DE19781487D2 - Röntgendetektor mit direkter Quantenwandlung - Google Patents

Röntgendetektor mit direkter Quantenwandlung

Info

Publication number
DE19781487D2
DE19781487D2 DE19781487T DE19781487T DE19781487D2 DE 19781487 D2 DE19781487 D2 DE 19781487D2 DE 19781487 T DE19781487 T DE 19781487T DE 19781487 T DE19781487 T DE 19781487T DE 19781487 D2 DE19781487 D2 DE 19781487D2
Authority
DE
Germany
Prior art keywords
ray detector
quantum conversion
direct quantum
direct
conversion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE19781487T
Other languages
English (en)
Inventor
Martin Hoheisel
Herbert Dittrich
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DE19781487T priority Critical patent/DE19781487D2/de
Application granted granted Critical
Publication of DE19781487D2 publication Critical patent/DE19781487D2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0324—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIVBVI or AIIBIVCVI chalcogenide compounds, e.g. Pb Sn Te
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
DE19781487T 1996-12-20 1997-12-19 Röntgendetektor mit direkter Quantenwandlung Expired - Lifetime DE19781487D2 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE19781487T DE19781487D2 (de) 1996-12-20 1997-12-19 Röntgendetektor mit direkter Quantenwandlung

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19653534 1996-12-20
PCT/DE1997/002967 WO1998028800A1 (de) 1996-12-20 1997-12-19 Röntgendetektor mit direkter quantenwandlung
DE19781487T DE19781487D2 (de) 1996-12-20 1997-12-19 Röntgendetektor mit direkter Quantenwandlung

Publications (1)

Publication Number Publication Date
DE19781487D2 true DE19781487D2 (de) 1999-11-25

Family

ID=7815689

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19781487T Expired - Lifetime DE19781487D2 (de) 1996-12-20 1997-12-19 Röntgendetektor mit direkter Quantenwandlung

Country Status (2)

Country Link
DE (1) DE19781487D2 (de)
WO (1) WO1998028800A1 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007042451A1 (de) * 2007-09-06 2009-03-12 Biotronik Vi Patent Ag Stent mit einem Grundkörper aus einer biokorrodierbaren Legierung
CN101728450B (zh) * 2009-11-18 2011-11-02 中国科学院上海技术物理研究所 高占空比碲镉汞长波红外光电导面阵探测器

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5262649A (en) * 1989-09-06 1993-11-16 The Regents Of The University Of Michigan Thin-film, flat panel, pixelated detector array for real-time digital imaging and dosimetry of ionizing radiation
US5017989A (en) * 1989-12-06 1991-05-21 Xerox Corporation Solid state radiation sensor array panel
US5510644A (en) * 1992-03-23 1996-04-23 Martin Marietta Corporation CDTE x-ray detector for use at room temperature

Also Published As

Publication number Publication date
WO1998028800A1 (de) 1998-07-02

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Legal Events

Date Code Title Description
8141 Disposal/no request for examination