DE1129625C2 - - Google Patents

Info

Publication number
DE1129625C2
DE1129625C2 DE1958T0015190 DET0015190A DE1129625C2 DE 1129625 C2 DE1129625 C2 DE 1129625C2 DE 1958T0015190 DE1958T0015190 DE 1958T0015190 DE T0015190 A DET0015190 A DE T0015190A DE 1129625 C2 DE1129625 C2 DE 1129625C2
Authority
DE
Germany
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE1958T0015190
Other languages
German (de)
Other versions
DE1129625B (de
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to DET15190A priority Critical patent/DE1129625B/de
Publication of DE1129625B publication Critical patent/DE1129625B/de
Application granted granted Critical
Publication of DE1129625C2 publication Critical patent/DE1129625C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
DET15190A 1958-05-23 1958-05-23 Drifttransistor, bei dem der spezifische Widerstand in der Basiszone von der Emitter-zur Kollektorzone zunimmt Granted DE1129625B (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DET15190A DE1129625B (de) 1958-05-23 1958-05-23 Drifttransistor, bei dem der spezifische Widerstand in der Basiszone von der Emitter-zur Kollektorzone zunimmt

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DET15190A DE1129625B (de) 1958-05-23 1958-05-23 Drifttransistor, bei dem der spezifische Widerstand in der Basiszone von der Emitter-zur Kollektorzone zunimmt

Publications (2)

Publication Number Publication Date
DE1129625B DE1129625B (de) 1962-05-17
DE1129625C2 true DE1129625C2 (en, 2012) 1962-11-29

Family

ID=7547845

Family Applications (1)

Application Number Title Priority Date Filing Date
DET15190A Granted DE1129625B (de) 1958-05-23 1958-05-23 Drifttransistor, bei dem der spezifische Widerstand in der Basiszone von der Emitter-zur Kollektorzone zunimmt

Country Status (1)

Country Link
DE (1) DE1129625B (en, 2012)

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL153395B (nl) * 1949-02-10 Contraves Ag Verbetering van een bistabiele trekkerschakeling.
DE900253C (de) * 1949-04-15 1953-12-21 Siemens Ag Anordnung fuer Halbleiterverstaerker
US2666814A (en) * 1949-04-27 1954-01-19 Bell Telephone Labor Inc Semiconductor translating device
CA509126A (en) * 1949-05-28 1955-01-11 Western Electric Company, Incorporated Semiconductor translating devices
US2742383A (en) * 1952-08-09 1956-04-17 Hughes Aircraft Co Germanium junction-type semiconductor devices
DE969508C (de) * 1952-08-18 1958-06-12 Licentia Gmbh Verfahren zur Herstellung einer gesteuerten, elektrisch unsymmetrisch leitenden Halbleiteranordnung
US2813048A (en) * 1954-06-24 1957-11-12 Bell Telephone Labor Inc Temperature gradient zone-melting
US2845122A (en) * 1954-12-24 1958-07-29 Ibm High speed punch
BE547665A (en, 2012) * 1955-06-28
NL223101A (en, 2012) * 1957-11-30 1900-01-01

Also Published As

Publication number Publication date
DE1129625B (de) 1962-05-17

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