DE1171995B - Process for applying photo elements to non-conductive carriers - Google Patents
Process for applying photo elements to non-conductive carriersInfo
- Publication number
- DE1171995B DE1171995B DEJ22797A DEJ0022797A DE1171995B DE 1171995 B DE1171995 B DE 1171995B DE J22797 A DEJ22797 A DE J22797A DE J0022797 A DEJ0022797 A DE J0022797A DE 1171995 B DE1171995 B DE 1171995B
- Authority
- DE
- Germany
- Prior art keywords
- substances
- flux
- conductive
- layer
- monovalent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 13
- 239000000969 carrier Substances 0.000 title 1
- 239000000126 substance Substances 0.000 claims description 15
- 239000002019 doping agent Substances 0.000 claims description 7
- 230000004907 flux Effects 0.000 claims description 7
- 239000002002 slurry Substances 0.000 claims description 5
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 3
- 238000001962 electrophoresis Methods 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 229910004613 CdTe Inorganic materials 0.000 claims description 2
- 150000005846 sugar alcohols Polymers 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 16
- 238000005507 spraying Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 3
- YKYOUMDCQGMQQO-UHFFFAOYSA-L cadmium dichloride Chemical compound Cl[Cd]Cl YKYOUMDCQGMQQO-UHFFFAOYSA-L 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000000265 homogenisation Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000001652 electrophoretic deposition Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02491—Conductive materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Light Receiving Elements (AREA)
Description
Verfahren zum Aufbringen von Fotoelementen auf nichtleitende Träger Die Erfindung betrifft ein Verfahren zur Herstellung eines Fotoelementes auf einem mit einer leitenden Schicht versehenen nichtleitenden Träger.Process for applying photo elements to non-conductive substrates The invention relates to a method for producing a photo element on a non-conductive support provided with a conductive layer.
Es ist bekannt, polykristalline fotoleitende Substanzen zusammen mit den erforderlichen Fluß- und Dotierungsmitteln durch Siebdruck oder Aufsprühen auf entsprechend mit Kontakten und Leitungen versehene nichtleitende Trägerschichten für gedruckte Schaltungen aufzubringen und anschließend durch thermische Behandlung zu verfestigen bzw. zu formieren. Dieses Verfahren hat aber den Nachteil, daß das dabei erforderliche Homogenisieren und Mischen der Substanzen sehr umständlich ist und sehr große Sorgfalt erfordert, wenn eine gute Reproduzierbarkeit der hergestellten Fotohalbleiter gewährleistet werden soll. Darüber hinaus ist bei diesem Verfahren, insbesondere bei kleinen Stückzahlen, eine gewisse Materialvergeudung nicht zu vermeiden, da sowohl beim Homogenisieren der Substanzen als auch bei dem sich anschließenden Druckverfahren bzw. Sprühen Rückstände übrigbleiben. Bekanntlich gelangt sowohl beim Siebdruck als auch beim Sprühen nur ein Bruchteil der beim Verfahren erforderlichen Substanzen an die vorgesehenen Bereiche. Es ist zwar möglich, die sich auf den verwendeten Masken, Sieben od. dgl. absetzenden Substanzen zur weiteren Verwendung heranzuziehen. Diese Substanzen müssen aber, insbesondere wenn sie auch flüchtige Materialien enthalten, sorgfältig aufbereitet werden, wenn die einzelnen Elemente gut reproduzierbar sein sollen. Aus den oben angeführten Gründen sind diese Verfahren kostspielig und umständlich.It is known to use polycrystalline photoconductive substances along with the required flux and doping agents by screen printing or spraying on corresponding non-conductive carrier layers provided with contacts and lines to apply for printed circuits and then by thermal treatment to solidify or to form. However, this method has the disadvantage that the required homogenization and mixing of the substances is very cumbersome and requires very great care when producing good reproducibility Photo semiconductors should be guaranteed. In addition, in this process, especially with small quantities, not to avoid a certain waste of material, because both during the homogenization of the substances and during the subsequent process Printing process or spraying residues remain. It is well known that both in screen printing and spraying only a fraction of what is required in the process Substances to the designated areas. While it is possible to rely on the used Masks, sieves or the like. Deposing substances to be used for further use. However, these substances must, especially if they also contain volatile materials, carefully prepared if the individual elements can be reproduced easily should. For the reasons given above, these methods are costly and cumbersome.
Um diese Nachteile zu vermeiden, wird ein Verfahren zur Herstellung eines Fotoelementes auf einem mit einer leitenden Schicht versehenen nichtleitenden Träger angegeben, bei dem gemäß der Erfindung die fotoleitende Substanz mit Fluß- und Dotierungsmitteln durch Elektrophorese einer kolloidalen Lösung dieser Stoffe niedergeschlagen wird.In order to avoid these disadvantages, a method for manufacturing a photo element on a non-conductive layer provided with a conductive layer Specified carrier in which, according to the invention, the photoconductive substance with flux and dopants by electrophoresis of a colloidal solution of these substances being knocked down.
Dieses Verfahren hat eine ganze Reihe von Vorteilen. So entfallen z. B. die mit dem Druck- oder Sprühverfahren zwangläufig verbundenen Materialverluste. Die Schichtdicken der aufgebrachten fotoleitenden Elemente einschließlich der eingelagerten Fluß- und Dotiermittel lassen sich durch Wahl der Abscheidungsspannung und der Dauer der Abscheidung sehr genau einhalten. Die Reproduzierbarkeit der Fotoelemente ist daher sehr gut.This method has a number of advantages. So omitted z. B. the material losses inevitably associated with the printing or spraying process. The layer thicknesses of the applied photoconductive elements including the embedded ones Flux and dopants can be determined by choosing the deposition voltage and duration strictly adhere to the separation. The reproducibility of the photo elements is therefore very good.
Gemäß einer besonders vorteilhaften Ausführungsform des Erfindungsgedankens besteht die die abzulagernden Substanzen enthaltende Aufschlämmung aus etwa 60 % einer organischen Flüssigkeit, wie C"H50H, oder anderen mit Wasser homogene Lösungen bildenden einwertigen oder mehrwertigen Alkoholen, etwa 10 % H20, etwa 25 % feinstsuspendierter fotoleitender Substanz, wie CdSe, CdS, CdTe, von etwa 5 bis 10 w Korngröße und höchstens 5 0/0 eines Fluß- und Dotierungsmittels, wie CdC12. Die angegebene Aufschlämmung eignet sich besonders gut für die elektrophoretische Abscheidung. Die in der Flüssigkeit suspendierten Teilchen können restlos abgeschieden werden, so daß keine Materialverluste entstehen. Das als Fluß- und Dotierungsmittel dienende CdC12 kann durch geeignete Steuerung der thermischen Nachbehandlung im erforderlichen Ausmaß entfernt werden.According to a particularly advantageous embodiment of the inventive concept the slurry containing the substances to be deposited consists of about 60% an organic liquid such as C "H50H, or other solutions homogeneous with water forming monohydric or polyhydric alcohols, about 10% H20, about 25% finely suspended photoconductive substance, such as CdSe, CdS, CdTe, from about 5 to 10 w grain size and at most 50/0 of a flux and dopant such as CdC12. The specified slurry is particularly suitable for electrophoretic deposition. The ones in the liquid suspended particles can be separated out completely, so that no material losses develop. The CdC12 serving as a flux and dopant can be modified by suitable means Control of the thermal aftertreatment can be removed to the extent necessary.
Gemäß einer weiteren vorteilhaften Ausführungsform des Erfindungsgedankens sind die als Elektroden dienenden leitenden Schichten ganz oder teilweise lichtdurchlässig. Dies kann entweder durch eine entsprechend dünne Ausbildung dieser Schichten oder durch deren Ausbildung als Loch-Sieb-Rasterplatten erreicht werden.According to a further advantageous embodiment of the inventive concept the conductive layers serving as electrodes are completely or partially translucent. This can either be achieved by making these layers correspondingly thin or can be achieved by training them as perforated screen grid plates.
Die Erfindung wird anschließend an Hand der Figur näher erläutert. Auf die aus isolierendem Material bestehende Platte 1 wird die Elektrode 2 durch Aufdampfen einer dünnen Goldschicht aufgebracht. Die Schichtdicken sowie auch die anderen Abmessungen sind in der Figur der besseren Darstellbarkeit wegen stark übertrieben wiedergegeben. Tatsächlich kommen Schichtdicken der Elektroden 2 und 3 von einigen Mikron und der fotoelektrischen Schicht von etwa 10 bis 30 j in Frage. Die Platte 1 mit der aufgedampften Elektrode 2 wird in eine Aufschlämmung aus 600% C2H50H, 10% Glycerin, 28% feinstsuspendiertem CdSe von 5 j. Korngröße und 2% CdCI2 eingebracht. Anschließend wird durch Verbinden der Elektroden 2 und 10 mit einer Spannungsquelle ein elektrisches Feld erzeugt, unter dessen Wirkung die suspendierten Substanzen durch Elektrophorese auf der Elektrode 2 abgelagert werden. Bei einer vorgegebenen Beschaffenheit der Aufschlämmung und bei vorgegebenen Formen mit Abständen der Elektroden 2 und 10 ist die Dicke der abgelagerten Schicht 4 proportional der Zeit und der Spannung.The invention will then be explained in more detail with reference to the figure. The electrode 2 is applied to the plate 1 made of insulating material by vapor deposition of a thin gold layer. The layer thicknesses and also the other dimensions are shown greatly exaggerated in the figure for the sake of better illustration. Layer thicknesses of the electrodes 2 and 3 of a few microns and the photoelectric layer of about 10 to 30 j are actually possible. The plate 1 with the vapor-deposited electrode 2 is immersed in a slurry of 600% C2H50H, 10% glycerol, 28% finely suspended CdSe of 5 j. Grain size and 2% CdCl2 introduced. Subsequently, by connecting the electrodes 2 and 10 to a voltage source, an electric field is generated, under the effect of which the suspended substances are deposited on the electrode 2 by electrophoresis. For a given composition of the slurry and given shapes with the electrodes 2 and 10 spaced, the thickness of the deposited layer 4 is proportional to the time and the voltage.
Nachdem die Schicht 4 bei etwa 600° C gesintert und formiert wurde, wird sie durch Aufsprühen von Aluminiumoxyd in eine Schutzschicht 5 eingebettet, die nur ihre obere Fläche bzw. einen Teil davon frei läßt. Anschließend wird die Elektrode 3, die nur einen Teil der freien Fläche der fotoleitenden Schicht 4 bedeckt, durch Aufdampfen einer dünnen Goldschicht erzeugt. Soll die Elektrode 3 die ganze obere Fläche der Schicht 4 bedecken, so muß sie lichtdurchlässig sein, was durch geeignete Wahl ihrer Dicke erreicht werden kann.After the layer 4 has been sintered and formed at about 600 ° C., it is embedded in a protective layer 5 by spraying on aluminum oxide, which leaves only its upper surface or part of it exposed. The electrode 3, which covers only part of the free area of the photoconductive layer 4 , is then produced by vapor deposition of a thin gold layer. If the electrode 3 is to cover the entire upper surface of the layer 4, it must be transparent, which can be achieved by a suitable choice of its thickness.
Claims (3)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEJ22797A DE1171995B (en) | 1962-02-08 | 1962-02-08 | Process for applying photo elements to non-conductive carriers |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEJ22797A DE1171995B (en) | 1962-02-08 | 1962-02-08 | Process for applying photo elements to non-conductive carriers |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1171995B true DE1171995B (en) | 1964-06-11 |
Family
ID=7201144
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEJ22797A Pending DE1171995B (en) | 1962-02-08 | 1962-02-08 | Process for applying photo elements to non-conductive carriers |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE1171995B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1220034B (en) * | 1964-07-28 | 1966-06-30 | Reinhausen Maschf Scheubeck | Switching arrangement for diverter switches of tap changers in regulating transformers |
| FR2352078A1 (en) * | 1976-05-17 | 1977-12-16 | Ici Ltd | PROCESS FOR PREPARING STITCH-FREE FILMS FOR SOLAR BATTERIES |
| EP0002109A1 (en) * | 1977-11-15 | 1979-05-30 | Imperial Chemical Industries Plc | A method for the preparation of thin photoconductive films and of solar cells employing said thin photoconductive films |
-
1962
- 1962-02-08 DE DEJ22797A patent/DE1171995B/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1220034B (en) * | 1964-07-28 | 1966-06-30 | Reinhausen Maschf Scheubeck | Switching arrangement for diverter switches of tap changers in regulating transformers |
| FR2352078A1 (en) * | 1976-05-17 | 1977-12-16 | Ici Ltd | PROCESS FOR PREPARING STITCH-FREE FILMS FOR SOLAR BATTERIES |
| EP0002109A1 (en) * | 1977-11-15 | 1979-05-30 | Imperial Chemical Industries Plc | A method for the preparation of thin photoconductive films and of solar cells employing said thin photoconductive films |
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