DE19882366T1 - Solarzelle und Verfahren zu ihrer Herstellung - Google Patents

Solarzelle und Verfahren zu ihrer Herstellung

Info

Publication number
DE19882366T1
DE19882366T1 DE19882366T DE19882366T DE19882366T1 DE 19882366 T1 DE19882366 T1 DE 19882366T1 DE 19882366 T DE19882366 T DE 19882366T DE 19882366 T DE19882366 T DE 19882366T DE 19882366 T1 DE19882366 T1 DE 19882366T1
Authority
DE
Germany
Prior art keywords
manufacture
solar cell
solar
cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19882366T
Other languages
English (en)
Inventor
Hidenobu Nakazawa
Takayuki Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Asahi Kasei Corp
Original Assignee
Asahi Chemical Industry Co Ltd
Asahi Kasei Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Chemical Industry Co Ltd, Asahi Kasei Kogyo KK filed Critical Asahi Chemical Industry Co Ltd
Publication of DE19882366T1 publication Critical patent/DE19882366T1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03926—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
    • H01L31/03928—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate including AIBIIICVI compound, e.g. CIS, CIGS deposited on metal or polymer foils
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Sustainable Energy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
DE19882366T 1997-05-07 1998-04-30 Solarzelle und Verfahren zu ihrer Herstellung Withdrawn DE19882366T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP11691897 1997-05-07
JP7234798 1998-03-20
PCT/JP1998/001994 WO1998050962A1 (fr) 1997-05-07 1998-04-30 Cellule solaire et procede de fabrication

Publications (1)

Publication Number Publication Date
DE19882366T1 true DE19882366T1 (de) 2000-05-25

Family

ID=26413482

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19882366T Withdrawn DE19882366T1 (de) 1997-05-07 1998-04-30 Solarzelle und Verfahren zu ihrer Herstellung

Country Status (4)

Country Link
US (1) US6274805B1 (de)
AU (1) AU7083398A (de)
DE (1) DE19882366T1 (de)
WO (1) WO1998050962A1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10259472B4 (de) * 2002-12-19 2006-04-20 Solarion Gmbh Flexible Dünnschichtsolarzelle mit flexibler Schutzschicht

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6881623B2 (en) * 2001-08-29 2005-04-19 Micron Technology, Inc. Method of forming chalcogenide comprising devices, method of forming a programmable memory cell of memory circuitry, and a chalcogenide comprising device
JP4695850B2 (ja) * 2004-04-28 2011-06-08 本田技研工業株式会社 カルコパイライト型太陽電池
EP1684362A3 (de) * 2004-12-02 2006-08-02 Technische Universiteit Delft Verfahren zur Herstellung dünner Schichten, vorzugsweise für Solarzellen
US7176543B2 (en) * 2005-01-26 2007-02-13 United Solar Ovonic Corp. Method of eliminating curl for devices on thin flexible substrates, and devices made thereby
JP4681352B2 (ja) * 2005-05-24 2011-05-11 本田技研工業株式会社 カルコパイライト型太陽電池
FR2886460B1 (fr) * 2005-05-25 2007-08-24 Electricite De France Sulfurisation et selenisation de couches de cigs electrodepose par recuit thermique
JP4646724B2 (ja) * 2005-07-27 2011-03-09 本田技研工業株式会社 カルコパイライト型太陽電池
KR100810730B1 (ko) * 2006-06-19 2008-03-07 (주)인솔라텍 태양전지용 광흡수층의 제조방법
WO2009046178A1 (en) * 2007-10-02 2009-04-09 University Of Delaware I-iii-vi2 photovoltaic absorber layers
FR2922046B1 (fr) * 2007-10-05 2011-06-24 Saint Gobain Perfectionnements apportes a des elements capables de collecter de la lumiere
KR101062016B1 (ko) 2007-12-14 2011-09-05 주식회사 엘지화학 １ｂ-３ａ-６ａ족 화합물 코팅층의 제조방법
JP5278160B2 (ja) 2008-05-20 2013-09-04 宇部興産株式会社 芳香族ポリイミドフィルム、積層体および太陽電池
CN102089366B (zh) 2008-05-20 2013-06-19 宇部兴产株式会社 聚酰亚胺-金属层压制品和太阳电池
JP5515414B2 (ja) * 2008-05-20 2014-06-11 宇部興産株式会社 ポリイミド金属積層体および太陽電池
JP5481929B2 (ja) * 2008-05-20 2014-04-23 宇部興産株式会社 ポリイミド金属積層体および太陽電池
GB0915687D0 (en) 2009-09-08 2009-10-07 Dupont Teijin Films Us Ltd Polyester films
TW201129650A (en) * 2009-10-01 2011-09-01 First Solar Inc Self-remediating photovoltaic module
WO2011041567A1 (en) * 2009-10-01 2011-04-07 First Solar, Inc. Self-remediating photovoltaic module
WO2011041561A1 (en) * 2009-10-01 2011-04-07 First Solar, Inc. Self-remediating photovoltaic module
WO2011041558A1 (en) * 2009-10-01 2011-04-07 First Solar, Inc. Self-remediating photovoltaic module
EP2502955A4 (de) 2009-11-20 2013-05-01 Ube Industries Aromatischer polyimidfilm, laminat daraus und solarzelle damit
GB2488787A (en) * 2011-03-07 2012-09-12 Dupont Teijin Films Us Ltd Stabilised polyester films
KR101493926B1 (ko) * 2013-03-04 2015-02-16 엘에스엠트론 주식회사 박막형 태양전지
GB201310837D0 (en) 2013-06-18 2013-07-31 Dupont Teijin Films Us Ltd Polyester film -IV
GB201317551D0 (en) 2013-10-03 2013-11-20 Dupont Teijin Films Us Ltd Co-extruded polyester films

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2838141B2 (ja) 1988-06-08 1998-12-16 旭化成工業株式会社 太陽電池
JPH05259494A (ja) 1992-03-16 1993-10-08 Fuji Electric Co Ltd フレキシブル型太陽電池の製造方法
JP2686022B2 (ja) * 1992-07-01 1997-12-08 キヤノン株式会社 光起電力素子の製造方法
JP3078933B2 (ja) * 1992-12-28 2000-08-21 キヤノン株式会社 光起電力装置
JPH06214936A (ja) 1993-01-13 1994-08-05 Oki Electric Ind Co Ltd 入出力装置自動判別方法
JP3267452B2 (ja) 1993-08-31 2002-03-18 キヤノン株式会社 光電変換装置及び太陽電池モジュール
JPH07302926A (ja) 1994-04-30 1995-11-14 Canon Inc 太陽電池モジュール
DE69527148T2 (de) 1994-08-19 2003-02-20 Asahi Chemical Ind Aromatische polyamidfolie, verfahren zu ihrer herstellung und daraus hergestellte magnetische aufzeichnungsmittel und solarzelle

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10259472B4 (de) * 2002-12-19 2006-04-20 Solarion Gmbh Flexible Dünnschichtsolarzelle mit flexibler Schutzschicht

Also Published As

Publication number Publication date
US6274805B1 (en) 2001-08-14
WO1998050962A1 (fr) 1998-11-12
AU7083398A (en) 1998-11-27

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8127 New person/name/address of the applicant

Owner name: ASAHI KASEI K.K., OSAKA, JP

8139 Disposal/non-payment of the annual fee