DE1129625C2 - - Google Patents
Info
- Publication number
- DE1129625C2 DE1129625C2 DE1958T0015190 DET0015190A DE1129625C2 DE 1129625 C2 DE1129625 C2 DE 1129625C2 DE 1958T0015190 DE1958T0015190 DE 1958T0015190 DE T0015190 A DET0015190 A DE T0015190A DE 1129625 C2 DE1129625 C2 DE 1129625C2
- Authority
- DE
- Germany
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/60—Impurity distributions or concentrations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H10P95/50—
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DET15190A DE1129625B (de) | 1958-05-23 | 1958-05-23 | Drifttransistor, bei dem der spezifische Widerstand in der Basiszone von der Emitter-zur Kollektorzone zunimmt |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DET15190A DE1129625B (de) | 1958-05-23 | 1958-05-23 | Drifttransistor, bei dem der spezifische Widerstand in der Basiszone von der Emitter-zur Kollektorzone zunimmt |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE1129625B DE1129625B (de) | 1962-05-17 |
| DE1129625C2 true DE1129625C2 (OSRAM) | 1962-11-29 |
Family
ID=7547845
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DET15190A Granted DE1129625B (de) | 1958-05-23 | 1958-05-23 | Drifttransistor, bei dem der spezifische Widerstand in der Basiszone von der Emitter-zur Kollektorzone zunimmt |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE1129625B (OSRAM) |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL153395B (nl) * | 1949-02-10 | Contraves Ag | Verbetering van een bistabiele trekkerschakeling. | |
| DE900253C (de) * | 1949-04-15 | 1953-12-21 | Siemens Ag | Anordnung fuer Halbleiterverstaerker |
| US2666814A (en) * | 1949-04-27 | 1954-01-19 | Bell Telephone Labor Inc | Semiconductor translating device |
| CA509126A (en) * | 1949-05-28 | 1955-01-11 | Western Electric Company, Incorporated | Semiconductor translating devices |
| US2742383A (en) * | 1952-08-09 | 1956-04-17 | Hughes Aircraft Co | Germanium junction-type semiconductor devices |
| DE969748C (de) * | 1952-08-18 | 1958-07-10 | Licentia Gmbh | Verfahren zur Herstellung eines gesteuerten, elektrisch unsymmetrisch leitenden Halbleitersystems |
| US2813048A (en) * | 1954-06-24 | 1957-11-12 | Bell Telephone Labor Inc | Temperature gradient zone-melting |
| US2845122A (en) * | 1954-12-24 | 1958-07-29 | Ibm | High speed punch |
| BE547665A (OSRAM) * | 1955-06-28 | |||
| NL223101A (OSRAM) * | 1957-11-30 | 1900-01-01 |
-
1958
- 1958-05-23 DE DET15190A patent/DE1129625B/de active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| DE1129625B (de) | 1962-05-17 |