DE1127407B - Circuit arrangement for intercom systems - Google Patents
Circuit arrangement for intercom systemsInfo
- Publication number
- DE1127407B DE1127407B DEN19939A DEN0019939A DE1127407B DE 1127407 B DE1127407 B DE 1127407B DE N19939 A DEN19939 A DE N19939A DE N0019939 A DEN0019939 A DE N0019939A DE 1127407 B DE1127407 B DE 1127407B
- Authority
- DE
- Germany
- Prior art keywords
- main station
- substation
- transistor
- state
- amplifier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003990 capacitor Substances 0.000 claims description 9
- 239000004020 conductor Substances 0.000 description 5
- 101710179734 6,7-dimethyl-8-ribityllumazine synthase 2 Proteins 0.000 description 2
- 101710186609 Lipoyl synthase 2 Proteins 0.000 description 2
- 101710122908 Lipoyl synthase 2, chloroplastic Proteins 0.000 description 2
- 101710101072 Lipoyl synthase 2, mitochondrial Proteins 0.000 description 2
- 101710179738 6,7-dimethyl-8-ribityllumazine synthase 1 Proteins 0.000 description 1
- 101710186608 Lipoyl synthase 1 Proteins 0.000 description 1
- 101710137584 Lipoyl synthase 1, chloroplastic Proteins 0.000 description 1
- 101710090391 Lipoyl synthase 1, mitochondrial Proteins 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005520 electrodynamics Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04M—TELEPHONIC COMMUNICATION
- H04M9/00—Arrangements for interconnection not involving centralised switching
- H04M9/001—Two-way communication systems between a limited number of parties
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
- H02H3/08—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess current
- H02H3/087—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess current for dc applications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
- H02H3/08—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess current
- H02H3/093—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess current with timing means
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/34—DC amplifiers in which all stages are DC-coupled
- H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
- H03F3/345—DC amplifiers in which all stages are DC-coupled with semiconductor devices only with field-effect devices
- H03F3/3455—DC amplifiers in which all stages are DC-coupled with semiconductor devices only with field-effect devices with junction-FET's
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
- H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
- H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
- H03K3/286—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
- H03K3/2893—Bistables with hysteresis, e.g. Schmitt trigger
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Signal Processing (AREA)
- Electronic Switches (AREA)
- Emergency Protection Circuit Devices (AREA)
- Amplifiers (AREA)
Description
Schaltungsanordnung für Wechselsprechanlagen Die Erfindung betrifft eine Schaltungsanordnung für eine Wechselsprechanlage, bei der die mit einem als Hör- und Sprechverstärker anschaltbaren transistorisierten Verstärker ausgerüstete Hauptstation über eine Zweiadrige Leitung mit einer Unterstation verbunden ist, deren elektroaktustischer Wandler in Reihe mit einem durch einen Schalter überbrückbaren Kondensator liegt.Circuit arrangement for intercom systems The invention relates to a circuit arrangement for an intercom system, in which the with an as Hearing and speech amplifiers connectable transistorized amplifiers Main station is connected to a substation via a two-wire line, their electro-acoustic transducers in series with one that can be bridged by a switch Capacitor lies.
Bei diesem bekannten System besteht die Möglichkeit, daß sich die Hauptstation mit einer Unterstation verbindet, ohne daß die betreffende Unterstation angerufen hat. Hierdurch kann der Zustand eintreten, daß die Bedienungsperson der Hauptstation die Gespräche mithört, welche vom elektroakustischen Wandler in der Unterstation aufgefangen werden. Dies kann unerwünscht sein.In this known system there is the possibility that the Main station connects to a substation without the substation in question called. This can lead to the condition that the operator of the Main station listens to conversations from the electroacoustic transducer in the Substation are caught. This can be undesirable.
Die Erfindung bezweckt, ein einfaches Mittel zu schaffen, durch welches der Verstärker von der Unterstation aus geregelt werden kann.The invention aims to provide a simple means by which the amplifier can be controlled from the substation.
Die Erfindung ist dadurch gekennzeichnet, daß im Hörzustand der Hauptstation die Basiselektrode wenigstens der ersten Transistorstufe einerseits über einen Widerstand und eine Gleichspannungsquelle und andererseits über einen Widerstand in Reihe mit den Klemmen der Leitung mit der Emitterelektrode verbunden ist in der Weise, daß im Hörzustand der Hauptstation durch Herabsetzung des Widerstandes der Leitungsschleife der Unterstation die Transistorstufe vom Sättigungszustand in einen zum Verstärken elektrischer Signale geeigneten Zustand übergeht.The invention is characterized in that in the listening state of the main station the base electrode of at least the first transistor stage on the one hand via a resistor and a DC voltage source and on the other hand in series with via a resistor the terminals of the line is connected to the emitter electrode in such a way that in the listening mode of the main station by reducing the resistance of the line loop the substation converts the transistor stage from saturation to amplification electrical signals appropriate state passes.
Dieses System bietet den Vorteil, das im Gesprächszustand zwischen der Unterstation und der Hauptstation der Verstärker von der Unterstation aus unempfindlich gemacht werden kann. Hierdurch ist es möglich, bei der Unterstation rückzufragen, ohne daß die Hauptstation diese Rückfrage hörbar machen kann.This system offers the advantage of being in conversation between the substation and the main station the repeater insensitive from the substation can be made. This makes it possible to inquire at the substation without the main station being able to make this query audible.
Die Erfindung wird an Hand eines in der Zeichnung dargestellten Ausführungsbeispiels näher erläutert.The invention is based on an embodiment shown in the drawing explained in more detail.
In der Figur sind eine Hauptstation HP und eine Unterstation BP dargestellt.In the figure, a main station HP and a substation BP are shown.
Die Hauptstation ist in dem Ausführungsbeispiel mit nur einer Unterstation über die Leiter L 1 und L 2 verbunden. In im übrigen bekannter Weise können mehrere Unterstationen über Einzelleitungen mit der Hauptstation verbunden sein.In the exemplary embodiment, the main station is connected to only one substation via the conductors L 1 and L 2 . In the otherwise known manner, several substations can be connected to the main station via individual lines.
Die Hauptstation besitzt einen Transistorverstärker V, der aus zwei Transistorstufen mit den Transistoren T 1 und T 2 besteht, die von einer Batterie B gespeist werden, einen elektroakustischen Wandler LS2 und einen Sprech-Hör-Schalter SL. Die Unterstation besitzt einen elektroakustischen Wandler LS1 in Reihe mit dem Kondensator C4, der durch einen von Hand betätigten Schalter SK überbrückt wird.The main station has a transistor amplifier V, which consists of two transistor stages with the transistors T 1 and T 2 , which are fed by a battery B , an electroacoustic converter LS2 and a speech-listening switch SL. The substation has an electroacoustic converter LS1 in series with the capacitor C4, which is bridged by a manually operated switch SK.
Die elektroakustischen Wandler LS1 und LS2 sind z. B. elektrodynamische Lautsprecher, welche elektrische Signale in Schall überführen können, und umgekehrt. Im nachfolgenden werden die Wandler LS1 und LS2 als Lautsprecher bezeichnet.The electroacoustic transducers LS1 and LS2 are z. B. electrodynamic Loudspeakers that can convert electrical signals into sound and vice versa. In the following, the transducers LS1 and LS2 are referred to as loudspeakers.
Der Sprech-Hör-Schalter SL hat zwei Lagen. In der dargestellten Lage ist der Lautsprecher LS2 mit dem Verstärkerausgang über den Schaltarm 2 und der Leiter L 1 mit dem Verstärkereingang über den Schaltarm 1 verbunden. Dieser Zustand der Hauptstaion wird als Hörzustand bezeichnet.The talk-listen switch SL has two positions. In the position shown is the loudspeaker LS2 with the amplifier output via the switching arm 2 and the Conductor L 1 is connected to the amplifier input via the switch arm 1. This condition the main station is called the listening state.
In den EmitterKollektor-Kreisen der Transistoren T 1 und T 2 liegen in bekannter Weise Kollektorwiderstände und von Kondensatoren überbrückte Emitterwiderstände.In the emitter-collector circuits of the transistors T 1 and T 2 there are collector resistors and emitter resistors bridged by capacitors in a known manner.
Die Basiselektroden sind über die Widerstände R 2 und R 4 mit der negativen Klemme der Batterie B verbunden. Solange der Schalter SK in der Unterstation BP geöffnet ist, gibt es keinen anderen Gleichstromweg zwischen der Basiselektrode und der Emitterelektrode der Transistoren T 1 und T 2 als über die Batterie B.The base electrodes are connected to the negative terminal of battery B via resistors R 2 and R 4. As long as the switch SK in the substation BP is open, there is no other direct current path between the base electrode and the emitter electrode of the transistors T 1 and T 2 than via the battery B.
In diesem Zustand speist die Batterie B die Transistoren T 1 und T 2 mit dem Sättigungsstrom. Der Lautsprecher LS 1, der jetzt als Mikrophon wirkt, führt den empfangenen Schall in eine elektrische Spannung über, die über die Kondensatoren C 4 und C 2 und den im Emitterkreis liegenden -Ent kopplungskondensator an die Emitter-Basis-Strecke des Transistors T 1 gelegt wird. Hierdurch fließt ein geringer Sprechstrom im Emitter-Basis-Kreis des Transistors T1. Dieser Transistor bleibt aber im Sättigungszustand, so daß sich der Kollektorstrom praktisch nicht ändert.In this state, the battery B feeds the transistors T 1 and T 2 with the saturation current. The loudspeaker LS 1, which now acts as a microphone, converts the received sound into an electrical voltage that is applied to the emitter-base path of the transistor T 1 via the capacitors C 4 and C 2 and the coupling capacitor located in the emitter circuit will. As a result, a small speech current flows in the emitter-base circuit of the transistor T1. However, this transistor remains in the saturation state, so that the collector current practically does not change.
Die geringe Sprechspannung, die noch an der Kollektorelektrode des Transistors T 1 auftreten kann, wird der Basiselektrode des Transistors T2 über einen Kondensator C 3 zugeführt. Dieser Transistor ist gleichfalls im Sättigungszustand, so daß an seiner Kollektorelektrode keine Sprechspannung auftritt.The low speech voltage that is still at the collector electrode of the Transistor T 1 can occur, the base electrode of transistor T2 is over a capacitor C 3 is supplied. This transistor is also in the saturation state, so that no speech voltage occurs at its collector electrode.
Nach Schließung des Schalters SK in der Unterstation BP sind zwei Gleichstromwege geschlossen. Der erste erstreckt sich von der Basiselektrode des Transistors T 1 über den Widerstand R 1, den Leiter L 1, den Schalter SK, den Lautsprecher LS 2 und den Leiter L2 zur positiven Klemme der Batterie B. Der zweite erstreckt sich von der Basiselektrode des Transistors T2 über die Widerstände R 5 und R 3 und weiterhin in gleicher Weise wie der erste Gleichstromweg.After the switch SK in the substation BP is closed, two direct current paths are closed. The first extends from the base electrode of the transistor T 1 via the resistor R 1, the conductor L 1, the switch SK, the loudspeaker LS 2 and the conductor L2 to the positive terminal of the battery B. The second extends from the base electrode of the transistor T2 through resistors R 5 and R 3 and still in the same way as the first direct current path.
Der Kondensator C 5, der den Verbindungspunkt der Widerstände R 3 und R 5 mit der positiven Klemme der Batterie B verbindet, bildet zusammen mit dem Widerstand R 5 ein Tiefpassfilter. Hierdurch werden unerwünschte Rückkopplungseffekte vermieden.The capacitor C 5, which is the connection point of the resistors R 3 and R 5 connects to the positive terminal of battery B, forms together with the Resistor R 5 is a low pass filter. This creates undesirable feedback effects avoided.
Der Spannungsteiler R 1-R 2 legt über die Batterie B eine Spannung an die Basiselektrode des Transistors T1, derart, daß der Transistor als Verstärker wirksam ist. Ebenso legt der Spannungsteiler R3-R5-R4 eine derartige Einstellspannung an den Transistor T2.The voltage divider R 1-R 2 applies a voltage across the battery B. to the base electrode of the transistor T1, such that the transistor acts as an amplifier is effective. The voltage divider R3-R5-R4 also applies such a setting voltage to transistor T2.
Die vom LautsprecherLSl erzeugten Sprechspannungen werden jetzt von den beiden Transistorstufen des Verstärkers V verstärkt. Die verstärkte Spannung wird über den Kondensator C 4 dem Lautsprecher LS 2 zugeführt, der diese Spannung in Schall umwandelt. In der anderen, nicht dargestellten Lage des Sprech-Hör-Schalters SL ist der Lautsprecher LS2 mit dem Eingang des Verstärkers Y und der Leiter L 1 mit dem Ausgang des Verstärkers V verbunden. Dieser Zustand der Hauptstation wird als der Sprechzustand bezeichnet.The speech voltages generated by the loudspeaker LS1 are now from the two transistor stages of the amplifier V amplified. The increased tension is fed through the capacitor C 4 to the loudspeaker LS 2, which this voltage converts to sound. In the other, not shown position of the talk-listen switch SL is the loudspeaker LS2 with the input of the amplifier Y and the conductor L 1 connected to the output of the amplifier V. This state of the main station becomes referred to as the speech state.
Im Sprechzustand sind die Widerstände R 1 und R3 mit der positiven Klemme der Batterie B über den Lautsprecher LS2 verbunden. Die beiden Transistoren sind dann als Verstärker wirksam.In the speech state, the resistors R 1 and R3 are positive Terminal of battery B connected via loudspeaker LS2. The two transistors are then effective as an amplifier.
Der Verstärker V ist in diesem Beispiel als Zweistufenverstärker ausgebildet. Die Stufenzahl kann in bekannter Weise vergrößert werden. Es ist weiterhin möglich, nur eine Stufe zu regeln statt zwei, wie im Beispiel gezeigt.The amplifier V is designed as a two-stage amplifier in this example. The number of stages can be increased in a known manner. It is still possible to regulate only one stage instead of two, as shown in the example.
Claims (1)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA701637T | |||
| GB20034/59A GB950182A (en) | 1959-06-11 | 1959-06-11 | Improvements in and relating to electrical circuits employing transistor networks |
| NL250981 | 1960-04-28 | ||
| NL1127407X | 1960-04-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1127407B true DE1127407B (en) | 1962-04-12 |
Family
ID=76269552
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEE19460A Pending DE1141333B (en) | 1959-06-11 | 1960-06-10 | Transistor circuit as signal level detector with time delay |
| DEN19939A Pending DE1127407B (en) | 1959-06-11 | 1961-04-25 | Circuit arrangement for intercom systems |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEE19460A Pending DE1141333B (en) | 1959-06-11 | 1960-06-10 | Transistor circuit as signal level detector with time delay |
Country Status (6)
| Country | Link |
|---|---|
| JP (3) | JPS384353B1 (en) |
| CA (1) | CA701637A (en) |
| DE (2) | DE1141333B (en) |
| FR (2) | FR1259724A (en) |
| GB (3) | GB950183A (en) |
| NL (1) | NL250981A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CH407212A (en) * | 1963-08-29 | 1966-02-15 | Siemens Ag Albis | Amplitude discriminator with a bistable circuit |
| US3373295A (en) * | 1965-04-27 | 1968-03-12 | Aerojet General Co | Memory element |
| SE435679B (en) * | 1980-09-17 | 1984-10-15 | Landskrona Finans Ab | STIMULATOR SYSTEM, INCLUDING ONE OF A RECHARGEABLE BATTERY DRIVE PULSE GENERATOR |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1048946B (en) * | 1957-07-19 | 1959-01-22 | Siemens Ag | Circuit arrangement for controlling the power supply to a consumer with, in particular, an inductive reactance component by means of a transistor |
-
0
- CA CA701637A patent/CA701637A/en not_active Expired
- NL NL250981D patent/NL250981A/xx unknown
-
1959
- 1959-06-11 GB GB39319/63A patent/GB950183A/en not_active Expired
- 1959-06-11 GB GB20034/59A patent/GB950182A/en not_active Expired
- 1959-08-27 JP JP2750859A patent/JPS384353B1/ja active Pending
-
1960
- 1960-06-10 FR FR829644A patent/FR1259724A/en not_active Expired
- 1960-06-10 DE DEE19460A patent/DE1141333B/en active Pending
- 1960-06-10 JP JP2719260A patent/JPS384354B1/ja active Pending
-
1961
- 1961-04-25 DE DEN19939A patent/DE1127407B/en active Pending
- 1961-04-25 GB GB14915/61A patent/GB936756A/en not_active Expired
- 1961-04-27 FR FR860009A patent/FR1287248A/en not_active Expired
-
1963
- 1963-04-22 JP JP1952163A patent/JPS3819521B1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JPS3819521B1 (en) | 1963-09-26 |
| GB950182A (en) | 1964-02-19 |
| CA701637A (en) | 1965-01-12 |
| JPS384353B1 (en) | 1963-02-24 |
| GB936756A (en) | 1963-09-11 |
| FR1287248A (en) | 1962-03-09 |
| FR1259724A (en) | 1961-04-28 |
| NL250981A (en) | |
| DE1141333B (en) | 1962-12-20 |
| GB950183A (en) | 1964-02-19 |
| JPS384354B1 (en) | 1963-04-24 |
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