;
9. (i) Regelung eines Abstands zwischen einer Maschinenkomponente, welche die Laserstrahlung abgibt, und dem Solarmodul mit einer Zykluszeit von kleiner als 100 ms, beispielsweise kleiner als 50 ms, kleiner als 10 ms, kleiner als 5 ms, kleiner als 2 ms oder kleiner als 0,5 ms (gemäß einer Ausführungsform liegt die Zykluszeit in einem Bereich zwischen 0,1 ms und 100 ms), beispielsweise 5 ms;
10. (j) räumliches Positionieren des Solarmoduls in eine mechanisch definierte Zwangslage.

According to one embodiment, the method further comprises at least one of the following:

1. (a) monitoring a power of the laser radiation;
2. (b) controlling the power of the laser radiation;
3. (c) determining a focus position of the laser radiation along a propagation direction of the laser radiation;
4. (d) regulating the focus position of the laser radiation along the direction of propagation;
5. (e) using a depth of field of the laser radiation of more than 20 µm, for example more than 100 µm (according to one embodiment, the depth of field of the laser radiation is in a range between 20 µm and 1000 µm);
6. (f) detecting a distance between a machine component that emits the laser radiation and the solar module;
7. (g) detecting a distance between a machine component that emits the laser radiation and the solar module with a detection rate of more than 10 Hz, for example more than 50 Hz, more than 200 Hz, more than 1000 Hz or more than 2000 Hz (according to a Embodiment, the acquisition rate is an interval between 10 Hz and 2500 Hz);
8. (h) controlling a distance between a machine component that emits the laser radiation and the solar module;
9. (i) Control of a distance between a machine component that emits the laser radiation and the solar module with a cycle time of less than 100 ms, for example less than 50 ms, less than 10 ms, less than 5 ms, less than 2 ms or less than 0.5 ms (according to one embodiment, the cycle time is in a range between 0.1 ms and 100 ms), for example 5 ms;
10. (j) spatial positioning of the solar module in a mechanically defined constraint.

According to one embodiment, to carry out a method disclosed herein and to produce a solar module disclosed herein, a laser processing device can be used and operated in a manner as described in the German patent application with the official file number DE 10 2022 109 318.2 is described. This German patent application with the official file number DE 10 2022 109 318.2 is hereby incorporated by reference in its entirety.

Even if for only a portion of the groups or laser processing tracks the distance variation and/or the width variation are maintained in the ranges described herein according to the disclosed embodiments, this may be sufficient for error-free groups of laser processing tracks (e.g. groups with non-overlapping laser processing tracks). Embodiments of the subjects disclosed herein therefore allow the efficient production of highly efficient solar modules whose groups of laser processing tracks only occupy a very small portion of the surface of the solar module.

According to embodiments of the first aspect, the solar module is configured to provide the functionality of one or more of the embodiments disclosed herein and/or to provide the functionality as required for one or more of the embodiments disclosed herein, in particular the embodiments of the first aspect or the second aspect.

According to embodiments of the second aspect, the method is configured to provide the functionality of one or more of the embodiments disclosed herein and/or to provide the functionality as required for one or more of the embodiments disclosed herein, in particular the embodiments of the first aspect or the second aspect.

Unless otherwise stated, numerical values are to be understood as including a ±5% window, i.e. H. For example, according to one embodiment, a specification of 100 µm includes a specification within an interval of (100 µm ± 5%) = [0.95 µm; 105 µm] and a percentage of 50% includes, according to one embodiment, a percentage within an interval of 50% ± 5% = [47.5%; 52.5%]. According to a further embodiment, numerical values are to be understood as including a ±10% window.

Exemplary embodiments of the subject matter disclosed herein are described below, with reference being made, for example, to a solar module and method. It should be emphasized that, of course, any combination of features of various aspects, embodiments and examples is possible. In particular, some embodiments are described with reference to a method, while other embodiments are described with reference to a solar module. However, one skilled in the art will appreciate from the foregoing and subsequent description, claims and drawings that, unless otherwise indicated, features of various aspects, embodiments and examples can be combined and such combinations of features are to be considered disclosed by this application. For example, even a feature that relates to a method can be combined with a feature that relates to a device, and vice versa.

According to one embodiment, a method disclosed herein may define the functionality of a solar module manufactured using the method disclosed herein, without being limited to the device-specific features. In this respect, each solar module disclosed herein is intended to implicitly disclose a corresponding method that is defined exclusively by the disclosed functionality. Conversely, any method disclosed herein may implicitly disclose a corresponding solar module that is a result of performing the method.

Further advantages and features of the present disclosure emerge from the following exemplary description of currently preferred embodiments, to which, however, the claimed invention is not limited. The individual figures in the drawings of this document are to be viewed only as schematic and not to scale.

BRIEF DESCRIPTION OF THE DRAWINGS

• 1 shows a solar module according to embodiments of the subject matter disclosed herein.
• 2 schematically shows a detailed view of a laser processing track according to embodiments of the subjects disclosed herein.
• 3 schematically shows a solar module according to embodiments of the subjects disclosed herein.
• 4 shows a gradient of the surface of the solar module 3 along line IV-IV in 3 .

DETAILED DESCRIPTION

It is noted that in various figures, similar or identical elements or components are provided with the same reference numerals, or with reference numerals that differ only in the first digit or an appended letter. Such features or components that are the same or at least functionally identical to the corresponding features or components in another figure are only described in detail when they first appear in the following text and the description is repeated when these features and components (or the corresponding reference numbers) are not repeated.

It is understood that an exemplary implementation of the elements described and referenced below are shown in the relevant drawings and configured in accordance with the description below unless otherwise indicated.

1 shows a solar module 100 according to embodiments of the subject matter disclosed herein.

According to one embodiment, the solar module 100 has a plurality of groups of laser processing tracks 102, each group 103 having a laser processing track 102 of a first type 104 and a laser processing track of a second type 106 (in 1 a single group 103 is shown). According to a further embodiment, the solar module has a module area 108 on its boundaries 1 are indicated schematically at 110 and which has a length 112 of at least 20 cm. As already explained herein, the module area is not a physical feature of the solar module but merely an area that is subject to closer inspection in the sense of the subjects disclosed herein (for example, the determination of a width variation, a distance variation (within a group) or a group distance variation (ie a distance variation among different groups). According to one embodiment, the module area can be positioned anywhere on the solar module. According to one embodiment, the longitudinal direction is the average direction of the laser processing tracks of the plurality of groups in the module area.

According to one embodiment, each of the laser processing tracks 102 has a width 113 that varies along the respective laser processing track 102, for example as in 1 shown. According to a further embodiment, the width 113 of a laser processing track 102 within longitudinal sections of the relevant laser processing track 102 defines an average width of each longitudinal section (in 1 not shown), wherein the average width of at least a portion of the longitudinal sections (for example of at least 50% of the longitudinal sections) within the module area 108 defines a width variation.

According to one embodiment, for each laser processing track 102, the longitudinal sections of the relevant laser processing track 102 within the module area 108 have a smallest average width 114 and a largest average width 116 of the relevant laser processing track 102. As stated above and as hereinafter referred to 2 and 3 As will be explained in more detail, the term “average width” refers to a width of the laser processing track that is averaged over the relevant longitudinal section.

According to one embodiment, the width variation for each laser processing track 102 is equal to a difference between the largest average width 116 and the smallest average width 114 of the same laser processing track 102. Such a width variation is also referred to herein as a first width variation. According to one embodiment, the (first) width variation of at least a part of the laser processing tracks (for example of at least 50% of the laser processing tracks) of the first type is smaller than 10 μm and/or the (first) width variation is smaller than 50% of the mean value of the average width of those Longitudinal sections that define the width variation.

Furthermore, according to a further embodiment, the width variation is given by the standard deviation of the average width of the longitudinal sections of the relevant laser processing track in the module area 108. This width variation is also referred to herein as the second width variation.

According to one embodiment, the width variation may include the first width variation and the second width variation, i.e. H. According to one embodiment, the solar module 100 or its laser processing tracks has both the first width variation and the second width variation in the disclosed value ranges.

According to a further embodiment, for each group, the laser processing track 102 of the first type 104 and the laser processing track 102 of the second type 106 of the relevant group 103 have a center distance 118 from one another, which varies within the module area 108 and a distance variation is defined for the relevant group 103.

According to one embodiment, the distance variation is defined by a difference between a largest (center) distance 120 and a smallest (center) distance 122.

According to a further embodiment, the distance variation of the relevant group 103 is equal to the standard deviation of the center distance 118 in the module area 108.

As explained with reference to the width variation, the distance variation can also include several “distance variations” (which can be referred to, for example, as the first distance variation for the difference formation and as the second distance variation for the standard deviation), each of which is realized by the laser processing tracks 102 in the disclosed value ranges .

2 shows schematically a detailed view of a laser processing track 102 (for example the laser processing track 102 of the first type 104 of 1 ) according to embodiments of the subject matter disclosed herein.

According to one embodiment, each of the processing tracks 102 has a plurality of overlapping processing spots, of which in 2 some are indicated at 124. The shape of the processing spots reflects the shape of the laser spot used to produce the laser processing track. For example, the processing spots 124 can be circular or approximately circular, for example as in 2 shown. By partially overlapping the processing spots 124, for example as in 2 shown, the overlapping processing spots 124 form a curvilinear contour 126, which is in 2 is shown by a thicker line. With constant pulse overlap, a periodic contour with a period length results.

As already with reference to 1 mentioned, according to one embodiment, the width of the laser processing track 102 is averaged over a longitudinal section 128 and an average width is thereby defined or determined for each longitudinal section 128. If the length of the longitudinal section 128 is suitably dimensioned, a width variation that arises from the curvilinear contour due to overlapping processing spots 124 is eliminated. For example, the length 129 of the longitudinal section can be equal to a diameter of the processing spots 124, or an integer multiple thereof.

3 schematically shows a solar module 200 according to embodiments of the subject matter disclosed herein.

3 shows two groups of laser processing tracks, a first group 103 and a second group 203. According to one embodiment, each of the groups has at least two laser processing tracks 102, for example three laser processing tracks 102, for example as in 3 shown. Each group has a laser processing track 102 of a first type 104, a laser processing track of a second type 106 and a laser processing track of a third type 130, for example as in 3 shown.

According to one embodiment, the longitudinal sections of at least a part (for example of at least 50%) of the laser processing tracks 102 of the first type 104, for example, among others, the laser processing tracks 102 of the first type 104 of the first group 103 and the second group 203 define a smallest average width 132 and a largest average width 134 among the relevant proportion of laser processing tracks of the first type 104 (for example among all laser processing tracks of the first type 104). To determine the smallest average width 132 and the largest average width 134, the average widths of all longitudinal sections 128 of the relevant laser processing tracks of the first type 104 are used and not, in contrast to the embodiments with reference to 1 was described, only the longitudinal sections 128 of a single laser processing track 102. Of the longitudinal sections 128 are in 3 some marked at 128. According to one embodiment, the width variation (also referred to herein as the third width variation) is equal to a difference between the largest average width 134 and the smallest average width 132.

Furthermore, according to a further embodiment, the width variation is given by the standard deviation of the average width of the longitudinal sections 128 of at least a part (for example at least 50%) of the laser processing tracks 102 of the first type 104 in the module area 108. This width variation is also referred to herein as the fourth width variation.

According to one embodiment, the third width variation and/or fourth width variation also lies within the value ranges disclosed herein.

According to one embodiment, the laser processing tracks 102 of the first type 104 of two of the groups 103, 203 have a center distance 136 from each other that varies within the module area 108 and a group distance variation tion defined, ie a distance variation of laser processing tracks 102 of different groups. According to one embodiment, the laser processing tracks 102 that define the group spacing variation are groups of different types. According to a further embodiment, the laser processing tracks 102 that define the group spacing variation are of the same type, for example of the first type 104. According to one embodiment, the two groups that define the group spacing variation are adjacent groups, ie, nearest neighbors. According to a further embodiment, the two groups that define the group distance variation are next-nearest neighbors or even more distant neighbors.

According to one embodiment, for at least a part of the plurality of groups, the group distance variation between the laser processing tracks of the first type of adjacent groups is less than 15 μm.

According to a further embodiment, for at least some of the groups, the group distance variation between the laser processing tracks of the first type of adjacent groups is less than 5% of an average value of the center distances that define the group distance variation.

Analogous to the distance variation between the first type laser processing track 104 and the second type laser processing track 106 in the same group as described with reference to 1 has been described, the group distance variation can also be determined as the difference between a largest center distance and a smallest center distance (for example the laser processing tracks of the first type of two adjacent groups), or as a standard deviation of the center distances (each in the module area 108).

According to one embodiment, a surface 201 of the solar module 200 has a first location 138 and a second location 140, for example as in 3 shown. According to one embodiment, the first location and the second location are in the module area 108 of one of the groups, for example group 203, for example as in 3 shown. According to one embodiment, the first location and the second location may lie in the module area 108 or its edge.

4 shows a course of the surface 201 of the solar module 200 3 along line IV-IV in 3 .

According to one embodiment, a surface section 142 of the surface, which is arranged between the first location 138 and the second location 140, has a maximum distance 146 from an imaginary straight line 144 through the first location 138 and the second location 140. According to one embodiment, the maximum distance 146 is more than 100 μm, for example more than 300 μm.

A reference to laser radiation can of course also be defined analogously with reference to a laser device which emits the laser radiation along a radiation path, and vice versa. In this respect, any reference herein to laser radiation analogously discloses a reference to a laser device and a radiation path of the laser radiation.

It is noted that the embodiments described herein represent only a limited selection of possible embodiments of the present disclosure. It is thus possible to combine the features of different embodiments with one another in a suitable manner, so that a person skilled in the art can view a large number of combinations of different embodiments as disclosed with the embodiments explicitly disclosed here. It should also be mentioned that terms such as “a” or “an” do not exclude a plural. Terms such as “containing” or “having” do not exclude further features or process steps. Thus, according to one embodiment, the term “comprising” or “containing” means “including, among other things.” According to a further embodiment, the term “comprising” or “containing” means “consisting of”. According to one embodiment, the term “set up for” includes, among other things, the meaning “configured to”.

It should also be noted that reference characters in the claims should not be construed as limiting the scope of the claims. Furthermore, it should be noted that reference numerals in the description and reference of the description to the drawings should not be construed as limiting the scope of the description. Rather, the drawings illustrate only an exemplary implementation of a particular combination of multiple embodiments of the subject matter disclosed herein, and any other combination of embodiments is also possible and is deemed to be disclosed with this application.

QUOTES INCLUDED IN THE DESCRIPTION

This list of documents listed by the applicant was generated automatically and is included solely for the better information of the reader. The list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions.

Cited patent literature

• EP 1918994 A1 [0002]
• DE 102022109318 [0079]

Claims (13)

Solar module comprising: a plurality of groups of laser processing tracks, each group having a laser processing track of a first type and a laser processing track of a second type; wherein a surface of the solar module has a first location and a second location; wherein a surface portion of the surface, which is arranged between the first location and the second location, has a maximum distance of more than 100 μm from an imaginary straight line through the first location and the second location; in particular, the first location and the second location each lie in a module area of one of the groups and the module area has a length that is at least 20 cm in a longitudinal direction. Solar module after Claim 1 , wherein each of the laser processing tracks has a width that varies along the laser processing track; wherein for each of the laser processing tracks, the width within longitudinal sections of the relevant laser processing track defines an average width of each longitudinal section; wherein the average width of at least a portion of the longitudinal sections within the module area defines a width variation; and wherein the width variation is less than 10 µm; and/or the width variation is less than 50% of an average of the average widths of the longitudinal sections that define the width variation; in particular further comprising at least one of the following features (i) to (vi): (i) wherein for each laser processing track, the longitudinal sections of the relevant laser processing track define a smallest average width and a largest average width of the relevant laser processing track within the module area; wherein the width variation includes a first width variation and wherein the first width variation for each laser processing track is equal to a difference between the largest average width and the smallest average width of the same laser processing track; and wherein the first width variation of at least a portion, in particular of at least 50%, of the laser processing tracks of the first type is smaller than 10 μm and/or the first width variation is smaller than 50% of an average value of the average widths of the longitudinal sections that define the first width variation ; (ii) wherein the width variation comprises a second width variation and wherein the second width variation for each laser processing track is equal to a standard deviation of the average width of the longitudinal sections of the respective laser processing track in the module area; wherein the second width variation of at least a part, in particular of at least 50%, of the laser processing tracks of the first type is smaller than 10 µm and/or the second width variation is smaller than 50% of an average value of the mean widths of the longitudinal sections, which are the second width variation define; (iii) furthermore, of at least a portion, in particular of at least 50%, of the laser processing tracks of the second type, the first width variation is smaller than 10 μm and/or the width variation is smaller than 50% of an average value of the average widths of the longitudinal sections, which are the first define width variation; (iv) furthermore, of at least a part, in particular of at least 50%, of the laser processing tracks of the second type, the second width variation is smaller than 10 μm and / or the second width variation is smaller than 50% of an average value of the average widths of the longitudinal sections, which define second width variation; (v) wherein the longitudinal sections of at least a portion, in particular at least 50%, of the laser processing tracks of the first type located within the module area define a smallest average width and a largest average width in the module area; wherein the width variation includes a third width variation and wherein the third width variation is equal to a difference between the largest average width and the smallest average width; and wherein the third width variation is less than 10 μm and/or the third width variation is less than 50% of an average of the average widths of the longitudinal sections that define the third width variation; (vi) wherein the width variation comprises a fourth width variation and wherein the fourth width variation is equal to a standard deviation of the average width of the longitudinal sections of at least a part, in particular at least 50%, of the laser processing tracks of the first type; and wherein the fourth width variation is smaller than 10 μm and/or the fourth width variation is smaller than 50% of an average of the average widths of the longitudinal sections that define the fourth width variation. Solar module according to one of the Claims 1 or 2 , wherein for each group, the first type laser processing track and the second type laser processing track of the relevant group have a center distance from one another which varies within the module range and which defines a distance variation for the relevant group; wherein for at least some of the plurality of groups the distance variation is less than 15 µm and/or the distance variation is less than 90% of a value average of the center distances that define the distance variation; in particular further comprising one of the following features (i) to (iv): (i) for each group of the plurality of groups, the center distance for the module area defines a smallest distance and a largest distance and the distance variation of the group in question is equal to a difference between the largest distance and the smallest distance; (ii) for each group, the spacing variation of that group is equal to the standard deviation of the center distance of that group in the module region; (iii) among all groups of the plurality of groups, the largest center distance between the first type laser processing track and the second type laser processing track of the same group is less than 200 µm; (iv) for all groups of the plurality of groups, the distance variation is less than 15 µm and/or for all groups of the plurality of groups, the distance variation is less than 90% of an average of the center distances that define the distance variation. Solar module according to any of the Claims 1 until 3 , comprising a carrier substrate and a layer system on the carrier substrate; wherein the layer system has a plurality of layers; and wherein each of the laser processing tracks is formed by removing layer material from at least one layer of the plurality of layers. Solar module after Claim 4 , having at least one of the following features: the carrier substrate is made of glass; the carrier substrate has a thickness that is in the range between 1 mm and 4 mm; the layer system has electrically conductive layers and photoelectrically active layers; the layer system has a thickness that lies in a range between 100 nm and 100 μm. Solar module according to one of the Claims 4 or 5 , wherein each laser processing track is one of the following: a material recess in at least one layer of the layer system; a material recess in at least one layer of the layer system, which is filled with a material from one of the other layers. Solar module according to one of the Claims 4 until 6 , further comprising at least one of the following features: the substrate is free of the layer system in an edge region; the edge region of the substrate has a distance from an edge of the substrate, the distance being in a range between 0 mm and 20 mm; the edge region of the substrate has a width that lies in a range between 1 mm and 20 mm. Solar module according to any one of the preceding claims, further comprising at least one of the following features: the solar module has a dimension greater than 0.2 m; The solar module usually has a dimension that lies in a range between 0.2 m and 3 m. Solar module according to any one of the preceding claims, wherein the module area has a length of at least 0.5 m and / or extends over the entire extent of the laser processing tracks. Solar module according to any one of the preceding claims, wherein the laser processing tracks are linear. Solar module according to any one of the preceding claims, wherein each group of laser processing tracks extends over a width and wherein the width is less than 200 µm. Solar module according to any one of the preceding claims, wherein the groups of laser processing tracks are spaced apart from one another and the spacing is in a range between 4 mm and 20 mm. Solar module according to any one of the preceding claims, wherein at least part of the laser processing tracks has a projection on its edge with respect to an unprocessed surface of the solar module; wherein for each of the laser processing tracks the projection within the module area varies in height with respect to the unprocessed surface; whereby among all laser processing traces a maximum height of the projection is less than 2 µm.

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