DE1789200C2 - - Google Patents
Info
- Publication number
- DE1789200C2 DE1789200C2 DE1789200A DE1789200A DE1789200C2 DE 1789200 C2 DE1789200 C2 DE 1789200C2 DE 1789200 A DE1789200 A DE 1789200A DE 1789200 A DE1789200 A DE 1789200A DE 1789200 C2 DE1789200 C2 DE 1789200C2
- Authority
- DE
- Germany
- Prior art keywords
- emitter
- transistor
- power transistor
- base
- metallization
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000001465 metallisation Methods 0.000 claims description 15
- 238000007373 indentation Methods 0.000 claims description 8
- 230000001681 protective effect Effects 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 230000002517 constrictor effect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
- H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/641—Combinations of only vertical BJTs
- H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors
Landscapes
- Bipolar Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE1789200A DE1789200C2 (enrdf_load_stackoverflow) | 1968-06-08 | 1968-06-08 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE1789200A DE1789200C2 (enrdf_load_stackoverflow) | 1968-06-08 | 1968-06-08 | |
| DE1764455A DE1764455C3 (de) | 1968-06-08 | 1968-06-08 | Monolithisch integrierte Darlington-Transistorschaltung |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1789200C2 true DE1789200C2 (enrdf_load_stackoverflow) | 1983-10-06 |
Family
ID=25755386
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE1789200A Expired DE1789200C2 (enrdf_load_stackoverflow) | 1968-06-08 | 1968-06-08 |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE1789200C2 (enrdf_load_stackoverflow) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3210617A (en) * | 1961-01-11 | 1965-10-05 | Westinghouse Electric Corp | High gain transistor comprising direct connection between base and emitter electrodes |
-
1968
- 1968-06-08 DE DE1789200A patent/DE1789200C2/de not_active Expired
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3210617A (en) * | 1961-01-11 | 1965-10-05 | Westinghouse Electric Corp | High gain transistor comprising direct connection between base and emitter electrodes |
Non-Patent Citations (1)
| Title |
|---|
| "Electronics" 5.April 1965, S.116 * |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| BHJ | Nonpayment of the annual fee | ||
| AC | Divided out of |
Ref country code: DE Ref document number: 1764455 Format of ref document f/p: P |
|
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition |