DE2002133A1 - Informationsspeicher,der beim Auslesen eine elektrische Ausgangsgroesse abgibt - Google Patents
Informationsspeicher,der beim Auslesen eine elektrische Ausgangsgroesse abgibtInfo
- Publication number
- DE2002133A1 DE2002133A1 DE19702002133 DE2002133A DE2002133A1 DE 2002133 A1 DE2002133 A1 DE 2002133A1 DE 19702002133 DE19702002133 DE 19702002133 DE 2002133 A DE2002133 A DE 2002133A DE 2002133 A1 DE2002133 A1 DE 2002133A1
- Authority
- DE
- Germany
- Prior art keywords
- capacitor
- semiconductor
- electrically conductive
- cis
- conductive plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 230000015654 memory Effects 0.000 title description 21
- 239000004065 semiconductor Substances 0.000 claims description 122
- 239000003990 capacitor Substances 0.000 claims description 107
- 239000000969 carrier Substances 0.000 claims description 41
- 239000000758 substrate Substances 0.000 claims description 34
- 238000009413 insulation Methods 0.000 claims description 27
- 239000004020 conductor Substances 0.000 claims description 15
- 230000005670 electromagnetic radiation Effects 0.000 claims description 15
- 230000000694 effects Effects 0.000 claims description 6
- 230000005855 radiation Effects 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 59
- 238000003860 storage Methods 0.000 description 26
- 239000011159 matrix material Substances 0.000 description 16
- 239000000463 material Substances 0.000 description 14
- 230000008859 change Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 230000005669 field effect Effects 0.000 description 4
- 230000004907 flux Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/62—Capacitors having potential barriers
- H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
- H10B99/16—Subject matter not provided for in other groups of this subclass comprising memory cells having diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
- H10F30/2823—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors the devices being conductor-insulator-semiconductor devices, e.g. diodes or charge-coupled devices [CCD]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Read Only Memory (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US79256969A | 1969-01-21 | 1969-01-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2002133A1 true DE2002133A1 (de) | 1970-07-23 |
Family
ID=25157354
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19702002133 Withdrawn DE2002133A1 (de) | 1969-01-21 | 1970-01-19 | Informationsspeicher,der beim Auslesen eine elektrische Ausgangsgroesse abgibt |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS5139058B1 (enExample) |
| DE (1) | DE2002133A1 (enExample) |
| FR (1) | FR2028816B1 (enExample) |
| GB (2) | GB1305803A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2331093A1 (de) * | 1972-06-21 | 1974-01-17 | Gen Electric | Verfahren und vorrichtung zum abtasten von strahlung und zur lieferung einer elektrischen ausgabe |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63123675A (ja) * | 1986-11-10 | 1988-05-27 | 株式会社 小山鉄工所 | ペンチ，ニツパ−などの工具用握柄 |
-
1970
- 1970-01-19 DE DE19702002133 patent/DE2002133A1/de not_active Withdrawn
- 1970-01-21 JP JP534070A patent/JPS5139058B1/ja active Pending
- 1970-01-21 FR FR7002112A patent/FR2028816B1/fr not_active Expired
- 1970-01-21 GB GB4408872A patent/GB1305803A/en not_active Expired
- 1970-01-21 GB GB146170A patent/GB1305802A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2331093A1 (de) * | 1972-06-21 | 1974-01-17 | Gen Electric | Verfahren und vorrichtung zum abtasten von strahlung und zur lieferung einer elektrischen ausgabe |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2028816A1 (enExample) | 1970-10-16 |
| GB1305802A (enExample) | 1973-02-07 |
| GB1305803A (enExample) | 1973-02-07 |
| FR2028816B1 (enExample) | 1973-12-21 |
| JPS5139058B1 (enExample) | 1976-10-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8120 | Willingness to grant licences paragraph 23 | ||
| 8130 | Withdrawal |