DE2008397C3 - Verfahren zum Herstellen eines Kontaktes auf einem n-leitenden Galliumarsenidsubstrat - Google Patents

Verfahren zum Herstellen eines Kontaktes auf einem n-leitenden Galliumarsenidsubstrat

Info

Publication number
DE2008397C3
DE2008397C3 DE2008397A DE2008397A DE2008397C3 DE 2008397 C3 DE2008397 C3 DE 2008397C3 DE 2008397 A DE2008397 A DE 2008397A DE 2008397 A DE2008397 A DE 2008397A DE 2008397 C3 DE2008397 C3 DE 2008397C3
Authority
DE
Germany
Prior art keywords
tin
layer
gallium arsenide
contact
arsenide substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2008397A
Other languages
German (de)
English (en)
Other versions
DE2008397B2 (enExample
DE2008397A1 (de
Inventor
John Calhoun Berkeley Heights Irvin
Bertram Westfield Schwartz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of DE2008397A1 publication Critical patent/DE2008397A1/de
Publication of DE2008397B2 publication Critical patent/DE2008397B2/de
Application granted granted Critical
Publication of DE2008397C3 publication Critical patent/DE2008397C3/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H01L21/28581—Deposition of Schottky electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6738—Schottky barrier electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/675—Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
DE2008397A 1969-02-26 1970-02-24 Verfahren zum Herstellen eines Kontaktes auf einem n-leitenden Galliumarsenidsubstrat Expired DE2008397C3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US80243969A 1969-02-26 1969-02-26

Publications (3)

Publication Number Publication Date
DE2008397A1 DE2008397A1 (de) 1970-09-17
DE2008397B2 DE2008397B2 (enExample) 1973-12-06
DE2008397C3 true DE2008397C3 (de) 1974-07-04

Family

ID=25183715

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2008397A Expired DE2008397C3 (de) 1969-02-26 1970-02-24 Verfahren zum Herstellen eines Kontaktes auf einem n-leitenden Galliumarsenidsubstrat

Country Status (10)

Country Link
US (1) US3585075A (enExample)
BE (1) BE746471A (enExample)
CH (1) CH511513A (enExample)
DE (1) DE2008397C3 (enExample)
ES (1) ES377150A1 (enExample)
FR (1) FR2033398B1 (enExample)
GB (1) GB1296096A (enExample)
IE (1) IE34031B1 (enExample)
NL (1) NL7002447A (enExample)
SE (1) SE362989B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2394894A1 (fr) * 1977-06-17 1979-01-12 Thomson Csf Dispositif de prise de contact sur un element semiconducteur
JPS5817649A (ja) * 1981-07-24 1983-02-01 Fujitsu Ltd 電子部品パツケ−ジ

Also Published As

Publication number Publication date
CH511513A (de) 1971-08-15
US3585075A (en) 1971-06-15
NL7002447A (enExample) 1970-08-28
FR2033398B1 (enExample) 1975-01-10
DE2008397B2 (enExample) 1973-12-06
ES377150A1 (es) 1972-06-01
GB1296096A (enExample) 1972-11-15
DE2008397A1 (de) 1970-09-17
FR2033398A1 (enExample) 1970-12-04
BE746471A (fr) 1970-07-31
IE34031L (en) 1970-08-26
SE362989B (enExample) 1973-12-27
IE34031B1 (en) 1975-01-08

Similar Documents

Publication Publication Date Title
EP0000743B1 (de) Verfahren zum Herstellen von Tantal-Kontakten auf einem aus N-leitendem Silicium bestehenden Halbleitersubstrat
DE1056747C2 (de) Verfahren zur Herstellung von mehreren p-n-UEbergaengen in Halbleiterkoerpern fuer Transistoren durch Diffusion
DE3882398T2 (de) Kontakt auf Galliumarsenid und dessen Herstellungsverfahren.
DE1024640B (de) Verfahren zur Herstellung von Kristalloden
DE2019655C2 (de) Verfahren zur Eindiffundierung eines den Leitungstyp verändernden Aktivators in einen Oberflächenbereich eines Halbleiterkörpers
EP0005185A1 (de) Verfahren zum gleichzeitigen Herstellen von Schottky-Sperrschichtdioden und ohmschen Kontakten nach dotierten Halbleiterzonen
DE1614148B2 (de) Verfahren zum herstellen einer elektrode fuer halbleiter bauelemente
DE1805994A1 (de) Metall-Halbleiterdiode mit hoher Abbruchspannung und geringem Streuverlust,sowie Verfahren zu ihrer Herstellung
DE1130522B (de) Flaechentransistor mit anlegierten Emitter- und Kollektorelektroden und Legierungs-verfahren zu seiner Herstellung
DE4313625C2 (de) Gleichrichterkontakt zwischen einer halbleitenden Diamantschicht und einer amorphen Siliciumschicht und Verfahren zu seiner Herstellung
EP0037005B1 (de) Sperrfreier niederohmiger Kontakt auf III-V-Halbleitermaterial und Verfahren zu seiner Herstellung
DE967322C (de) Halbleitereinrichtung mit einem Basiskoerper aus p- oder n-Halbleitermaterial und Verfahren zu ihrer Herstellung
DE2927003A1 (de) Siliziumwiderstand mit sehr geringem temperaturkoeffizient
DE2517252A1 (de) Halbleiterelement
DE1639262A1 (de) Halbleiterbauelement mit einer Grossflaechen-Elektrode
DE2602705A1 (de) Elektronenroehre mit einer photokathode, photokathode fuer eine solche roehre und verfahren zur herstellung einer derartigen roehre
DE2008397C3 (de) Verfahren zum Herstellen eines Kontaktes auf einem n-leitenden Galliumarsenidsubstrat
DE1806980A1 (de) Halbleiter-Bauelement
DE2130624A1 (de) Verfahren zur Herstellung ultraduenner Halbleiter-Wafer
DE1564170A1 (de) Halbleiterbauelement hoher Schaltgeschwindigkeit und Verfahren zu dessen Herstellung
DE69001016T2 (de) Verfahren zur herstellung von wolfram-antimon ohmischen kontakten mit niedrigem widerstand auf iii-iv halbleitermaterialien.
DE3041818A1 (de) Halbleiterbauelement
DE2321390C3 (de) Verfahren zur Herstellung einer Halbleitervorrichtung
DE3044958C2 (de) Verfahren zur Bildung eines SiO ↓2↓ enthaltenden isolierenden Films auf einem GaAs-Halbleitersubstrat und Verwendung des Verfahrens
DE1959624C (de) Verfahren zur Herstellung von heteroepitaktischen Tunneldioden

Legal Events

Date Code Title Description
SH Request for examination between 03.10.1968 and 22.04.1971
C3 Grant after two publication steps (3rd publication)