DE1273497C2 - - Google Patents

Info

Publication number
DE1273497C2
DE1273497C2 DE1960S0067416 DES0067416A DE1273497C2 DE 1273497 C2 DE1273497 C2 DE 1273497C2 DE 1960S0067416 DE1960S0067416 DE 1960S0067416 DE S0067416 A DES0067416 A DE S0067416A DE 1273497 C2 DE1273497 C2 DE 1273497C2
Authority
DE
Germany
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE1960S0067416
Other languages
German (de)
Other versions
DE1273497B (de
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to DES67416A priority Critical patent/DE1273497B/de
Publication of DE1273497B publication Critical patent/DE1273497B/de
Application granted granted Critical
Publication of DE1273497C2 publication Critical patent/DE1273497C2/de
Granted legal-status Critical Current

Links

Classifications

    • H10P95/00
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/04Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
    • H10P95/50

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
DES67416A 1960-03-04 1960-03-04 Verfahren zum Aufbringen von extrem duennen, homogenen Metallschichten auf die Oberflaeche von Halbleiterkristallen Granted DE1273497B (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DES67416A DE1273497B (de) 1960-03-04 1960-03-04 Verfahren zum Aufbringen von extrem duennen, homogenen Metallschichten auf die Oberflaeche von Halbleiterkristallen

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES67416A DE1273497B (de) 1960-03-04 1960-03-04 Verfahren zum Aufbringen von extrem duennen, homogenen Metallschichten auf die Oberflaeche von Halbleiterkristallen

Publications (2)

Publication Number Publication Date
DE1273497B DE1273497B (de) 1968-07-25
DE1273497C2 true DE1273497C2 (enExample) 1969-03-27

Family

ID=7499532

Family Applications (1)

Application Number Title Priority Date Filing Date
DES67416A Granted DE1273497B (de) 1960-03-04 1960-03-04 Verfahren zum Aufbringen von extrem duennen, homogenen Metallschichten auf die Oberflaeche von Halbleiterkristallen

Country Status (1)

Country Link
DE (1) DE1273497B (enExample)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE547665A (enExample) * 1955-06-28

Also Published As

Publication number Publication date
DE1273497B (de) 1968-07-25

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