DE1490597C - Method for producing a magnetic field-dependent semiconductor resistor with a grid of parallel electrical conductors on its surface - Google Patents

Description

in the temperature range in question for the alloy - a certain mutual solubility has. The depth of the alloy can be determined by the amount of indium and the choice of alloy temperature of the grid set in the semiconductor base body depending on its intended use and thickness will. It is also known that a higher speed is obtained at higher alloy temperatures of the alloying process than at lower alloy temperatures.

A temperature between the melting point of indium is expedient for the alloying process and that of the semiconductor material. To regulate the depth of alloying, among other things exploited the phenomenon that the semiconductor material depending on the choice of alloy temperature only up to a certain concentration, the saturation concentration, in the molten metal dissolves. So if a relatively high alloy temperature is selected and a relatively large amount of metal Applied to the semiconductor body, until this saturation concentration is established, a greater amount of the semiconductor material in the indium grid than if less indium is used and works at lower alloy temperatures.

The drawing shows a schematic section through an embodiment of one according to the invention Manufactured semiconductor body shown with an alloyed indium grid.

The semiconductor base body is denoted by 1 and the alloyed grid is denoted by 2. Such field plates with a thickness of 20 μΐη can be produced in which the grid is alloyed more than 10 μία deep. The production of the field plate takes place essentially with the following process steps: First, the surface of the semiconductor base body to be alloyed is cleaned and, if necessary, smoothed. Then grooves with a suitable profile are scratched or etched into the prepared surface. The grooves are then filled with indium, for example by vapor deposition or electrolytically using photoresist technology. Finally, this grid is alloyed into the semiconductor surface.

The melting point of Indiumantimonids is about 530 ° C and the indium at 156 ° C. For the alloying step has a temperature from 160 to 400 ⁰ C, preferably about 200 ° C is appropriately selected. The alloying process of the indium into the indium antimonide takes about 1 to 2 hours at an alloy temperature of 200 ° C and about 1 to 2 hours at an alloy temperature of 200 ° C, depending on the amount of indium and the temperature-dependent maximum alloying depth ° C about V2 to IVs hours.

1 sheet of drawings

Claims (1)

1 2 With a silver grid, for example, the surface of the conductor must always be very carefully chemically cleaned. 1. To be able to ensure a method for producing a magnetic field 5 availability of the grid,
The object of the invention is to improve the properties of the antimonide semiconductor body, the surface of which is to simplify the production of this so-called grid field plate with a grid of parallel, striped lines and to improve its electrical and mechanical fen-shaped electrical conductors. which is connected to the semiconductor body by an io. The French patent specification 1112 490 shows in Melting process are connected, thereby Fig. 4 a magnetic field-dependent resistance characterized in that the surface of a with parallel strips, which by soldering or welding First place the flat side of the semiconductor resistor on the surface of the resistor. with parallel grooves are brought with very little. mutual distance is provided, which is then 15 From US Pat. No. 2,894,234, Fig. 6, is filled with indium (2), which then knows a further embodiment of a field plate leg the indium antimonide semiconductor body (1) at whose Semiconductor body consists of a stack of relatively low temperature semiconductor wafers selected in this way, which are each alloyed in by a temperature such that the desired single-metal intermediate layer is separated from one another and alloying depth is achieved. ^a ° With such an embodiment, however 2. The method according to claim 1, characterized in that no high-ohmic resistances are produced, indicates that the width and the mutual if at the same time small dimensions are sought The distance between the grooves is chosen so that they are. The USA. Patent shows in FIG. 7 one more alloyed conductor (2) are smaller than 50 μτα . 25 further embodiment with on the surface of the 3. The method according to claim 1, characterized in that the semiconductor body soldered or vapor-deposited indicates that the indium conductor (2) 10 μτα deep conductive strips. The short-circuiting effect of such an indium antimonide strip about 20 ^ m thick is relatively small.
Semiconductor body (1) are alloyed. The invention is now based on the knowledge 30 that the short-circuiting effect of the conductive strips can be significantly improved if the conductive strips as deep as possible in the semiconductor body protrude. From the German exposition 1 074 683 it is known, the surface of a i -, - 35 rResistance body to be provided with a groove that . there for contacting purposes with conductive The invention relates to a method for filling out material. The invention consists of manufacturing a magnetic field-dependent resistance to the fact that the surface of a flat side with an indium antimonide semiconductor body, the semiconductor resistance initially with each other sen surface with a grid of par- 4 ° parallel grooves with very little mutual allelic, strip-shaped electrical conductors are spaced apart, which are then filled with indium can be seen that are connected to the semiconductor body by a, which is then in the indium antimonide melting process are connected. Semiconductor body in such a chosen, relatively . «. From the "Zeitschrift für Physik" Volume 176 (1963), low. Temperature is alloyed, that the ge page 404 it is known, on the surface magnet- 45 desired alloy depth is reached,
Field-dependent semiconductor body made of indium antimo- : _f »fti.- 'J ₁ J (JJ _n SJj by vapor deposition or electrolytically inserted;' the for the subsequent alloying To apply a grid of silver that no longer need to be cleaned from parallel corridors. Except stripes perpendicular to the direction of the semiconductor dem, one obtains a large effective depth of the body current flowing through. In a 50-term conductor despite only a small depth of alloying. current-carrying and in a perpendicular to current The use of indium as a conductor material in and strips aligned magnetic field arranged connection with the grooves in the surface of the ■ Magnetic field-dependent semiconductor resistance, an indium antimonide semiconductor body also has the so-called field plate, the strips have the advantage that the alloy temperature was so low, the Hall voltage can be kept at least partially short, so that even on one close and thus treat the already existing support body cemented-on semiconductor body Magnetic field dependence of the semiconductor resistance can be. to enlarge significantly. With this method, grids from par- This task, however, is often not sufficiently achieved by grids attached to the upper allele stripes with widths of less than 50 μία area, whereby the spacing of the stripes is resolved because the short-circuiting effect is not deep enough, also less than 50 μία can be enough. Above all, however, it has been found that the alloyed grid of the field plate adheres firmly such electrolytic or from the vapor phase on the semiconductor body and is against mechanical Ereinen Semiconductor body applied raster as a result of vibrations or temperature fluctuations Temperature fluctuations or mechanical 65 sensitive, unless the semiconductor body itself Loosen vibrations over time and eventually become damaged. The material used for the grid is Peel off completely. Furthermore, the production of indium is used, the melting point of which is below the the well-known grid complex. Before the semiconductor material is applied and that with this -