DE1202909B - For the quantitative and qualitative detection of neutron beams serving semiconductor bodies and process for its production - Google Patents
For the quantitative and qualitative detection of neutron beams serving semiconductor bodies and process for its productionInfo
- Publication number
- DE1202909B DE1202909B DEL24518A DEL0024518A DE1202909B DE 1202909 B DE1202909 B DE 1202909B DE L24518 A DEL24518 A DE L24518A DE L0024518 A DEL0024518 A DE L0024518A DE 1202909 B DE1202909 B DE 1202909B
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor body
- vol
- layer
- quantitative
- neutron beams
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 23
- 238000000034 method Methods 0.000 title claims description 9
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 238000001514 detection method Methods 0.000 title description 4
- 230000008569 process Effects 0.000 title description 4
- 230000005855 radiation Effects 0.000 claims description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 229910052796 boron Inorganic materials 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims description 2
- 239000007789 gas Substances 0.000 claims description 2
- 239000001307 helium Substances 0.000 claims description 2
- 229910052734 helium Inorganic materials 0.000 claims description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 2
- 230000001681 protective effect Effects 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 239000002019 doping agent Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 6
- 230000009466 transformation Effects 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical group [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 231100000289 photo-effect Toxicity 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000000844 transformation Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T3/00—Measuring neutron radiation
- G01T3/08—Measuring neutron radiation with semiconductor detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
Description
Zum quantitativen und qualitativen Nachweis von Neutronenstrahlen dienender Halbleiterkörper und Verfahren zu seiner Herstellung Bei Kernumwandlungen, sei es bei solchen, die beim Strahlen von Materie oder aber bei durch Beschuß mit Kernbauteilen herbeigeführten kernphysikalischen Umsetzungen stattfinden, treten Strahlungen auf, deren qualitative und quantitative Erfassung von besonderer Wichtigkeit ist. Man hat dazu bereits eine Reihe von Nachweisgeräten entwickelt. Es sind in älterer Zeit zu diesem Zweck Szintillationszähler, Spitzenzähler oder auch auf die Strahlung ansprechende photographische Filme benutzt worden.For the quantitative and qualitative detection of neutron beams Serving semiconductor body and process for its production In the case of nuclear transformations, be it with those who blast matter or with bombardment with Core components brought about core physical implementations take place Radiations, the qualitative and quantitative recording of which is of particular importance is. A number of detection devices have already been developed for this purpose. There are in older times for this purpose scintillation counters, peak counters or even on the Radiation responsive photographic films have been used.
In neuerer Zeit hat sich jedoch allgemein die Anwendung von Zählrohren durchgesetzt. Zählrohre haben aber den Nachteil, daß sowohl bei ihrer Herstellung als auch bei ihrer Anwendung ein außerordentlich hoher technischer Aufwand erforderlich ist. Sie sind weiterhin in der Handhabung außerordentlich empfindlich gegen störende Einflüsse. Auch sind zum qualitativen und quantitativen Nachweis von Neutronen strahlen sowie zum direkten Umsetzen dieser Strahlung in elektrische Energie dienende Halbleiterkörper aus Silizium oder Germanium mit einem pn-tJbergang bekannt. Von diesem bekannten Halbleiterkörper geht die Erfindung aus. Sie besteht darin, daß die der Strahlung auszusetzende Oberfläche des n-leitenden Halbleiterkörpers eine durch Dotierung mit Aluminium p-leitende Schicht aufweist. Aus Ausgangskörper dient dabei ein n-leitender Halbleiterkörper. Auf diesem wird an der der Strahlung auszusetzenden Oberfläche durch Aluminium eine p-Leitfähigkeit erzeugt. Es ist bereits bekannt, derartige pn-Übergänge zur Erzeugung eines Photoeffektes auszunutzen, jedoch tritt dieser Photoeffekt ohne Kernumwandlung in dem betreffenden pn-Übergang auf. Beim Erfindungsgegenstand wird dagegen von einer in der durch Einlagerung erzeugten Oberflächenschicht erfolgenden Kernumwandlung der Einlagerungsatome infolge der Einstrahlung von Neutronen Gebrauch gemacht. Halbleiterkörper aus Silizium oder Germanium mit einem pn-Übergang. bei denen die Oberfläche des n-leitenden Halbleiterkörpers eine durch Dotierung mit Aluminium p-leitende Schicht aufweist, sind bereits zum Messen von Alpha-, Beta-, Röntgen- oder Gamma strahlung benutzt worden. In recent times, however, the use of counter tubes has become general enforced. But counting tubes have the disadvantage that both in their manufacture as well as in their application an extraordinarily high technical effort is required is. They are also extremely sensitive to disruptive handling Influences. There are also rays for the qualitative and quantitative detection of neutrons as well as semiconductor bodies used to convert this radiation directly into electrical energy known from silicon or germanium with a pn-j transition. From this well-known The invention is based on semiconductor bodies. It consists in that of radiation to be exposed surface of the n-conductive semiconductor body by doping with aluminum p-type layer. An n-type conductor is used from the output body Semiconductor body. This is on the surface to be exposed to the radiation p-conductivity generated by aluminum. It is already known such To use pn junctions to generate a photo effect, but this occurs Photoelectric effect without nuclear conversion in the relevant pn junction. With the subject matter of the invention on the other hand, is effected by a surface layer created by incorporation Nuclear transformation of the inclusion atoms as a result of the radiation of neutrons use made. Semiconductor body made of silicon or germanium with a pn junction. at which the surface of the n-conducting semiconductor body is doped with Aluminum has a p-type layer, are already used to measure alpha, beta, X-ray or gamma radiation has been used.
Für Neutronen mit einer Energie von mehr als 3 MeV ist es jedoch von besonderem Vorteil, Al27 in die Oberfläche des Halbleiterkörpers einzulagern. However, it is for neutrons with an energy greater than 3 MeV It is particularly advantageous to store Al27 in the surface of the semiconductor body.
Bei der Bestrahlung von Aluminium mit Neutronen wird ein sehr kurzlebiger Magnesiumkern gebildet, der sofort wiederum in Aluminium zerfällt. Es werden dabei Protonen und Elektronen frei, die den gewünschten Strom innerhalb des Halbleiterkörpers er- zeugen. Der dabei eintretende Vorgang läßt sich folgendermaßen darstellen: 17A11, (n, p)27Mg; 3. 2AI Wenn Neutronenstrahlen mit einem breiteren Energiespektrum zur Einstrahlung benutzt werden, kann es von Vorteil sein, in der Oberfläche des Halbleiterkörpers neben Aluminium auch noch Bor zu verwenden. When aluminum is irradiated with neutrons, a very short-lived one becomes Magnesium core is formed, which in turn breaks down immediately into aluminum. It will be there Protons and electrons set free that the desired current within the semiconductor body he- witness. The process involved can be represented as follows: 17A11, (n, p) 27Mg; 3. 2AI When neutron beams with a broader energy spectrum are used Irradiation is used, it can be advantageous in the surface of the semiconductor body to use boron in addition to aluminum.
Zum Herstellen des Halbleiterkörpers nach der Erfindung eignet sich besonders ein Verfahren, bei dem im Hochvakuum auf einen Teil der Oberfläche des Halbleiterkörpers eine Schicht des einzulagernden Elementes aufgedampft und während einer Zeitdauer von einigen Minuten bei einer Temperatur von mehr als 5000 C behandelt wird. Bei diesem Verfahren läßt sich die Dicke der an der Oberfläche des Halbleiterkörpers zu erzeugenden Schicht besonders gut regeln, so daß die erzeugten Halbleiterkörper dem vorgesehenen Verwendungszweck hinsichtlich des Energiegehaltes der eingestellten Strahlung besonders gut angepaßt werden können. Is suitable for producing the semiconductor body according to the invention especially a process in which in a high vacuum on part of the surface of the Semiconductor body vapor-deposited a layer of the element to be embedded and during treated for a period of a few minutes at a temperature of more than 5000 C. will. In this method, the thickness of the on the surface of the semiconductor body regulate the layer to be produced particularly well, so that the semiconductor bodies produced the intended use with regard to the energy content of the set Radiation can be adapted particularly well.
Bei der Ausübung des genannten Verfahrens ist es von besonderem Vorteil, die Temperaturbehandlung unter Schutzgas, z. B. unter Argon oder Helium, vorzunehmen, um beispielsweise die Oxydation der einzulagenden, häufig sehr oxydationsfreudigen Elemente zu verhindern. When carrying out the procedure mentioned, it is of particular advantage the temperature treatment under protective gas, e.g. B. under argon or helium, For example, the oxidation of those to be deposited, which are often very oxidative Elements to prevent.
Die Kontaktierung des umgewandelten Bereiches des Halbleiterkörpers erfolgt mit Vorteil mit Silberpaste in Rasterform. Damit wird bezweckt, daß ein möglichst großer Teil der Oberfläche frei bleibt, um für die Einstrahlung zur Verfügung zu stehen. Die Kontaktierung des Halbleiterkörpers erfolgt in bekannter Weise unter Vermeidung einer Sperrschichtbildung. The contacting of the converted area of the semiconductor body is advantageously done with silver paste in grid form. The purpose of this is that a if possible large part of the surface remains free in order to be available for radiation stand. The semiconductor body is contacted in a known manner under Avoidance of barrier formation.
Um die Querleitfähigkeit des umgewandelten Bereiches an der Oberfläche des Halbleiterkörpers heraufzusetzen, kann durch die Wahl der Schichtdicke des aufgedampften Materials und/oder der Temperaturbehandlung erreicht werden, daß an der bedampften Oberfläche eine Schicht verbleibt, die metallisch oder quasimetallisch leitend ist. About the transverse conductivity of the converted area on the surface of the semiconductor body can be increased by the choice of the layer thickness of the vapor-deposited Material and / or the temperature treatment can be achieved that at the vaporized A layer remains on the surface, which is metallic or quasi-metallic conductive.
Claims (6)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEL24518A DE1202909B (en) | 1956-04-05 | 1956-04-05 | For the quantitative and qualitative detection of neutron beams serving semiconductor bodies and process for its production |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEL24518A DE1202909B (en) | 1956-04-05 | 1956-04-05 | For the quantitative and qualitative detection of neutron beams serving semiconductor bodies and process for its production |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE1202909B true DE1202909B (en) | 1965-10-14 |
| DE1202909C2 DE1202909C2 (en) | 1966-05-12 |
Family
ID=7263110
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEL24518A Granted DE1202909B (en) | 1956-04-05 | 1956-04-05 | For the quantitative and qualitative detection of neutron beams serving semiconductor bodies and process for its production |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE1202909B (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB692337A (en) * | 1951-10-24 | 1953-06-03 | Standard Telephones Cables Ltd | Improvements in or relating to electron beam tube arrangements |
| US2669635A (en) * | 1952-11-13 | 1954-02-16 | Bell Telephone Labor Inc | Semiconductive photoelectric transducer |
| DE919126C (en) * | 1941-03-12 | 1954-10-14 | Aeg | Device for registering the intensity of neutron radiation |
| US2695852A (en) * | 1952-02-15 | 1954-11-30 | Bell Telephone Labor Inc | Fabrication of semiconductors for signal translating devices |
-
1956
- 1956-04-05 DE DEL24518A patent/DE1202909B/en active Granted
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE919126C (en) * | 1941-03-12 | 1954-10-14 | Aeg | Device for registering the intensity of neutron radiation |
| GB692337A (en) * | 1951-10-24 | 1953-06-03 | Standard Telephones Cables Ltd | Improvements in or relating to electron beam tube arrangements |
| US2695852A (en) * | 1952-02-15 | 1954-11-30 | Bell Telephone Labor Inc | Fabrication of semiconductors for signal translating devices |
| US2669635A (en) * | 1952-11-13 | 1954-02-16 | Bell Telephone Labor Inc | Semiconductive photoelectric transducer |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1202909C2 (en) | 1966-05-12 |
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