DE1865182U - ELECTRIC SEMICONDUCTOR DEVICE. - Google Patents

ELECTRIC SEMICONDUCTOR DEVICE.

Info

Publication number
DE1865182U
DE1865182U DEJ10547U DEJ0010547U DE1865182U DE 1865182 U DE1865182 U DE 1865182U DE J10547 U DEJ10547 U DE J10547U DE J0010547 U DEJ0010547 U DE J0010547U DE 1865182 U DE1865182 U DE 1865182U
Authority
DE
Germany
Prior art keywords
insulating material
semiconductor
semiconductor element
base plate
attached
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DEJ10547U
Other languages
German (de)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Standard Electric Corp
Original Assignee
International Standard Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Standard Electric Corp filed Critical International Standard Electric Corp
Publication of DE1865182U publication Critical patent/DE1865182U/en
Expired legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
    • H01L23/4334—Auxiliary members in encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01072—Hafnium [Hf]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Silicon Compounds (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Description

Bipl,«Ing. Heinz OlaeesenBipl, "Ing. Heinz Olaeesen

PatentanwaltPatent attorney

Stuttgart - 2uf fenhauseaStuttgart - 2uf fenhausea

ISB/Seg, 2595ISB / Seg, 2595

International Standard Electric Qoxp,, lew YorkInternational Standard Electric Qoxp ,, Lew York

ElektrischeElectric

Die feuerung besieht sieh auf elektrische Halbleitervorrichtungen,The firing system shall look look to electrical semiconductor devices,

Ss ist bekannt, bei elektriseheii Halfeleitervoraiialitungea die aktiven feile öea? ?o3?rioJitimg ait aine^ aeiiütiseiüiea Hülle zu •umgebe», 2»B. ate aktive» feile ist eines geeigneten Isoliea?- stoff einzugießen.It is known that the active file öea? ? o3? rioJitimg ait aine ^ aeiiütiseiüiea shell to • surround », 2» B. ate active »file must be cast in a suitable insulating material.

Segenstand der .!Teuerung ist eine robuste und zuverlässige Halbleitervorrichtung der oben genannten Art«The subject of inflation is a robust and reliable semiconductor device of the type mentioned above «

§emäß der feuerung ist das Halbleiterelement der Halbleitervorrichtung auf einer Grundplatte angeordnet und mit einem Isolieretoff ufflhüllt, ü&T in lontakt mit der Grundplatte steht. 3)er Isolierstoff ist formsohlmssig sit der Grundplatte renfbwaß.em.f indem er in hinterschnittene feile der Grundplatte eingreift« !Die Torrichtung hat mindestens eine Zuleitung, welche aus dem Isolierstoff herausragt und in diesem verankert ist*§Emäß the furnace, the semiconductor element of the semiconductor device is disposed on a base plate and with a ufflhüllt Isolieretoff, & T ü in lontakt with the base plate stands. 3) the insulating material is in the form of the base of the base plate renfbwaß.em.f by engaging in the undercut file of the base plate «!

2wei Ausfilhrungsformen der lituerung sollen anhand der figuren nälier beschrieben werden*
202 two forms of the solution are to be described on the basis of the nälier figures *
20th

In ligur 1 ist ein Schnitt durch einen Iieistungsgleichrichter dargestellt» der eine Ausführungsform &qt leuerung darstellt und figur 2 zeigt eine andere Ausfihrungsfons eines Iieistungsgleichrichters gemäS der !feuerung im Schnitt*In Ligur 1 shows a section through a Iieistungsgleichrichter "representing an embodiment & qt leuerung and figure 2 shows another Ausfihrungsfons a Iieistungsgleichrichters acc the! Furnace in section *

♦ )Ι*./η« * 15*5*1962♦) Ι *. / Η «* 15 * 5 * 1962

Bas Halbleiterelement 1 bsi des* Ausfffbaroagefoxm το» figur 1 besteht beispielsweise aus Silicium u&d ist &aofa dem Diffusicms verfahren hergestellt» Is ist awisetoi den Metallstab 2 und die !^teilscheibe 3 eingelötet wa& bildet so das ftrundelemeat eines £leicferie&ters. Min geeignetes Hot gum AnlSten See Halb« leiterelemaotee ist reisee £3.61«Bas semiconductor element 1 bsi of * Ausfffbaroagefoxm το "Figure 1 consists for example of silicon u d is & Aofa» articles made of the Diffusicms Is is awisetoi the metal rod 2 and the! ^ Partially disc-wa soldered 3 thus forms the ftrundelemeat a £ leicferie & ters. Min suitable Hot gum AnlSten See semi-conductor telemaotee is £ 3.61 «

dieses CKLeidbrlccbtereleneat la Ijefeaanter Weiss, ζ »Β* mit einer HEJUKdnmg vom SalpetereEtive tmd flmorwasstrstoffsSure geätat werden Iteaim». stoß der Stab 2 und die Se&etbe 3 entweder aus einem ät£fe#st§&dig€i2i Materialt beispielsweise aus goldplattiertem ftipfer''besteben oder aus eiaem Material wie Silber, welcto.es feeine xtacSitelligea liaflilsse auf dss Halbleiterel^jpseat 1 ausilbti wezm es Blut in der Itafltlssigkeitthis CKLeidbrlccbtereleneat la Ijefeaanter Weiss, ζ »Β * with a HEJUKdnmg from the SalpetereEtive tmd flmorwasstrstoffsSure iteaim». butt the rod 2 and the side 3 either from a material such as gold-plated metal or from a material such as silver, welcto.es feeine xtacSitelligea liaflilsse on the semiconductor element 1 fromilbti wezm es Blood in the liquid

3a<& dem it«en wird eia Sol»it2i£ber<smg 4 au-fgebrao3itf beispielsweiee aüe Silikoa-laöki- der ä*B, geMrtet wird» 33as S-leieltrieiit elemeant ist alaie Terweiaduitg eines HnßBittele« beispielsweise mit eiser legierung toji Blei und Indium, auf ©i»e !r&ebuag 5 mit so3iwalbe23tscii.waaisifSnaig;em Qmerselmitt des EupferfuSes 6 aufgelötet», der auf seiner Unterseite elmn öewindebolssea T trägt, um dea fileiebriohter auf einer ifaterlage befestigen su3a <& dem it «en is eia Sol» it2i £ over <smg 4 au-fgebrao3it f, for example, aüe Silikoa-laöki- der Ä * B, is mrtet »33as S-leieltrieiit element is alaie Terweiaduitg a HnßBittele« for example with ice alloy toji lead and indium, soldered onto © i »e! r & ebuag 5 with so3iwalbe23tscii.waaisifSnaig; em Qmerselmitt des EupferfuSes 6», which has elmn öewindebolssea T on its underside, in order to attach the fileiebriohter to an ifaterlage, see below

J3er A&sohlQB 8 ist aJi dem Stab 2 dureii iagmetoc^iexi bei 9 befestigt« $er IsolierstofflEörper 10». beispielsweise aus iiara mit IiHlstöff* steht i» Eontakt mit der Srruadplatte daß si0& die dargestellte Terbiaduag ergibt uaad umiiüllt IuB 3 und dieJ3er A & sohlQB 8 is attached to the rod 2 dureii iagmetoc ^ iexi at 9 «$ er insulating material body 10». For example, from iiara with IiHlstöff * it stands in contact with the Srruadplatte that si0 & the illustrated terbiaduag results in uaad envelops IuB 3 and the

g fuß 5 mit dem M&tersefraitt©&eii 11 ergibt eine foxsBschlflesige Terbiaduiig mit dem Isolierstoff*·. körper 10-f da der Isolierstoff la den. litet#rsoimitteÄea JCeIl 11g foot 5 with the M & tersefraitt © & eii 11 results in a foxsBschlflesige Terbiaduiig with the insulating material * ·. body 10- f because the insulating material is loaded. litet # rsoimitteÄea JCeIl 11

ISB/teg»"2595ISB / teg »" 2595

des Fußes 5 eingreift f so daß die Könt&kffläüne gwiscben QruB&platte β und dem Isolierstoffkörper IQ vergrößert ist und die Terbindung eine größere aechattisehe festigkeit Ixat.of the foot 5 engages f so that the kfflüne gwiscben QruB & plate β and the insulating body IQ is enlarged and the connection has a greater aechattisehe strength Ixat.

Die ange$uetBe&te Verbindung 9 ist in den Isolierstoff körper 10 eingebettet», um eine Oxydation der Terbindungsgtelle 9 au %reaf» 3iiiiäe3?2i imä die diircii das Antuetsoheji gebildete ?s3?füTmxmg ergibt atiofe. an dieses* Stelle eine feste TeaRBaaÜceruag la dem lsoliea?stoff-The attached $ uetBe & te connection 9 is "embedded in the insulating body 10 to oxidation of the Terbindungsgtelle 9% au reaf" 3iiiiäe3? 2i imae the diircii formed the Antuetsoheji? S3? F üTmxmg results atiofe. at this * place a firm TeaRBaaÜceruag la dem lsoliea? stoff-

In $igar 2 siad die gleic&eü feile sit gleicliea wie la. figur 1 VBffsetum und die iwsfiliriiiafsfoMa Smelt der von Plguv 1 alt der l«saal3ffief daß die Sruadplatte 6 mit einem soliwalbeiis0fewaÄ8fSrmigea Eisg 12 veree&ea ist und 'die aaordmoag aiif der ^ramdplatte iiaaieriialb des Hinges "befestigt ist» Der Mutersctaittene Steil 13 des Eiliges 12 ergibt eiae .gute meobaaletihe fersialceriwig dee Isolierstoff körpers 10 mit der platte 6«.In $ igar 2 siad the same & eü file sit same as la. Figure 1 VBffsetum and the iwsfiliriiiafsfoMa Smelt der von Plguv 1 alt der l «Saal3ffie f that the Sruadplatte 6 is united with a soliwalbeiis0fewaÄ8fSrmigea Eisg 12 and 'the aaordmoag aicta is attached to the ^ ramdplatte des iiaaieresiutersiialb des iiaaieresiutersiialb results in a .good meobaaletihe fersialceriwig dee insulating body 10 with the plate 6 ″.

Anstelle des sa den Stab Z angeqmetaditea Inaeiilusses 8 als-Anleitung für die TorrielituaaEg kamt axtoh eia flexibler- dareii« gehender Iraiit oder eine IdLtze benutzt werden, deaeea maasiiree lade gat dem Halbleitereleiaeat 1 befestigt ist und dessen freies Ende aus dem Isolierstoff 10 Ixerausragt. 23er Dra&t ist mit Mitteln wie 2»B# linfeerteiägeii oder Zähnen versehen» um eine gute ¥er* ankerung in dem Isolierstoffkörper mi erkälten*Instead of using the rod Z angeqmetaditea Inaeiilusses 8 as a guide for the TorrielituaaEg axtoh eia flexible-dareii «going Iraiit or an idle cable, deaeea maasiiree lade gat is attached to the semiconductor element 1 and whose free end protrudes from the insulating material 10. 23er Dra t is provided with means such as 2 »B # linfeerteiägeii or teeth" to a good ¥ er * anchoring in the insulating mi catch cold *

Die feuerung ist .jedoöli. nielit nur auf die beschriebenen Seistungsgleiöferieiiter Mit einem einzigen .AnsöfeluSf άύτ aus dem Isolier«· material Mraueragt besenränkt, sondern es kBimBn auch andere Halblöitervorrieiitungen in gleiener Weise ausgebildet sein^ die oder mehrere ^uleitungsdränte naben·The fire is .jedoöli. nielit only to the described Seistungsgleiöferieiiter With a single .AnsöfeluS άύτ f from the vacuum "· material Mraueragt besenränkt but it kBimBn other Halblöitervorrieiitungen in gleiener way be formed ^ ^ or more the uleitungsdränte hub ·

Anla^ent
4 Event
4th

Claims (1)

P.Ä.331 «3*19.5.62P.Ä. 331 «3 * 19.5.62 ISE/Keg* 2595ISE / Keg * 2595 ) Elektrische Halbleiterrörriolitusg ait einem Halbleiterelemeiit, das auf einer Gfxiiztdplatte befestigt ist umd von ei»es festen» mit der Crrundplatt« in Kontakt ste&e&dem Isoliermaterial umist» dadureii gekejuuseiobn&t» da§ das Isoliermaterial) Electrical Semiconductor Rorriolitusg ait a semiconductor element, which is attached to a Gfxiiztdplatte in order from a "solid" with the round plate "in contact"& the insulating material is "dadureii gekejuuseiobn &t" that the insulating material eli aa ier 03?undi>latte TeraaöEert istf indem die platte Miiteraeiüiittene feile aufweist wß& daß die aiiadegtens ®tM®n 2tileitu^sd3*a3it l>e0itat> der aus dem Isolierstoff iisrausragt uad in. diesem, irevimlcevt ist» eli aa ier 03? undi> latte TeraaöEert is f in that the plate has miiteraeiüiittene file and knows that the aiiadegtens ®tM®n 2tileitu ^ sd3 * a3it l>e0itat> which protrudes from the insulating material and is in. this, irevimlcevt » 2») HalbleitearrorricSatiiiig nao3i inapruGli tf dadtiroli daß dea? Materse&iiitte&e feil der Crrimdplatte aus &txmm ftiß mit so&walbenso^wansjfSriaigeffi Quersctoitt fceste&fcf der aus der Q-3Puadplatte hervorragt uad auf dem das Halbleiterelement befestigt ist« 2 ») Semiconductor arrorricSatiiiig nao3i inapruGli t f dadtiroli that dea? Materse & iiitte & e feil the Crrimdplatte from & txmm ftiß with so & whale also ^ wansjfSriaigeffi Quersctoitt fceste & fc f which protrudes from the Q-3Puadplatte and on which the semiconductor element is attached « 3-r) Halbleiterrorrielitmiig mnsh Inspruok 1> daduroÄ daß der Matersetoittene fsil der ßteaadplatte aus einem Hing . mit sc&w.albemsetoaK2f8rffiigea QmerseiiBitt besteilt» ^r aus ät,e^ Grundplatte herrorateht und imeriialb dessen das Halbleiterelement auf der Grundplatte befestigt ist» 3-r) semiconductor rorrielitmiig mnsh Inspruok 1> daduroÄ that the matersetoittene fsil the ßeaadplatte from a Hing. ät with sc & w.albemsetoaK2f8rffiigea QmerseiiBitt besteilt »^ r from, e ^ herrorateht base plate and imeriialb which the semiconductor element is mounted on the base plate" 4.) Halbleitervorrichtung naefe Imsprucli 1 big 3* daduroit gelceimaeieimet, daß der aua dem Isolierstoff ixerausragende 2uleitungS" draht Mittel 2ur ferankeruag in dem Isolierstoff besitzt*4.) Semiconductor device naefe Imsprucli 1 big 3 * daduroit gelceimaeieimet that the 2uleitungS "wire protruding from the insulating material has means 2ur ferankeruag in the insulating material * (3)r«Ba.)Ir*/a. - 15*5*1962 (3) r «Ba.) Ir * / a. - 15 * 5 * 1962
DEJ10547U 1961-05-26 1962-05-19 ELECTRIC SEMICONDUCTOR DEVICE. Expired DE1865182U (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB19115/61A GB975573A (en) 1961-05-26 1961-05-26 Improvements in or relating to semiconductor devices

Publications (1)

Publication Number Publication Date
DE1865182U true DE1865182U (en) 1963-01-10

Family

ID=10124013

Family Applications (1)

Application Number Title Priority Date Filing Date
DEJ10547U Expired DE1865182U (en) 1961-05-26 1962-05-19 ELECTRIC SEMICONDUCTOR DEVICE.

Country Status (2)

Country Link
DE (1) DE1865182U (en)
GB (1) GB975573A (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3437887A (en) * 1966-06-03 1969-04-08 Westinghouse Electric Corp Flat package encapsulation of electrical devices
US3475662A (en) * 1967-11-22 1969-10-28 Westinghouse Electric Corp Hermetically sealed electrical device
DE1944515A1 (en) * 1969-09-02 1971-03-04 Siemens Ag Semiconductor component with plastic filling
US3708722A (en) * 1970-12-18 1973-01-02 Erie Technological Prod Inc Semiconductor device with soldered terminals and plastic housing and method of making the same
FR2454699A2 (en) * 1979-01-12 1980-11-14 Sev Alternateurs Power diode for alternator bridge rectifier - uses encapsulated semiconductor element fitted onto metal base
FR2446541A1 (en) * 1979-01-12 1980-08-08 Sev Alternateurs Power diode for vehicle alternator bridge rectifier - comprises semiconductor element mounted inside cylindrical casing sealed with resin
FR2453500A1 (en) * 1979-04-04 1980-10-31 Sev Alternateurs Semiconductor rectifier for motor vehicle alternator - has diodes soldered to sockets on support plate, with extended contact cross=section
DE2942261A1 (en) * 1979-10-19 1981-04-30 Robert Bosch Gmbh, 7000 Stuttgart Encapsulated semiconductor device on support plate - has semiconductor element soldered between perforated plate and supply electrode and is encapsulated
US5278446A (en) * 1992-07-06 1994-01-11 Motorola, Inc. Reduced stress plastic package
DE19946255A1 (en) * 1999-09-27 2001-03-29 Philips Corp Intellectual Pty Rectifier arrangement
FR2813442A1 (en) * 2000-08-31 2002-03-01 Valeo Equip Electr Moteur Power diode for use in rectifier bridge of rotary electric machine such as alternator for automobile vehicles
FR2813441B1 (en) * 2000-08-31 2005-01-14 Valeo Equip Electr Moteur POWER DIODE FOR EQUIPPING THE RECTIFIER BRIDGE OF A ROTATING ELECTRIC MACHINE SUCH AS AN ALTERNATOR FOR A MOTOR VEHICLE
DE102004010957A1 (en) * 2004-03-03 2005-09-22 Robert Bosch Gmbh camera
WO2019110096A1 (en) * 2017-12-06 2019-06-13 Osram Opto Semiconductors Gmbh Lead frame, method for manufacturing a lead frame and semiconductor device with a lead frame

Also Published As

Publication number Publication date
GB975573A (en) 1964-11-18

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