DE1171534B - Flaechen-Vierzonentransistor mit einer Stromverstaerkung groesser als eins, insbesondere fuer Schaltzwecke - Google Patents
Flaechen-Vierzonentransistor mit einer Stromverstaerkung groesser als eins, insbesondere fuer SchaltzweckeInfo
- Publication number
- DE1171534B DE1171534B DEJ18304A DEJ0018304A DE1171534B DE 1171534 B DE1171534 B DE 1171534B DE J18304 A DEJ18304 A DE J18304A DE J0018304 A DEJ0018304 A DE J0018304A DE 1171534 B DE1171534 B DE 1171534B
- Authority
- DE
- Germany
- Prior art keywords
- zone
- transistor
- alloy
- pill
- lead
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000006187 pill Substances 0.000 claims description 36
- 239000004065 semiconductor Substances 0.000 claims description 35
- 229910045601 alloy Inorganic materials 0.000 claims description 23
- 239000000956 alloy Substances 0.000 claims description 23
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 20
- 229910052733 gallium Inorganic materials 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 16
- 229910052732 germanium Inorganic materials 0.000 claims description 15
- 229910052787 antimony Inorganic materials 0.000 claims description 14
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 14
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 13
- 229910052738 indium Inorganic materials 0.000 claims description 9
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 9
- 229910000807 Ga alloy Inorganic materials 0.000 claims description 5
- 230000003321 amplification Effects 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 4
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 4
- 230000015556 catabolic process Effects 0.000 description 15
- 238000002347 injection Methods 0.000 description 12
- 239000007924 injection Substances 0.000 description 12
- 230000004888 barrier function Effects 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 4
- 230000001788 irregular Effects 0.000 description 4
- 238000004804 winding Methods 0.000 description 4
- 229910001245 Sb alloy Inorganic materials 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000002140 antimony alloy Substances 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000008054 signal transmission Effects 0.000 description 3
- 239000007858 starting material Substances 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 239000012876 carrier material Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000007667 floating Methods 0.000 description 2
- 238000007373 indentation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000000866 electrolytic etching Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000013641 positive control Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000009416 shuttering Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
- H03K17/73—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for dc voltages or currents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Thyristors (AREA)
- Electronic Switches (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US822385A US3241012A (en) | 1959-06-23 | 1959-06-23 | Semiconductor signal-translating device |
| US25385A US3211971A (en) | 1959-06-23 | 1960-04-28 | Pnpn semiconductor translating device and method of construction |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1171534B true DE1171534B (de) | 1964-06-04 |
Family
ID=26699677
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEJ18304A Pending DE1171534B (de) | 1959-06-23 | 1960-06-21 | Flaechen-Vierzonentransistor mit einer Stromverstaerkung groesser als eins, insbesondere fuer Schaltzwecke |
| DEJ19829A Pending DE1194061B (de) | 1959-06-23 | 1961-04-27 | Verfahren zum Herstellen eines Flaechen-Vierzonentransistors und Anwendung eines nach diesem Verfahren hergestellten Transistors |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEJ19829A Pending DE1194061B (de) | 1959-06-23 | 1961-04-27 | Verfahren zum Herstellen eines Flaechen-Vierzonentransistors und Anwendung eines nach diesem Verfahren hergestellten Transistors |
Country Status (5)
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL290680A (US07655746-20100202-C00011.png) * | 1962-06-19 | |||
| NL302113A (US07655746-20100202-C00011.png) * | 1963-02-26 | |||
| US3319311A (en) * | 1963-05-24 | 1967-05-16 | Ibm | Semiconductor devices and their fabrication |
| US3324359A (en) * | 1963-09-30 | 1967-06-06 | Gen Electric | Four layer semiconductor switch with the third layer defining a continuous, uninterrupted internal junction |
| US3500133A (en) * | 1964-01-21 | 1970-03-10 | Danfoss As | Electrically controlled switch and switching arrangement |
| US3504239A (en) * | 1964-01-31 | 1970-03-31 | Rca Corp | Transistor with distributed resistor between emitter lead and emitter region |
| US3341749A (en) * | 1964-08-10 | 1967-09-12 | Ass Elect Ind | Four layer semiconductor devices with improved high voltage characteristics |
| US5445974A (en) * | 1993-03-31 | 1995-08-29 | Siemens Components, Inc. | Method of fabricating a high-voltage, vertical-trench semiconductor device |
| RU2433282C2 (ru) | 2010-05-07 | 2011-11-10 | Владимир Петрович Севастьянов | Способ псевдодетонационной газификации угольной суспензии в комбинированном цикле "icsgcc" |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2663830A (en) * | 1952-10-22 | 1953-12-22 | Bell Telephone Labor Inc | Semiconductor signal translating device |
| US2756285A (en) * | 1951-08-24 | 1956-07-24 | Bell Telephone Labor Inc | Semiconductor signal translating devices |
| US2852677A (en) * | 1955-06-20 | 1958-09-16 | Bell Telephone Labor Inc | High frequency negative resistance device |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2842723A (en) * | 1952-04-15 | 1958-07-08 | Licentia Gmbh | Controllable asymmetric electrical conductor systems |
| DE1048359B (US07655746-20100202-C00011.png) * | 1952-07-22 | |||
| NL104654C (US07655746-20100202-C00011.png) * | 1952-12-31 | 1900-01-01 | ||
| US2838617A (en) * | 1953-01-13 | 1958-06-10 | Philips Corp | Circuit-arrangement comprising a four-zone transistor |
| BE529698A (US07655746-20100202-C00011.png) * | 1953-06-19 | |||
| NL105840C (US07655746-20100202-C00011.png) * | 1953-10-24 | |||
| NL216619A (US07655746-20100202-C00011.png) * | 1954-10-18 | |||
| US2981849A (en) * | 1956-01-09 | 1961-04-25 | Itt | Semiconductor diode |
| US2877359A (en) * | 1956-04-20 | 1959-03-10 | Bell Telephone Labor Inc | Semiconductor signal storage device |
| US2989426A (en) * | 1957-06-06 | 1961-06-20 | Ibm | Method of transistor manufacture |
| US3001895A (en) * | 1957-06-06 | 1961-09-26 | Ibm | Semiconductor devices and method of making same |
| US2900286A (en) * | 1957-11-19 | 1959-08-18 | Rca Corp | Method of manufacturing semiconductive bodies |
| NL121250C (US07655746-20100202-C00011.png) * | 1958-01-16 | |||
| FR1193093A (fr) * | 1958-03-06 | 1959-10-30 | Csf | Procédé de réalisation de jonctions i-n ou i-p |
| NL239104A (US07655746-20100202-C00011.png) * | 1958-05-26 | 1900-01-01 | Western Electric Co |
-
0
- NL NL252855D patent/NL252855A/xx unknown
- NL NL264084D patent/NL264084A/xx unknown
-
1959
- 1959-06-23 US US822385A patent/US3241012A/en not_active Expired - Lifetime
-
1960
- 1960-04-28 US US25385A patent/US3211971A/en not_active Expired - Lifetime
- 1960-05-24 GB GB18224/60A patent/GB917645A/en not_active Expired
- 1960-06-17 FR FR830282A patent/FR1264134A/fr not_active Expired
- 1960-06-21 DE DEJ18304A patent/DE1171534B/de active Pending
-
1961
- 1961-04-05 GB GB12111/61A patent/GB917646A/en not_active Expired
- 1961-04-26 FR FR859891A patent/FR80156E/fr not_active Expired
- 1961-04-27 DE DEJ19829A patent/DE1194061B/de active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2756285A (en) * | 1951-08-24 | 1956-07-24 | Bell Telephone Labor Inc | Semiconductor signal translating devices |
| US2663830A (en) * | 1952-10-22 | 1953-12-22 | Bell Telephone Labor Inc | Semiconductor signal translating device |
| US2852677A (en) * | 1955-06-20 | 1958-09-16 | Bell Telephone Labor Inc | High frequency negative resistance device |
Also Published As
| Publication number | Publication date |
|---|---|
| NL264084A (US07655746-20100202-C00011.png) | |
| FR1264134A (fr) | 1961-06-19 |
| US3241012A (en) | 1966-03-15 |
| US3211971A (en) | 1965-10-12 |
| FR80156E (fr) | 1963-03-22 |
| GB917646A (en) | 1963-02-06 |
| DE1194061B (de) | 1965-06-03 |
| NL252855A (US07655746-20100202-C00011.png) | |
| GB917645A (en) | 1963-02-06 |
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