DE1268278B - Ohmic contact on semiconductor components made of silicon carbide - Google Patents
Ohmic contact on semiconductor components made of silicon carbideInfo
- Publication number
- DE1268278B DE1268278B DE19641268278 DE1268278A DE1268278B DE 1268278 B DE1268278 B DE 1268278B DE 19641268278 DE19641268278 DE 19641268278 DE 1268278 A DE1268278 A DE 1268278A DE 1268278 B DE1268278 B DE 1268278B
- Authority
- DE
- Germany
- Prior art keywords
- ohmic contact
- semiconductor components
- silicon carbide
- components made
- gold
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 18
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 12
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 12
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 17
- 229910052697 platinum Inorganic materials 0.000 claims description 9
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 239000010931 gold Substances 0.000 claims description 7
- 229910052715 tantalum Inorganic materials 0.000 claims description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 6
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 description 7
- 239000000956 alloy Substances 0.000 description 7
- 230000000903 blocking effect Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000007704 transition Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- RZDQHXVLPYMFLM-UHFFFAOYSA-N gold tantalum Chemical compound [Ta].[Ta].[Ta].[Au] RZDQHXVLPYMFLM-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910001182 Mo alloy Inorganic materials 0.000 description 1
- 229910001362 Ta alloys Inorganic materials 0.000 description 1
- -1 gold-tantalum-aluminum Chemical compound 0.000 description 1
- DDTIGTPWGISMKL-UHFFFAOYSA-N molybdenum nickel Chemical compound [Ni].[Mo] DDTIGTPWGISMKL-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1608—Silicon carbide
Description
DEUTSCHESGERMAN
PATENTAMTPATENT OFFICE
AUSLEGESCHRIFTEDITORIAL
Int. Cl.:Int. Cl .:
HOIlHOIl
Deutsche Kl.: 21g-11/02 German class: 21g -11/02
Nummer:
Aktenzeichen:
Anmeldetag:
Auslegetag:Number:
File number:
Registration date:
Display day:
1268 278
P 12 68 278.9-33
25. Juli 1964
16. Mai 19681268 278
P 12 68 278.9-33
July 25, 1964
May 16, 1968
Die Erfindung betrifft einen ohmschen Kontakt an Halbleiterbauelementen aus Siliciumcarbid, der durch eine aufgeschmolzene, Gold und Tantal enthaltende Elektrode gebildet wird.The invention relates to an ohmic contact Semiconductor components made of silicon carbide, which are melted by a gold and tantalum containing Electrode is formed.
Bei der Herstellung von Elektroden an Halbleiterbauelementen werden Substanzen verwendet, die vom Material des Halbleiters verschieden sind und die an den zwischen ihnen und dem Halbleitermaterial gebildeten Übergängen Sperr- oder Gleichrichterwirkungen zeigen, die für die jeweils vorgesehene Verwendung besonders vorteilhafte Charakteristiken aufweisen. Außer diesen Übergängen sind aber auch rein ohmsche Kontakte erforderlich, die bei möglichst niedrigen Übergangswiderständen frei von jeder Sperrwirkung sind. Diese Forderung ist deshalb sehr schwer zu erfüllen, weil die bei der Herstellung von Halbleiterbauelementen verwendeten Materialien besonders für Übergänge und Kontakte entwickelt und gezüchtet worden sind, die Sperrwirkungen und Gleichrichtereffekte aufweisen. Darüber hinaus sollen die als ohmschen Kontakte dienenden Anschlußelektroden der Halbleiterbauelemente möglichst unempfindlich gegen mechanische und thermische Belastungen sein.In the manufacture of electrodes on semiconductor components, substances are used that are dated Material of the semiconductor are different and those formed between them and the semiconductor material Transitions show blocking or rectifying effects that are appropriate for the intended use have particularly advantageous characteristics. Besides these transitions, however, there are also pure Ohmic contacts are required that are free of any contact with the lowest possible contact resistance Are blocking effect. This requirement is very difficult to meet because of the production of Materials used in semiconductor components, especially developed for transitions and contacts have been bred that have blocking effects and rectifying effects. In addition, should the connection electrodes of the semiconductor components serving as ohmic contacts are as insensitive as possible be against mechanical and thermal loads.
Die thermische Belastbarkeit der ohmschen Kontaktelektroden ist besonders bei Halbleiterbauelementen aus Siliciumcarbid sehr wichtig, da diese Halbleiterbauelemente im Gegensatz zu allen anderen bisher bekannten Elementen bis zu sehr hohen Temperaturen betrieben werden können.The thermal load capacity of the ohmic contact electrodes is particularly important in the case of semiconductor components made of silicon carbide is very important because these semiconductor components are unlike all others previously known elements can be operated up to very high temperatures.
Es ist versucht worden, verschiedene, bei der Kontaktierung anderer Halbleiter als brauchbar befundene Legierungen zur Kontaktierung von SiC-HaIbleiterbauelementen zu verwenden. Wegen der unterschiedlichen chemischen Beschaffenheit und des in Frage kommenden, viel höheren Temperaturbereichs konnten die untersuchten Legierungen jedoch nicht befriedigen.Attempts have been made to find various found useful in contacting other semiconductors To use alloys for contacting SiC semiconductor components. Because of the different chemical nature and the much higher temperature range in question however, could not satisfy the examined alloys.
Es sind ferner sperrfreie Kontakte für Halbleiterbauelemente aus SiC bekannt, die aus einer Gold-Tantal-Legierung bestehen. Insbesondere wurden Gold-Tantal- oder auch Nickel-Molybdän-Legierungen für η-leitendes SiC und Gold-Tantal-Aluminium-Legierungen für p-leitendes SiC zur Herstellung von bis zu 1200 0C beständigen Elektroden verwendet. Diese Elektroden sind zwar relativ leicht aufzubringen und weisen gute elektrische Eigenschaften auf, ihre mechanischen Eigenschaften machen sie aber für die meisten praktischen Anwendungen ungeeignet.There are also non-blocking contacts for semiconductor components made of SiC known, which consist of a gold-tantalum alloy. In particular, gold-tantalum or nickel-molybdenum alloys were used for η-conductive SiC and gold-tantalum-aluminum alloys for p-conductive SiC for the production of electrodes resistant to up to 1200 ° C. Although these electrodes are relatively easy to apply and have good electrical properties, their mechanical properties make them unsuitable for most practical applications.
Die Erfindung geht von der Aufgabe aus, eine Legierung für ohmsche Kontaktelektroden an
SiC-Halbleiterbauelementen zu finden, die bei sperr-Ohmscher
Kontakt an Halbleiterbauelementen
aus SiliciumcarbidThe invention is based on the object of finding an alloy for ohmic contact electrodes on SiC semiconductor components which, in the case of blocking ohmic contact, on semiconductor components
made of silicon carbide
Anmelder:Applicant:
IBM Deutschland Internationale Büro-MaschinenIBM Germany International Office Machines
Gesellschaft m. b. H.,Society m. B. H.,
7032 Sindelfingen, Tübinger Allee 497032 Sindelfingen, Tübinger Allee 49
Als Erfinder benannt:
Dr. Hans Günter Jansen,
Norfried Schoop, 7030 BöblingenNamed as inventor:
Dr. Hans Günter Jansen,
Norfried Schoop, 7030 Boeblingen
wirkungsfreiem, niedrigem elektrischem Widerstand, großer mechanischer Festigkeit, einfacher Herstellung und Verwendbarkeit für beliebig dotiertes Material eine Betriebstemperatur bis 1200 0C ermöglicht.Ineffective, low electrical resistance, high mechanical strength, simple production and usability for any doped material, an operating temperature of up to 1200 0 C enables.
Um dieses Ziel zu erreichen, wird gemäß der Erfindung ein auf das Halbleitermaterial aufgeschmolzener, Gold und Tantal enthaltender Kontakt aus einer Dreistofflegierung verwendet, die aus 60 bis 90% Gold, 30 bis 5% Tantal und 30 bis 5% Platin (jeweils in Gewichtsprozent) zusammengesetzt ist.In order to achieve this goal, according to the invention, a melted onto the semiconductor material, Gold and tantalum-containing contact made of a three-component alloy, which consists of 60 to 90% gold, 30 to 5% tantalum and 30 to 5% platinum (each in percent by weight) is composed.
An Stelle von Platin kann auch der gleiche Anteil von Palladium genommen werden.Instead of platinum, the same proportion of palladium can also be used.
Als besonders vorteilhaft hat sich eine Legierung, bestehend aus 80% Gold, 10% Tantal und 10% Platin bzw. 10 % Palladium, erwiesen. Die zugehörige Betriebstemperatur läßt sich durch Erhöhung des Anteils an Platin um einige 100 0C steigern. In extremen Fällen, d. h. bei einem sehr hohen Platinanteil zur Erhöhung der zulässigen Höchsttemperatur müssen allerdings andere Nachteile, wie geringere Güte der elektrischen oder mechanischen Eigenschaften, in Kauf genommen werden, was aber bei Halbleiterbauelementen, die zur Verwendung bei extrem hohen Temperaturen vorgesehen sind, durchaus sinnvoll sein kann. Der Platinanteil der Legierung kann unter Umständen bis zu 30% erhöht werden.An alloy consisting of 80% gold, 10% tantalum and 10% platinum or 10% palladium has proven to be particularly advantageous. The associated operating temperature can be increased by a few 100 ° C. by increasing the proportion of platinum. In extreme cases, ie with a very high proportion of platinum to increase the maximum permissible temperature, other disadvantages, such as lower quality of the electrical or mechanical properties, must be accepted, which is definitely the case with semiconductor components that are intended for use at extremely high temperatures can be useful. The platinum content of the alloy can possibly be increased by up to 30%.
Bei p-leitendem SiC hat es sich als zweckmäßigIn the case of p-conducting SiC, it has proven to be useful
erwiesen, der erfindungsgemäßen Legierung geringe Mengen an Al, beispielsweise 0,5 bis 1 %, zuzusetzen.proved to add small amounts of Al, for example 0.5 to 1%, to the alloy according to the invention.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19641268278 DE1268278B (en) | 1964-07-25 | 1964-07-25 | Ohmic contact on semiconductor components made of silicon carbide |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEJ0026269 | 1964-07-25 | ||
| DE19641268278 DE1268278B (en) | 1964-07-25 | 1964-07-25 | Ohmic contact on semiconductor components made of silicon carbide |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1268278B true DE1268278B (en) | 1968-05-16 |
Family
ID=25751031
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19641268278 Pending DE1268278B (en) | 1964-07-25 | 1964-07-25 | Ohmic contact on semiconductor components made of silicon carbide |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE1268278B (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1105067B (en) * | 1958-08-27 | 1961-04-20 | Philips Nv | Silicon carbide semiconductor device and process for making the same |
-
1964
- 1964-07-25 DE DE19641268278 patent/DE1268278B/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1105067B (en) * | 1958-08-27 | 1961-04-20 | Philips Nv | Silicon carbide semiconductor device and process for making the same |
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