DE1202909B - Zum quantitativen und qualitativen Nachweis von Neutronenstrahlen dienender Halbleiterkoerper und Verfahren zu seiner Herstellung - Google Patents
Zum quantitativen und qualitativen Nachweis von Neutronenstrahlen dienender Halbleiterkoerper und Verfahren zu seiner HerstellungInfo
- Publication number
- DE1202909B DE1202909B DEL24518A DEL0024518A DE1202909B DE 1202909 B DE1202909 B DE 1202909B DE L24518 A DEL24518 A DE L24518A DE L0024518 A DEL0024518 A DE L0024518A DE 1202909 B DE1202909 B DE 1202909B
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor body
- vol
- layer
- quantitative
- neutron beams
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 23
- 238000000034 method Methods 0.000 title claims description 9
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 238000001514 detection method Methods 0.000 title description 4
- 230000008569 process Effects 0.000 title description 4
- 230000005855 radiation Effects 0.000 claims description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 229910052796 boron Inorganic materials 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims description 2
- 239000007789 gas Substances 0.000 claims description 2
- 239000001307 helium Substances 0.000 claims description 2
- 229910052734 helium Inorganic materials 0.000 claims description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 2
- 230000001681 protective effect Effects 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 239000002019 doping agent Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 6
- 230000009466 transformation Effects 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical group [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 231100000289 photo-effect Toxicity 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000000844 transformation Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T3/00—Measuring neutron radiation
- G01T3/08—Measuring neutron radiation with semiconductor detectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- High Energy & Nuclear Physics (AREA)
- Molecular Biology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEL24518A DE1202909B (de) | 1956-04-05 | 1956-04-05 | Zum quantitativen und qualitativen Nachweis von Neutronenstrahlen dienender Halbleiterkoerper und Verfahren zu seiner Herstellung |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEL24518A DE1202909B (de) | 1956-04-05 | 1956-04-05 | Zum quantitativen und qualitativen Nachweis von Neutronenstrahlen dienender Halbleiterkoerper und Verfahren zu seiner Herstellung |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE1202909B true DE1202909B (de) | 1965-10-14 |
| DE1202909C2 DE1202909C2 (enrdf_load_stackoverflow) | 1966-05-12 |
Family
ID=7263110
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEL24518A Granted DE1202909B (de) | 1956-04-05 | 1956-04-05 | Zum quantitativen und qualitativen Nachweis von Neutronenstrahlen dienender Halbleiterkoerper und Verfahren zu seiner Herstellung |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE1202909B (enrdf_load_stackoverflow) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB692337A (en) * | 1951-10-24 | 1953-06-03 | Standard Telephones Cables Ltd | Improvements in or relating to electron beam tube arrangements |
| US2669635A (en) * | 1952-11-13 | 1954-02-16 | Bell Telephone Labor Inc | Semiconductive photoelectric transducer |
| DE919126C (de) * | 1941-03-12 | 1954-10-14 | Aeg | Einrichtung zur Registrierung der Intensitaet einer Neutronenstrahlung |
| US2695852A (en) * | 1952-02-15 | 1954-11-30 | Bell Telephone Labor Inc | Fabrication of semiconductors for signal translating devices |
| DE1014670B (de) | 1955-03-18 | 1957-08-29 | Siemens Ag | Geraet zur Erfassung von Neutronen mit einem Halbleiter |
-
1956
- 1956-04-05 DE DEL24518A patent/DE1202909B/de active Granted
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE919126C (de) * | 1941-03-12 | 1954-10-14 | Aeg | Einrichtung zur Registrierung der Intensitaet einer Neutronenstrahlung |
| GB692337A (en) * | 1951-10-24 | 1953-06-03 | Standard Telephones Cables Ltd | Improvements in or relating to electron beam tube arrangements |
| US2695852A (en) * | 1952-02-15 | 1954-11-30 | Bell Telephone Labor Inc | Fabrication of semiconductors for signal translating devices |
| US2669635A (en) * | 1952-11-13 | 1954-02-16 | Bell Telephone Labor Inc | Semiconductive photoelectric transducer |
| DE1014670B (de) | 1955-03-18 | 1957-08-29 | Siemens Ag | Geraet zur Erfassung von Neutronen mit einem Halbleiter |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1202909C2 (enrdf_load_stackoverflow) | 1966-05-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Hall et al. | P− N Junctions Prepared by Impurity Diffusion | |
| DE2153559A1 (de) | Neutronen- und Gamma-Fluß-Detektor | |
| Tewes et al. | Proton Induced Reactions of Thorium—Fission Yield Curves | |
| DE2951925A1 (de) | Verfahren zur herstellung von halbleiteranordnungen | |
| DE2755418A1 (de) | Verfahren zur herstellung eines halbleiter-bauelements | |
| Mary et al. | Deep-level transient spectroscopy studies of U-irradiated silicon | |
| DE1202909B (de) | Zum quantitativen und qualitativen Nachweis von Neutronenstrahlen dienender Halbleiterkoerper und Verfahren zu seiner Herstellung | |
| DE3740174A1 (de) | Strahlungsanalysator mit josephson-uebergang | |
| Hardy Jr et al. | The Resonance Fission Integrals of U235, Pu239, and Pu241 | |
| Izak-Biran et al. | Independent yields of fast-neutron fission of Th 232: Observation of proton odd-even effect and neutron shell effect on the yields | |
| DE3537802A1 (de) | Halbleiterdetektor zum feststellen thermischer neutronen | |
| DE2157741A1 (de) | Neutronendetektor | |
| DE1589527A1 (de) | Halbleiter-Dosimeter | |
| Salamon et al. | Cluster formation during irradiation with 2 MeV electrons | |
| Sunyar | Measurement of Some Internal Conversion Coefficients | |
| Sawh et al. | Uranium fission fragment pinning centers in melt-textured YBCO | |
| North et al. | Length Change of Electron-Irradiated Germanium | |
| von Wimmersperg et al. | Proton-induced giant halos in mica from inclusions containing water | |
| DE1014670B (de) | Geraet zur Erfassung von Neutronen mit einem Halbleiter | |
| DE2436490C3 (de) | Verfahren zur Phosphor-Dotierung von schwach n-leitenden Siliciumkör- | |
| Mowatt | Effective neutron capture cross section and half-life of 155Eu | |
| Pasternak et al. | Decay of Br83 | |
| DE3511363A1 (de) | Verfahren zum herstellen von bereichen mit einstellbarer, gleichfoermiger dotierung in siliziumkristallscheiben durch neutronenbestrahlung sowie verwendung dieses verfahrens zur herstellung von leistungsthyristoren | |
| Todorović et al. | The cross sections for the binary and ternary fission of thorium induced by 14, 18, and 23 GeV protons | |
| DE1232275B (de) | Halbleiter-Strahlungsdetektor aus einer A -B-Verbindung fuer die Gamma-Spektroskopie |