DE1208824B - Method for producing an ohmic metallic contact electrode on a half-body of a semiconductor component - Google Patents
Method for producing an ohmic metallic contact electrode on a half-body of a semiconductor componentInfo
- Publication number
- DE1208824B DE1208824B DET19883A DET0019883A DE1208824B DE 1208824 B DE1208824 B DE 1208824B DE T19883 A DET19883 A DE T19883A DE T0019883 A DET0019883 A DE T0019883A DE 1208824 B DE1208824 B DE 1208824B
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- DE
- Germany
- Prior art keywords
- mesh
- semiconductor body
- grid
- semiconductor
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
- C04B37/003—Joining burned ceramic articles with other burned ceramic articles or other articles by heating by means of an interlayer consisting of a combination of materials selected from glass, or ceramic material with metals, metal oxides or metal salts
- C04B37/006—Joining burned ceramic articles with other burned ceramic articles or other articles by heating by means of an interlayer consisting of a combination of materials selected from glass, or ceramic material with metals, metal oxides or metal salts consisting of metals or metal salts
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/02—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/02—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
- B23K20/023—Thermo-compression bonding
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/001—Interlayers, transition pieces for metallurgical bonding of workpieces
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C27/00—Joining pieces of glass to pieces of other inorganic material; Joining glass to glass other than by fusing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/22—Nets, wire fabrics or the like
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/60—Aspects relating to the preparation, properties or mechanical treatment of green bodies or pre-forms
- C04B2235/604—Pressing at temperatures other than sintering temperatures
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/66—Specific sintering techniques, e.g. centrifugal sintering
- C04B2235/666—Applying a current during sintering, e.g. plasma sintering [SPS], electrical resistance heating or pulse electric current sintering [PECS]
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
- C04B2237/12—Metallic interlayers
- C04B2237/123—Metallic interlayers based on iron group metals, e.g. steel
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
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- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
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- C—CHEMISTRY; METALLURGY
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- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
- C04B2237/36—Non-oxidic
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- C—CHEMISTRY; METALLURGY
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- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
- C04B2237/36—Non-oxidic
- C04B2237/363—Carbon
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
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- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/52—Pre-treatment of the joining surfaces, e.g. cleaning, machining
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/72—Forming laminates or joined articles comprising at least two interlayers directly next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/922—Static electricity metal bleed-off metallic stock
- Y10S428/9265—Special properties
- Y10S428/929—Electrical contact feature
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12347—Plural layers discontinuously bonded [e.g., spot-weld, mechanical fastener, etc.]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12444—Embodying fibers interengaged or between layers [e.g., paper, etc.]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12528—Semiconductor component
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12674—Ge- or Si-base component
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12771—Transition metal-base component
- Y10T428/12806—Refractory [Group IVB, VB, or VIB] metal-base component
- Y10T428/12826—Group VIB metal-base component
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- Materials Engineering (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- Life Sciences & Earth Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Die Bonding (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
- Electrodes Of Semiconductors (AREA)
Description
BUNDESREPUBLIK DEUTSCHLANDFEDERAL REPUBLIC OF GERMANY
DEUTSCHESGERMAN
PATENTAMTPATENT OFFICE
AUSLEGESCHRIFTEDITORIAL
Int. Cl.:Int. Cl .:
HOIlHOIl
Deutsche KL: 21g-U/02German KL: 21g-U / 02
Nummer: 1208 824Number: 1208 824
Aktenzeichen: T19883 VIII c/21 gFile number: T19883 VIII c / 21 g
Anmeldetag: 30. März 1961 Filing date: March 30, 1961
Auslegetag: 13. Januar 1966Opened on: January 13, 1966
Die Erfindung beträft ein Verfahren zur Herstellung einer ohmschen metallischen Kontaktelektrode an einem Halbleiterkörper eines Halbleiterbaulements.The invention relates to a method for producing an ohmic metallic contact electrode a semiconductor body of a semiconductor component.
In der Halbleiter-Technologie besteht häufig das Problem, an einem Halbleiterkörper eine metallische Kontaktelektrode mit möglichst guten elektrischen Eigenschaften an der Kontaktstelle anzubringen.In semiconductor technology there is often the problem of a metallic body on a semiconductor body To attach a contact electrode with the best possible electrical properties at the contact point.
So ist es z. B. bekanntgeworden, eine Spitze, die die Kontaktelektrode darstellt, federnd oder auf sonst geeignete Weise an die Oberfläche des Halbleiterkörpers zu drücken, so daß an der Berührungsstelle ein möglichst guter elektrischer Kontakt besteht. Es ist auch bekanntgeworden, eine Vielzahl von kleinen Kontaktpunkten zwischen einer Kontaktelektrode und einem Halbleiterkörper dadurch herzustellen, daß man die Kontaktelektrode gitter- oder geflechtartig ausbildet und mit geeigneten Mitteln gegen die Halbleiteroberfläche drückt. Solche nur angedrückten Verbindungen haben den Nachteil, daß sie zunächst elektrisch gesehen relativ unzuverlässig sind und vor allem mechanisch nicht diejenige Festigkeit haben, die auch nur im entfernten der Festigkeit einer Lötstelle od. dgl. nahe kommt. Es muß außerdem als nachteilig betrachtet werden, daß bei derartigen Halbleiterbauelementen stets eine Einrichtung vorgesehen sein muß, um mit möglichst gleichbleibendem Druck die verschiedenen Kontaktstellen der Kontaktelektrode an die Halbleiteroberfläche zu drücken.So it is z. B. became known, a tip that represents the contact electrode, resilient or otherwise suitable way to press the surface of the semiconductor body, so that at the point of contact the electrical contact is as good as possible. It has also come to be known a wide variety of small ones Establish contact points between a contact electrode and a semiconductor body by that the contact electrode is formed like a grid or braid and with suitable means against the Semiconductor surface presses. Such only pressed connections have the disadvantage that they initially are relatively unreliable from an electrical point of view and, above all, mechanically do not have the strength which comes close to the strength of a soldering point or the like only at a distance. It must also be be considered disadvantageous that a device is always provided in such semiconductor components must be in order to reach the various contact points of the contact electrode with as constant a pressure as possible to press against the semiconductor surface.
Es ist ferner bekanntgeworden, eine aus einem Leiter bestehende Spitze durch Anwenden von Druck und Wärme mit HiKe einer sogenannten Thermo-Druckverbindung mit einer Halbleiteroberfläche zu verbinden. Diese letztere Verbindung hat den Vorteil sehr guter elektrischer Leitfähigkeit an der Kontaktstelle, aber den Nachteil, daß die Kontaktstelle querschnittsmäßig sehr klein ist und somit für größere Leistungen unbrauchbar ist.It has also become known to make a tip made of a conductor by applying pressure and To combine heat with HiKe, a so-called thermal pressure connection, with a semiconductor surface. This latter connection has the advantage of very good electrical conductivity at the contact point, but the disadvantage that the contact point is very small in terms of cross-section and thus for larger ones Services is unusable.
Die Erfindung hat sich die Aufgabe gestellt, ein Verfahren zu finden, mit dessen Hilfe man eine Kontaktelektrode an einem Halbleiterkörper herstellen kann, die mechanisch fest und elektrisch sehr gut leitend auf möglichst großer Fläche mit dem Halbleiterkörper selbst verbunden ist. Dabei stellte sich als größte Schwierigkeit in den Weg, daß die gebräuchlichen Halbleitermaterialien meist sehr spröde sind und daß aus diesem Grund bei irgendeiner flächenhaften Verbindung eines Leiters mit einem Halbleiterkörper die aus den verschiedenen Temperaturausdehnungskoeffizienten resultierenden Schwierigkeiten überwunden werden mußten.The invention has the task of finding a method with the help of which one Can produce contact electrode on a semiconductor body that is mechanically strong and electrically very is connected to the semiconductor body itself in a highly conductive manner over the largest possible area. It posed The greatest difficulty in the way is that the common semiconductor materials are usually very brittle are and that for this reason with any planar connection of a conductor with a Semiconductor body the difficulties resulting from the different temperature expansion coefficients had to be overcome.
Die Erfindung betrifft somit ein Verfahren zum Herstellen einer ohmschen metallischen Kontakt-Verfahren
zum Herstellen einer ohmschen
metallischen Kontaktelektrode an einem
Halbkörper eines HalbleiterbauelementsThe invention thus relates to a method for producing an ohmic metallic contact method for producing an ohmic contact
metallic contact electrode on one
Half body of a semiconductor component
Anmelder:Applicant:
Tektronix Inc., Baeverton, Oreg. (V. St. A.)Tektronix Inc., Baeverton, Oreg. (V. St. A.)
Vertreter:Representative:
Dipl.-Ing. K.-A. Brose, Patentanwalt,Dipl.-Ing. K.-A. Brose, patent attorney,
Pullach (Isartal), Wiener Str. 2Pullach (Isar Valley), Wiener Str. 2
Als Erfinder benannt:Named as inventor:
Thomas Boyd Hutchins IV, Baeverton, Oreg.Thomas Boyd Hutchins IV, Baeverton, Oreg.
(V. St. A.)(V. St. A.)
Beanspruchte Priorität:
V. St. v. Amerika vom 21. November 1960
(70 784)Claimed priority:
V. St. v. America November 21, 1960
(70 784)
elektrode an einem Halbleiterkörper eines Halbleiterelements. Dieses Verfahren wird erfindungsgemäß so durchgeführt, daß auf die Oberfläche des Halbleiterkörpers ein Metalldrahtgitter oder -geflecht gelegt wird und. daß dann durch Einwirken von Druck und durch Aufheizen auf eine Temperatur unterhalb der Schmelzpunkte des Drahtgitter- oder -geflechtmaterials und des Halbleitermaterials oder des Eutektikums von beiden Materialien an den Kreuzungsstellen des Metalldrahtgitters oder -geflechtes mechanisch feste Thermo-Druckverbindungen zum Halbleiterkörper ausgebildet werden.electrode on a semiconductor body of a semiconductor element. This method is so according to the invention carried out that placed on the surface of the semiconductor body, a metal wire grid or mesh will and. that then by the action of pressure and by heating to a temperature below the Melting points of the wire mesh or mesh material and the semiconductor material or eutectic of mechanically strong thermal pressure connections between the two materials at the crossing points of the metal wire mesh or mesh be formed into the semiconductor body.
Ersichtlich löst die Erfindung damit die Schwierigkeiten bei der Herstellung von Kontaktelektroden, die dann entstehen, wenn man relativ großflächige Verbindungen benötigt und diese Verbindungen mechanisch fest sein sollen. Dadurch, daß in vernünftigen technologischen Grenzen die Fläche, an welcher das Drahtgitter oder -geflecht gegen die Halbleiteroberfläche gedrückt und in der eben beschriebenen Weise befestigt werden kann, kann man also auch sehr große ohmsche Verbindungen zwischen einer Kontaktelektrode und einem Halbleitermaterial herstellen; d. h. also, daß der Kontaktquerschnitt groß wird und man damit auch hohe Leistungen über die Kontaktstellen übertragen kann.Obviously, the invention solves the difficulties in the manufacture of contact electrodes, the then arise when you need relatively large-area connections and these connections mechanically should be firm. Because, within reasonable technological limits, the area on which the Wire mesh or mesh pressed against the semiconductor surface and in the manner just described can be attached, so you can also very large establish ohmic connections between a contact electrode and a semiconductor material; d. H. So that the contact cross-section is large and one thus also high performance over the contact points can transfer.
Bei einer besonders vorteilhaften Weiterbildung des oben beschriebenen Verfahrens kann vorgesehenIn a particularly advantageous development of the method described above, provision can be made
509 778/28tt509 778 / 28tt
3 43 4
sein, daß auf die dem Halbleiterkörper abliegende Erzeugung sauberer Kontaktflächen zwischen diesenbe that on the remote from the semiconductor body generation of clean contact surfaces between them
Seite ein zweiter Körper gelegt wird und in einem Oberflächen und der Oberfläche der Drähte des GittersSide a second body is placed and in a surface and the surface of the wires of the grid
Arbeitsgang gemäß dem oben beschriebenen Ver- 14 geätzt oder auf andere Weise gereinigt. Das GitterOperation according to the above-described etched 14 or otherwise cleaned. The grid
fahren der Halbleiterkörper mittels des Metallgitters 14 wurde zuvor gereinigt, beispielsweise entfettetmoving the semiconductor body by means of the metal grid 14 was previously cleaned, for example degreased
oder -geflechtes mit dem zweiten Körper elektrisch 5 oder geätzt oder beides. Damit die Teile 10 und 12or braid with the second body electrically 5 or etched or both. So that parts 10 and 12
leitend verbunden wird. Damit besteht praktisch die und das Gitter 14 erhitzt werden können, ist ein Teil 16is conductively connected. A part 16 thus practically exists and the grid 14 can be heated
Möglichkeit, den zweiten Körper, der sich auf der aus leitendem Metall so angeordnet, daß es mit einemPossibility of placing the second body on the conductive metal so that it connects to one
dem Halbleiterkörper gegenüberliegenden Seite des der Teile 10 oder 12, beispielsweise mit dem Teil 12,the side of the parts 10 or 12 opposite the semiconductor body, for example with part 12,
Metallgeflechtes befindet, entweder aus Metall oder in Verbindung steht.Metal mesh located, either made of metal or connected.
ebenfalls aus einem Halbleitermaterial oder einem io Die beschriebene Anordnung wird dann zwischenalso made of a semiconductor material or an io The arrangement described is then between
anderen spröden Material zu wählen, so daß eine zwei Platten 18 aus feuerbeständigem, hitzeisolieren-to choose another brittle material, so that a two plates 18 made of fire-resistant, heat-insulating
Möglichkeit besteht, derartige sonst sehr schwierig dem Material gebracht, beispielsweise AluminiumoxydThere is a possibility of such an otherwise very difficult material, for example aluminum oxide
miteinander elektrisch gut zu verbindende Teile zu oder Tonerde. Diese Anordnung wird dann zwischenParts that can be electrically connected to one another or alumina. This arrangement is then between
verbinden. zwei Metallbacken 20 und 22 gebracht, die einen Teilassociate. brought two metal jaws 20 and 22, which are a part
Als Halbleitermaterialien kommen zur Anwendung xs einer C-förmigen Schraubzwinge24bilden(s. Fig. 2).The semiconductor materials used are a C-shaped screw clamp 24 (see FIG. 2).
an erster Stelle Silicium und Germanium in Frage, Die Teile 18,10,14,12,16 und 18 werden dann zwischenin the first place silicon and germanium in question, the parts 18,10,14,12,16 and 18 are then between
weiterhin aber auch Gallium, Arsenmetall, Indium- den Backen 20 und 22 in der aus F i g. 2 ersichtlichenbut also gallium, arsenic metal, indium the jaws 20 and 22 in the FIG. 2 can be seen
antimonid, Aluminiumarsenid, -phosphid oder anti- Weise durch Drehen der Spindel 32 eingespannt. Dieantimonide, aluminum arsenide, aluminum phosphide or anti-way clamped by turning the spindle 32. the
monid, Galliumphosphid, Gallium- oder Selentellurid. Zwinge wird dann auf ein Tragteil 26 gesetzt, das aufmonid, gallium phosphide, gallium or selenium telluride. Ferrule is then placed on a support part 26 that is on
Es besteht sogar die Möglichkeit, mit HiKe der Er^ 20 einer Verschlußplatte 28 für eine Glocke 30 ruht,There is even the possibility, with HiKe, of the he ^ 20 of a closure plate 28 for a bell 30 rests,
findung Diamant mit einem Drahtgitter in der eingangs Zwischen den entgegengesetzten Enden des alsfinding diamond with a wire mesh in the entrance between the opposite ends of the as
beschriebenen Weise elektrisch gut leitend und mecha- Heizung dienenden Leiters 16 und den sich durch diedescribed way electrically conductive and mechanical heating serving conductor 16 and by the
nisch einigermaßen fest zu verbinden. Ebenso kann Platte 28 erstreckenden Drähten 34 werden die elek-nich to connect reasonably firmly. Likewise, plate 28 extending wires 34 can be the elec-
man Keramikmaterial, Glas oder Quarz mit einer irischen Verbindungen hergestellt und mit einer elek-ceramic material, glass or quartz is made with an Irish compound and with an elec-
solchen Kontaktelektrode aus einem gitterartigen 25 irischen Stromquelle 36 in Reihe mit einem verstell-such contact electrode from a grid-like 25 Irish power source 36 in series with an adjustable
Material verbinden. Mit Hilfe der Erfindung kann baren Widerstand 38 geschaltet. Darauf wird dieConnect material. With the help of the invention, resistor 38 can be switched. Then the
man beispielsweise zwei verschiedene spröde Halb- Glocke 30 aufgesetzt, wonach ein inertes oder redu-for example, two different brittle half-bell 30 are placed, after which an inert or reduced
leiter od. dgl. miteinander mechanisch fest und elek- zierendes Gas durch eine der Röhren 40 eingeführtConductor or the like mechanically fixed to one another and elec- tric gas is introduced through one of the tubes 40
irisch gut leitend verbinden. Man kann aber auch ein und die Luft durch die andere Röhre ausgetriebenconnect irish with good conductivity. But you can also one and expel the air through the other tube
Halbleitermaterial über das Metalldrahtgitter oder 30 werden kann, bis die gewünschte Atmosphäre inner-Semiconductor material over the metal wire mesh or 30 can be until the desired atmosphere inside
-geflecht mit einem Metall verbinden. halb der Glocke 30 herrscht.-connect braid with a metal. half of the bell 30 prevails.
Als solche Metalle kommen hauptsächlich in Frage: Da der Halbleiterkörper 10, mit dem die VerbindungAs such metals are mainly in question: Since the semiconductor body 10, with which the connection
Molybdän, Wolfram, Tantal, Eisen, Platin. hergestellt werden soll, aus einem harten, sprödenMolybdenum, tungsten, tantalum, iron, platinum. should be made from a hard, brittle
Besonders vorteilhaft ist das erfindungsgemäße oder zerbrechlichen Material besteht und das feuer-Verfahren zur Herstellung eines Halbleiterelements, 35 feste Material des Teils 18 ebenfalls ziemlich spröde dessen Halbleiterkörper aus Silicium besteht, dessen sein kann, sollten die in Berührung stehenden Ober-Metalldrahtgitter aus Nickeldraht von etwa 0,05 mm flächen von allen Teilen präzise aufeinanderpassen, Durchmesser besteht und bei welchem auf der dem was beispielsweise dadurch erreicht wird, daß diese Drahtgitter gegenüberliegenden Seite ein Molybdän- Oberflächen durch Schleifen oder Läppen glatt und plättchen fest mit dem Gitter bzw. Geflecht verbunden 4° parallel gemacht wurden. Es ist wichtig, daß die mit ist. ' dem Gitter 14 in Berührung stehenden OberflächenParticularly advantageous is the fragile material according to the invention and the fire process for the manufacture of a semiconductor element, the solid material of the part 18 is also quite brittle whose semiconductor body is made of silicon, which may be the contacting upper metal wire grids made of nickel wire with surfaces of about 0.05 mm, all parts fit together precisely, Diameter consists and in which on what is achieved, for example, in that this Wire mesh opposite side a molybdenum surface by grinding or lapping smooth and platelets firmly connected to the grid or braid were made 4 ° parallel. It is important that the is. 'Surfaces in contact with the grid 14
Weitere vorteilhafte Einzelheiten der Erfindung der Teile 10 und 12 ebenfalls im wesentlichen parallelFurther advantageous details of the invention of parts 10 and 12 are also essentially parallel
sind in den Unteransprüchen unter Schutz gestellt. zueinander stehen, so daß der auf die verschiedenenare placed under protection in the subclaims. stand to each other, so that the on the different
Im folgenden wird die Erfindung unter Hinweis auf kleinen Kontaktflächen des Gitters 14 ausgeübte DruckIn the following, the invention will be described with reference to pressure exerted on small contact areas of the grid 14
die Zeichnung erläutert. In den Zeichnungen zeigt 45 im wesentlichen an allen diesen Kontaktflächen gleichthe drawing explains. In the drawings, 45 shows essentially the same on all of these contact surfaces
F i g. 1 einen Querschnitt in stark vergrößertem ist. Die Sehraubzwinge 24 wird so lange angezogen,F i g. 1 is a cross-section on a greatly enlarged scale. The visual clamp 24 is tightened until
Maßstab einer Anordnung zur Herstellung einer bis an den kleinen Kontaktflächen ein relativ hoherScale of an arrangement for the production of a relatively high up to the small contact areas
großflächigen Verbindung gemäß der vorliegenden Einheitsdruck herrscht, wobei dieser Druck so hochLarge-area connection according to the present unit pressure prevails, this pressure being so high
Erfindung, sein kann, daß die mit den Oberflächen der Teile 10Invention, can be that with the surfaces of the parts 10
F i g. 2 eine zum Teil schaubildliche Seitenansicht 5° und 12 in Berührung stehenden runden Teile derF i g. FIG. 2 shows a partially diagrammatic side view 5 ° and 12 in contact with round parts of FIG
einer Vorrichtung, die zur Herstellung einer Groß- Drähte verformt werden. Der somit an jeder dera device that is deformed to produce large wires. The thus at each of the
flächenverbindung gemäß der vorliegenden Erfindung kleinen Kontaktflächen des Gitters herrschende DruckSurface connection according to the present invention small contact areas of the grid prevailing pressure
verwendet werden kann, und ist so gewählt, daß bei einem nachfolgenden Er-can be used, and is chosen so that in a subsequent er
F i g. 3 einen Querschnitt in sehr stark vergrößertem wärmungsvorgang Thermo-Druckverbindungen entMaßstab des entstehenden Produkts. 55 stehen. Der Druck ist so gewählt, daß Thermo-Druck-F i g. 3 shows a cross-section in a very greatly enlarged heating process of thermal pressure connections to scale of the resulting product. 55 stand. The pressure is chosen so that thermal printing
In Fig. 1 ist eine Anordnung gezeigt, die ein verbindungen nicht zwischen den anderen Teilen derIn Fig. 1 an arrangement is shown which does not have a connections between the other parts of the
erstes Teil 10 aus festem Halbleitermaterial, z. B. Anordnung entstehen können.first part 10 made of solid semiconductor material, e.g. B. arrangement can arise.
Silicium, enthält. Das Silicium kann entweder in Mittels eines durch das leitende Teil 16 von derSilicon. The silicon can either by means of a through the conductive part 16 of the
reinem Zustand vorliegen oder in Form von dotiertem Quelle 36 her fließenden Stromes werden die mitein-in the pure state or in the form of a doped source 36 flowing current
p- oder η-leitendem Material. Das Teil 10 hat die 60 ander zu verbindenden Teile, nämlich die Teile 10,12p- or η-conductive material. The part 10 has the 60 parts to be connected to one another, namely the parts 10, 12
Form einer kleinen Platte. Ein zweites Teil 12 aus und 14 auf eine Temperatur erwärmt, bei der dieShape of a small plate. A second part 12 and 14 heated to a temperature at which the
festem Material, beispielsweise Molybdän, ist gegen- Thermo-Druckverbindungen erzeugt werden. Mansolid material, for example molybdenum, is to be produced against thermal pressure connections. Man
über dem Teil 10 angeordnet, und ein gewebtes Draht- unterbricht dann den Heizstrom und läßt dann die gitter 14 aus einem geeigneten verformbaren Metall Teile unter Druck und in der Atmosphäre unter der liegt zwischen den Teilen 10 und 12. Die gegenüber- 65 Glocke abkühlen. Danach wird die Glocke abgehoben liegenden Flächen der Teile 10 und 12 sind geläppt und die Schraubzwinge 24 geöffnet. Das endgültige oder poliert oder in anderer geeigneter Weise behandelt, Erzeugnis zeigt die F i g. 3 in stark vergrößertem um ebene, parallele Oberflächen zu erzeugen, und zur Maßstab; es besteht aus den zwei Teilen 10 und 12, dieplaced over the part 10, and a woven wire then interrupts the heating current and then leaves the grid 14 made of a suitable deformable metal parts under pressure and in the atmosphere under the lies between parts 10 and 12. Cool down the bell opposite. Then the bell is lifted lying surfaces of the parts 10 and 12 are lapped and the screw clamp 24 is open. The final one or polished or otherwise suitably treated, the product is shown in FIG. 3 in greatly enlarged to create flat, parallel surfaces, and to scale; it consists of the two parts 10 and 12, the
mit dem Gitter 14 durch eine große Anzahl von kleinflächigen Druckverbindungen 42 zwischen den Flächen der Teile 10 und 12 und den Drähten des Gitters verbunden sind. Es soll dabei festgestellt werden, daß die Drähte im allgemeinen winkelig zu den Oberflächen der Teile 10 und 12 verlaufen, so daß sich kurze biegsame oder nachgiebige Metalldrahtstücke 44 zwischen den Verbindungsstellen 42 ergeben. .to the grid 14 by a large number of small area pressure connections 42 between the surfaces of parts 10 and 12 and the wires of the grid are connected. It should be noted that the Wires are generally angled to the surfaces of parts 10 and 12 to make short bends or resilient pieces of metal wire 44 between the junctions 42. .
In einem speziellen Beispiel war das Teil 10 eine kleine Siliciumscheibe von 3,17 mm Durchmesser und 0,508 mm Dicke. Das Teil 12 war eine etwas größere Molybdänplatte von annähernd derselben Dicke, und das Teil 16 hatte eine Molybdänstreifen ähnliche Dicke. Das Gitter bestand aus Nickeldraht solcher Maschenweite, daß etwa 150 kleinfiächige Thermo-Druckver- bindungen auf der Fläche von 3,17 mm Durchmesser entstanden. Die Drähte des verwendeten Nickelgitters haben einen Durchmesser von etwa 0,05 mm, so daß die Größe der Drähte des Gitters 14 in der Zeichnung relativ zur Dicke der Teile 10 und 12 übertrieben dargestellt ist, soweit das vorliegende Beispiel betroffen ist. Für das Teil 12, das mit dem Siliciumteil 10 durch das Nickelgitter 14 und die Thermo-Druckverbindungen verbunden ist, wurde Molybdän gewählt, da der Wärmeausdehnungskoeffizient von Molybdän etwa dem des Siliciums gleicht.In a specific example, part 10 was a small silicon wafer 3.17 mm in diameter and 0.508 mm thick. Part 12 was a slightly larger molybdenum plate of approximately the same thickness, and part 16 was of a thickness similar to molybdenum. The grid consisted of nickel wire with such a mesh size that about 150 small-area thermal printing bonds were created on the area of 3.17 mm in diameter. The wires of the nickel mesh used have a diameter of about 0.05 mm, so that the size of the wires of the grid 14 in the drawing is exaggerated relative to the thickness of parts 10 and 12 as far as the present example is concerned is. For the part 12 that connects to the silicon part 10 through the nickel mesh 14 and the thermal pressure connections molybdenum was chosen because the coefficient of thermal expansion of molybdenum is roughly the same as that of silicon.
Verbindungen der vorbeschriebenen Art können jedoch zwischen Teilen mit beträchtlich größeren Differenzen zwischen deren Wärmeausdehnungskoeffizienten ausgeführt werden, wenn auch die Verbindung um so stabiler ist, je mehr sich die entsprechenden Wärmeausdehnungskoeffizienten einander nähern. Die Drahtabschnitte 44 des Gitters oder Geflechtes kompensieren Unterschiede in der Wärmeausdehnung.However, connections of the type described above can be used between parts with considerably larger Differences between their coefficients of thermal expansion are executed, albeit the connection the more stable it is, the closer the corresponding coefficients of thermal expansion approach one another. the Wire sections 44 of the grid or braid compensate for differences in thermal expansion.
In dem vorstehenden speziellen Beispiel wurde die Anordnung auf 6000C in einer Wasserstoffatmosphäre erhitzt und dann in 20 Minuten in dieser Atmosphäre abgekühlt, wonach die Anordnung von Druck entlastet wurde.In the above specific example, the arrangement was heated to 600 ° C. in a hydrogen atmosphere and then cooled in this atmosphere in 20 minutes, after which the pressure was released from the arrangement.
Die verwendeten Materialien sollten einen Schmelzpunkt aufweisen, der über 400° C liegt, vorzugsweise aber bei mindestens 1000° C liegt. Das Metall des Gitters kann ebenfalls aus einer großen Anzahl von Metallen ausgewählt werden, deren Schmelzpunkte, wie eben besprochen, genügend hoch liegen. Solche Metalle sind mindestens im geringen Ausmaß dehnbar oder verformbar, so daß sie leicht verformt werden, wenn sie zwischen den beiden zu vereinigenden Teilen gepreßt werden. Dafür kommen beispielsweise noch in Frage: Kupfer, Eisen, Platin, Gold oder Silber. Thermo-Druckverbindungen können abhängig von dem verwendeten Material bei Temperaturen in einem Bereich von etwa 400 bis 1000° C gebildet werden.The materials used should have a melting point above 400 ° C, preferably but is at least 1000 ° C. The metal of the grid can also consist of a large number of Metals are selected whose melting points, as just discussed, are sufficiently high. Such Metals are ductile or deformable at least to a small extent, so that they are easily deformed, when pressed between the two parts to be united. For this, for example, still come in question: copper, iron, platinum, gold or silver. Thermal pressure connections may depend on the material used at temperatures in the range of about 400 to 1000 ° C.
Claims (3)
Deutsche Auslegeschrift Nr. 1120 603;
österreichische Patentschrift Nr. 130 102;
schweizerische Patentschrift Nr. 307 776;
USA.-Patentschriften Nr. 1915 221, 2 290 554, 423 870, 2 595 052;
Maschinery, London, 3. August 1950, S. 138.Considered publications:
German Auslegeschrift No. 1120 603;
Austrian Patent No. 130 102;
Swiss Patent No. 307 776;
U.S. Patent Nos. 1915,221, 2,290,554, 423,870, 2,595,052;
Maschinery, London, August 3, 1950, p. 138.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US70784A US3153581A (en) | 1960-11-21 | 1960-11-21 | Large area connection for semiconductors and method of making |
Publications (1)
Publication Number | Publication Date |
---|---|
DE1208824B true DE1208824B (en) | 1966-01-13 |
Family
ID=22097373
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DET19883A Pending DE1208824B (en) | 1960-11-21 | 1961-03-30 | Method for producing an ohmic metallic contact electrode on a half-body of a semiconductor component |
Country Status (4)
Country | Link |
---|---|
US (1) | US3153581A (en) |
DE (1) | DE1208824B (en) |
GB (1) | GB973747A (en) |
NL (1) | NL264072A (en) |
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US4748483A (en) * | 1979-07-03 | 1988-05-31 | Higratherm Electric Gmbh | Mechanical pressure Schottky contact array |
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US3273029A (en) * | 1963-08-23 | 1966-09-13 | Hoffman Electronics Corp | Method of attaching leads to a semiconductor body and the article formed thereby |
US3406446A (en) * | 1963-10-29 | 1968-10-22 | Stephen A. Muldovan | Method of manufacturing laminated metal panel |
NL136731C (en) * | 1965-06-23 | |||
US3538593A (en) * | 1965-12-13 | 1970-11-10 | North American Rockwell | Method of making composite structure |
US3399332A (en) * | 1965-12-29 | 1968-08-27 | Texas Instruments Inc | Heat-dissipating support for semiconductor device |
US3615277A (en) * | 1969-05-02 | 1971-10-26 | United Aircraft Corp | Method of fabricating fiber-reinforced articles and products produced thereby |
DE2855493A1 (en) * | 1978-12-22 | 1980-07-03 | Bbc Brown Boveri & Cie | PERFORMANCE SEMICONDUCTOR COMPONENT |
US4529836A (en) * | 1983-07-15 | 1985-07-16 | Sperry Corporation | Stress absorption matrix |
JPS60127271A (en) * | 1983-12-14 | 1985-07-06 | 株式会社日立製作所 | Method of bonding non-oxide ceramics and metal |
DE3442537A1 (en) * | 1984-11-22 | 1986-05-22 | BBC Aktiengesellschaft Brown, Boveri & Cie., Baden, Aargau | METHOD FOR BUBBLE-FREE CONNECTING A LARGE SEMICONDUCTOR COMPONENT TO A SUBSTRATE COMPONENT BY SOLDERING |
GB8724817D0 (en) * | 1987-10-23 | 1987-11-25 | Chloride Silent Power Ltd | Constructing metal energy conversion device |
US5069978A (en) * | 1990-10-04 | 1991-12-03 | Gte Products Corporation | Brazed composite having interlayer of expanded metal |
US5403671A (en) * | 1992-05-12 | 1995-04-04 | Mask Technology, Inc. | Product for surface mount solder joints |
US5903059A (en) * | 1995-11-21 | 1999-05-11 | International Business Machines Corporation | Microconnectors |
US6087596A (en) * | 1997-12-04 | 2000-07-11 | Ford Motor Company | Solder joints for printed circuit boards having intermediate metallic member |
US6095400A (en) * | 1997-12-04 | 2000-08-01 | Ford Global Technologies, Inc. | Reinforced solder preform |
JP4085536B2 (en) * | 1998-11-09 | 2008-05-14 | 株式会社日本自動車部品総合研究所 | ELECTRIC DEVICE, ITS MANUFACTURING METHOD, AND PRESSURE SEMICONDUCTOR DEVICE |
DE102009022660B3 (en) * | 2009-05-26 | 2010-09-16 | Semikron Elektronik Gmbh & Co. Kg | Attachment of a component to a substrate and / or a connection element to the component and / or to the substrate by pressure sintering |
TWI461386B (en) * | 2011-06-10 | 2014-11-21 | High strength alumina and stainless steel metal bonding method | |
DE102013219990B4 (en) * | 2013-10-02 | 2022-01-13 | Robert Bosch Gmbh | Connection assembly with a thermocompression bonded connection means and method |
US20170239757A1 (en) * | 2016-02-22 | 2017-08-24 | Siemens Energy, Inc. | Brazing gap spacing apparatus and method |
EP4011539A4 (en) * | 2019-08-05 | 2023-08-09 | Nihon Superior Co., Ltd. | Solder-metal mesh composite material and method for producing same |
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-
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Also Published As
Publication number | Publication date |
---|---|
US3153581A (en) | 1964-10-20 |
GB973747A (en) | 1964-10-28 |
NL264072A (en) | 1900-01-01 |
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