DE1789047C - Photoresistor for radiation with a wavelength greater than 8 my - Google Patents

Description

30 crystal heated, so that its conductivity is increased. This increase in conductivity can lead to Regi radiation can be exploited.

The wavelength range is between 8 and 11 μ

technically of particular importance because the radiation

35 of the CO "laser, the most energetic known laser, which" has a wavelength \ <v 10.6 μ, lies in this range. The radiation receiver is therefore

The subject of the main patent 1 614 535 is, in particular, a detector for the radiation of this

Photoresistor made of a semiconductor material (Indi-Lasers suitable. Furthermore, the radiation

umantimonid), the mutually parallel aligned, receiver ₄₀ excellent as the detector in the same

needle-like inclusions from a second, electrically wavelength-higher heat radiation low

better conductive, metallic absorbing crystalline color temperature emitted by objects

Linen phase (nickel antimonide) contains, and which is sen, the surface temperatures between about

Have inclusions for the detection of rays with a - 20 ° C and 4 100 ° C. As such objects

Will length greater than 8 μ a distance of 45 come in particular live Depending on organisms in question,

others that are equal to or less than the vacuum - their body temperature in this temperature range

is the wavelength of the radiation to be received. Cherishes.

Embedded in the semiconducting phase, so that the thickness of the semiconductor crystal as possible inclusions is achieved with this photoresistor, can be kept small, the SiO _x layer should be so thick that the semiconductor crystal also radiation of a whiteness is preferably so thick that a considerable part of the length absorbed, for the indium antimonide without the penetrating radiation in the layer is absorbed inclusions due to the location of the absorption. The SiO ^ layer should therefore preferably already be permeable at 7.2 μ and therefore not at least 2 μ thick. This layer thickness corresponds to is more sensitive. In the case of an SiO2 layer, the inclusions must be in the wavelength range essentially perpendicular to that in the semiconductor crystal _55, approximately 8 to 9.6 μ μ inclusions running at least in the direction because of the short twice the penetration depth of the radiation in the closing effect of these inclusions of the dark respective layer. The penetration depth is defined, the resistance of the semiconductor crystal too much - as a reciprocal absorption constant. If one would be set. A radiation receiver with a layer thickness of twice the penetration depth of such a photoresistor has the advantage that it can also be operated at room temperature with about 86.5% of the penetrated radiation. Radiation absorbed in the layer. Also outside of the invention, the object is to improve one of the mentioned wavelength ranges, such a photoresistor is sufficient that, despite the layer thickness of at least 2 μ, a high proportion of the penetrating radiation is sufficient for the radiation receiver to absorb a significantly reduced thickness of the semiconductor crystal in weaving.

length range between about 8 and 11 μ reached Since the absorption maximum of the SiO ^ layer depending

will. according to the oxygen content at something different

Ι 789

Wavelength is, the composition, the SiO ^ layer of wavelengths • "rich of maximum absorption something comparable _K n by special election. In the case of an SiO layer, the irniion maximum is, for example, at a wavelength of approximately 10 μ, in the case of a SiCX layer it is at a wavelength of approximately 9 μ. The sensitivity of the radiation receiver is particularly high in the area of the absorption maximum of the SiO _x layer. However, regardless of the special composition of the layer, it is sufficiently large in the entire wave size range between 8 and 11 μ to obtain high sensitivity over a breit.-ι cn Wcllenlängenbereich, the SiO layer may advantageously be designed so that the sow ι iiilfgehalt varies across the layer thickness.

, V, Indium antimony crystals with inserts made of nickel antimonide, in which the connections with the indium timonide produce an eutectic, have proven to be particularly advantageous for radiation sensitivity. form. With directional crystallization or with zone melting of indium antimonide with 18 percent by weight nickel antimonide, a söksirs eutectic is formed in which the nickel antimonide separates in t'orni of parallel N -.- i.-ln, which is about 10 to 100 μ, preferably _w .Ve about 30μ, long, and about 0.5μ in diameter. The lateral distance between the individual needles is about 3.5 u.

Terner are suitable as semiconductor bodies for the Radiation receiver indium antimony crystals with inclusions of manganese antimonide, which in turn a eutectic consisting of the semiconductor base material and the inclusions is present. With gench parts or during zone melting of Such a eutectic is formed by indium antimonide with about 6.5 percent by weight of manganese antimonide, m the manganese antimonide in the form of needles aligned essentially parallel to one another ruled out. The needles are about 10 to 100 μ long have a diameter of about 1 μ and a lateral distance of about 3.5 μ.

Tm individual are such HalbleiterUr.stalle and processes for your- production in an essay in de "writing" The Journal of Physics and Chemistry of Solids ", Volume 26 (1965), pp 2021-2028, ^SC loading the ^b inclusions in the semiconductor crystal

Partly in the direction of the radiation to be captured

or perpendicular to the direction of the contacts to be received can ^beis g ' ^sw ^ se ^ f _z ^^ ^Kon * ^act ? envisaged sem Au ^ _{half kiters} .

the radiation certain UD-rn _{hen these}

crystal * 1 »st ^a , _e ^ °; _f ™ high vacuum to ^ hicht can ADVANTAGES toi t "Lrbleiterknstalls been cleaned surface aes

be steamed ... - _t for example

The Halbte.terknstaU 1 * t P ^ ^ _χ

? ' ⁰⁰¹ ^ ^m ^ VhSt is about 2 μ thick, in it becomes xo long. The SiO-SchichM t ^ a μ ^ ^. ^

hence ^^ - '^^. ^ fab ο biert. Another part of thin steel abs > _{lM sdbst absor} .

the radiation is in the «j _{kdl of the}

biert Da ^{dlc 5} P ^ ^^ nickel antimonide _{inclu- 1S} den I ^ iumant.momds with N ^ ^ _rich .

sen ^. Zirnm ^ emf r «ur u _cm) _, _amounts

ur. _& the ^El ** ££ ^ 5sttll _a ^V _en Dunkclwide · stand has this semiconductor crystal

^vc " ^et ^^ ⁷ · ° η a ol _e icharti _fc en semiconductor crystal ao So that '" £ J ^en \ *, _{lwa g} , ° _i large part of the without SO-Sch.ch ^e ^ ^el _absQ ^g _rbicrl ^ would have to d. have penetration ^ "f ^ of about 0.01 cm. the

st ^{Kn] l} fj ™ ^L ^ c ^ i of indium antimonide with AbsorptionskonstaniJ- _{at Uch}

a ₅ nod »^^^^ / about 200 cm-, ^» jJ ^^^ Singtief = of 0.005 cm results, so that «f ^{h eme} £ ¹ ™ J _at about 86.S» /. the D «Ä _absorbifirt be ^ i, is then e.nd '- ^ ntoiS uahl B _{leiterknslan t, ie} thickness ser

3 ° 0.01 cm. Urn ^ You _{arose the Dark Resistance}

and a brood ^ " ^υ · j _{h the} semiconductor would have to err ^ ^ before> ejjv .0Ohm

crystal about _{SiO -layer} provided with half-

Langt dte. with one ^^ ^ ^

35 ^ ™ \ ^S , J ^ by this G. Greatensvergle.ch very targeted advantage

clearly cn. _k ; "Of the beam according to _{the invention}

The Ha ^ ^{e kr} _also beneficial meander-

^ Pg ^s , ^ _{in This way we} d achieved that <o form g output ^ det se ^^ ^

the STRAMU g ν _{huh, tmsmä} ß _ig small, game be kn alls ^ on "η ^^ _rt," and

J 'st ^ q _dunks lwiderstand the semiconductor

nevertheless _egg , _{in Fig} . 2 em is such Straf45 ^nstalls ^ _n ^e _f ^r _a ^{Z 'e'} _{with a} length _r mäanderförm.gen HaIbungjempfi ^ J ^ _Darges tellt, The Ha.ble.ter ^ tt indium antimonide "i ^ the

₅₀ right to the direction _and ^ _g

fl eßen ^ ^ _{d A dn} ends

and examples like that ,, the

SS ^^^ Se, an ex

füSungsbelpiel for a radiation receiver

^ dSf Ä. 1 shown radiation receiver commits the 'semiconductor crystal 1 of indium

For example, existing copper wire s 4 see easily, which are soldered to the semiconductor crystal with a low-melting solder mi. Instead of this O erflache ^^ ^ _o f this, a

17 applied Jr I ^ Jß- ^ Ät.,

J J '^^ by 0.001 cm thick and 0.05 cm

can only be glued on.

de ^ r J _{n fJer Si} o ₂ -layer can for example

SiO can be vapor-deposited onto the cleaned surface of the semiconductor crystal in an oxygen-containing atmosphere, or an SiO layer can first be vapor-deposited in a vacuum. which is then oxidized _{to SiO 2.} The SiO layer can then be vapor-deposited onto _{this SiO 2 layer in a high vacuum.}

When reducing the width and increasing the length of the semiconductor crystal, higher Dark resistance can be achieved.

1 sheet of drawings

Claims (4)

1 2 A reduction in the thickness of the semiconductor crystal Pateniansnriiche- ^is desirable to get one to adapt to the Claims. Input resistances of conventional semiconductor circuits suitable dark resistance of the semiconductor crystal Photo resistance from a semiconductor material 5 of about 10 ohms to 10 kilo ohms (indium antimonide), which are parallel to each other, without the semiconductor crystal being made excessively long in comparison to directional, needle-like inclusions of two of its width got to. th, electrically better conductive, metallic absor- The thickness of the semiconductor crystal is the crystalline phase (nickel antimonide) that is produced, the expansion of the crystal in the direction of the incident, and its inclusions for the post- _I0 radiation. However, a reduction in the thickness of rays with a wavelength greater than the semiconductor crystal is opposed to the fact that they are spaced apart from one another by more than 8 μ, the sensitivity of the radiation receiver becomes smaller with the thickness of the semiconductor crystal to be received equal to or smaller than the vacuum wavelength According to the patent, radiation is, as the thickness decreases, an increasingly smaller amount of radiation, characterized in that 15 part of the radiation penetrating into the semiconductor crystal is absorbed in the semiconductor crystal to receive the radiation and towards the surface of the semiconductor material (1) a registration of the radiation can be exploited. Layer (F) made of SiO ₁ . with 1 <λ <2 is provided. To solve the problem mentioned is fiction 2. Photoresistor according to claim 1, characterized in accordance with the determination of the reception of the radiation, characterized in that the SiO ₁ layer is at least 20 th surface of the semiconductor material, a layer 2 μ thick. made of SiO ₁ with 1 < χ <2 provided. 3. Photoresistor according to claims 1 or 2, because it can be achieved that a considerable amount is characterized in that the oxygen content of the incident radiation is already _{absorbed in the SiO x of} the SiOj layer (16,17) over the layer thickness layer, so that the semiconductor crystal varies. 25 only a smaller part of the penetrating 4. Photoresistor according to one of the claims to absorb the radiation and therefore 1 to 3, characterized in that the semi-thinner can be made than without a layer conductor material (11) is designed in a meandering shape. Through the in the layer and in the semiconductor kri> uli even absorbed radiation is the semiconductor