DE1955716A1 - Deposition of metal contact layers for - beam lead mfd semiconductors - Google Patents
Deposition of metal contact layers for - beam lead mfd semiconductorsInfo
- Publication number
- DE1955716A1 DE1955716A1 DE19691955716 DE1955716A DE1955716A1 DE 1955716 A1 DE1955716 A1 DE 1955716A1 DE 19691955716 DE19691955716 DE 19691955716 DE 1955716 A DE1955716 A DE 1955716A DE 1955716 A1 DE1955716 A1 DE 1955716A1
- Authority
- DE
- Germany
- Prior art keywords
- layer
- titanium
- nitride
- metal
- deposited
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
- C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5806—Thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
Description
Verfahren zum Herstellen gut-haftender Metallkon-taktschichten, insbesondere für Halbleiterbauelemente, in Beam-Teadr'jechnik -Die Erfindung betrifft ein Verfahren zum Herstellen von guthaftenden Metallkontaktschichten auf insbesondere aus isolierendem Material bestehenden Substraten für vorzugsweise nach der Eearn-ead-Technik gefertigte Halbleiterbauelemente.Process for producing well-adhering metal contact layers, in particular for semiconductor components, in Beam-Teadr'jechnik -The invention relates to a method for the production of well-adhering metal contact layers on, in particular, from insulating Material existing substrates for preferably manufactured according to the Eearn-ead technique Semiconductor components.
Die Aufgabe, die der vorliegenden Erfindung zugrundeliegt, besteht darin, die Haftung dünner Metalifilme auf ihren Substraten zu verbessern. Die Haftung ist abhängig sowohl von den verwendeten Materialien (Metallfilm und Substrat) als auch von der Art der Aufbringung. Bs ist bekannt, sogenannte Haftvermittler als Zwischenschichten zu verwenden jj wenn Metall schichten mit schlechtem Haftvermögen aufgebracht werden sollen. Ein solches Beispiel gibt die Abscheidung von Gold auf einem SiO2-Substrat, bei dem als Haftzwischenschicht Molybdän oder Chrom aufgebracht wird (siehe auch Aufsatz von Cunningham in Solid State Electronics, Vol. 8, Sept. 1965).The object on which the present invention is based exists in improving the adhesion of thin metal films to their substrates. Liability depends on the materials used (metal film and substrate) as well as also on the type of application. Bs is known as so-called adhesion promoters Use intermediate layers jj if metal layers with poor adhesion should be applied. One such example gives up the deposition of gold an SiO2 substrate with molybdenum or chromium applied as an intermediate adhesive layer (see also article by Cunningham in Solid State Electronics, Vol. 8, Sept. 1965).
Die Erfindung geht von der Überlegung aus, daß man, um eine gute Haftung zu erhalten, stets eine chemische Verbindung zwischen Substrat und Metallschicht herbeiführen muß. Das bedeutet, daß ein Material für die Metallschicht zu wählen ist, welches eine hohe chemische Affinität zum Substrat besitzt, oder aber man muß eine die haftung vermittelnde Zwischenschieht aufbringen, welche einerseits eine hohe chemische Affinität zum Substrat und andererseits zur Metallschicht aufweist.The invention is based on the idea that in order to achieve good adhesion To obtain, there is always a chemical bond between the substrate and the metal layer must bring about. That means choosing a material for the metal layer is, which has a high chemical affinity for the substrate, or one must apply an intermediate layer that provides adhesion, which on the one hand has a has high chemical affinity for the substrate and on the other hand for the metal layer.
Der letztgenannte Weg wird durch das erfindungsgemäße Verfahren beschritten, welches dadurch gekennzeichnet ist, daß mindestens ein Teil der aufzubringenden Metall schicht unter Mitwirkung reaktiver Gase als Haftzwischenschicht mit hoher chemischer Affinität auf dem Substrat niedergeschlagen wird.The last-mentioned way is followed by the method according to the invention, which is characterized in that at least some of the Metal layer with the help of reactive gases as an adhesive intermediate layer with high chemical affinity is deposited on the substrate.
In einer Weiterbildung des Erfindungsgedankens ist vorgesehen, daß ein erster An-teil der aufzubringenden Metallschicht durch reaktives Zerstäuben erzeugt wird.In a further development of the inventive concept it is provided that a first part of the metal layer to be applied by reactive sputtering is produced.
Es liegt aber ebenso im Rahmen der vorliegenden Erfindung, zunächst einen ersten Anteil der aufzubringenden Metallschicht un-ter normalen Bedingungen niederzuschlagen und anschließend, beispielsweise in einer Glimmen-tladung unter Teilnahme reaktiver Gase, chemisch umzusetzen.But it is also within the scope of the present invention, initially a first portion of the metal layer to be applied under normal conditions knock down and then, for example, in a glowing charge under Participation of reactive gases, to implement chemically.
Gemäß einem Ausführungsbeispiel nach der Lehre der Erfindung wird zum Herstellen einer Titanschicht auf einem aus Siliciurnnitrid bestehenden Substratkörper durch Kathodenzerstäubung der aus Argon bestehenden Gasatmosphäre ein Anteil von 5 % Stickstoff beigemischt, dann die dadurch gebildete Titannitridschicht bis zu einer Schichtstärke von 50 - 100 i auf dem Siliciumnitrid niedergeschlagen und anschließend ohne St;ickstoffanteil in reiner Argonatmosphäre auf der Titannitridechicht reines Titan niedergeschlagen. Zunächst wird dabei die Titan-Kathode bei geschlossener Substratblende sauber gestäubt. Kurz vor Öffnen der Blende gibt man dem Arbeitsgas (Argon) der Kathodenzerstäubungsapparatur c. 5 % Sickstoff zu. Hierdurch tritt ein reaktives Zerstäuben auf, d. h. es wird anstatt einer Titanschicht eine Titannitridschicht auf dem Siliciumnitridsubstrat niedergeschlagen, welche als Haftzwischenschicht dient. Nachdem diese Schicht eine Dicke von 50 - 100 Å erreicht hat, was je nach dem Typ der Zerstäubungsapparatur in 5 - 30 Sekunden erreicht ist, schließt man das Stickstoffdosierventil und geht hierdurch vom Nitridstäuben zum Stäuben des reinen Metalls über.According to an embodiment according to the teaching of the invention for producing a titanium layer on a substrate body made of silicon nitride by sputtering the gas atmosphere consisting of argon a proportion of 5% nitrogen is added, then the titanium nitride layer thus formed up to a layer thickness of 50-100 i deposited on the silicon nitride and then without nitrogen content in a pure argon atmosphere on the titanium nitride layer Titan knocked down. First, the titanium cathode is closed Substrate cover cleanly dusted. The working gas is applied shortly before the aperture is opened (Argon) the sputtering apparatus c. 5% nitrogen too. This occurs reactive sputtering, d. H. a titanium nitride layer is used instead of a titanium layer deposited on the silicon nitride substrate, which acts as an adhesive interlayer serves. After this layer has reached a thickness of 50-100 Å, depending on the the type of nebulizer is reached in 5 - 30 seconds, one closes the nitrogen metering valve and thereby goes from the nitride dust to the dusting of the pure metal over.
Die in der Zeichnung dargestellte Figur zeigt ein System in be eben beschriebenen Schichtenfolge. Dabei ist mit d Sczugszeichen 1 der aus Siliciuinnitrid bestehende Substratkörper, mit 2 die durch reaktives Zerstäuben aufgebrachte Titannitridschicht und mit n die reine Titansciiicht bezeichnet. In gleicher Weise sind alle anderen Systeme, die nach dem Verfahren gemäß der vorliegenden Erfindung hergestellt werden können, aufgebaut.The figure shown in the drawing shows a system in be even sequence of layers described. The numeral 1 with d is that of silicon nitride existing substrate body, with 2 the titanium nitride layer applied by reactive sputtering and with n the pure titanium is not denoted. All others are in the same way Systems made by the method of the present invention can, built up.
Die Haftung von aufgedampftem Titan auf einem SiO2-Substrat wird nach der Lehre der Erfindung dadurch verbessert, daß zunächst im Hochvakuum eine möglichst zusammenhängende dünne Haftschicht aus Titan von ca. 10 - 20 Å aufgedampft wird.The adhesion of vapor-deposited titanium on an SiO2 substrate is Improved the teaching of the invention that initially in a high vacuum as possible coherent thin adhesive layer made of titanium of approx. 10 - 20 Å is vapor-deposited.
Anschließend wird der Aufdampfprozeß gestoppt und durch Einlassen von Sauerstoff der Druck im Rezipienten auf io 1 bis lo 2 Torr erhöht. Dann wird eine Glimmentladung gezündet und zwar so, daß sich das mit der dünnen Titanschicht bedampfte SiO2-Substrat in der Glimmentladung befindet. Hierdurch oxydiert die Schicht je nach Intensität der Glimmentladung und ihrer Dicke durch. Anschließend wird wieder auf Hochvakuum evakuiert und weiterhin das reine Metall aufgedampft.Then the evaporation process is stopped and let in of oxygen, the pressure in the recipient is increased to 10 1 to 10 2 Torr. Then it will be ignited a glow discharge in such a way that the thin titanium layer vaporized SiO2 substrate is located in the glow discharge. This oxidizes the layer depending on the intensity of the glow discharge and its thickness. Then again evacuated to a high vacuum and the pure metal continued to be evaporated.
Es liegt aber auch im Rahmen der vorliegenden Erfindung, neben dein angegebenen Verfahren, die Haftzwischenschicht durch kurzzeitiges Erhitzen der teilweise niedergeschlagenen reinen Metall schicht bei Temperaturen über 500° G zu erzeugen. Bei leicht durchoxydierenden Materialien wie Zirkon genügt ein kurzes Erhitzen im Sauerstoffstrom, um Zirkondioxid zu erzeugen. Beim Herstellen von Platinkontakten auf Siliciumsubstraten genügt ebenfalls ein kurzes Erhitzen auf ca. 500° C, um eine dünnc Platinsilicidhaftschicht zu erhalten.But it is also within the scope of the present invention, next to your specified process, the adhesive intermediate layer by briefly heating the partially deposited pure metal layer to produce at temperatures above 500 ° G. In the case of materials that oxidize easily, such as zirconium, brief heating in the Oxygen flow to create zirconia. When making platinum contacts On silicon substrates, a short heating to approx. 500 ° C is also sufficient to achieve a to obtain a thin platinum silicide adhesive layer.
Bei Verwendung von Oxidsubstraten ist das Erhitzen in sauerstoffhaltiger Atmosphäre, bei Nitridsubstraten in stickstoffhaltiger Atmosphäre besonders vorteilhaft.When using oxide substrates, the heating is more oxygen-containing Atmosphere, particularly advantageous for nitride substrates in a nitrogen-containing atmosphere.
Das Verfahren nach der Lehre der Erfindung ist besonders gut geeignet zur Herstellung von Metallkontaktschichten aus Titan, Zirkon, Platin, Eisen, Aluminium, Tantal oder Chrom auf aus Silicium oder Siliciumoxid oder -nitrid bestehenden Substraten, wie sie in der Beam-lead-Technologie Verwendung finden.The method according to the teaching of the invention is particularly well suited for the production of metal contact layers made of titanium, zirconium, platinum, iron, aluminum, Tantalum or chromium on substrates made of silicon or silicon oxide or nitride, as they are used in beam lead technology.
9 Patentansprüche 1 Figur9 claims 1 figure
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19691955716 DE1955716A1 (en) | 1969-11-05 | 1969-11-05 | Deposition of metal contact layers for - beam lead mfd semiconductors |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19691955716 DE1955716A1 (en) | 1969-11-05 | 1969-11-05 | Deposition of metal contact layers for - beam lead mfd semiconductors |
Publications (1)
Publication Number | Publication Date |
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DE1955716A1 true DE1955716A1 (en) | 1971-05-13 |
Family
ID=5750218
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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DE19691955716 Pending DE1955716A1 (en) | 1969-11-05 | 1969-11-05 | Deposition of metal contact layers for - beam lead mfd semiconductors |
Country Status (1)
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DE (1) | DE1955716A1 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2126887A1 (en) * | 1971-05-29 | 1972-11-30 | Ibm Deutschland | Deposition of magnetizable layers by cathode sputtering |
EP0093971A2 (en) * | 1982-04-28 | 1983-11-16 | Kabushiki Kaisha Toshiba | Semiconductor device having an interstitial transition element layer and method of manufacturing the same |
US5227335A (en) * | 1986-11-10 | 1993-07-13 | At&T Bell Laboratories | Tungsten metallization |
US6007684A (en) * | 1995-06-07 | 1999-12-28 | Applied Materials, Inc. | Process for forming improved titanium-containing barrier layers |
-
1969
- 1969-11-05 DE DE19691955716 patent/DE1955716A1/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2126887A1 (en) * | 1971-05-29 | 1972-11-30 | Ibm Deutschland | Deposition of magnetizable layers by cathode sputtering |
EP0093971A2 (en) * | 1982-04-28 | 1983-11-16 | Kabushiki Kaisha Toshiba | Semiconductor device having an interstitial transition element layer and method of manufacturing the same |
EP0093971A3 (en) * | 1982-04-28 | 1985-01-30 | Kabushiki Kaisha Toshiba | Semiconductor device having an interstitial transition element layer and method of manufacturing the same |
US5227335A (en) * | 1986-11-10 | 1993-07-13 | At&T Bell Laboratories | Tungsten metallization |
US6007684A (en) * | 1995-06-07 | 1999-12-28 | Applied Materials, Inc. | Process for forming improved titanium-containing barrier layers |
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