CN117133821A - Solar energy module - Google Patents

Solar energy module Download PDF

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Publication number
CN117133821A
CN117133821A CN202311267158.0A CN202311267158A CN117133821A CN 117133821 A CN117133821 A CN 117133821A CN 202311267158 A CN202311267158 A CN 202311267158A CN 117133821 A CN117133821 A CN 117133821A
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China
Prior art keywords
laser
width
less
variation
distance
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CN202311267158.0A
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Chinese (zh)
Inventor
本杰明·博普
奥利弗·阿尔布里奇
阿纳斯·莫阿莱姆
阿明·克劳斯
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4JET Technologies GmbH
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4JET Technologies GmbH
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Publication of CN117133821A publication Critical patent/CN117133821A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H01L31/0463—PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/38—Conductors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/54—Glass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Sustainable Development (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Sustainable Energy (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
  • Laser Beam Processing (AREA)

Abstract

The present disclosure relates to a solar module having multiple sets of laser machined traces, wherein each set has a first type of laser machined trace and a second type of laser machined trace. The surface of the solar module has a first region and a second region, wherein a surface section distance of the surface arranged between the first region and the second region is greater than 100 μm; in particular wherein the first and the second location are each located in a module region of one of the groups and the module region has a length in the longitudinal direction of at least 20 cm.

Description

Solar energy module
Technical Field
The present invention relates to the field of solar modules.
Background
EP 1,918,994 A1 describes a thin-film solar module having a substrate and three thin layers deposited thereon, which are divided into structural units separated from one another by transition regions. Upon irradiation with light, a conversion of light energy into electrical energy takes place in the structural unit, while electrical interconnection and contact of the structural unit takes place by means of the transition region. For this purpose, the thin-film solar module has traces in the transition region, in which the material of the thin layer is removed and optionally replaced by another material, for example a material of the layer lying thereon or a conductor, for example silver. In the transition region, a plurality of traces are juxtaposed to one another in a particular order. The juxtaposed traces must not cross each other because otherwise an electrical short would occur which would render one or more of the structural units unusable. The substrate is heated and thus permanently deformed each time a thin layer is deposited. As a result of this deformation, the previously straight-running track is twisted. In order to be able to manufacture thin-film solar modules with improved efficiency, the trend of the existing track is determined before or during the introduction of the new track and, when the new track is introduced, the trend of the new track is adjusted relative to the trend of the existing track.
Disclosure of Invention
In view of the above, there may be a need for a technique for operating a solar module that provides improved characteristics and a method of manufacturing the same.
This need may be met by the independent claims. Some advantageous embodiments are specified in the dependent claims.
According to a first aspect of the herein disclosed subject matter, a solar module is provided.
According to one embodiment of the first aspect, there is provided a solar module having: a plurality of sets of laser machined traces, wherein each set has a first type of laser machined trace and a second type of laser machined trace; wherein the solar module has a module region extending in a longitudinal direction for a length of at least 20 cm; wherein each laser machining trace has a width that varies along the laser machining trace; wherein for each laser machined trace, the width within a longitudinal section of the associated laser machined trace defines an average width of each longitudinal section; wherein the average width of at least a portion of the longitudinal sections within the module region defines a width variation; and wherein the width variation is less than 10 μm and/or the width variation is less than 50% of the average value of the average width of the longitudinal sections defining the width variation.
According to a further embodiment of the first aspect, there is provided a solar module having: a plurality of sets of laser machined traces, wherein each set has a first type of laser machined trace and a second type of laser machined trace; wherein the solar module has a module region extending in a longitudinal direction for a length of at least 20 cm; wherein for each group, the laser-machined traces of the first type and the laser-machined traces of the second type of the relevant group have a center distance from each other that varies within the module area and that defines a distance variation for the relevant group; wherein for at least a portion of the plurality of sets the distance variation is less than 15 μm and/or the distance variation is less than 90% of an average value of the center distances defining the distance variation.
According to another embodiment of the first aspect, there is provided a solar module having: a plurality of sets of laser machined traces, wherein each set has a first type of laser machined trace and a second type of laser machined trace; wherein the solar module has a module region extending in a longitudinal direction for a length of at least 20 cm; wherein the two groups of first type laser machined traces have a center distance from each other that varies within the module area and defines a group distance variation; wherein for at least a portion of the plurality of groups, a group distance variation between the first type of laser-machined traces of adjacent groups is less than 15 μm; and/or for at least a portion of the plurality of groups, a group distance variation between the first type of laser processing traces of adjacent groups is less than 5% of an average of center distances defining the group distance variation.
According to another embodiment of the first aspect, there is provided a solar module having: a plurality of sets of laser machined traces, wherein each set has a first type of laser machined trace and a second type of laser machined trace; wherein the surface of the solar module is provided with a first part and a second part; wherein an imaginary straight line of the surface, the surface section distance of which is arranged between the first and second locations, passing through the first and second locations is greater than 100 μm; in particular wherein the first and the second portion are each located in a module region of one of the groups and the module region has a length in the longitudinal direction of at least 20 cm.
According to a second aspect of the herein disclosed subject matter, a method for manufacturing a solar module is provided.
According to an embodiment of the second aspect, there is provided a method for manufacturing a solar module according to the first aspect or at least one embodiment thereof, the method having: generating a plurality of sets of laser processing traces using laser radiation; causing a width variation of less than 10 μm and/or causing the width variation to be less than 50% of an average value of average widths of longitudinal sections defining the width variation by at least one of: (i) monitoring the power of the laser radiation; (ii) adjusting the power of the laser radiation; (iii) Determining a focal position of the laser radiation along a propagation direction of the laser radiation; (iv) The focal position of the laser radiation is adjusted along the propagation direction.
According to another embodiment of the second aspect, there is provided a method for manufacturing a solar module according to the first aspect or at least one embodiment thereof, the method having: generating a plurality of sets of laser processing traces using laser radiation; a distance change of less than 15 μm and/or a distance change of less than 90% of the average of the center distances for at least a portion of the plurality of sets is caused by at least one of: (i) monitoring the power of the laser radiation; (ii) adjusting the power of the laser radiation; (iii) Determining a focal position of the laser radiation along a propagation direction of the laser radiation; (iv) The focal position of the laser radiation is adjusted along the propagation direction.
According to another embodiment of the second aspect, there is provided a method for manufacturing a solar module according to the first aspect or at least one embodiment thereof, the method having: generating a plurality of sets of laser processing traces using laser radiation; also has at least one of the following:
(a) Monitoring the power of the laser radiation;
(b) Adjusting the laser radiation power;
(c) Determining a focal position of the laser radiation along a propagation direction of the laser radiation;
(d) Adjusting the focal position of the laser radiation along the propagation direction;
(e) Laser radiation having a depth of field greater than 20 μm, for example greater than 100 μm (according to one embodiment, the depth of field of the laser radiation is between 20 μm and 1000 μm) is used;
(f) Detecting a distance between a machine component outputting laser radiation and a solar module;
(g) Detecting a distance between the machine component outputting the laser radiation and the solar module at a detection frequency greater than 10Hz, such as greater than 50Hz, greater than 200Hz, greater than 1000Hz or greater than 2000Hz (according to one embodiment, the detection frequency is between 10Hz and 2500 Hz)
(h) Adjusting a distance between a machine component outputting laser radiation and a solar module;
(i) The distance between the machine component outputting the laser radiation and the solar module is adjusted with a cycle time of less than 100ms (according to one embodiment, the cycle time is in the range between 0.1ms and 100 ms), such as 5ms, such as less than 50ms, less than 10ms, less than 5ms, less than 2ms or less than 0.5 ms;
(j) The solar module is spatially positioned into a mechanically defined constraint position.
Although specific drawbacks of the prior art are mentioned herein, the claimed subject matter is not intended to be limited to implementations that solve some or all of the proposed drawbacks of the prior art. Furthermore, even though particular advantages of the subject matter disclosed herein are mentioned or implemented in the present disclosure, the claimed subject matter should not be limited to implementations having some or all of these advantages.
In the present application, the term "particularly" always means optional features. Furthermore, the expression "a and/or B" generally always includes "a only", "B only" and also "a and B". In the recitation of a list of features, "at least one" includes each feature, and any combination of features. For example, the expression "at least one of features a and B" includes features "a only", "B only" and also "a and B". Similarly, the expression "at least one of features a or B" also includes features "a only", "B only", and "a and B". Similarly, the expression "at least one of the features A, B" also includes the features "a only", "B only" and also "a and B".
Here, the percentages are indicated by% symbols. The following units were used: meter=m; centimeter = cm, millimeter = mm, micrometer = μm; nano=nm; hertz = Hz; second = s; millisecond=ms.
According to one embodiment of the first aspect, the solar module has a plurality of sets of laser machined traces. According to another embodiment, each group has a first type of laser machined trace and a second type of laser machined trace.
According to another embodiment, the solar module has a module region extending in the longitudinal direction for a length of at least 20 cm. According to another embodiment, the module region extends in the longitudinal direction for a length of at least 40cm, for example for a length of at least 50cm or for a length of 70 cm. According to another embodiment, the module region extends over the entire extent of the laser-machined track in the longitudinal direction.
According to one embodiment, each laser machining trace has a width that varies along the laser machining trace. For example, each laser machining trace extends in a longitudinal direction and the width varies along the longitudinal direction of the laser machining trace. According to one embodiment, for each laser machined trace, the (varying) width within the longitudinal section of the associated laser machined trace defines an average width of the associated longitudinal section.
For example, according to one embodiment, the average width of each longitudinal section of the laser machined trace is determined by: for example, the width of the laser machining track is measured in equidistant steps in the longitudinal section and an arithmetic mean value is calculated from the measured values. According to one embodiment, the same length is considered for calculating the average width of the longitudinal sections. For example, according to one embodiment, each trace is divided into longitudinal sections of the same length, and an average width of the laser machined trace in the longitudinal sections is determined for each longitudinal section.
According to one embodiment, the average width of at least a portion (e.g. at least 50%) of the longitudinal sections (e.g. a portion or all of the longitudinal sections) defines a width variation of less than 10 μm and/or less than 50% of the average width of the longitudinal sections defining the width variation. In other words, according to one embodiment, the width variation (which is determined based on at least a portion (e.g. at least 50%) of the longitudinal sections within the module region) is less than 10 μm. For example, according to one embodiment, the width of at least a portion of the longitudinal section of the first type of laser machined trace varies by less than 10 μm. According to another embodiment (e.g. alternatively or additionally), the width of at least a portion of the longitudinal sections of the second type of laser machined track varies by less than 10 μm. According to another embodiment (second alternative described above), the width variation is less than 50% of the average value of the average width of the longitudinal sections defining the width variation. In other words, the average value is formed by the average width of the longitudinal sections defining the width variation (i.e. the longitudinal sections are used to determine the width variation).
According to another embodiment, the width variation as defined in embodiments of the herein disclosed subject matter is less than 5 μm, e.g. less than 3 μm or even less than 2 μm.
According to another embodiment, the width variation as defined in embodiments of the subject matter disclosed herein is less than 30%, such as less than 20%, less than 10%, less than 5%, less than 3%, or even less than 1% of the average value of the average width of the longitudinal sections defining the width variation. According to another embodiment, the percentage is in the interval between 0.1% and 50%, for example in the interval between 1% and 30%.
According to one embodiment, the proportion of "at least a portion of a longitudinal section" includes a proportion of at least 50%, such as at least 60%, at least 70%, at least 80% or at least 90% of the longitudinal section. According to one embodiment, this proportion is 100%. In the above example, this means, for example: the width variation of all relevant longitudinal sections (e.g. of all longitudinal sections of the first type of laser machined track) is less than 10 μm.
According to one embodiment, the expression "at least a part of the plurality of sets" comprises at least 50%, such as at least 60%, at least 70%, at least 80% or at least 90% of the plurality of sets. According to one embodiment, the proportion of groups is 100% (i.e. the specified dimensions apply to all of the groups of solar modules.
According to one embodiment, the expression "at least a portion of the plurality of laser machined traces" includes at least 50%, such as at least 60%, at least 70%, at least 80% or at least 90% of the plurality of laser machined traces. According to one embodiment, the proportion of laser machined traces is 100% (i.e., the specified dimensions apply to all laser machined traces of a plurality of groups of solar modules).
According to one embodiment, the laser processing track (of the solar module) is produced by laser radiation. According to another embodiment, the width variation is made smaller than 10 μm and/or the width variation is smaller than 50% of the average value of the average width of the longitudinal sections defining the width variation by at least one of the following: (i) monitoring the power of the laser radiation; (ii) adjusting the power of the laser radiation; (iii) Determining a focal position of the laser radiation along a propagation direction of the laser radiation; (iv) The focal position of the laser radiation is adjusted along the propagation direction.
According to one embodiment, the length of the longitudinal section is in the interval between 200 μm and 10mm, for example in the interval between 1mm and 5 mm. For example, according to one embodiment, the length of the longitudinal section (i.e. the width of the relevant laser processing track is averaged over said length) is selected such that, for example, the variation of the width of the laser processing track resulting from the pulse superposition of the laser pulses is averaged out and thereby eliminated for further observation.
According to one embodiment, each laser processing trace comprises a plurality of superimposed processing spots, wherein each processing spot is generated by processing the solar module by means of the laser spot. For example, according to one embodiment, the length of the longitudinal section is at least equal to the single diameter of the processing spot.
According to one embodiment, the superimposed processing spots form a periodic profile of the edges of the laser processing track having a period length, and wherein the length of the longitudinal section is greater than the period length. For example, according to one embodiment, the length of the longitudinal section is greater than twice the cycle length or greater than three times the cycle length.
According to one embodiment, for each laser machined trace, the longitudinal sections of the associated laser machined trace define a minimum average width and a maximum average width of the associated machined trace within the module area. According to one embodiment, the minimum average width and the maximum average width are each average values averaged over the relevant longitudinal sections after averaging the widths of the relevant laser processing tracks over the longitudinal sections, respectively.
According to one embodiment, the width variations defined and used herein include a single width variation or two or more different width variations. In other words, the solar module (or method) implements a unique width variation as described herein, or the solar module (or method) implements two or more width variations as described herein. Here, each width variation may be defined in accordance with one or more embodiments described herein.
According to one embodiment, the width variation comprises a first width variation, wherein the first width variation of each laser machined trace is equal to a difference between a maximum average width and a minimum average width of the same laser machined trace. According to another embodiment, the first width variation of at least a portion of the first type of laser machined trace (e.g., at least 50% of the first type of laser machined trace) is less than 10 μm. According to another embodiment, the first width variation of at least a portion of the first type of laser machined trace (e.g., at least 50% of the first type of laser machined trace) is less than 50% of the average widths of the longitudinal sections defining the first width variation.
According to one embodiment, the width variation comprises a second width variation, wherein the second width variation of each laser processing trace is equal to a standard deviation of an average width of the longitudinal section of the associated laser processing trace in the module region. According to another embodiment, the second width variation of at least a portion of the first type of laser machined trace (e.g., at least 50% of the first type of laser machined trace) is less than 10 μm.
According to one embodiment, the second width variation of at least a portion of the first type of laser machined trace (e.g., at least 50% of the first type of laser machined trace) is less than 50% of the average widths of the longitudinal sections defining the second width variation.
According to another embodiment, the first width variation of at least a portion (e.g. at least 50%) of the second type of laser processing trace is less than 10 μm and/or the width variation of at least a portion of the second type of laser processing trace is less than 50% of the average value of the average widths of the longitudinal sections defining the first width variation (relative proportion to the second type of laser processing trace).
According to one embodiment, the first width variation of at least a portion (e.g., at least 50%) of the second type of laser processing trace (e.g., at least 50% of the second type of laser processing trace) is less than 10 μm. According to another embodiment, the first width variation of at least a portion of the second type of laser machined trace (e.g., at least 50% of the second type of laser machined trace) is less than 50% of the average widths of the longitudinal sections defining the width variation.
According to one embodiment, the second width variation of at least a portion of the second type of laser machined trace (e.g., at least 50% of the second type of laser machined trace) is less than 10 μm. According to another embodiment, the second width variation of at least a portion of the second type of laser machined trace (e.g., at least 50% of the second type of laser machined trace) is less than 50% of the average widths of the longitudinal sections defining the width variation.
According to another embodiment, the longitudinal sections of at least a portion of the first type of laser processing trace within the module region (e.g., at least 50% of the first type of laser processing trace) define a minimum average width and a maximum average width in the module region. According to another embodiment, the width variation comprises a third width variation, and the third width variation is equal to a difference between the maximum average width and the minimum average width. According to an embodiment, the third width variation is smaller than 10 μm and/or the third width variation is smaller than 50% of the average value of the average width of the longitudinal sections defining the third width variation.
According to another embodiment, the width variation comprises a fourth width variation, wherein the fourth width variation is equal to a standard deviation of an average width of the longitudinal sections of at least a portion of the first type of laser processed trace (e.g., at least 50% of the first type of laser processed trace). According to another embodiment, the fourth width variation is less than 10 μm. According to another embodiment, the fourth width variation is less than 50% of the average value of the average widths of the longitudinal sections defining the fourth width variation.
According to one embodiment, each laser processing trace for the module region has an average width of less than 300 μm, for example less than 200 μm, less than 100 μm, less than 50 μm, less than 20 μm, less than 10 μm, less than 5 μm or less than 2 μm. According to one embodiment, each laser machined trace has an average width in a range between 1 μm and 300 μm. According to one embodiment, the average width of the module regions is determined as an average value.
According to one embodiment, for each group, the laser machined traces of the first type and the laser machined traces of the second type of the relevant group have a center distance from each other, the center distance varying within the module area and the center distance defining a distance variation for the relevant group. Here, the center distance is typically the distance between the centers (i.e., half width) of the associated laser machining traces, such as the distance between the center of the first type of laser machining trace and the center of the second type of laser machining trace.
According to one embodiment, the distance variation is less than 15 μm for at least a portion of the plurality of sets. According to another embodiment, the distance variation is less than 10 μm or less than 5 μm for at least a portion of the plurality of groups.
According to one embodiment, the first type of laser processing traces of two of the groups have a minimum distance from each other that varies within the module range and defines a group distance variation. According to another embodiment, for at least a portion of the plurality of groups, the group distance between the first type of laser processed traces of adjacent groups varies by less than 15 μm. According to another embodiment, for at least a portion of the plurality of groups, the group distance variation between the first type of laser machined traces of adjacent groups is less than 5% of the average of the center distances defining the group distance variation (i.e., in the embodiment, the center distances between the first type of laser machined traces of each two adjacent groups).
According to one embodiment, for at least a portion of the plurality of sets, the distance variation is less than 90% of an average of the center distances defining the distance variation. According to another embodiment, for at least a portion of the plurality of sets, the distance variation is less than 70% (e.g., less than 50% or less than 30%) of an average of the center distances defining the distance variation. According to another embodiment, for at least a portion of the plurality of sets, the distance variation is less than 20% (e.g., less than 10% or less than 5%) of an average of the center distances defining the distance variation. For example, according to one embodiment, for at least a portion of the plurality of sets, the distance variation is less than 1% of an average of the center distances defining the distance variation.
According to one embodiment, the description of the distance variation of "at least a portion of the plurality of sets" includes a distance variation of at least 50%, such as at least 60%, at least 70%, at least 80% or at least 90% for the plurality of sets (e.g. less than 15 μm). According to one embodiment, the specified distance variation for the groups is applicable to a proportion of 100% (i.e. the specified distance variation is applicable to multiple groups of these groups of solar modules.
According to one embodiment, for each of the plurality of groups, the center distance of the module region defines a minimum distance and a maximum distance, and the distance of the associated group varies by an amount equal to the difference between the maximum distance and the minimum distance.
According to another embodiment, for each group, the distance variation of the relevant group is equal to the standard deviation of the center distance in the module area.
According to another embodiment, the maximum center distance between the first type of laser machined trace and the second type of laser machined trace (of the same group) in all groups (of groups) is less than 200 μm, such as less than 100 μm, such as less than 50 μm, such as less than 20 μm, such as less than 10 μm, such as less than 3 μm.
According to one embodiment, the distance variation is less than 15 μm for all groups of the plurality of groups and/or less than 90% of the average value of the center distances defining the distance variation for all groups of the plurality of groups.
As explained above, according to one embodiment, a (statistical) width variation may also be used in addition to or instead of a (maximum) width variation defined by the difference of the maximum width and the minimum width of the laser-machined track in the module region, said width variation being defined by the standard deviation of the width of the laser-machined track in the module region.
Similarly, according to one embodiment, a (statistical) distance variation defined by the standard deviation of the distances of the first type of laser machined trace and the second type of laser machined trace of the set in the module region may also be used in addition to or instead of a (maximum) distance variation defined by the difference of the maximum distance and the minimum distance of the first type of laser machined trace and the second type of laser machined trace in the module region for (each) set.
According to one embodiment, the surface of the solar module has a first region and a second region thereof, wherein a maximum distance of a surface section of the surface arranged between the first region and the second region from an imaginary straight line passing through the first region and the second region is greater than 100 μm.
According to one embodiment, the first location and the second location are at untreated surface sections of the solar module. For example, according to one embodiment, the first location and the second location are disposed between the first type of laser machined trace and the second type of laser machined trace. According to another embodiment, the first and second locations may be arranged in one of the laser processing tracks, for example in the first laser processing track or in the second laser processing track.
According to one embodiment, the first and the second location are each located in a module region of one of the groups, wherein the module region has a length in the longitudinal direction of at least 20 cm. According to one embodiment, the module region is further constructed according to one or more of the embodiments disclosed herein.
According to one embodiment, the maximum distance of the surface section from the imaginary straight line is more than 500 μm, for example more than 2mm, more than 5mm or more than 10mm.
According to one embodiment, a solar module has a carrier substrate and a layer system on the carrier substrate, wherein the layer system has a plurality of layers. According to another embodiment, each laser-machined trace is formed by removing layer material from at least one of the plurality of layers.
According to one embodiment, the solar module has at least one of the following features:
the carrier substrate is composed of glass, for example of flat glass;
the thickness of the carrier substrate is in the range between 1mm and 4 mm;
the layer system has a conductive layer and an optoelectronically active layer;
the thickness of the layer system is between 100nm and 100 μm.
According to another embodiment, each of the plurality of laser machined traces has one of: (i) a material recess in at least one layer of the layer system; (ii) A material recess in at least one layer of the layer system, said material recess being filled with material of one of the other layers. In other words, each laser machined trace is a material recess in at least one layer of the layer system, wherein the material recess may be filled with material of another layer.
Emphasized here is that: solar modules have other (not depicted) laser machined traces in addition to the laser machined traces described herein. In this regard, the expression "each laser processing trace" refers to each laser processing trace described herein, and not to laser processing traces of a solar module that may be present, others, but not described herein.
According to one embodiment, the substrate is free of layer systems in the edge region. According to one embodiment, the edge region has a distance from the edge of the substrate, wherein the distance may lie in the range between 0mm and 20 mm. For example, the base may be free of layer systems up to the edge of the base (corresponding to a distance of 0mm from the edge). Removing the layer system in the edge region (thereby exposing the carrier substrate in the edge region) is also referred to as "delamination". According to one embodiment, the distance of the edge region from the base edge is between 1mm and 20mm, for example in the range between 1mm and 15 mm.
According to one embodiment, the width of the edge region is between 1mm and 20mm, for example between 2mm and 10 mm. According to one embodiment, the width of the edge area is 3mm.
According to one embodiment, the solar module has a size greater than 0.2 m. According to one embodiment, the solar module has a size of less than 3 m. For example, the solar module in one embodiment has a size in the range between 0.2m and 3 m. According to another embodiment, the solar module has a size greater than 0.3 m. According to yet another embodiment, the solar module has a size of greater than 0.5 m. According to one embodiment, the solar module has a size greater than 0.8 m. According to another embodiment, the solar module has a size of less than 2 m. According to one embodiment, the dimension of the solar module is the length of the solar module.
In general, the description that "a size is within a range having a lower limit and an upper limit" means only: the size lies within this interval and does not itself indicate what kind of fluctuation the size is subjected to.
According to a further embodiment, the module region has a length of at least 0.5 m. According to one embodiment, the module region extends over the entire extent (in the longitudinal direction) of the laser processing track or over the entire extent (in the longitudinal direction) of the solar module.
According to one embodiment, the laser machining trace is linear.
According to one embodiment, each group extends over a width, wherein the width (also referred to herein as group width) is less than 200 μm. According to one embodiment, the group width is in the range between 10 μm and 1 mm. For example, the group width is in the range between 10 μm and 200 μm, for example in the range between 20 μm and 150 μm or in the range between 25 μm and 100 μm. According to one embodiment, the group width is less than 150 μm, for example less than or equal to 100 μm.
According to one embodiment, the groups of laser-machined tracks have a distance from each other, wherein the distance is in the range between 4mm and 20 mm. According to one embodiment, the distance of the set of laser machined traces defines the size of the solar cells of the solar module. Thus, according to one embodiment, the solar module has solar cells with dimensions in the range between 4mm and 20 mm. Thus, according to one embodiment, the solar cell is sized for the width of the solar cell.
According to one embodiment, at least a portion of the laser-machined traces (e.g., each laser-machined trace) have a protrusion at its edge relative to the green surface of the solar module. According to one embodiment, for the associated laser machined trace (e.g., for each laser machined trace), the height of the protrusions within the module area varies relative to the unmachined surface. According to another embodiment, the maximum height of the protrusions in the module area is less than 2 μm, such as less than 1 μm or less than 500nm, in all laser machined traces. According to one embodiment, the maximum height of the protrusions in the module area is less than 200nm, for example less than 100nm.
According to one embodiment of the second aspect, a method for manufacturing a solar module such as described herein (i.e., a solar module according to one or more embodiments of the subject matter disclosed herein) has: multiple sets of laser processing traces are generated using laser radiation.
According to one embodiment, a width variation of less than 10 μm and/or a width variation of less than 50% of the average value of the average width of the longitudinal sections defining the width variation is caused by at least one of: (i) monitoring the power of the laser radiation; (ii) adjusting the power of the laser radiation; (iii) Determining the laser radiation focus position along the laser radiation propagation direction; (iv) adjusting the laser radiation focus position in the propagation direction.
According to one embodiment, the distance variation is less than 15 μm and/or the distance variation for at least a part of the groups is less than 90% of the average value of the center distances defining the distance variation is caused by at least one of: (i) monitoring the power of the laser radiation; (ii) adjusting the power of the laser radiation; (iii) Determining the laser radiation focus position along the laser radiation propagation direction; (iv) adjusting the laser radiation focus position in the propagation direction.
According to one embodiment, a set of first type and second type laser machining traces are generated sequentially in time. For example, according to one embodiment, a solar module, such as a layer provided with a layer system, is processed between the generation of a set of first type of laser processing traces and the generation of second type of laser processing traces. According to another embodiment, the position of an already existing trace section of the first type of laser-machined trace is determined, and the relative position of the trace section to be created of the second type of laser-machined trace is determined based on the determined position of the already existing trace section.
According to one embodiment, the laser machined traces (e.g., the first type of laser machined trace and/or the second type of laser machined trace) are produced at a speed in the range of 0.5m/s to 8 m/s. According to another embodiment, the speed is in the range between 1m/s and 5m/s. For example, the speed at which the laser-machined traces are produced (also referred to as scribe speed) is 2.5m/s.
According to one embodiment, the laser machined traces (e.g., the first type of laser machined trace and/or the second type of laser machined trace) are generated by means of a laser wavelength in the range between 300nm and 1090nm.
For example, the laser wavelength is 355nm, 515nm, 532nm, 1030nm, 1064nm, 1070nm or 1090nm.
According to one embodiment, the method comprises at least one of the following:
determining the relative position of the detection frequency greater than 10 hertz (Hz) (according to one embodiment, the detection frequency is greater than 100Hz, such as greater than or greater than 1000Hz; the detection frequency is in a range between 10Hz and 2000Hz, such as 200Hz, according to one embodiment);
the relative position is determined in steps of not more than 50mm (according to one embodiment, steps of at most 20mm, for example at most 5 mm)
Determining the position of an already existing trace section of the first type of laser processing trace during the generation of the second type of laser processing trace, in particular wherein the position of the already existing trace section is determined at a distance of no more than 20cm (e.g. at most 5cm, at most 1cm, at most 5mm or at most 1 mm) from the processing location defined by the relative positions, wherein the trace section to be created of the second type of laser processing trace is generated at the processing location during the determination of the position of the already existing trace section (in other words the distance between the location determination location and the location processed by means of the laser power adapted thereto is at most 20cm (e.g. at most 5cm, at most 1cm, at most 5mm or at most 1 mm));
Positioning the laser radiation into the relative position, wherein the relative position is determined and the laser radiation is accordingly positioned into the relative position, is performed with a cycle time described herein (e.g., with a cycle time of less than 100 ms).
According to one embodiment, the method further comprises at least one of:
(a) Monitoring the power of the laser radiation;
(b) Adjusting the power of the laser radiation;
(c) Determining a laser radiation focus position along a laser radiation propagation direction;
(d) Adjusting the laser radiation focus position along the laser radiation propagation direction;
(e) Using laser radiation having a depth of field greater than 20 μm, e.g. greater than 100 μm (according to one embodiment, the depth of field of the laser radiation is in the range between 20 μm and 1000 μm)
(f) Detecting a distance between a machine component outputting laser radiation and a solar module;
(g) Detecting a distance between the machine component outputting the laser radiation and the solar module at a detection frequency greater than 10Hz, for example greater than 50Hz, greater than 20200Hz, greater than 1000Hz or greater than 2000Hz (according to one embodiment, the detection frequency is in the interval between 10Hz and 2500 Hz);
(h) Adjusting a distance between a machine component outputting laser radiation and a solar module;
(i) The distance between the machine component outputting the laser radiation and the solar module is adjusted with a cycle time of less than 100ms, for example less than 50ms, less than 10ms, less than 5ms, less than 2ms or less than 0.5ms (according to one embodiment, the cycle time is in the range between 0.1ms and 100 ms), for example 5ms;
(j) The solar module is spatially positioned into a mechanically defined constraint position.
According to one embodiment, for carrying out the method disclosed herein and for manufacturing the solar module disclosed herein, a laser processing device may be used and operated in the manner described in the german patent application with official document number DE 102022109.2. The german patent application with official document number DE 102022 109 318.2 is incorporated herein by reference in its entirety.
According to the disclosed embodiments, this is sufficient for error-free laser processing trace sets (e.g., sets with non-overlapping laser processing traces) even though the distance and/or width variations remain within the ranges described herein for only a portion of the sets or laser processing traces. Thus, embodiments of the subject matter disclosed herein allow efficient fabrication of high efficiency solar modules with laser-machined trace sets that account for only a very small proportion of the solar module area.
According to an embodiment of the first aspect, the solar module is designed to provide the functionality of and/or to provide the functionality required for one or more embodiments disclosed herein, in particular embodiments of the first or second aspect.
According to an embodiment of the second aspect, the method is designed for: providing the functionality of one or more embodiments disclosed herein and/or providing the functionality required for one or more embodiments disclosed herein, in particular embodiments of the first or second aspect.
Unless otherwise indicated, values may be understood to include a window of ± 5%, i.e., for example, according to one embodiment, data of 100 μm includes data within the interval (100 μm ± 5%) = [0.95 μm,1.05 μm ]; and the 50% percent data includes percent data within the interval of 50% ± 5% = [47.5%,52.5% ] according to one embodiment. According to one embodiment, a numerical value is understood to include a window of + -10%.
Exemplary embodiments of the subject matter disclosed herein are described below, with reference to solar modules and methods, for example. It should be emphasized that: of course, any combination of the features of the different aspects, embodiments and examples is possible. In particular, some embodiments are described with reference to methods, while other embodiments are described with reference to solar modules. However, those skilled in the art will derive from the foregoing and following description, claims and accompanying drawings: various aspects, embodiments and example features may be combined and such feature combinations are considered disclosed by the application unless stated otherwise. For example, even features relating to methods may be combined with features relating to devices and vice versa.
According to one embodiment, the methods disclosed herein may define the functionality of the solar modules of the devices disclosed herein that are manufactured by the methods, without being limited to the device-specific features. In this regard, each solar module disclosed herein is intended to implicitly disclose a respective method defined solely by the disclosed functionality. Rather, each of the methods disclosed herein implicitly discloses a corresponding solar module as a result of execution of the method.
Additional advantages and features of the present disclosure will be derived from the following exemplary description of the presently preferred embodiments, to which, however, the claimed invention is not limited. The various figures in the drawings of this document are considered illustrative only and are not drawn to scale.
Drawings
Fig. 1 illustrates a solar module according to an embodiment of the subject matter disclosed herein.
Fig. 2 schematically illustrates a detailed view of a laser processing trace according to an embodiment of the subject matter disclosed herein.
Fig. 3 schematically illustrates a solar module according to an embodiment of the subject matter disclosed herein.
Fig. 4 shows a gradient of the surface of the solar module in fig. 3 along the line IV-IV in fig. 3.
Detailed Description
It should be noted that: in different figures, similar or identical elements or components are provided with the same reference numerals or with reference numerals differing only in the first digit or in an additional letter. Features or elements which are identical or at least functionally identical to corresponding features or elements in another figure are described in detail only when they are first present in the following text, and the description is not repeated when these features and elements (or corresponding reference numerals) are subsequently present.
It is to be understood that the following description of exemplary embodiments of the elements described below and provided with reference numerals are illustrated in the relevant drawings and are configured in accordance with the following description, unless otherwise specified.
Fig. 1 illustrates a solar module 100 according to an embodiment of the subject matter disclosed herein.
According to one embodiment, the solar module 100 has multiple sets of laser machined traces 102, with each set 103 having a first type 104 of laser machined traces 102 and a second type 106 of laser machined traces 102 (a unique set 103 is shown in fig. 1). According to a further embodiment, the solar module has a module region 108, which is schematically illustrated at 110 in fig. 1 on its boundary and has a length 112 of at least 20 cm. As already explained herein, the module area is not a physical feature of the solar module, but is simply an area that is subject to more detailed observations about the subject matter disclosed herein, such as determining a width change, a distance change, or a group distance change (i.e., a distance change between different groups). According to one embodiment, the module region can be positioned arbitrarily on the solar module. According to one embodiment, the longitudinal direction is the average direction of the sets of laser machined traces within the module area.
According to one embodiment, each laser machined trace 102 has a width 113 that varies along the associated laser machined trace 102, for example as shown in fig. 1. According to another embodiment, the width 113 of the laser-machined trace 102 within the longitudinal sections of the associated laser-machined trace 102 defines an average width of each longitudinal section (not shown in fig. 1), wherein within the module region 108, the average width of at least a portion of the longitudinal sections (e.g., at least 50% of the longitudinal sections) defines a width variation.
According to one embodiment, for each laser machined trace 102, the longitudinal section of the associated laser machined trace 102 within the module region 108 has a minimum average width 114 and a maximum average width 116 of the associated laser machined trace 102. As explained above and as explained in more detail below with reference to fig. 2 and 3, the term "average width" means the laser machined trace width averaged over the relevant longitudinal section.
According to one embodiment, the width variation of each laser machined trace 102 is equal to the difference between the maximum average width 116 and the minimum average width 114 of the same laser machined trace 102. Such a width variation is also referred to herein as a first width variation. According to one embodiment, the (first) width variation of at least a portion of the first type of laser machined track (e.g. at least 50% of the laser machined track) is less than 10 μm and/or less than 50% of the average value of the average width of the longitudinal sections defining the width variation.
Furthermore, according to another embodiment, the width variation is given by the standard deviation of the average width of the longitudinal sections of the relevant laser-machined traces in the module region 108. The width variation is also referred to herein as a second width variation.
According to one embodiment, the width variations may include a first width variation and a second width variation, i.e., according to one embodiment, the solar module 100 or its laser processing trace has a first width variation and a second width variation that are within the disclosed value range.
According to another embodiment, for each group, the laser machined traces 102 of the first type 104 and the laser machined traces 102 of the second type 106 of the associated group have a center distance 118 from each other that varies within the module area 108 and defines a distance variation for the associated group 103.
According to one embodiment, the distance change is defined by the difference between the maximum (center) distance 120 and the minimum (center) distance 122.
According to another embodiment, the distance variation of the correlation group 103 is equal to the standard deviation of the center distance 118 in the module region 108.
As explained with reference to the width variations, the distance variations may also include a plurality of "distance variations" (e.g., referred to as a first distance variation for difference formation and a second distance variation for standard deviation) implemented by the laser processing trace 102 at the disclosed value ranges, respectively.
Fig. 2 schematically illustrates a detailed view of a laser machined trace 102 (e.g., the laser machined trace 102 of the first type 104 of fig. 1) in accordance with an embodiment of the subject matter disclosed herein.
According to one embodiment, each machining trace 102 has a plurality of superimposed machining spots, some of which are indicated at 124 in FIG. 2. Here, the shape of the processing spot describes the shape of the laser spot used to make the laser processing trace. For example, the processing spot 124 may be circular or approximately circular, as shown for example in fig. 2. By partially superimposing the processing spots 124, for example as shown in fig. 2, the superimposed processing spots 124 form a curve-extending profile 126, which is shown by thicker lines in fig. 2. In the case of constant pulse superposition, a periodic profile with a period length is obtained.
As already mentioned with reference to fig. 1, according to one embodiment, the width of the laser-machined track 102 is averaged over the longitudinal sections 128 and thereby an average width is defined or determined for each longitudinal section 128. If the length of the longitudinal section 128 is properly dimensioned, the width variations due to the curved profile due to the superimposed processing spots 124 are eliminated. For example, the length 129 of the longitudinal section may be equal to the diameter of the processing spot 124, or an integer multiple thereof.
Fig. 3 schematically illustrates a solar module 200 according to an embodiment of the subject matter disclosed herein.
Fig. 3 shows two sets of laser machined traces, a first set 103 and a second set 203. According to one embodiment, each group has at least two laser machined traces 102, e.g., three laser machined traces 102 as shown in fig. 3. Each set has a first type 104 of laser machined trace 102, a second type 106 of laser machined trace, and a third type 130 of laser machined trace, for example as shown in fig. 3.
According to one embodiment, at least a portion (e.g., at least 50%) of the laser machined traces 102 of the first type 104, such as a longitudinal section of the laser machined traces 102 of the first type 104 including, but not limited to, the first group 103 and the second group 203, define a relevant proportion of a minimum average width 132 and a maximum average width 134 among the laser machined traces of the first type 104 (e.g., among all of the laser machined traces of the first type 104). Thus, the minimum average width 132 and the maximum average width 134 are determined using the average width of all longitudinal sections 128 of the relevant laser machining traces of the first type 104, and in contrast to the embodiment described with reference to fig. 1, not only the single longitudinal section 128 of the laser machining trace 102 is used. Some of the longitudinal sections 128 are labeled 128 in fig. 3. According to one embodiment, the width variation (also referred to herein as a third width variation) is equal to the difference between the maximum average width 134 and the minimum average width 132.
Furthermore, according to another embodiment, the width variation is given by a standard deviation of an average width of at least a portion (e.g., at least 50%) of the laser machined traces 102 of the first type 104 in the module region 108. The width variation is also referred to herein as a fourth width variation.
According to one embodiment, the third width variation and/or the fourth width variation are also within the values disclosed herein.
According to one embodiment, the laser machined traces 102 of the first type 104 of the two groups 103, 203 of groups have a center distance 136 from each other that varies within the module region 108 and defines a group distance variation, i.e., a distance variation of the laser machined traces 102 of different groups. According to one embodiment, the laser machined traces 102 defining the group distance variation are of different types of groups. According to another embodiment, the laser-machined traces 102 defining the set of pitch variations are of the same type, e.g., the first type 104. According to one embodiment, the two groups defining the group spacing variation are adjacent groups, i.e. nearest neighbor groups. According to another embodiment, the two groups defining the group distance variation are next-nearest neighbor groups or even further neighbor groups from each other.
According to one embodiment, for at least a portion of the plurality of groups, the group distance between adjacent groups of the first type of laser processed traces varies by less than 15 μm.
According to another embodiment, for at least a portion of the groups, the group distance variation between the first type of laser processing traces of adjacent groups is less than 5% of an average of the center distances defining the group distance variation.
Similar to the distance variation between the laser machined traces of the first type 104 and the laser machined traces 106 of the second type 106 in the same group described with reference to fig. 1, the group distance variation may also be determined as the difference between the maximum center distance and the minimum center distance (e.g., of the first type of laser machined traces of two adjacent groups) and also as the standard deviation of the center distances (in the module regions 108, respectively).
According to one embodiment, the surface 201 of the solar module 200 has a first portion 138 and a second portion 140, for example as shown in fig. 3. According to one embodiment, the first location and the second location are located in one of the groups, e.g., the module region 108 of group 203, e.g., as shown in fig. 3. According to one embodiment, the first and second locations may be located at the module region 108 or an edge thereof.
Fig. 4 shows the course of the surface 201 of the solar module 200 in fig. 3 along the line IV-IV in fig. 3.
According to one embodiment, the surface section 142 of the surface arranged between the first portion 138 and the second portion 140 has a maximum distance 146 from an imaginary straight line 144 passing through the first portion 138 and the second portion 140. According to one embodiment, the maximum distance 146 is greater than 100 μm, for example greater than 300 μm.
Obviously, reference to laser radiation may also be similarly defined by reference to a laser device outputting laser radiation along a radiation path, and vice versa. In this regard, any reference herein to laser radiation is similar to the disclosure of reference to laser devices and radiation paths of laser radiation.
It should be noted that: the embodiments described herein are only a limited selection of possible embodiments of the present disclosure. It is therefore possible to: the features of the different embodiments are combined with each other in a suitable manner so that a person skilled in the art can, with the aid of the embodiments explicitly disclosed here, consider a plurality of combinations of the different embodiments as disclosed. It should also be mentioned that: terms such as "a" or "an" do not exclude a plurality. Terms such as "comprising" or "having" do not exclude other features or method steps. Thus, according to one embodiment, the term "comprising" or "including" means "including but not limited to having". According to another embodiment, the term "having" or "including" means "consisting of … …". According to one embodiment, the term "designed for" includes, but is not limited to, the meaning of "configured for".
It should also be noted that: reference signs in the claims shall not be construed as limiting the scope of the claims. Furthermore, it should be noted that: reference signs in the description and references to the figures in the description should not be construed as limiting the scope of the description. Rather, the appended drawings illustrate only exemplary embodiments of feature combinations of the various embodiments of the subject matter disclosed herein and are merely illustrative of exemplary embodiments, wherein any other combination of embodiments is equally possible and is contemplated as being disclosed with the present application.

Claims (14)

1. A solar module, comprising:
a plurality of sets of laser machined traces, wherein each set has a first type of laser machined trace and a second type of laser machined trace;
wherein the surface of the solar module has a first portion and a second portion;
wherein an imaginary straight line of the surface passing through the first and second locations at a surface section distance disposed between the first and second locations is greater than 100 μm;
in particular wherein the first and the second location are each located in a module region of one of the groups and the module region has a length in the longitudinal direction of at least 20 cm.
2. The solar module of claim 1,
wherein each of the laser machining traces has a width that varies along the laser machining trace;
wherein for each of the laser machined traces, a width within a longitudinal section of the laser machined trace defines an average width of each longitudinal section;
wherein an average width of at least a portion of the longitudinal sections within the module region defines a width variation; and is also provided with
Wherein the width variation is less than 10 μm, and/or
The width variation is less than 50% of an average value of an average width of the longitudinal sections defining the width variation;
in particular also at least one of the following features (i) to (vi):
(i) Wherein for each of the laser processing traces, the longitudinal sections of the laser processing traces define a minimum average width and a maximum average width of the laser processing traces within the module region; wherein the width variation comprises a first width variation, and wherein for each of the laser machined traces, the first width variation is equal to a difference between a maximum average width and a minimum average width of the same laser machined trace; and wherein at least a portion, in particular at least 50%, of the first type of laser machined trace has a first width variation of less than 10 μm and/or the first width variation is less than 50% of the average value of the average width of the longitudinal sections defining the first width variation;
(ii) Wherein the width variation comprises a second width variation, and wherein for each of the laser-machined traces, the second width variation is equal to a standard deviation of an average width of the longitudinal sections of the laser-machined traces in the module region; wherein at least a portion, in particular at least 50%, of the first type of laser machined trace has a second width variation of less than 10 μm and/or the second width variation is less than 50% of the average value of the average widths of the longitudinal sections defining the second width variation;
(iii) Wherein at least a portion, in particular at least 50%, of the second type of laser machined trace has a first width variation of less than 10 μm and/or the first width variation is less than 50% of the average value of the average width of the longitudinal sections defining the first width variation;
(iv) Wherein at least a portion, in particular at least 50%, of the second type of laser machined trace has a second width variation of less than 10 μm and/or the second width variation is less than 50% of the average value of the average width of the longitudinal sections defining the second width variation;
(v) Wherein at least a portion of the laser processing traces of the first type, at least 50% of the longitudinal sections located within the module region define a minimum average width and a maximum average width in the module region; wherein the width variation comprises a third width variation, and wherein the third width variation is equal to a difference between the maximum average width and the minimum average width; and wherein the third width variation is less than 10 μm, and/or the third width variation is less than 50% of an average value of the average widths of the longitudinal sections defining the third width variation;
(vi) Wherein the width variation comprises a fourth width variation, and wherein the fourth width variation is equal to a standard deviation of an average width of at least a portion, in particular at least 50%, of a longitudinal section of the first type of the laser processed trace; and wherein the fourth width variation is less than 10 μm and/or the fourth width variation is less than 50% of the average value of the average width of the longitudinal sections defining the fourth width variation.
3. The solar module according to claim 1 or 2,
wherein for each group, the first type of laser machined trace and the second type of laser machined trace of the group have a center distance from each other, the center distance varying within the module area and the center distance defining a distance variation of the group;
wherein,
for at least a portion of the plurality of sets, the distance variation is less than 15 μm, and/or the distance variation is less than 90% of an average of center distances defining the distance variation;
in particular also at least one of the following features (i) to (iv):
(i) For each of the plurality of groups, the center distance of the module region defines a minimum distance and a maximum distance, and the distance variation of the group is equal to the difference between the maximum distance and the minimum distance;
(ii) For each group, the distance variation of the group is equal to a standard deviation of the center distance of the group in the module region;
(iii) In all of the plurality of groups, a maximum center distance between the first type of laser machined trace and the second type of laser machined trace of the same group is less than 200 μm;
(iv) The distance variation is less than 15 μm for all of the plurality of groups and/or less than 90% of an average value of center distances defining the distance variation for all of the plurality of groups.
4. The solar module according to claim 1 to 3,
having a carrier substrate and a layer system on the carrier substrate;
wherein the layer system has a plurality of layers; and is also provided with
Wherein each of the laser-machined traces is formed by removing layer material from at least one of the plurality of layers.
5. The solar module of claim 4, having at least one of the following features:
the carrier substrate is composed of glass;
the thickness of the carrier substrate is between 1mm and 4 mm;
the layer system has a conductive layer and an optoelectronically active layer;
the thickness of the layer system is between 100nm and 100 μm.
6. The solar module of any one of claims 4 or 5, wherein each of the laser machined traces is one of:
a material recess in at least one layer of the layer system;
a material recess in at least one layer of the layer system filled with a material of one of the other layers.
7. The solar module of any one of claims 4 to 6, further having at least one of the following features:
the substrate is free of the layer system in an edge region;
the edge region of the substrate is between 0mm and 20mm from the edge of the substrate;
the width of the edge region of the substrate is between 1mm and 20 mm.
8. The solar module of any of the preceding claims, further having at least one of the following features:
the size of the solar module is larger than 0.2m;
the solar module has a size between 0.2m and 3 m.
9. The solar module of any one of the preceding claims, wherein
The module region has a length of at least 0.5m and/or extends over the entire extent of the laser processing trace.
10. The solar module of any of the preceding claims, wherein the laser processing trace is linear.
11. The solar module of any of the preceding claims, wherein each set of laser processed traces extends over a width, and wherein the width is less than 200 μιη.
12. The solar module of any of the preceding claims, wherein the set of laser-machined traces are between 4mm and 20mm from each other.
13. The solar module according to any of the preceding claims,
wherein at least a portion of the laser-machined trace has a protrusion at an edge thereof relative to a green surface of the solar module;
wherein for each of the laser machined traces, the height of the protrusions within the module area varies relative to the unmachined surface;
wherein the maximum height of the protrusions is less than 2 μm in all laser machined traces.
14. A method for manufacturing a solar module according to any one of claims 1 to 13, comprising generating a plurality of sets of laser processing traces using laser radiation, the method further comprising at least one of:
(a) Monitoring the power of the laser radiation;
(b) Adjusting the power of the laser radiation;
(c) Determining a focal position of the laser radiation along a propagation direction of the laser radiation;
(d) Adjusting a focal position of the laser radiation along the propagation direction;
(e) Laser radiation having a depth of field greater than 20 μm, for example greater than 100 μm (according to one embodiment, the depth of field of the laser radiation is between 20 μm and 1000 μm) is used;
(f) Detecting a distance between a machine component outputting the laser radiation and the solar module;
(g) Detecting a distance between a machine component outputting said laser radiation and said solar module at a detection frequency greater than 10Hz, for example greater than 50Hz, greater than 200Hz, greater than 1000Hz or greater than 2000Hz (according to one embodiment, said detection frequency is between 10Hz and 2500 Hz)
(h) Adjusting a distance between a machine component outputting the laser radiation and the solar module;
(i) Adjusting the distance between the machine component outputting the laser radiation and the solar module with a cycle time of less than 100ms (according to one embodiment, the cycle time is between 0.1ms and 100 ms), such as 5ms, for example, less than 50ms, less than 10ms, less than 5ms, less than 2ms, or less than 0.5 ms;
(j) Spatially positioning the solar module into a mechanically defined constrained position.
CN202311267158.0A 2023-09-10 2023-09-28 Solar energy module Pending CN117133821A (en)

Applications Claiming Priority (2)

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