DE202009000615U1 - Molding compound power semiconductor element - Google Patents

Molding compound power semiconductor element Download PDF

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Publication number
DE202009000615U1
DE202009000615U1 DE202009000615U DE202009000615U DE202009000615U1 DE 202009000615 U1 DE202009000615 U1 DE 202009000615U1 DE 202009000615 U DE202009000615 U DE 202009000615U DE 202009000615 U DE202009000615 U DE 202009000615U DE 202009000615 U1 DE202009000615 U1 DE 202009000615U1
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DE
Germany
Prior art keywords
power semiconductor
heat
molding compound
semiconductor element
element according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE202009000615U
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German (de)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Danfoss Silicon Power GmbH
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Danfoss Silicon Power GmbH
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Filing date
Publication date
Application filed by Danfoss Silicon Power GmbH filed Critical Danfoss Silicon Power GmbH
Priority to DE202009000615U priority Critical patent/DE202009000615U1/en
Priority to PCT/DE2010/000019 priority patent/WO2010081465A2/en
Publication of DE202009000615U1 publication Critical patent/DE202009000615U1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Abstract

Formmassenvergossenes Leistungshalbleiterelement, bei dem ein Leistungshalbeiter mit metallischen, an die Außenseite eines Moldmoduls geführten Kontakten in Umhüllungsspritzen mit Duroplasten umgeben ist, und wobei zur Wärmeableitung einer Bodenseite eine Wärmeleitungsstrecke wenigstens durch den Halbleiter und einen Substratträger vorhanden ist, dadurch gekennzeichnet, daß
wenigstens eine wenigstens im Bereich eines der Kontakte des Halbleiters auf seiner Oberseite einen der Kontakte flächig bedeckend ausgebildete Kontaktlasche angesetzt ist,
auf dem wenigstens einen flächigen Abschnitt der Kontaktlasche wärmeleitend zur Oberseite des Moldmoduls wenigstens ein wärmeleitendes Element zur Ausbildung einer zweiten wärmeableitenden Brücke an die Außenseite des Moduls vorgesehen ist.A molding compound encapsulated power semiconductor element in which a Leistungshalbeiter with metallic, guided to the outside of a Moldmoduls contacts in cladding syringes with thermosets is surrounded, and wherein for heat dissipation of a bottom side a heat conduction path at least through the semiconductor and a substrate carrier is present, characterized in that
at least one contact lug formed covering at least in the region of one of the contacts of the semiconductor on its upper side one of the contacts,
on the at least one flat portion of the contact tab heat-conducting to the top of the mold module at least one heat-conducting element for forming a second heat-dissipating bridge is provided to the outside of the module.

Figure 00000001
Figure 00000001

Description

Die Erfindung betrifft ein formmassenvergossenes Leistungshalbleiterelement.The The invention relates to a molding compound power semiconductor element.

Bei Leistungshalbleiterelementen, insbesondere bei solchen mit Formverguss werden die Bauelemente üblicherweise nur einseitig durch das Substrat oder das Stanzgitter einen Kühlungspfad zum äußeren Kühlkörper aufweisen. Diese Ableitung der gesamten erzeugten Verlustleistung über nur einen definierten Kühlpfad ist mit Problemen behaftet. Zum einen führt dieser Kühlpfad von der Unterseite des Halbleiterelementes durch das Substrat der Baugruppe beziehungsweise durch ein Stanzgitter an eine äußere Fläche des formvergossenen Leistungshalbleitermoduls (des s. g. mold packages). Von dort wird die Verlustleistung üblicherweise über Wärmeleitpasten an Luft oder Wasserkühler abgegeben.at Power semiconductor elements, in particular in those with mold casting The components are usually only one side through the substrate or the lead frame a cooling path to the outer heat sink. This derivation of the total generated power loss over only a defined cooling path is fraught with problems. First, this cooling path leads from the underside of the semiconductor element through the substrate of the assembly or by a stamped grid to an outer surface of the molded power semiconductor module (of the so-called mold package). From there, the power loss is usually over thermal grease in air or water cooler issued.

Andererseits ist schon bekannt, dass die Verlustleistung in einem Halbleiter insbesondere bei einem MOSFET und IGBE-Bauelementen einige 10 μm bis 100 μm unterhalb der Kontaktoberfläche des Halbleiters entsteht. Dies entspricht also den oberen 20% der üblichen Gesamtdicke eines Halbleiters.on the other hand It is already known that the power loss in a semiconductor especially in a MOSFET and IGBE devices some 10 microns to 100 microns below the contact surface of the semiconductor arises. This corresponds to the upper 20% of the usual Total thickness of a semiconductor.

Da die Montage des Halleiters auf dem Substrat/Stanzgitter üblicherweise auf seiner Unterseite (der von Source-Kontakt bzw. Emitter und Gate abgewandten Seite) erfolgt, ist lediglich der Drain- bzw. Kollektoranschluss an der Unterseite. Die Verlustleistung muss daher im wesentlichen durch die Trägerschichten des Siliziums bis zum Substrat, also durch ca. 80% der Gesamtdicke des Halbleiters geführt werden. Dieser lange Entwärmungspfad führt bei möglichst effektivem Betrieb (hohe Stromlast pro Halbleiterfläche) zu einer starken Erwärmung der Sperrschicht des Halbleiters und dies hat weitere ungünstige Folgen.There the mounting of the semiconductors on the substrate / stamped grid usually on its bottom (that of source contact or emitter and gate opposite side), is only the drain or collector terminal on the bottom. The power loss must therefore be substantially through the carrier layers of the silicon to the substrate, ie by about 80% of the total thickness of the semiconductor. This long heat removal path leads as possible effective operation (high current load per semiconductor area) too a strong warming the junction of the semiconductor and this has further unfavorable consequences.

Im Stand der Technik werden diese Module auch als Halbleiter-Moldpackages (also als mit Duroplast umspritzte Umhüllungskörper einer elektronischen Baugruppe mit mindestens einen Halbleiterelement) bezeichnet und sind als robuste, umhüllungsgespritzte Baugruppen bekannt, in denen für bestimmte Anwendungen (z. B. Motorsteuerungen) vorzugweise Leistungsbauelemente mit besonders hoher Verlustleistung zugefasst werden.in the State of the art, these modules are also called semiconductor mold packages (ie as encapsulated with thermoset enclosing body of an electronic module with at least one semiconductor element) and are as robust, sheath-sprayed Assemblies are known in which for certain Applications (eg motor controllers) preferably power components be covered with a particularly high power loss.

Die Oberseite solcher Halbleiterbauelemente ist üblicherweise durch bogenförmig aufgesetzte Kontaktdrähte (Bonddrähte) mit anderen Leiterbahnen des Substrates oder des Stanzgitters verbunden und von isolierender Duroplastmasse umhüllt. Die sehr geringe Wärmeleitung der Duroplastmassen (< 1 W/mK) führt nur zu einer sehr geringen Leitung von Verlustwärme durch den Umhüllungskörper an die Umgebung.The Top of such semiconductor devices is usually by arcuate patch contact wires (bonding wires) with connected to other tracks of the substrate or the lead frame and surrounded by insulating Duroplastmasse. The very low heat conduction of thermoset compounds (<1 W / mK) only to a very small line of heat loss through the enclosure body the environment.

Die oben erwähnten ungünstigen Folgen bestehen daher in:

  • • geringere Lebensdauer durch höhere Sperrschichttemperatur
  • • früheres Ablösen der Bonddrähte (Wirebond lift off) bei hoher mittlerer Betriebstemperatur bei wechselnden Lasten
  • • Suboptimaler Maximalstrom (uneffektive Ausnutzung der Siliziumfläche)
  • • Größeres Volumen durch unsymmetrische, äußere Kühlkörper der gesamten Baugruppe
The above-mentioned unfavorable consequences therefore exist in:
  • • reduced service life due to higher junction temperature
  • • earlier detachment of the bonding wires (Wirebond lift off) at high mean operating temperature with changing loads
  • • Suboptimal maximum current (inefficient utilization of silicon area)
  • • Larger volume due to asymmetrical, outer heat sinks of the entire assembly

Bei der Fertigung des Moldpackage nach dem Stand der Technik sind durch den unsymmetrischen Aufbau (Bauteileträger unten und großes Moldvolumen oben) starke Verformungen durch unsymmetrisches Schrumpfen zu beobachten. Nur durch langwierige Temperung kann diese Verwerfung vermindert werden.at the production of Moldpackage according to the prior art are by the asymmetrical structure (component carrier below and large mold volume above) strong deformations due to asymmetrical shrinkage. Only by prolonged tempering can this fault be reduced become.

Die Erfindung hat sich daher zur Aufgabe gestellt, eine verbesserte Ableitung der Verlustwärme zu ermöglichen. Erfindungsgemäß wird dies durch ein formvergossenes Halbleistungshalbleitermodul mit den Merkmalen des Hauptanspruches gelöst. Die Unteransprüche geben vorteilhafte Ausführungsformen der Erfindung wieder.The Invention has therefore set itself the task of improving Derivation of the lost heat too enable. According to the invention this is by a molded semicon power semiconductor module having the features solved the main claim. The dependent claims give advantageous embodiments the invention again.

Besonders vorteilhaft ist, dass die Betriebsbedingungen der Halbleiter und die damit verbundenen Nachteile durch einen weiteren Entwärmungspfad zur Umgebung deutlich verringert werden können. Der Wärmepfad soll auf der dem vorhandenen Substrat, gegenüberliegenden Seite des Moldpackage an die Umgebung geführt werden. Dort kann dann thermischer Kontakt zu einem Luft- oder Wasserkühler hergestellt werden.Especially It is advantageous that the operating conditions of the semiconductor and the associated disadvantages by another Entwärmungspfad can be significantly reduced to the environment. The heat path should be on the existing substrate, opposite Side of Moldpackage be led to the environment. There can then thermal contact to an air or water cooler are made.

Der zusätzliche Wärmepfad steigert die Wärmeabfuhr um 20% bis 30% und um den gleichen Anteil sinkt der verlustleistungsbedingte Temperaturhub in der Sperrschicht des Halbleiters. Dieser geringere Temperaturhub kann nun für eine gesteigerte Lebensdauer oder erhöhte Stromabgabe genutzt werden.Of the additional thermal path increases the heat dissipation by 20% to 30% and by the same proportion the loss-related Temperature swing in the junction of the semiconductor. This lower temperature swing can now for an increased life or increased power output can be used.

Der zusätzliche Entwärmungspfad beginnt dabei in sehr günstiger Weise auf der heißen Oberseite des Halbleiters und wird durch folgenden Aufbau realisiert:

  • 1. Anstelle der üblichen Bonddrähte werden durch Löten, Sintern oder Leitkleben überwiegend ebene Kontaktlaschen zur elektrischen Kontaktierung eingesetzt. Optionen: a. Die Kontaktlasche kann Bestandteil eines zweiten, ausgedehnten Stanzgitters sein. b. Die Kontaktlasche kann in Ihrem Verlauf eine partielle elektrische Isolierung tragen (Isolierlacke, Polyimidschlauch) zur Vermeidung möglicher, montagebedingter Berührungen von potentialtragenden Leiterbahnen oder Bauteilberandungen.
  • 2. Auf diesen Kontaktlaschen kann nun durch Löten, Sintern oder Leitkleben eine thermisch und elektrisch leitende Brücke aufgesetzt werden, die den Wärmepfad bis zur Oberfläche des Moldpackages verlängert. Optionen: a. Eine weitere Funktion dieser metallischen Wärmebrücke ist die Gestaltung als nachgiebiges Element. Diese Eigenschaft ist erforderlich, um die technisch bedingten Dickentoleranzen aller gestapelten Materialien durch Nachgeben beim Schließen des Spritzwerkzeugen auszugleichen. Durch eine z. B. ballige Formgebung der Wärmebrücke wird sichergestellt, dass keine positive Dickentoleranz entsteht und so Halbleiterbauelemente durch Schließkraft des Werkzeuges zerstört werden. Nach dem Schließen des Spritzwerkzeuges folgt das Einpressen der Duroplastmasse und das vollständige Ausfüllen der verbliebenen Hohlräume innerhalb des Werkzeuges. Eine weitere Verformung der Wärmebrücke ist danach nicht mehr möglich. b. Die Balligkeit soll vorzugsweise so orientiert werden, dass die konvexe Seite dem Inneren des Moldpacke zugewandt ist. Die konkave Seite ist demnach an äußeren Fläche dem geschlossenen Werkzeug zugewandt. Damit wird erreicht, dass ein Eindringen der Duroplastmasse (das Overmold) zwischen Wärmebrücke und Werkzeugwand verhindert wird. Eine Nacharbeit zur Beseitigung von Duroplast-Flecken entfällt.
  • 3. Für viele Anwendungen ist zusätzlich eine potentialfreie Entwärmung erforderlich. Dann wird eine möglichst gut Wärme leitende Keramik (z. B. Aln, Al2O3) unterhalb oder oberhalb der metallischen Wärmebrücke in den Wärmepfad durch Löten, Sintern oder Leitkleben zur elektrischen Isolation eingesetzt. Das Nachgeben der Wärmebrücke ist auch bei Einsatz einer elektrischen Isolation vorteilhaft.
  • 4. Optionen: a. Der elektrische Isolator kann ein Wärme leitender Keramikkörper (AlN oder Al2O3) auf der Kontaktlasche des Halbeiters sein. b. Der elektrische Isolator kann eine Wärme leitende Schicht sein, die beispielsweise auf der Wärmebrücke (unten oder oben) durch (kaltgas- oder plasmagespritztes AlN oder Al2O3) aufgebracht ist und dann durch Löten, Sintern oder Kleben stoffschlüssig verbunden wird. c. Der elektrische Isolator kann ein Wärme leitender Keramikkörper (AlN oder Al2O3) oder eine keramische Schicht auf der Außenseite des Moldpackage auf den Flächen der Stanzgitter und der Wärmebrücke
The additional cooling path starts in a very favorable manner on the hot upper side of the semiconductor and is realized by the following structure:
  • 1. Instead of the usual bonding wires mainly flat contact tabs are used for electrical contacting by soldering, sintering or conductive bonding. Options: a. The contact tab may be part of a second, extended punched grid. b. The contact tab can carry in its course a partial electrical insulation (insulating coatings, polyimide hose) to avoid mögli holes caused by mounting of potential-carrying conductor tracks or component boundaries.
  • 2. On these contact tabs can now be placed by soldering, sintering or conductive bonding a thermally and electrically conductive bridge, which extends the heat path to the surface of Moldpackages. Options: a. Another function of this metallic thermal bridge is the design as a resilient element. This property is necessary to compensate for the technical thickness tolerances of all stacked materials by yielding when closing the injection molds. By a z. B. spherical shaping of the thermal bridge ensures that no positive thickness tolerance arises and so semiconductor devices are destroyed by closing force of the tool. After closing the injection molding tool, pressing in of the thermoset compound and complete filling of the remaining cavities within the tool are followed. Further deformation of the thermal bridge is then no longer possible. b. The crowning should preferably be oriented so that the convex side faces the interior of the moldpack. The concave side is accordingly facing the closed tool on the outer surface. This ensures that penetration of the thermoset compound (the overmold) between the thermal bridge and the tool wall is prevented. There is no need for reworking to remove thermoset stains.
  • 3. For many applications additional potential-free cooling is required. Then, as good as possible a heat-conducting ceramic (eg Aln, Al2O3) is used below or above the metallic thermal bridge in the heat path by soldering, sintering or Leitkleben for electrical insulation. The yielding of the thermal bridge is also advantageous when using electrical insulation.
  • 4. Options: a. The electrical insulator may be a heat-conducting ceramic body (AlN or Al2O3) on the contact tab of the semiconductor worker. b. The electrical insulator may be a heat-conducting layer, which is applied for example on the thermal bridge (bottom or top) by (cold gas or plasma sprayed AlN or Al2O3) and then bonded by soldering, sintering or gluing. c. The electrical insulator can be a heat-conducting ceramic body (AlN or Al 2 O 3 ) or a ceramic layer on the outside of the mold package on the surfaces of the stamped grid and the thermal bridge

Die unsymmetrische Schrumpfung mit den ungünstigen Formverwerfungen entfält vorteilhafterweise duch die Füllung des Moldkörpers mit dem zusätzlichem Material der Wärmebrücke. Der energieaufwendige Temperprozess entfällt.The asymmetrical shrinkage with the unfavorable shape distortions entfält advantageously through the filling of the mold body with the additional Material of the thermal bridge. Of the energy-intensive annealing process is eliminated.

Weitere Merkmale der Erfindung ergeben sich aus der nachfolgenden Beschreibung anhand eines bevorzugten Ausführungsbeispiels. Dabei zeigt:Further Features of the invention will become apparent from the following description based on a preferred embodiment. Showing:

1 die erfindungsgemässe Baugruppe (substratlos) mit einem zweiten Wärmepfad nach oben durch eine Metall-Kontaktlasche und einen elektrisch isolierenden, aber Wärme leitenden Isolierkörper, 1 the assembly according to the invention (substrateless) with a second heat path up through a metal contact tab and an electrically insulating but heat-conducting insulating body,

2 den Stand der Technik in Form einer Moldpackage-Baugruppe mit Stanzgitter als Bauteileträger (also substratlos) 2 The state of the art in the form of a mold package assembly with punched grid as component carrier (ie, substrateless)

3 den Stand der Technik in Form einer Moldpackage-Baugruppe mit DCB-Substrat als Bauteileträger (und einem Stanzgitter für die elektrischen Anschlüsse) 3 the state of the art in the form of a mold package assembly with DCB substrate as component carrier (and a punched grid for the electrical connections)

4 die erfindungsgemässe Baugruppe mit einem zweiten Wärmepfad nach oben durch eine Metall-Kontaktlasche und einen elektrisch isolierenden, aber Wärme leitenden Isolierkörper, mit einem DCB-Substrat als Bauteileträger und einem zweiten DCB als zweiter (elektrisch isolierter Hauptwärmebrücke (und einem Cu-Stanzgitter für die Kontaktierung des Substrats und einem zweiten Stanzgitter zur Laschenkontaktierung des Halbleiters mit nachgiebiger balliger Ausprägung) und 4 the inventive assembly with a second heat path up through a metal contact tab and an electrically insulating, but heat-conducting insulator, with a DCB substrate as a component carrier and a second DCB as a second (electrically insulated main heat bridge (and a Cu punched grid for contacting the substrate and a second punched grid for tab contacting the semi-conductor with a compliant spherical shape) and

5 die erfindungsgemässe Baugruppe mit einem zweiten Wärmepfad nach oben durch eine Metall-Kontaktlasche und einen elektrisch leitende ballig geprägte Al oder Cu-Scheibe die mit einer dünnen Polyimindschicht elektrisch von den Spannungen der Leistungselektronik getrennt ist. 5 the inventive assembly with a second heat path up through a metal contact tab and an electrically conductive spherically embossed Al or Cu disc is electrically separated from the voltages of the power electronics with a thin Polyimindschicht.

In der 1 wird der erfindungsgemäße formmassenvergossene Leistungshalbleitleiter als Modul mit einem an der Seite herausragenden Stanzgitter 19, 24 dargestellt, so dass auf ein Substrat verzichtet werden kann und das Stanzgitter als Bauteileträger dient. Oberhalb des Stanzgitters 10 ist über eine Lotschicht oder eine Ag-Sinterschicht ein Leistungshalbleiter 12 angeordnet, der mit Bonddrähten 14 elektrisch kontaktiert wird. Der erfindungsgemäße elektrische Kontakt 16 an der Oberseite kann als Kupfer- oder Silberlasche mit einer darunter liegenden Polyimidisolierung 18 flächig auf die größeren Kontakte des Halbleiters an der Oberseite aufgelegt werden.In the 1 the molding compound power semiconductor conductor according to the invention is a module with a stamped grid projecting on the side 19 . 24 represented, so that can be dispensed with a substrate and the punched grid serves as a component carrier. Above the stamped grid 10 is a power semiconductor via a solder layer or an Ag-sintered layer 12 arranged with bond wires 14 is contacted electrically. The electrical contact according to the invention 16 at the top can act as a copper or silver tab with an underlying polyimide insulation 18 be placed flat on the larger contacts of the semiconductor at the top.

Oberhalb dieser Lasche ist ein wärmeleitender Körper, beispielsweise ein keramischer Isolierkörper 20 mit wiederum Lot- oder Wärmeleitungspaste angeordnet.Above this tab is a thermally conductive body, such as a ceramic insulation body 20 arranged in turn with solder or heat conduction paste.

Oberhalb dieses wiederum ist (zur Verdeutlichung mit einem tatsächlich so nicht vorhandenen weis belassenen Freiraum) eine metallische Wärmebrücke, z. B. eine balliggeprägte Aluminium- oder Kupferscheibe dargestellt.Above this in turn is (for clarification with one actually so absence of existing white space left) a metallic thermal bridge, z. B. a crowned Aluminum or copper disc shown.

Es kann jedoch auch nur ein wärmeleitender Körper vorgesehen werden, also lediglich eine dünne, isolierende Schicht auf die Leiterlasche aufgelegt werden und dann direkt der thermische Kontakt zu einer Metallscheibe oder auch nur einem keramischen Leitelement gesucht werden.It However, only a thermally conductive body can be provided be just a thin, insulating layer to be placed on the conductor strap and then directly the thermal contact with a metal disc or even only a ceramic guide element to be sought.

2 zeigt einen Aufbau ohne Substrat nach dem Stand der Technik, 3 einen Aufbau auf einem DCB (direct copper bond substrat) nach dem Stand der Technik. 2 shows a structure without substrate according to the prior art, 3 a construction on a DCB (direct copper bond substrate) according to the prior art.

In 4 ist das erfindungsgemässe formmassenvergossenes Leistungshalbleiterelement, bei dem ein Leistungshalbeiter mit metallischen, an die Außenseite eines Moldmoduls geführten Kontakten in Umhüllungsspritzen mit Duroplasten umgeben ist, und wobei zur Wärmeableitung einer Bodenseite eine Wärmeleitungsstrecke wenigstens durch den Halbleiter und einen Substratträger vorhanden ist, mit zwei DCB dargestellt, einem DCB-Substrat als Bauteileträger und einem zweiten DCB als zweiter (elektrisch isolierter) Haupt-Wärmebrücke (und einem Cu-Stanzgitter für die Kontaktierung des Substrats und einem zweiten Stanzgitter zur Laschenkontaktierung des Halbleiters mit nachgiebiger balliger Ausprägung) wodurch ebenfalls ein zweiter Wärmepfad nach oben durch eine Metall-Kontaktlasche und einen elektrisch isolierenden, aber Wärme leitenden Isolierkörper über wenigstens einen Bereich eines Kontakts des Halbleiters auf seiner Oberseite gebildet ist.In 4 is the inventive molding compound power semiconductor element in which a Leistungshalbeiter with metallic, guided to the outside of a Moldmoduls contacts in cladding syringes with thermosets is surrounded, and wherein for heat dissipation of a bottom side a heat conduction path at least by the semiconductor and a substrate carrier is present, represented by two DCB, a DCB substrate as a component carrier and a second DCB as a second (electrically isolated) main thermal bridge (and a Cu punched grid for contacting the substrate and a second punched grid for Laschenkontaktierung the semiconductor with yielding spherical expression) whereby also a second heat path upwards is formed by a metal contact tab and an electrically insulating, but heat-conducting insulator over at least a portion of a contact of the semiconductor on its upper side.

Wie zuvor ist eine den Kontakte flächig bedeckend ausgebildete Kontaktlasche realisiert, die Balligkeit legt sich ohne Lunker im wesentlichen vollflächig an (d. h. die Balligkeit der Darstellung ist überdeutlich vorgesehen).As previously one of the contacts is flat Covering trained contact lug realized, the crown settles without cavities essentially over the entire surface (that is, the crown the presentation is clear intended).

Das auf dem wenigstens einen flächigen Abschnitt der Kontaktlasche wärmeleitend zur Oberseite des Moldmoduls vorgesehene wenigstens eine wärmeleitende Element zur Ausbildung einer zweiten wärmeableitenden Brücke an die Außenseite des Moduls ist hier ein DCB.The on the at least one flat Section of the contact tab thermally conductive provided at the top of the mold module at least one heat-conducting Element for forming a second heat-dissipating bridge to the outside of the module here is a DCB.

Dass das wenigstens eine wärmeleitenden Element zur Oberseite des Umhüllungskörpers eine keramische Schicht sein kann, ist durch die Schicht 40 in 5 angedeutet. Die keramische Schicht kann eine keramische Platte sein, oder eine durch Plasmaspritzen auf die metallische Kontaktlasche – oder wie in 5 dargestellt auf eine darunterliegende ballige Metallplatte – aufgespritzte Schicht.That the at least one heat-conducting element to the top of the enclosure body may be a ceramic layer is through the layer 40 in 5 indicated. The ceramic layer may be a ceramic plate, or one by plasma spraying on the metallic contact tab - or as in 5 Shown on an underlying spherical metal plate - sprayed layer.

Die wärmeleitende metallische Platte kann auch allein eingesetzt werden, sie ist dann aber bevorzugt durch eine dünne Isolierschicht – wie ebenfalls der 5 zu entnehmen – von der stromführenden Kontaktlasche zu trennen.The thermally conductive metallic plate can also be used alone, but it is then preferred by a thin insulating layer - as well as the 5 to remove - to separate from the current-carrying contact tab.

Die in einer bevorzugten Ausführungsform vorgeschlagene Balligkeit der metallischen Platte ist mit einer leicht konkaven Wölbung auf den Leistungshalbleiter hin vorgesehen.The proposed in a preferred embodiment The crown of the metallic plate is slightly concave bulge provided on the power semiconductor down.

Naben der Isolierung oberhalb der Kontaktlasche ist auch der freigeführte Teil der Lasche (der schmaler sein kann) elektrisch zu isolieren, z. B. durch einen Schlauch 18 wie in 1 oder eine untergelegte Isolierblatt, um jedenfalls gegenüber dem Stanzgitter zu isolieren.Hubs of insulation above the contact tab is also the exposed part of the tab (which may be narrower) to electrically isolate, for. B. by a hose 18 as in 1 or an underlaid insulating sheet in order to isolate in any case with respect to the stamped grid.

Das wärmeleitende Element kann ein fester Keramikkörper oder auch eine kompressible, elektrisch und thermisch leitfähige Schicht aus sinterfähigem Metallpartikeln sein.The thermally conductive Element can be a solid ceramic body or else a compressible, electrically and thermally conductive layer made of sinterable Be metal particles.

Claims (8)

Formmassenvergossenes Leistungshalbleiterelement, bei dem ein Leistungshalbeiter mit metallischen, an die Außenseite eines Moldmoduls geführten Kontakten in Umhüllungsspritzen mit Duroplasten umgeben ist, und wobei zur Wärmeableitung einer Bodenseite eine Wärmeleitungsstrecke wenigstens durch den Halbleiter und einen Substratträger vorhanden ist, dadurch gekennzeichnet, daß wenigstens eine wenigstens im Bereich eines der Kontakte des Halbleiters auf seiner Oberseite einen der Kontakte flächig bedeckend ausgebildete Kontaktlasche angesetzt ist, auf dem wenigstens einen flächigen Abschnitt der Kontaktlasche wärmeleitend zur Oberseite des Moldmoduls wenigstens ein wärmeleitendes Element zur Ausbildung einer zweiten wärmeableitenden Brücke an die Außenseite des Moduls vorgesehen ist.A molding compound encapsulated power semiconductor element in which a Leistungshalbeiter with metallic, guided to the outside of a Moldmoduls contacts in cladding syringes with thermosets is surrounded, and wherein for heat dissipation of a bottom side a heat conduction path at least by the semiconductor and a substrate carrier is present, characterized in that at least one at least in Region of one of the contacts of the semiconductor on its upper side of one of the contacts covering covering formed contact tab is provided on the at least one flat portion of the contact plate heat-conducting to the top of the mold module at least one thermally conductive element for forming a second heat-dissipating bridge to the outside of the module. Formmassenvergossenes Leistungshalbleiterelement nach Anspruch 1, dadurch gekennzeichnet, dass wenigstens eines der wärmeleitenden Element zur Oberseite des Umhüllungskörpers eine keramische Schicht ist.Molding compound power semiconductor element according to claim 1, characterized in that at least one of thermally conductive Element to the top of the casing body ceramic layer is. Formmassenvergossenes Leistungshalbleiterelement nach Anspruch 2, dadurch gekennzeichnet, dass die keramische Schicht eine keramische Platte ist.Molding compound power semiconductor element according to claim 2, characterized in that the ceramic layer a ceramic plate is. Formmassenvergossenes Leistungshalbleiterelement nach Anspruch 2, dadurch gekennzeichnet, dass die keramische Schicht durch Plasmaspritzen auf die metallische Kontaktlasche aufgespritzt ist.Molding compound power semiconductor element according to claim 2, characterized in that that the ceramic layer is sprayed on the metallic contact tab by plasma spraying. Formmassenvergossenes Leistungshalbleiterelement nach einem der vorangehenden Ansprüche, dadurch gekennzeichnet, dass wenigstens eines der wärmeleitenden Elemente eine metallische Platte ist.Molding compound power semiconductor element according to one of the preceding claims, characterized that at least one of the heat-conducting Elements is a metallic plate. Formmassenvergossenes Leistungshalbleiterelement nach Anspruch 5, dadurch gekennzeichnet, dass die metallische Platte ballig ausgebildet ist mit einer leicht konkaven Wölbung auf den Leistungshalbleiter hin.Molding compound power semiconductor element according to claim 5, characterized in that the metallic plate crowned is formed with a slightly concave curvature the power semiconductor down. Formmassenvergossenes Leistungshalbleiterelement nach einem der vorangehenden Ansprüche, dadurch gekennzeichnet, dass unterhalb des freigeführten Teils der metallischen Kontaktlasche eine isolierende Lagenschicht eingelegt ist.Molding compound power semiconductor element according to one of the preceding claims, characterized that underneath the freed Part of the metallic contact tab an insulating layer layer is inserted. Formmassenvergossenes Leistungshalbleiterelement nach einem der vorangehenden Ansprüche, dadurch gekennzeichnet, dass das wärmeleitende Element eine kompressible, elektrisch und thermisch leitfähige Schicht aus sinterfähigem Metallpartikeln ist.Molding compound power semiconductor element according to one of the preceding claims, characterized that the heat-conducting element a compressible, electrically and thermally conductive layer made of sinterable Metal particles is.
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