DE1490329A1 - Electrical resistance - Google Patents

Description

Dipl.-Ing. Egon Prince Munich-Pätfing, August 27, 19b2 Dr. Gertrud Hauser

Dipl.-Ing. Goit fried Leiser _{1 / QnoOQ} Patent Attorneys IH 3 UO L Ό

Münciion-Pasing
BodenssestraQe 3 a
Telephone «0227

Postal check; o. Künc! .ar »11707« Our reference: S 1908

S. E. A * - Socilte d * Eleotronique et d'Automatism ·, 138, Boulerard de Verdun, Courberoie / Sein

Electrical resistance

The invention relates to electrical resistors, consisting also conductive layers deposited on dielectric carriers which adhere firmly to the carriers.

On the other hand, there are three main types of such electrical resistances alone with oraphite layers, sole * "It thin""the skin-shaped metal or metal alloy sheet - ohioli-leA" and such with wafer-thin layers au "teyi · keaplexen, especially on the itesi «Τοη ttaaMsyi« Bi * araphiteohichten have a · »Uaaptnaehteil, however ntt» - lioh their Wideretaad etark in the dependence τβη the

Lr.Ha / ge

.- ;;:, - .,. _r . BATH ORIGINAL

ry m, Λ ^ ■ · * · * " t -Λ Λ Ψ) f>

temperature fluctuates "wae it for" a variety of uses makes unsuitable. The thin Oxyd 8 chi cdi th on the base clay tin oxide have a temperature

-4-4

coefficients «between about 10 and 5 ζ 10 _f, which also makes them undesirable for certain purposes. The thin metallic layers, on the other hand, provide a satisfactory low temperature efficiency of the order of magnitude. T0 "^ · You have, however, two other structural disadvantages s BtmwT frlfrmon a · only dttrch vacuum evaporation is a very expensive ■ aoht _t and on the other hand, the adhesion of the layer ■ with the carrier is only bad. Thin layers a «T detr Baeie in front of ZtmuajA a« very good · arrest »it ikren dielektrieettea carriers and consett today also on ▼ earitältTit - ie also cheap Keiee« duaten weardea.

The invention relates to the SahmTftag a · eehea Wideretamda Bit »iner auf eise« dieXeMrieeke «r Wfindliosen Wid« retaBde «ehiefe« _p di · Wl Wl-

ligur Manufacture an att * g * seoiUfc »te VerhaTtaag Aar Layer ait «ure · Tracer gives off a teaferaturkeefflafteBteei swtaebam T0 ~ "« et IO

BATH ORIGINAL

According to a feature of the invention, there is one Resistance a dielectric support, a wafer-thin layer with high resistance at least an oxide closely adhering to the material of the carrier and on this oxide layer a further layer, whose thickness is of minor importance, made of a metal alloy with the cryatallographic structure the underlying thin oxide layer of similar structure.

This includes another feature of the invention Metal alloy at least one substance that enters the oxide layer applied to the carrier.

According to another feature of the invention can the wafer-thin oxide layer is applied to the dielectric carrier in pyrolytic ways rad dl · The alloy then becomes electrolyte on the oxide layer upset «

According to a further, preferred feature of the invention the wafer-thin layer consists mainly of tin oxide and the alloy is a zinc-nickel alloy.

BATH ORIGINAL 80 98 1 1/0 8,0,6 ..

The resistance value results mainly from the properties of the metallic alloy can not affect the precipitation of this alloy regulate the conditions eo, in particular by adjusting the thickness of the alloy their application that the final resistance is so rarilert that the resistance of the layer even has a different value than the alloy as such

The exact setting of the value of each resistance thus obtained can of course then follow duroh Ritsen with a diamond or by lifting off the alloy layer on for dividing Sheet resistors are made in a generally known manner.

Due to the fact that the thin oxide layer essentially serves as a substrate, the temperature coefficient is given to the metallic alloy surface and can therefore easily reach a value of 10 ^-5 to 10, which is a common range for the temperature coefficient of thin metallic layers let. Such a coefficient is easily achieved by means of a Xinn-Nictel alloy deposited on the thin Zinnexydeehloht. BADORLGiNAL

Through this.

809811/0806 ^{S £ S &} *

Because Ban is a metal alloy with the same Type of crystallographic structure as the oxide takes, 2.B. a tin-nickel alloy with the The same tetrahedral structure as tin oxide, is formed during the electrolyte dissolution the bonding layer on the wafer-thin oxide layer a thin transition layer consisting of a Oxjjfaetallkomplex exists, which once a · counteracting effect rerhlndert (the oxide is a semiconductor) and summed up others an intimate attachment of the Alloy layer on the wafer-thin Oxydechioht guaranteed. Since the latter adheres excellently to the dielectric substrate, e.g. PyrolyTemperature resistant glass, is the most mechanical Homogeneity of ready resistance

Been in the manufacture of the resistors ewei successive Yerfahrenssohritte sur implementation come, both of which are known and therefore in one of a nioht described below need χ sunäehst effected, for example a pyrolytisehe conversion of halides or Halogenidmisohung in acid solution, and this geeprüht · solution on the hot carrier then an alloy is electrolytically deposited on the wafer-thin layer formed in the first stage of the process.

BAD ORIGINAL of the «eachla <fn.

30981 1/0806

the soles. Each of these procedural steps is the same Known to those skilled in the art and for the production of the inventive No expensive or rare substances are required. Ib case of a tin-nickel alloy one avoids due to the high quality this alloy is also subject to any post-treatment to protect it against corrosion. Besides can be applied directly to a tin adhesive layer Any standard welding method can be used. the Production of the resistors according to the invention is therefore also extremely economical.

The resistors can be fixed resistors or adjustable resistors or resistance tracks of potentiometers with low resistance or also as conductive surfaces, for use serve as conductor networks for the operation of photoconductive and / or electroluminescent plates or even more find out uses obvious to the person skilled in the art.

The drawing shows a section through the resistor according to the invention * where 1 is the carrier, 2 the wafer-thin Oxydsohicht and 3 the deposited on it Metal sailing sheath.

Claim

BATH ORIGINAL 809811/0806

Claims (1)

requests 1) Electrical sheet resistance with at least one wafer-thin oxide layer adhering to the surface of a dielectric substrate, characterized in that that this wafer-thin oxide layer has a high resistance and that it is at least sun Part of it is covered by a thicker layer of a metal alloy «whose crystallographic structure is related to that of the oxide. 2) Electrical resistor according to claim 1, characterized in that that the alloy layer and the oxide layer contain at least one basic chemical substance «. 3) Electrical resistance according to claim 2, characterized in that that the oxide layer contains tin oxide and the alloy contains tin ♦) Electrical resistance according to claim 3 »characterized in that that the alloy layer consists of a Tin-micro alloy. BATH ORIGINAL 80981 1/0806 5) Process of manufacturing the resistors according to Claims 1 to 4, characterized »that in a first stage by pyrolytic Dissociation of one or more halides in acidic solution on a hot dielectric The carrier deposits the oxide layer and, in a second stage, electrolytically on the oxide layer applies the alloy layer. BATH ORIGINAL 809811/0806