DE19823826A1 - MRAM-Speicher sowie Verfahren zum Lesen/Schreiben digitaler Information in einen derartigen Speicher - Google Patents
MRAM-Speicher sowie Verfahren zum Lesen/Schreiben digitaler Information in einen derartigen SpeicherInfo
- Publication number
- DE19823826A1 DE19823826A1 DE19823826A DE19823826A DE19823826A1 DE 19823826 A1 DE19823826 A1 DE 19823826A1 DE 19823826 A DE19823826 A DE 19823826A DE 19823826 A DE19823826 A DE 19823826A DE 19823826 A1 DE19823826 A1 DE 19823826A1
- Authority
- DE
- Germany
- Prior art keywords
- memory cell
- magnetization
- current
- magnetic
- digital
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1693—Timing circuits or methods
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19823826A DE19823826A1 (de) | 1998-05-28 | 1998-05-28 | MRAM-Speicher sowie Verfahren zum Lesen/Schreiben digitaler Information in einen derartigen Speicher |
US09/701,521 US6674662B1 (en) | 1998-05-28 | 1999-05-27 | Magnetoresistive random access memory and method for reading/writing digital information to such a memory |
AU45015/99A AU4501599A (en) | 1998-05-28 | 1999-05-27 | Magnetoresistive random access memory and method for reading/writing digital information to such a memory |
EP99927776A EP1082725B1 (de) | 1998-05-28 | 1999-05-27 | Mram-speicher sowie verfahren zum lesen/schreiben digitaler information in einen derartigen speicher |
JP2000551392A JP2002517083A (ja) | 1998-05-28 | 1999-05-27 | Mramメモリ装置およびこのようなメモリ装置におけるデジタル情報の読取/書込方法 |
DE59902950T DE59902950D1 (de) | 1998-05-28 | 1999-05-27 | Mram-speicher sowie verfahren zum lesen/schreiben digitaler information in einen derartigen speicher |
PCT/EP1999/003668 WO1999062069A1 (de) | 1998-05-28 | 1999-05-27 | Mram-speicher sowie verfahren zum lesen/schreiben digitaler information in einen derartigen speicher |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19823826A DE19823826A1 (de) | 1998-05-28 | 1998-05-28 | MRAM-Speicher sowie Verfahren zum Lesen/Schreiben digitaler Information in einen derartigen Speicher |
Publications (1)
Publication Number | Publication Date |
---|---|
DE19823826A1 true DE19823826A1 (de) | 1999-12-02 |
Family
ID=7869156
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19823826A Withdrawn DE19823826A1 (de) | 1998-05-28 | 1998-05-28 | MRAM-Speicher sowie Verfahren zum Lesen/Schreiben digitaler Information in einen derartigen Speicher |
DE59902950T Expired - Lifetime DE59902950D1 (de) | 1998-05-28 | 1999-05-27 | Mram-speicher sowie verfahren zum lesen/schreiben digitaler information in einen derartigen speicher |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE59902950T Expired - Lifetime DE59902950D1 (de) | 1998-05-28 | 1999-05-27 | Mram-speicher sowie verfahren zum lesen/schreiben digitaler information in einen derartigen speicher |
Country Status (6)
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10107380C1 (de) * | 2001-02-16 | 2002-07-25 | Infineon Technologies Ag | Verfahren zum Beschreiben magnetoresistiver Speicherzellen und mit diesem Verfahren beschreibbarer magnetoresistiver Speicher |
US7532506B2 (en) | 2007-09-17 | 2009-05-12 | Qimonda Ag | Integrated circuit, cell arrangement, method of operating an integrated circuit, memory module |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6236590B1 (en) * | 2000-07-21 | 2001-05-22 | Hewlett-Packard Company | Optimal write conductors layout for improved performance in MRAM |
US6545906B1 (en) * | 2001-10-16 | 2003-04-08 | Motorola, Inc. | Method of writing to scalable magnetoresistance random access memory element |
US6879512B2 (en) | 2002-05-24 | 2005-04-12 | International Business Machines Corporation | Nonvolatile memory device utilizing spin-valve-type designs and current pulses |
US6633498B1 (en) * | 2002-06-18 | 2003-10-14 | Motorola, Inc. | Magnetoresistive random access memory with reduced switching field |
US7095646B2 (en) * | 2002-07-17 | 2006-08-22 | Freescale Semiconductor, Inc. | Multi-state magnetoresistance random access cell with improved memory storage density |
US6956763B2 (en) * | 2003-06-27 | 2005-10-18 | Freescale Semiconductor, Inc. | MRAM element and methods for writing the MRAM element |
US6967366B2 (en) * | 2003-08-25 | 2005-11-22 | Freescale Semiconductor, Inc. | Magnetoresistive random access memory with reduced switching field variation |
WO2005038812A1 (ja) * | 2003-09-16 | 2005-04-28 | Nec Corporation | 半導体記憶装置及び半導体記憶装置のデータ書き込み方法 |
US7502248B2 (en) * | 2004-05-21 | 2009-03-10 | Samsung Electronics Co., Ltd. | Multi-bit magnetic random access memory device |
US20070279971A1 (en) * | 2004-06-04 | 2007-12-06 | Micron Technology, Inc. | Modified pseudo-spin valve (psv) for memory applications |
US7129098B2 (en) * | 2004-11-24 | 2006-10-31 | Freescale Semiconductor, Inc. | Reduced power magnetoresistive random access memory elements |
EP1684305B1 (en) | 2005-01-14 | 2011-05-11 | Bundesrepublik Deutschland, vertr. durch das Bundesministerium f. Wirtschaft und Technologie, | Magnetic memory device and method of magnetization reversal of the magnetization of at least one magnetic memory element |
US7593184B2 (en) * | 2005-10-24 | 2009-09-22 | Seagate Technology Llc | Rotating write field generated by circulating domain walls in a magnetic ring: a DC-driven high-frequency oscillator |
GB2436893A (en) * | 2006-03-31 | 2007-10-10 | Seiko Epson Corp | Inkjet printing of cross point passive matrix devices |
US20090027948A1 (en) * | 2007-07-24 | 2009-01-29 | Manfred Ruehrig | Integrated Circuits, Method of Programming a Cell, Thermal Select Magnetoresistive Element, Memory Module |
FR2930385B1 (fr) * | 2008-04-16 | 2011-10-14 | Commissariat Energie Atomique | Disositif magnetique pour la realisation d'une "fonction logique". |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5276639A (en) * | 1990-04-18 | 1994-01-04 | Nec Corporation | Superconductor magnetic memory cell and method for accessing the same |
US5448515A (en) * | 1992-09-02 | 1995-09-05 | Mitsubishi Denki Kabushiki Kaisha | Magnetic thin film memory and recording/reproduction method therefor |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3184352B2 (ja) | 1993-02-18 | 2001-07-09 | 松下電器産業株式会社 | メモリー素子 |
US5343422A (en) | 1993-02-23 | 1994-08-30 | International Business Machines Corporation | Nonvolatile magnetoresistive storage device using spin valve effect |
US5477482A (en) | 1993-10-01 | 1995-12-19 | The United States Of America As Represented By The Secretary Of The Navy | Ultra high density, non-volatile ferromagnetic random access memory |
US5587943A (en) | 1995-02-13 | 1996-12-24 | Integrated Microtransducer Electronics Corporation | Nonvolatile magnetoresistive memory with fully closed flux operation |
JP3207094B2 (ja) | 1995-08-21 | 2001-09-10 | 松下電器産業株式会社 | 磁気抵抗効果素子及びメモリー素子 |
DE19534856A1 (de) | 1995-09-20 | 1997-03-27 | Forschungszentrum Juelich Gmbh | Digitale Speichereinrichtung für Lese- und Schreiboperationen sowie ein Verfahren zu deren Herstellung |
US5650958A (en) | 1996-03-18 | 1997-07-22 | International Business Machines Corporation | Magnetic tunnel junctions with controlled magnetic response |
US5703805A (en) | 1996-05-08 | 1997-12-30 | Motorola | Method for detecting information stored in a MRAM cell having two magnetic layers in different thicknesses |
US5734605A (en) * | 1996-09-10 | 1998-03-31 | Motorola, Inc. | Multi-layer magnetic tunneling junction memory cells |
US5768181A (en) * | 1997-04-07 | 1998-06-16 | Motorola, Inc. | Magnetic device having multi-layer with insulating and conductive layers |
US6577529B1 (en) * | 2002-09-03 | 2003-06-10 | Hewlett-Packard Development Company, L.P. | Multi-bit magnetic memory device |
-
1998
- 1998-05-28 DE DE19823826A patent/DE19823826A1/de not_active Withdrawn
-
1999
- 1999-05-27 AU AU45015/99A patent/AU4501599A/en not_active Abandoned
- 1999-05-27 US US09/701,521 patent/US6674662B1/en not_active Expired - Fee Related
- 1999-05-27 JP JP2000551392A patent/JP2002517083A/ja not_active Withdrawn
- 1999-05-27 DE DE59902950T patent/DE59902950D1/de not_active Expired - Lifetime
- 1999-05-27 WO PCT/EP1999/003668 patent/WO1999062069A1/de active IP Right Grant
- 1999-05-27 EP EP99927776A patent/EP1082725B1/de not_active Expired - Lifetime
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5276639A (en) * | 1990-04-18 | 1994-01-04 | Nec Corporation | Superconductor magnetic memory cell and method for accessing the same |
US5448515A (en) * | 1992-09-02 | 1995-09-05 | Mitsubishi Denki Kabushiki Kaisha | Magnetic thin film memory and recording/reproduction method therefor |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10107380C1 (de) * | 2001-02-16 | 2002-07-25 | Infineon Technologies Ag | Verfahren zum Beschreiben magnetoresistiver Speicherzellen und mit diesem Verfahren beschreibbarer magnetoresistiver Speicher |
US7408803B2 (en) | 2001-02-16 | 2008-08-05 | Infineon Technologies Ag | Method for writing to magnetoresistive memory cells and magnetoresistive memory which can be written to by the method |
US7532506B2 (en) | 2007-09-17 | 2009-05-12 | Qimonda Ag | Integrated circuit, cell arrangement, method of operating an integrated circuit, memory module |
Also Published As
Publication number | Publication date |
---|---|
EP1082725B1 (de) | 2002-10-02 |
EP1082725A1 (de) | 2001-03-14 |
DE59902950D1 (de) | 2002-11-07 |
US6674662B1 (en) | 2004-01-06 |
AU4501599A (en) | 1999-12-13 |
WO1999062069A1 (de) | 1999-12-02 |
JP2002517083A (ja) | 2002-06-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
OP8 | Request for examination as to paragraph 44 patent law | ||
8139 | Disposal/non-payment of the annual fee |