DE19982734T1 - EEPROM-Zelle mit Tunnelung quer über gesamte separate Kanäle - Google Patents

EEPROM-Zelle mit Tunnelung quer über gesamte separate Kanäle

Info

Publication number
DE19982734T1
DE19982734T1 DE19982734T DE19982734T DE19982734T1 DE 19982734 T1 DE19982734 T1 DE 19982734T1 DE 19982734 T DE19982734 T DE 19982734T DE 19982734 T DE19982734 T DE 19982734T DE 19982734 T1 DE19982734 T1 DE 19982734T1
Authority
DE
Germany
Prior art keywords
tunneling
separate channels
eeprom cell
entire separate
entire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19982734T
Other languages
English (en)
Inventor
Xiao-Yu Li
Steven Fong
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lattice Semiconductor Corp
Original Assignee
Lattice Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lattice Semiconductor Corp filed Critical Lattice Semiconductor Corp
Publication of DE19982734T1 publication Critical patent/DE19982734T1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0441—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/60—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the control gate being a doped region, e.g. single-poly memory cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
DE19982734T 1998-12-01 1999-11-30 EEPROM-Zelle mit Tunnelung quer über gesamte separate Kanäle Withdrawn DE19982734T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/203,149 US6404006B2 (en) 1998-12-01 1998-12-01 EEPROM cell with tunneling across entire separated channels
PCT/US1999/028344 WO2000033384A1 (en) 1998-12-01 1999-11-30 Eeprom cell with tunneling across entire separated channels

Publications (1)

Publication Number Publication Date
DE19982734T1 true DE19982734T1 (de) 2001-04-26

Family

ID=22752718

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19982734T Withdrawn DE19982734T1 (de) 1998-12-01 1999-11-30 EEPROM-Zelle mit Tunnelung quer über gesamte separate Kanäle

Country Status (5)

Country Link
US (1) US6404006B2 (de)
AU (1) AU1837300A (de)
DE (1) DE19982734T1 (de)
GB (1) GB2349275A (de)
WO (1) WO2000033384A1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005353984A (ja) * 2004-06-14 2005-12-22 Seiko Epson Corp 不揮発性記憶装置
TWI266417B (en) * 2004-11-09 2006-11-11 Powerchip Semiconductor Corp One-time programmable read only memory and operating method thereof
US8207580B2 (en) * 2009-05-29 2012-06-26 Power Integrations, Inc. Power integrated circuit device with incorporated sense FET
KR101585970B1 (ko) * 2009-06-26 2016-01-18 주식회사 동부하이텍 비휘발성 메모리 소자의 제조 방법
US8947938B2 (en) * 2012-09-21 2015-02-03 Taiwan Semiconductor Manufacturing Company, Ltd. Two-transistor non-volatile memory cell and related program and read methods
US9450052B1 (en) * 2015-07-01 2016-09-20 Chengdu Monolithic Power Systems Co., Ltd. EEPROM memory cell with a coupler region and method of making the same

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4037242A (en) 1975-12-29 1977-07-19 Texas Instruments Incorporated Dual injector, floating gate MOS electrically alterable, non-volatile semiconductor memory device
US4715014A (en) 1985-10-29 1987-12-22 Texas Instruments Incorporated Modified three transistor EEPROM cell
US4924278A (en) 1987-06-19 1990-05-08 Advanced Micro Devices, Inc. EEPROM using a merged source and control gate
JP2688492B2 (ja) 1987-06-19 1997-12-10 アドバンスト・マイクロ・デバイシズ・インコーポレイテッド 電気的消去可能プログラマブルリードオンリメモリ
EP0493640B1 (de) 1990-12-31 1995-04-19 STMicroelectronics S.r.l. EEPROM-Zelle mit einschichtigem Metallgate und mit einem Lese-Interface des externen Schaltkreises, welches isoliert ist vom Schreib/Lösch-Interface des Programmierungsschaltkreises
US5640346A (en) 1992-03-03 1997-06-17 Harris Corporation Electrically programmable memory cell
JPH08506693A (ja) 1992-06-19 1996-07-16 ラティス・セミコンダクター・コーポレイション 単層の多結晶シリコン層を有するフラッシュｅ▲上２▼ｐｒｏｍセル
WO1994014196A1 (en) 1992-12-08 1994-06-23 National Semiconductor Corporation High density contactless flash eprom array using channel erase
US5440159A (en) 1993-09-20 1995-08-08 Atmel Corporation Single layer polysilicon EEPROM having uniform thickness gate oxide/capacitor dielectric layer
US5504706A (en) 1993-10-12 1996-04-02 Texas Instruments Incorporated Low voltage Fowler-Nordheim flash EEPROM memory array utilizing single level poly cells
US5457652A (en) 1994-04-01 1995-10-10 National Semiconductor Corporation Low voltage EEPROM
US5487033A (en) 1994-06-28 1996-01-23 Intel Corporation Structure and method for low current programming of flash EEPROMS
US5587603A (en) 1995-01-06 1996-12-24 Actel Corporation Two-transistor zero-power electrically-alterable non-volatile latch
US5491657A (en) 1995-02-24 1996-02-13 Advanced Micro Devices, Inc. Method for bulk (or byte) charging and discharging an array of flash EEPROM memory cells
US5596524A (en) 1995-04-21 1997-01-21 Advanced Micro Devices, Inc. CMOS memory cell with gate oxide of both NMOS and PMOS transistors as tunneling window for program and erase
US5742542A (en) 1995-07-03 1998-04-21 Advanced Micro Devices, Inc. Non-volatile memory cells using only positive charge to store data
US5615150A (en) 1995-11-02 1997-03-25 Advanced Micro Devices, Inc. Control gate-addressed CMOS non-volatile cell that programs through gates of CMOS transistors
US5587945A (en) * 1995-11-06 1996-12-24 Advanced Micro Devices, Inc. CMOS EEPROM cell with tunneling window in the read path
DE69610062T2 (de) 1995-11-21 2001-05-03 Programmable Microelectronics Nichtflüchtige PMOS-Speicheranordnung mit einer einzigen Polysiliziumschicht
US5646901A (en) 1996-03-26 1997-07-08 Advanced Micro Devices, Inc. CMOS memory cell with tunneling during program and erase through the NMOS and PMOS transistors and a pass gate separating the NMOS and PMOS transistors
US5942780A (en) 1996-08-09 1999-08-24 Advanced Micro Devices, Inc. Integrated circuit having, and process providing, different oxide layer thicknesses on a substrate
US5761116A (en) * 1996-10-07 1998-06-02 Advanced Micro Devices, Inc. Vpp only scalable EEPROM memory cell having transistors with thin tunnel gate oxide
WO1998019343A1 (en) 1996-10-28 1998-05-07 Macronix International Co., Ltd. Memory redundancy circuit using single polysilicon floating gate transistors as redundancy elements
JPH10223782A (ja) 1997-02-06 1998-08-21 Toshiba Corp 不揮発性半導体記憶装置およびその製造方法
US5896315A (en) 1997-04-11 1999-04-20 Programmable Silicon Solutions Nonvolatile memory
US5854114A (en) * 1997-10-09 1998-12-29 Advanced Micro Devices, Inc. Data retention of EEPROM cell with shallow trench isolation using thicker liner oxide
US5969992A (en) * 1998-12-21 1999-10-19 Vantis Corporation EEPROM cell using P-well for tunneling across a channel
US6294810B1 (en) * 1998-12-22 2001-09-25 Vantis Corporation EEPROM cell with tunneling at separate edge and channel regions
US5999449A (en) 1999-01-27 1999-12-07 Vantis Corporation Two transistor EEPROM cell using P-well for tunneling across a channel
US6274898B1 (en) * 1999-05-21 2001-08-14 Vantis Corporation Triple-well EEPROM cell using P-well for tunneling across a channel

Also Published As

Publication number Publication date
US6404006B2 (en) 2002-06-11
AU1837300A (en) 2000-06-19
GB0018144D0 (en) 2000-09-13
GB2349275A (en) 2000-10-25
WO2000033384A1 (en) 2000-06-08
US20010030343A1 (en) 2001-10-18

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Legal Events

Date Code Title Description
8139 Disposal/non-payment of the annual fee