DE1564331A1 - Light amplifier device in the solid state - Google Patents

Description

ϊ2§ = 2§2Ι-Μ4ϊ§ΰ§ΪΙϊΑ

. H. LEINWEBER dipl-ing. H * CARPENTER

PosUchtdc account: Bank account: Telephone Tal.-Adr.

Munich 22045 Drwdner Bank AG. MUHdIm (IIII) MIfIf Ulnpat MBRdlM

MDnehen 2, Mirl.nplatz, account no. 92790 _Nßue jg | _p ^ 261333

* ΜΒβΑ · ΙΙ 3, ROMnt «l 7th 2nd exercise. (Kuitermann-Poiiog)

June 3, 1966

MATSUSHITA EIBOTEIC INDUSTRIAL COMPAM, LIMITED, Osaka / Japan

Solid state light amplifier device

The invention relates to a light amplifier device in the solid state new principle for transforming, amplifying and light display of an incident energy signal of a Image from corpuscular rays or the like., The light rays, Radiation, electron beams, electron beams or the like. by harnessing electroluminescence.

The invention is characterized by a light amplifier device in the solid state, in which it is assigned to a non-linear resistance element made of electroluminescentia, fluorescent material that luminesces at least in an alternating field and has a light transmission or light reflectivity has an element responsive to energy, z.H. a photo-conductive element, is provided, the electrical conductivity at least changes due to the excitation

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changed by an incident energy, and by the necessary Elements and electrodes, which are connected to the voltage source, v / obei the luminescence of the non-linear resistance element in constant and olfactory fields in connection with the amount of energy supplied to the element responsive to energy is controlled.

There are already numerous light amplifying devices known in the solid state. However, these are all designed in such a way that they reduce the luminescence of the electroluminescent in the alternating field Control element, dos from a mixture of a binding material with high specific resistance and a powdery, electroluminescent ^, fluorescent material ordered by making the changes usable the alternating current inipedance, that of the excitation of the photoelectric conductive element is assigned by the incident energy. This arrangement was based on the assumption that it was powdery Electroluminescent materials only luminesce in an alternating field and consequently the excitation system is used in an alternating field. It is known, however, that the photoelectric conductivity of the photoelectrically conductive elements is extraordinary in the case of alternating current low compared to that of direct current, and it is difficult to operate with great sensitivity to drive.

The invention is based on the finding that the Lumines-

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time of powdery, electroluminescent Liiaterialien, which luminesce with alternating current, have a high intrinsic resistivity and were assumed to be Can only be excited in an alternating field, and can also be excited in a constant field, if these materials have a very high resistance. (semiconducting) substances are mixed, either from a single Substance or a mixture of substances. Furthermore, the invention is based on the finding that the excitation of lights im ", the alternating field becomes stronger because of the electric field, if the resistance value of the resistance substance decreases, whereby a high light intensity can be achieved in a low voltage alternating field is.

According to the invention, the energy responsive 31ement, 2.B. a photo-conductive element whose electrical conductivity changes at least in connection with the excitation by an incident energy and the non-linear resistance element from a very non-linearly resistant Material with light transmission or light reflection properties, which consists of a single substance or a mixture of substances and a powdery, electroluminescent, fluorescent one Contains material, actuated by the superimposed DC and VJe chs el voltages. This arrangement increases the sensitivity of the element responsive to energy, e.g. a photoelectrically conductive element, compared to the incident Energy. Increasing the electrical conductivity of the Energy.appealing element in connection with the excitement

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by the incident energy, controls the increase in luminescence of powdered electroluminescent, fluorescent Material that is in the same direction as the nonlinear resistance element field mixed iot, as well as at the same time the non-linear specific Resistance of the nonlinear resistance material "in the constant field. Consequently, this reduces the powdery, fluorescent Material surrounding medium - since it is non-linearly resistant - its specific resistance is non-linear in Dependence on the constant field.

The strength of the alternating field applied to the powdery, fluorescent material increases non-linearly and with a reinforcing effect versus the strength of the incident energy. Consequently, the light excitation becomes the powdery, fluorescent Material controlled with regard to its non-linear increase.

Since the alternating impedance of the element responsive to energy is a function of the decrease in strength of the incident energy, the alternating impedance controls the non-linear increase in the alternating field applied to the non-linear resistance element. Consequently From this point of view too, the luminescence of the powdery fluorescent material becomes in view of its increase controlled.

As stated above, according to the invention, the Sensitivity of the element responsive to energy to

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the excitement by the incident energy-increased and this directly controls the luminescence of the powder-form, electro- -luminescent, fluorescent material in the nonlinear Resistance element in one and in two directions and also through the changes in electrical conductivity and alternating impedance and further the drag reduction of the powdery fluorescent material surrounding mass in the same field, and with high sensitivity and amplifying effect, the efficiency increases of the alternating field applied to the powdery fluorescent material.

Such multi-level effects produce an extremely sensitive one Operation as he did with the. conventional devices do not was achievable; In addition, the device is operated with very low voltage in the field of the armpit.

. Further advantages, details and features of the invention emerge from the following description. In the drawing, the invention is shown using four longitudinal sections, for example, which show the respective structure and the current supply system suitable for the animal light amplifiers according to the invention in the solid state, _{or the like} .

In these non-limiting examples, "like parts are provided with the same reference numerals _β Furthermore, an enlarged scale is used _s not sodaB the dimensions in each case übereinstinmen with the description"

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In Fig. 1, the device according to the invention is shown a translucent support plate 10 such as a glass plate; a first electrode 20 is a translucent, electrically conductive coating of a metal oxide, v / ie tin oxide; a non-linear resistance element 3C contains powdery, electroluminescent, fluorescent material. These elements are "layered".

The non-linear resistance layer 30 contains a known, powdery, electroluminescent, fluorescent material 31, such as ZnS: Cu, Al _1, which causes alternating luainescence and has a high intrinsic resistance.

The non-linear resistor material for the resistor clients 30 consists of one or more substances that give him give light reflectivity or light transmission.

This non-linear resistance layer can consist of a single semiconducting, non-linear resistance material, which is produced by incorporating suitable impurities into a ferroelectric substance. According to the invention, however, this layer consists of a mixture of a powdery fluorescent material, for example a "Sxpoxyhars, a translucent binder 33" or higher intrinsic resistance and lower specific dielectric constant than the powdery, flvGveszia ^ ers.e "^ material. And a light-reflecting or lichtflurchgsler., valverfer :: i ^ -r _; :?:! ? \ t linear TJider-

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stand material 32, the specific dielectric constant of which is the same or higher than that of the powdery fluorescent Materials «

The nonlinear resistivity of this layer is preferably as big as possible.

The powdery, non-linear resistor material can z ^ B. be a material with a metal sulfide which has n-impurities such as CdSrCl, a material with a metal oxide such as SnU ₂ , such a metal sulfide or oxide to which impurities such as St are added, or preferably consists of a material such as SiC.

The electrical characteristics of these materials can be expressed by the formula

I = K? ^m

express, where V is the applied DC voltage, I _{1 is} the current, and m is the light linearity coefficient.

If the non-linear resistor material consists of CdSrCl, the non-linearity coefficient has a value m \ i, 0, that of SiC, SnOp or the like. on the other hand a value of rn ^ 3. The Resistance E is expressed by the formula RÄ-V "; hence the resistance to the electrical equilibrium field decreases non-linearly.

The value of m should be as low as possible and it will be pre-909836/0716 -

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Zugsweioe CdS: Cl or the like. used. The volume percent of the binder 33 and powdered electroluminescent, fluorescent. Material 31 for mixing with the resistor material are chosen to be appropriately smaller than the volume of the powdered, nonlinear resistor material 32 and that the alternating field applied to the powdery, fluorescent material due to the decrease in the ambient resistance which is associated with the constant field control of the powdery, nonlinear resistance material 32 is. With regard to the constant K in this equation, the material of the nonlinear resistance element 30 is chosen such that that. Its DC resistance is not extremely small or large. .,

The thickness of the nonlinear resistance layer 30 should be selected such that both the DC resistance and the AC impedance has a suitable black-white ratio of the output light image Lp, for example, a value of the order of magnitude from 50 to 2 m. on the basis of what is described below Relation to the energy responsive element 40.

The energy-responsive element 40, which is due to the excitation by the incident energy L-j at least in its electrical conductivity changes, is for example a photoelectrically conductive layer.

This photoelectrically conductive layer 40 is a ge

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sintered layer of CdS, CdSSe or CdSe or the like., which with Cu, Cl or the like. has been activated, or it consists of a material from a powdery, photoelectrically conductive mass described above, which with a binder, such as epoxy resin with is mixed with a high intrinsic electrical resistance. This photoelectrically conductive layer 40 is constructed in such a way that if there is no incident energy L- | a high resistance generated. Their thickness can be selected within a wide range ■ and is at the same time taking into account the direct current resistance and the AC impedance of layer 30, for example 1.0. until

. A second electrode 50 is such that it the incident energy Im lets through.

If the incident energy exists L | from rays of light, this electrode can be a translucent, electrically conductive one Be JiIm, which contains a metal oxide such as tin oxide, or the like; in the Case of an electron beam, radiation or the like. However, the electrode can either be formed by vapor deposition of a metal, like aluminum or the like. formed film or a sheet of this Be metal; Is the incident energy a special radiation, the electrode can have a layer of an electrically conductive .Paint, v.le silver paint or the like. be. An alternating voltage level 60 and a DC voltage source 70 can be seen as s-.vi. the first electrode 20 and the second electrode 50 are connected, since they are connected to an alternating voltage Y ^, which is a direct voltage

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Vg is superimposed, act on. Corresponds to the incident Energy of the dark state, the 7 / ert τοη Vg is set in such a way that that is, appropriately, greater than or nearly equal to that Amplitude, of V »and that the light output L2 of the non-linear Resistance layer 30 is suitably small.

Are light rays or a Sontgenstrahl or the like. irradiated as incident energy Im, these pass through the second electrode 50 and excite the photoelectrically conductive layer 4u, which is an element responsive to energy, so that the electrical conductivity is increased. The light intensity I ^ of the powdery, electroluminescent, fluorescent material 31 is increased by this direct current.

The luminescence mechanism based on such a constant field is the so-called carrier injection effect.

On the other hand, it causes the electrical conductivity to increase the layer 4ü an increase in the Vg of the layer 30 based distribution ratio, whereby the nonlinear electrical resistance of the layer 30 by means of the constant field controlled v / ird.

As a result, the powdery nonlinear resistor material decreases 32 lying DC voltage. Accordingly, the resistance to the increasing DC voltage increases non-linearly cb and thus also the resistance of the powdery, electro-

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luminescent, fluorescent material 31 surrounding medium ai).

On the other hand, the strength of the powdery electroluminescent, fluorescent 'material 31 applied constant field a function of the increase in the electrical conductivity of the medium. . "

The light intensity of the powdery, fluorescent material 31 is therefore controlled with respect to its increase by the alternating field. Furthermore, as mentioned above, the non-linearity of the powdered material 32 is overly linear. Accordingly, with a very small increase in the strength of the constant field, the electrical conductivity of the medium increases with extremely high sensitivity . The excitation of the photoelectrically conductive layer 40 by the incident energy L- | on the other hand, it causes an increase in the electrical conductivity and, at the same time, a reduction in the alternating current impedance.

Consequently, it adopts the non-linear resistance rail

30 alternating voltage applied by the voltage source V ^. Even From this point of view, there is an increase the light excitation of the powdery, fluorescent material

31 alternating field,

Since the device according to the invention, the luminescence of the powdery material 31, as described above, both increased in constant as well as in alternating fields, the from the

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Layer 50 originating luminescence Lo with extremely high

Sensitivity can be increased by a very small increase in L-j.

Through an incident energy, like L-j - a light image, an X-ray image or the like. - becomes a positive, visible, luminescent image 1 ^ which is converted into an intensified image is visible on the non-linear resistance layer.

The volt (V ") - ampere (I) characteristic of the photoelectrically conductive element is expressed by the formula I ^ V ⁿ , where η denotes the coefficient of non-linearity. In order to ensure highly sensitive operation of the device, the value of η is preferably chosen in this way that it is smaller than the coefficient of nonlinearity m of the layer 30. From this point of view, the η value of the above-described sintered photoelectrically conductive layer is 1 <η ^ 1.5t al ^{so 3e} h ^ favorably close to the value of the linear element.

There is the incident energy L- | from rays of light, can both on the second electrode 50 and on the deposited photoelectrically conductive layer 40 at regular intervals V-shaped, round or the like. Kills and openings may be provided so that the layer 40 is also completely excited internally.

In the embodiment according to FIG. 2, the incident energy L _{1 used} consists of light rays, X-rays or the like.

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The photo-electrically conductive layer 40, which is the energy-responsive Element consists of the above-described int e rt en s chi ent.

This sintered layer 40 is through about 20 minutes permanent sintering of a material such as CdS, CdSSe or the like. with impurities such as Cu or Cl in an atmosphere of I ^ at about 600 ° C obtained. A second electrode 50 with a trans- '■ parent, electrically conductive film of tin oxide or the like. is attached to a carrier plate, e.g. a quartz plate, which the incident energy L-j transmits and a high melting point Has; then sintered material is applied in the form of a layer and the whole is sintered. ■

This device comprises element layers 81 and 82. Die Layer 81 is a light shielding layer with a resistance that prevents light from flowing back from layer 30. This layer is made by mixing finely powdered carbon in an epoxy resin or the like. manufacturedf its thickness is approx. 5 to 20 / t.

The light reflective layer 82 has a resistor and is by mixing powdery, high intensity or Intense dielectric material, such as TiOo, BaTiO * or the like., Or of light-reflecting, powdery, white material, such as ZnSod.d ^ l. with a resistant binding agent, such as

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Naturated epoxy resin or the like. Obtained and forms a layer with a thickness of about 10 to 30/1. These layers 81 and 82 can be used in any embodiment of the invention.

Care must be taken that the first electrode has openings and. that the area occupied by this electrode may be small with respect to that of the second electrode 50, so that this electrode is subjected to a superposition of both direct and alternating currents and thereby the light output the non-linear "resistance layer 30 increases and the operating voltages V ^ and Vg decreased. The first electrode 20 can have the shape of a parallel grid or a Uetz and such be arranged so that part or all of the layer lies between layer 40 and layer 20. Therefore can the first electrode 20 having the openings can either be embedded in the interior of the layer 30, with part of the Electrode in the surface opposite the layer 40 is exposed, or applied to the surface of the layer 40.

The first electrode 20 is by incorporating metal wires such as tungsten ocT.dgl, of the order of 10 to 30y. # - in the form of a lattice with pitches of about 200 to 10OJJL ₁ or by cross-arranging the wires in the form of a Mesh or tying the wires into a mesh made with 40 to TOO mesh.

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In the embodiment of FIG. 3 there is a second Electrode 50 provided with openings in order to use the laterally occurring photoelectric line at the sections of the openings close. ·

So since in this embodiment the laterally occurring photoelectric conduction is used, the second electrode is directly excited by the image L-j of the incident energy; consequently, L-j can not only have a visible image, but also a bundle of electrons or the like. irritate. The second electrode 50 with the openings can either be transparent or not. she can "either be incorporated in the photoelectrically conductive layer 40, which forms the element responsive to energy or - as shown in the drawing - lay bare in places, or stick firmly to the surface. The electrode 50 may be either in the form of a parallel grid or that of a have the last. For example, by inserting metal wires, such as tungsten wires or molybdenum wires of the order of "10 to 1 (jQ / £ in the shape of a grid with divisions from approx. 2OC to 70υ / Α. brought or the wires are in a network linked from 4ύ to 100 mesh.

In the embodiment according to FIG. 4, in addition to the arrangement according to FIG. 3, there is one which transmits the incident energy L-j Layer 110 between the incident energy L-j as well transmitting third electrode 100 and a photoelectrically conductive Layer 40 introduced, which is an energy-responsive egg

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ment is. This embodiment is designed such that the laterally occurring photoelectric conductivity of the layer 40 is made usable by the incident energy L-j, which has been transmitted by the carrier plate 90 which transmits the incident energy L, the third electrode 1 and the layer 110.

The photoelectrically conductive layer 40 is designed in such a way that its electrical conductivity is achieved without irradiating light quite large and the electrical conductivity of the layer 110 compared to it is smaller. If L-j is a light ray image, the layer 110 consists of a translucent resistance material, containing, for example, a denatured epoxy resin.

Is L- | the Bi] .d of a radiation, such as X-rays, can this layer of epoxy resin or the like. exist with a powdery electrically conductive or a resistor Substance such as finely powdered carbon is mixed.

This layer has a thickness of approx. 25 to 150 / C. The first electrode 20, the second electrode 50 and the third electrode are each connected to a voltage source 120 and the AC and DC voltages V ^ and Vg ₂ ^si - ⁿ ^ between of the first electrode 20 and the second electrode 50 superimposed on each other, while the voltages V ^ ₂ and Vg ₂ between the first electrode

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20 and the third electrode 100 are superposed on each other.

The non-linear resistance class 30 are superimposed currents

¹ AS ^{= 1} AI ^{+ X} A2 ^and % ^{a 1} BI ⁺ %

supplied, which consist of the T / echsel- and constant light currents I ^ Ig ^, the voltages Y ^ *; Ygj and the incident energy L «, and the alternating and direct currents I ^ ^{un (} l Ig9> clie pass through the columns of the two grid electrode layer 81, for the layers 110 and 40, in relation to ^ 42 '^ B2' ^ ^er ^ ^ec h ^se l ^s ^ ^r0II1 i ^II1 P ^e danz and the electrical conductivity of the layer 40. ·

Due to the mean amplitude ΊΐχζΙ of this alternating current I ^ -Z and the absolute fourth llgxl of the direct current Ig ^ the illumination of the powdery, electroluminescent, fluorescent material is controlled in such a way that the luminescence is increased both "in zv / ei and in one direction Furthermore, the electrical conductivity of the medium is controlled by I Ig ^ l and this has the consequence that the alternating field strength in the interior of the powdery, fluorescent material is controlled in such a way that an increase is achieved.

The luminous fluxes I ^ and Ig-j increase with the increasing strength of Lj, while the currents I ^ ^{un (} i Ig2 ^nanezo constant.

By changing the amplitude and the phase relationships 909836/0716 BAD OR.QINAU

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between the voltages V ^ -j and V ^ causes the mean amplitude | Ia ^ | either a rise or a fall and can be a V shape to have. Also · the change factor and the degree of this mean amplitude change.

On the other hand, I shows Ig-I even when the tension is reduced and the pole relationship between Vg-j and Vg2 changes, a changed one Behavior similar to that of IIa3 *. Furthermore you can

^ between / VAJ and VA2 as well as the relationships ,, these relationships / between Vg- | and Vg2 can be changed completely independently of their respective relationships.

By providing a means of adjusting or changing one of the two relationships, namely the relationship between the amplitudes of the voltages V ^ and Vj ^ (including those If one of the two ITuIl is) and its phases, and the Relationship between the voltage values of Vg-j and Vgn (including of the case in which one of the two is zero) and its poles, an output light image can be achieved which for an incident light image L-j either positive, negative or mixed positive-negative and at the same time a wide range of adjustment or change of gamma, the Schwarz-iyeLßyVerzo- or the V / irkungsbereich or the like. available.

The drawing shows the case when the voltages Va-1 and Va g of the same frequency are in an opposite phase relationship and Vg1 and -Vj ^ are in an opposite pole relationship. DC field control with Vn ₁ alone is also possible, while '

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V- £ 2 3uf Hull is brought. In such a one-way operation, the layer 110 can be a capacitive, highly insulating impedance layer made of a transparent polyester film or the like.
be. "■

In the preceding description, some embodiments of the invention are explained in detail. Of course' are the specified execution forms both with regard to the Relationships and arrangements can be combined in any way,

According to the invention, powdery, electroluininescent » Fluorescent materials are effectively excited in both unidirectional and bidirectional fields, and thus a very bright output image with very low operating voltage at the same time in a highly sensitive operation of the device, achievable.

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Claims (19)

-2ο- claims: 1. Lichtverstilrkungs device in the solid state, characterized by an energy-responsive element, · its electrical conductivity when excited by incident energy is variable, by a non-linear resistance element powdery, fluorescent, electrically luminescent Material that luninesces in the alternating field and which is based on energy responsive element is assigned by on both elements' • provided electrodes and by a voltage source, which with connected to the electrodes and the! luminescence of the nonlinear Resistance element in both the unidirectional and bidirectional fields controls. 2. Device according to claim 1, characterized in that that the nonlinear resistance element and the energy responsive element are in the form of layers. 3. Device according to claim .1, characterized in that that the element responsive to energy is a photoelectric conductive element. 4. Device according to .Anspruch 1, characterized in that that the energy-responsive element is made of a sintered, photoelectrically conductive material such as CdS, CdSe or their fixed solutions-consists. 909836/0716 ^6ad 5. Apparatus according to claim 1, characterized in that that a non-linear resistor matrix is the powdery, electroluminescent, fluorescent material umgibipma a light reflection or light transmission. β. Device according to claim 1, characterized in that that the non-linear resistance element has a matrix which. From a powdery non-linear resistance material and ■ a "binder and a powdery, electroluminescent ^ s, contains fluorescent material. 7. Apparatus according to claim 1, characterized in that the non-linear resistance material is, for example, a CdS compound is of group H-VI which contains impurities. 8. Apparatus according to claim ti, characterized in that that the non-linear resistance material is a metal oxide or the like. -is. 9. Apparatus according to claim 1, characterized in that that the non-linear resistor material is SiC. _ ■ "· 10. The device according to claim 1, characterized by a element responsive to energy and a non-linear resistance element between a pair of electrodes directed towards one another and a means for superimposing one equal and one AC voltage between the electrodes. 9 0 9 8 3 6/0716 _BAD ORIGINATION -22- 11. The device according to claim 1, characterized in that the electrode provided on a non-linear Viderst ^ iif.selenent made of a powdery, electroluine-absorbing, fluorine-their-en sterile electrode has openings. ^v t. 12. Device according to claim 1, characterized in that that the electrode is on the energy-sensitive side of the Element for changing the electrical conductivity in the event of errogation has openings due to incident energy. 1p. Device according to claim 1, characterized in that that between the energy-responsive element and the non-linear resistance element there is an electrical resistance having light shielding layer is provided. 14. The device according to claim 1, characterized in that between the energy-responsive element and the non-linear resistance element an electrical resistance having, light-reflecting layer is provided. 15. The device according to claim 1, characterized in that the non-linear resistance element on a surface a first electrode and the energy-responsive element having a second electrode with openings that the energy-responsive element appealing element on the opposite surface dgs . Nonlinear resistance element is arranged and that a 909836/0716 third from an inserted impedance element for transmission the incident energy existing electrode is provided on that surface of the energy responsive element which is opposite to the side facing the nonlinear resistance element. '. 16. The device according to claim 15, characterized in that that between the first and the second electrode means for superimposing an alternating voltage (V ^ -j) and a direct voltage (V-D-J) are provided. 17. The device according to claim 16, characterized in that at least either the direct voltage (Vn ₀ ) or the alternating voltage (V «o) with the same frequency as the alternating voltage (Vjm) applied between the first and the second electrode between the first and the third electrode is applied. 13. The apparatus according to claim 17, characterized in that the voltage applied between a first and a third electrode voltage (V ^) is i ⁿ Gegenpolbeziehung ■ a DC voltage (V ^) applied between the first and the second electrode .. 19. The device according to claim 17, characterized in that that one between a first and a third electrode at_ lying Viechs el voltage (Vj ^) in antiphase relation to a BATH ORIGINAL 909836/07 16 -24- i'ejlxGels;):, !!. uri_ · (V »-i) ctelit, which sniiegt between the first and the i '.,: iten Jlekircue ₀ 2l. Compression according to ^ naprueh 17, characterized by ei :; Means for a ülin: .teljen or changing at least one of the following factors: the amplitude or the phase relationship for zviijclien Va ₁ and V-, ₉ , the S'x) aniiunj or the polarity relationship between V-ß-j UJ Yg ₀ · 909836 / 07ΊB