DE112013007385T5 - Device for reactive sputtering - Google Patents

Abstract

This reactive sputtering apparatus includes a cathode device (18) that emits sputtering particles to a composite film formation region (R1). The cathode device (18) comprises: a scanning unit (27) that scans an erosion area in an opposite area (R2); and a target (23) in which the erosion region is formed, and has a length in the scanning direction that is shorter than that of the opposite region (R2). The scanning unit (27) scans the erosion area toward the opposite area (R2) from a start position (St), the distance (D1) between a first end (Re1) of the two ends of the formation area (R1) in the scanning direction where the sputtering particles arrive first and a first end (23e1) of the target (23) closer to the first end (Re1) of the formation region in the scanning direction is 150 mm or more in the scanning direction.

Description

TECHNICAL AREA

The present disclosure relates to a reactive sputtering apparatus which forms a composite film on a large substrate.

STATE OF THE ART

A flat panel display such as a liquid crystal panel or an organic EL panel includes a plurality of thin film transistors that drive the screen elements. The thin film transistors include channel layers. The material for forming the channel layer is, for example, an oxide semiconductor such as indium-gallium-zinc oxide (IGZO). In recent years, substrates serving as the channel layer forming object have become large. Patent Document 1 describes an example of a sputtering apparatus for forming a film on a large substrate and includes a plurality of targets arranged side by side in one direction.

DOCUMENT OF THE PRIOR ART

PATENT

• Patent document 1: Japanese Laid-Open Patent Publication No. 2009-41115

SUMMARY OF THE INVENTION

PROBLEMS TO BE SOLVED BY THE INVENTION

The above-mentioned sputtering apparatus includes an area opposite to the substrate. The opposite area includes a target area that is the target surface and a non-target area that is an area that is between two target surfaces. Plasma is generated in phases that differ between the target area and the non-target area. Therefore, in the substrate, the phase of the sputtering particles reaching the part opposite to the target area and the part opposite to the non-target area differ, for example, the amount of these sputtering particles and the amount of oxygen contained in the sputtering particles. between the part pointing to the target area and the part pointing to the non-target area. Thus, the electrical properties required for an IGZO film differ at the level of IGZO film formed on the substrate.

When the IGZO film is used as a channel film, the characteristics of the thin film transistor greatly vary depending on the phase of the IGZO film forming an interface on the gate oxide film. Therefore, variations such as those described above in the IGZO film serving as a channel film lead to variations in the operation of a plurality of thin film transistors in the plane of the substrate.

Such variation in the film properties is not limited to that the material for forming the thin film is IGZO, and may also occur when a composite film such as an oxide film or a nitride film is formed on a single substrate by a reactive sputtering method using a plurality of Erosion regions, which are arranged in a region which is opposite to the substrate, is formed.

It is an object of the present invention to provide a reactive sputtering apparatus which restricts variations in the properties of a composite film on the boundary between the composite film and another component other than the composite film.

MEANS OF SOLVING THE PROBLEM

One aspect of the technique of the present disclosure is a reactive sputtering apparatus that includes a cathode device that emits sputtering particles to a formation region of a composite film to be formed on a film-forming article. An empty space opposite the education area defines an opposite area. The cathode device includes a scanning unit that scans an erosion area in the opposite area and a target on which the erosion area is formed. The target is shorter in one scan direction than the opposite region. The scanning unit scans the erosion area toward the opposite area from a start position located at a distance between a first end of the formation area, which is one of two ends of the formation area in the scanning direction and is first reached by the sputtering particles, and a first end of the target located immediately adjacent to a first end of the formation area in the scanning direction is 150 mm or larger in the scanning direction.

In the aspect of the reactive sputtering apparatus according to the technique of the present disclosure, most of the sputtering particles emitted from the target when the power supply to the target is started are prevented from reaching the formation region regardless of the incidence angles of the sputtering particles.

The sputtering particles emitted from the target when the current is supplied differ from sputtering particles emitted from the target at a predetermined time when the current is continuously supplied, in the energy of the sputtering particles, the probability of reaction with active Oxygen species or the like. Therefore, when current is supplied and the sputtering particles reach the formation region, a composite film formed has film properties different from those of a part formed by sputtering particles reaching the substrate later.

In this regard, the distance between the first end of the formation area and the first end of the target is 150 mm or more in the scanning direction. This limits variations in the film composition in a first-formed molecular layer of the composite film. Consequently, the variation in the properties of the composite film is limited at the boundary between the composite film and a film other than the composite film.

In another aspect of the reactive sputtering apparatus according to the technique of the present disclosure, the erosion area is one of two erosion areas formed on the target, and the two erosion areas include a first erosion area located immediately adjacent to the first end of the formation area at the start position. and a second erosion area remote from the first end of the formation area at the start position. The cathode device includes a shield located at the start position between the first end of the target and the first end of the formation region in the scanning direction. The shield prevents those of the sputtering particles emitted from the first erosion area in a direction in which the target is moving and having an angle of incidence of 30 ° at the formation area to reach the formation area.

The sputtering particles emitted from the first erosion area in the direction of movement of the target do not fly toward the second erosion area adjacent to the first erosion area. Therefore, the trajectory does not extend through a region where the plasma concentration is high compared to the sputtering particles emitted toward the second erosion region. This reduces the likelihood that the sputtering particles react with active species contained in the plasma and decreases the concentration of atoms contained in the reaction gas per unit of the strength or per unit of the area of the composite film formed on the formation area becomes. Thus, the composition of the composite film unit varies in strength or per unit area.

As the angle of incidence of the sputtering particles decreases, the flying distance of the sputtering particles increases until the sputtering particles reach the formation area. This increases the number of times the sputtering particle collides with particles other than active species, such as sputtering gas in an empty space beyond the range in which the plasma concentration is high. The variation in the energy of the sputtering particles forming the composite film varies the film concentration of the formed composite film. Therefore, when the composite film contains more sputtering particles having small angles of incidence, the variation in the film properties of the composite film is increased.

In this regard, in this aspect of the reactive sputtering apparatus according to the technique of the present disclosure, the shield does not allow sputtering particles having an incident angle of 30 ° or less to reach the substrate. This restricts the variation in the film properties of the composite film per unit thickness or per unit area.

In another aspect of the reactive sputtering apparatus of the present disclosure, the shield includes a first shield that is one of two shields. The other of the two shields is a second fault located farther from the formation area than a second end of the target, which is an end away from the formation area in the scan direction, in the starting position. Of the the second shield prevents those of the sputtering particles emitted from the second erosion region in a direction opposite to the direction in which the target is moving and whose incident angle at the formation region is 30 ° or less to reach the formation region.

In the aspect of the reactive sputtering apparatus according to the technique of the present disclosure, the sputtering particles reaching the formation area after the sputtering particles emitted from the first erosion area and reaching the formation area first are limited to sputtering particles having an incident angle of more than 30 ° ,

Consequently, the composite film is formed only by the sputtering particles having the restricted angles of incidence. This restricts the variation in composition and film concentration of the entire IGZO layer in the direction of the starch per unit of the starch or per unit of the surface. As a result, the variation in film properties is limited.

In another aspect of the reactive sputtering apparatus according to the technique of the present disclosure, the target is one of two targets arranged side by side in the scanning direction. The two targets include a first target that is immediately adjacent to the formation region at the start position and a second target that is farther away from the formation region than the first target. The second shield prevents those of the sputtering particles emitted from the first erosion region of the first target in a direction opposite to the direction in which the target is moving and having an incident angle at the formation region of 9 ° or less, the formation region to reach.

The sputtering particles emitted from the first erosion area in the direction opposite to the moving direction of the target fly to the second erosion area of the first target and to every erosion area of the second target. Therefore, before they reach the substrate, the trajectory of the sputtering particles emitted from the first erosion area extends through areas where the plasma concentration is high, that is, areas where vertical magnetic field components extending from the other erosion areas extending in a space where the sputtering particles fly are zero.

However, the trajectory is the sputtering particles having an incident angle of 9 ° or less, longer than that of sputtering particles having a larger angle of incidence, from a space beyond the areas where the plasma concentration is high to the formation area. Therefore, in the space beyond the areas where the plasma concentration is high, there are a number of times that the sputtering particles collide with particles other than the active species such as the sputtering gas. This reduces the energy of the sputtering particles and reduces the film concentration of the composite film. Consequently, the film concentration of the composite film deviates from the theoretical concentration, which adversely affects the film properties of the composite film.

In this regard, in the aspect of the reactive sputtering apparatus of the present disclosure, the second shield does not allow sputtering particles having an incident angle of 9 ° less to reach the formation region. This restricts a decrease in the film concentration of the composite film.

In another aspect of the reactive sputtering apparatus according to the technique of the present disclosure, the cathode apparatus includes a magnetic circuit and a magnetic circuit scanning unit. The magnetic circuit forms the erosion circle on the target. The magnetic circuit and the formation area are on opposite sides of the target. The magnetic circuit scanning unit scans the magnetic circuit between a first end and a second end of the target in the scanning direction. At the start position, the magnetic circuit scanning unit arranges the magnetic circuit at a position where the magnetic circuit overlaps with the first end of the target in the scanning direction.

In the aspect of the reactive sputtering apparatus according to the technique of the present disclosure, the distance between the erosion formed by the magnetic circuit and the first end of the formation area is minimal as compared to when the magnetic circuit is at a different position between the first end and located at the second end. Therefore, sputtering particles having a larger angle of incidence will reach the vicinity of the first end of the formation area as compared to cases where the magnetic circuit is at other positions. This further restricts variations in the composition and film concentration of the composite film.

In another aspect of the reactive sputtering apparatus according to the technique of the present disclosure, when the scanning unit once passes the target through the opposing area, the magnetic circuit scanning unit once scans the magnetic circuit from the first end of the target to the second end of the target.

Once the target passes through the opposite region to form the composite film, as the magnetic circuit reciprocates a number of times between the first end and the second end, the velocity of the magnetic circuit with respect to the target changes each time. when the scanning direction of the magnetic circuit changes with respect to the scanning direction of the target. The change in the relative velocity of the magnetic circuit changes the phase of the plasma formed on the surface of the target. This changes the number of sputtering particles emitted towards the education area. Thus, the strength of the composite film varies in the scanning direction of the target.

In this regard, and in the aspect of the reactive sputtering apparatus according to the technique of the present disclosure, the speed of the magnetic circuit does not change with respect to the target. This restricts the variation in the thickness of the composite film in the scanning direction of the target.

In another aspect of the reactive sputtering apparatus of the present disclosure, the cathode apparatus includes a third shield located between the two targets in the scanning direction.

In the aspect of the reactive sputtering apparatus according to the technique of the present disclosure, the maximum value of the trajectory of the sputtering particles emitted from the erosion area of each target and reaching the formation area is reduced. This reduces the maximum value of the number of times that the sputtering particles collide with other particles in the plasma. Thus, the minimum value for the energy of the sputtering particles is increased, and decreases in the film concentration of the composite film are restricted.

In another aspect of the reactive sputtering apparatus according to the technique of the present disclosure, the cathode apparatus is one of two cathode apparatuses, and the two cathode apparatuses are different from one another by a major component of material forming the target encased in each of the cathode apparatuses. When the scanning unit scans one of the two cathode devices, the scanning unit does not scan the other cathode device.

In the aspect of the reactive sputtering apparatus according to the technique of the present disclosure, in the laminate film including two composite films, the variation in the composition of each composite film is limited on the boundary to another film.

BRIEF DESCRIPTION OF THE DRAWINGS

1 FIG. 12 is a schematic diagram of the entire structure of a first embodiment of a sputtering apparatus including substrates according to the technique of the present disclosure. FIG.

2 is a schematic representation of the structure of a sputtering chamber.

3 is a schematic representation of the structure of a cathode unit.

4 Fig. 10 is an operation diagram showing the operation of the sputtering chamber.

5 Fig. 10 is an operation diagram showing the operation of the sputtering chamber.

6 Fig. 10 is an operation diagram showing the operation of the sputtering chamber.

7 FIG. 12 is a schematic diagram showing the construction of a second embodiment of a cathode unit according to the technique of the present disclosure. FIG.

8th FIG. 12 is a schematic diagram showing the structure of a third embodiment of a sputtering chamber according to the technique of the present disclosure. FIG.

9 Fig. 10 is an operation diagram showing the operation of the sputtering chamber.

10 Fig. 10 is an operation diagram showing the operation of the sputtering chamber.

11 FIG. 12 is a cross-sectional view of a cross-sectional structure of a thin film transistor in the embodiments. FIG.

12 Fig. 15 is a diagram showing the incident angle of a sputtering particle reaching a formation range in the first test example.

13 Fig. 10 is a diagram showing the incident angle of a sputtering particle reaching a formation area in the second test example.

14 Fig. 15 is a diagram showing the incident angle of a sputtering particle reaching a formation range in the third test example.

15 Fig. 15 is a diagram showing the incident angle of a sputtering particle which reaches a formation range in the fourth test example.

16 FIG. 15 is a graph showing the relationship between the angle of incidence and the amount of change in the threshold voltage in the first to fourth test examples.

17 Fig. 12 is a graph showing the relationship between the angle of incidence and the film concentration in the test examples.

18 FIG. 12 is a schematic diagram of the structure of a modified example of a sputtering chamber. FIG.

19 Fig. 12 is a schematic diagram of the structure of a modified example of a cathode unit.

20 Fig. 12 is a schematic diagram of the structure of a modified example of a sputtering apparatus.

EMBODIMENTS OF THE INVENTION

First Embodiment

A first embodiment of a sputtering apparatus will now be described with reference to FIGS 1 to 6 described. The entire structure of the sputtering apparatus, the structure of a sputtering chamber, the structure of a cathode unit and the operation of the sputtering chamber will be described in order. An example of the sputtering apparatus in which a composite film formed on a substrate is an indium-gallium-zinc oxide (IGZO) film will be described below.

[Whole Structure of Sputtering Device]

The entire structure of the sputtering apparatus will now be described with reference to FIG 1 described.

As in 1 can be seen, includes a sputtering device 10 a loading and unloading chamber 11 , a preprocessing chamber 12 and a sputtering chamber 13 which are arranged in a transfer direction which is one direction. Those of the three chambers adjoining each other are passed through a through-valve 14 coupled. The three chambers are each connected to a gas discharge unit 15 coupled, which discharges gas from the chamber, and the pressure in them is individually reduced when the corresponding gas discharge unit 15 is driven. The three chambers each comprise a lower surface in which two parallel tracks, namely a filming track 16 and a return trail 17 which extend in the transfer direction.

The filming track 16 and the return track 17 For example, each rail includes, for example, a rail extending in the transfer direction, a plurality of rollers arranged in the transfer direction, a plurality of motors that rotate the rollers, and the like. The filming track 16 transfers a carrier T, with which the sputtering device 10 is loaded from the loading and unloading chamber 11 to the sputtering chamber 13 , The return track 17 transfers the carrier T, which enters the sputtering chamber 13 is loaded from the sputtering chamber 13 to the loading and unloading chamber 11 ,

A tetragonal substrate S, which extends to the front of the plane of the drawings, is attached to the carrier T and is held upright. The length of the substrate S is, for example, 2200 mm in the transfer direction and 2500 mm to the front of the plane of the drawing.

The loading and unloading chamber 11 transfers a substrate S before forming the film coming from the outside of the sputtering apparatus 10 is taken to the preprocessing chamber 12 , The loading and unloading chamber 11 transfers a substrate S after forming the film coming from the preprocessing chamber 12 is taken from the sputtering device 10 out. When the substrate S before forming the film from the outside into the loading and unloading chamber 11 is transferred, and when the substrate S after forming the film from the loading and unloading chamber 11 is transferred out, the internal pressure of the loading and unloading chamber increases 11 at atmospheric pressure. When the substrate S before forming the film from the loading and unloading chamber 11 to the preprocessing chamber 12 is transferred and when the substrate S after forming the film from the processing chamber 12 to the loading and unloading chamber 11 is transferred, the internal pressure in the loading and unloading chamber 11 to the same level as the preprocessing chamber 12 lowered.

The preprocessing chamber 12 performs processes required for the film formation, for example, a heating process and a cleaning process, on the substrate S before forming the film, that of the loading and unloading chamber 11 to the preprocessing chamber 12 is transferred. The preprocessing chamber 12 transfers the substrate S, that from the loading and unloading chamber 11 to the preprocessing chamber 12 was transferred to the sputtering chamber 13 , The preprocessing chamber 12 also transfers the substrate S coming out of the sputtering chamber 13 to the preprocessing chamber 12 was transferred to the loading and unloading chamber 11 ,

The sputtering chamber 13 includes a cathode device 18 , which emits sputtering particles toward the substrate S, and a lane change unit 19 that lie between the filming track 16 and the return track 17 located. The sputtering chamber 13 uses the cathode device 18 to form an IGZO film on the substrate S prior to forming the film coming from the preprocessing chamber 12 to the sputtering chamber 13 was transferred. The sputtering chamber 13 uses the lane change unit 19 to support T after forming the film from the filming track 16 to the return track 17 to move.

[Structure of Sputtering Chamber]

The structure of the sputtering chamber will now be described in more detail with reference to FIG 2 described.

As in 2 is shown, transfers the film formation track 16 the sputtering chamber 13 the substrate S, that of the preprocessing chamber 12 into the sputtering chamber 13 was transferred in the transfer direction and fixes the position to the carrier T on the film formation track 16 for the period from the time when the thin film formation starts on the substrate S to the time when the thin film formation on the substrate S ends. When the position on the support T is fixed by a support member supporting the support T, the edges of the substrate S are also fixed in the transfer direction.

The sputtering chamber 13 includes a gas supply unit 21 supplying a gas capable of sputtering into a gap between the carrier T and the cathode device 18 is supplied. The gas coming from the gas supply unit 21 is supplied, includes a sputtering gas, for example, an argon gas and a reaction gas, for example, an oxygen gas.

The cathode device 18 includes a cathode unit 22 , The cathode unit 22 is disposed along a plane opposite to a surface Sa of the substrate S. The cathode unit 22 includes a target 23 , a clamping plate 24 and a magnetic circuit 25 arranged in this order, beginning with those closer to the substrate S.

The target 23 is flat and extends along the plane opposite to the surface Sa of the substrate S. The target 23 is longer in the direction of height, or in a direction orthogonal to the plane of the drawing, than the substrate S. In addition, the target is 23 shorter than the substrate S in the direction of transfer, for example about one fifth of the substrate S. The main component of the material being the target 23 is IGZO. For example 95 Mass percent of the material that is the target 23 forms, IGZO. It is preferred that 99 Mass percent or more IGZO are.

The clamping plate 24 is flat and extends along the plane opposite to the surface Sa of the substrate S. The clamping plate 24 is with a surface of the target 23 coupled away from the substrate S away. The clamping plate 24 is with a DC power supply 26D connected. From the DC power supply 26D DC becomes the target 23 through the clamping plate 24 fed.

The magnetic circuit 25 comprises a plurality of magnetic bodies having alternately different magnetic poles and a magnetron magnetic field B on a surface 23a of the target 23 form, which points to the substrate S. If a direction extending along the normal line of the surface 23a of the target 23 extends, as the normal line direction is called, the concentration of plasma that is in the gap between the surface 23a of the target 23 and the surface Sa of the substrate S is generated in a part of the magnetron magnetic field B passing through the magnetic circuit 25 highest, in which the magnetic field component in the normal line direction, that is, a vertical magnetic field component, is zero (hereinafter, the part of the magnetron magnetic field B in which the vertical magnetic field component is zero is designated as "B _perp = 0"). The plasma concentration is high in a range of B _perp = 0.

The cathode device 18 includes a scanning unit 27 that the cathode unit 22 moved in a scanning direction, extending in a single direction. The scanning direction is parallel to the transfer direction. The scanning unit 27 For example, a rail extending in the scanning direction includes rollers connected to the ends in the height direction of the cathode unit 22 coupled, a variety of motors that rotate the rollers and the like. The rail of the scanning unit 27 is longer than the substrate S in the scanning direction. The scanning unit 27 can be built into another structure, provided the cathode unit 22 is movable in the scanning direction.

The scanning unit 27 moves the cathode unit 22 in the scanning direction to the cathode unit 22 in an opposite region R2, which is an empty space facing a formation region R1 of the IGZO film. The entire surface Sa of the substrate S, which is an example of a film-forming article, is an example of the formation region R1 of the IGZO film. When the cathode device 18 the sputtering particle emits and begins to form the IGZO film, moves the scanning unit 27 the cathode unit 22 for example, from a start position St, which is one end of the scan unit 27 in the scanning direction, to an end position En, which is the other end of the scanning unit 27 in the scanning direction. Therefore, the scanning unit scans 27 the target 23 the cathode unit 22 in the opposite region R2, which faces the formation region R1.

A direction in which the formation region R1 and the opposite region R2 face each other is referred to as the opposite direction. In the opposite direction is the distance between the surface Sa of the substrate S and the surface 23a of the target 23 300 mm or less, for example 150 mm.

When the cathode unit 22 is at the start position St, the distance D1 between a first end Re1, which is an end of the formation region R1 in the scan direction, which is first reached by the sputtering particles, and a first end 23e1 of the target 23 which is in the scanning direction immediately adjacent to the first end Re1, 150 mm or more in the scanning direction. When the cathode unit 22 is at the end position En, the distance D1 between a second end Re2, which is an end of the formation region R1 in the scanning direction, which is reached later by the sputtering particles, and a second end 23e2 of the target 23 which is located immediately adjacent to the second end Re2 in the scanning direction, 150 mm or more in the scanning direction.

When the IGZO film is formed on the formation area R1, the scanning unit may 27 the cathode unit 22 scan once from the starting position St to the end position En in the scanning direction. Alternatively, the scanning unit 27 after scanning the cathode unit 22 from the start position St to the end position En in the scanning direction, the cathode unit 22 from the end position En to the start position St in the scan direction. Therefore, the scanning unit scans 27 the cathode unit 22 twice in the scanning direction. The scanning unit 27 can the cathode unit 22 scan between the start position St and the end position En for a certain number of times by the cathode unit 22 between the start position St and the end position En in the scanning direction is moved back and forth. The number of times the scan unit 27 the cathode unit 22 is changed in accordance with the strength of the IGZO film. As long as the conditions aside from the number of times the cathode unit 22 is scanned, remain the same, the number of times the scan unit 27 the cathode unit 22 scans, set to a higher value as the strength of IGZO film increases.

[Structure of Cathode Unit]

The structure of the cathode unit 22 will now be more detailed with reference to 3 described. 3 shows the cathode unit 22 , which is in the starting position St, as in 2 is pictured.

As in 3 is shown, a plane on which the surface Sa of the substrate S is located is referred to as the imaginary plane Pid, and a straight line orthogonal to the imaginary plane Pid is referred to as the normal line Lv. The surface 23a , or the side surface of the target 23 pointing to the substrate S is located on a plane parallel to the imaginary plane Pid.

The magnetic circuit 25 forms the magnetron magnetic field B on the surface 23a of the target 23 , When the magnetron magnetic field B is formed, the magnetic circuit forms 25 two vertical zero field magnetic fields in which the magnetic field component in the normal line Lv is zero (B _perp = 0) on the surface 23a of the target 23 , In the surface 23a of the target 23 For example, sputtering particles SP are mainly emitted from the two vertical magnetic field zero regions. One of the two vertical magnetic field null regions located immediately adjacent to the first end Re1 of the formation region R1 in the scan direction is a first erosion region E1. The other of the two vertical magnetic field null regions, which is away from the first end Re1 of the formation region R1 in the scan direction, is a second erosion region E2.

The magnetic circuit 25 has substantially the same size as the target 23 in the direction of the height which is orthogonal to the plane of the drawings. The magnetic circuit 25 For example, it has a length that is approximately one-third the length of the target 23 in the scanning direction.

The cathode unit 22 includes two shielding plates 28a . 28b that do not allow some of the sputtering particles SP emitted from the first erosion E1 and the second erosion E2 to reach the substrate S. The two shielding plates 28a . 28b each have substantially the same size as the target 23 in the direction of the height and protrude to the imaginary plane Pid from the surface 23a of the target 23 in the direction of the width which is orthogonal to the scanning direction. The first shielding plate 28a and the second shielding plate 28b protrude over the same width in the direction of the width. The first shielding plate 28a is an example of a first shield, and the second shield plate 28b is an example of a second shield.

When the cathode unit 22 located at the start position St, is the first shielding plate 28a which is one of the shielding plates, between the first end Re1 of the formation region R1, which the sputtering particles SP first reach, and the first end 23e1 of the target 23 which is located immediately adjacent to the first end Re1 in the scanning direction. When the cathode unit 22 is in the start position St, there is the second shielding plate 28b , which is the other one of the shielding plates, in a position separated from the formation region R1 further than the second end 23e2 That's the end of the target 23 which is distant from the first end Re1 of the formation region Re1 in the scanning direction.

The cathode unit 22 includes a magnetic circuit scanning unit 29 indicating the position of the magnetic circuit 25 in relation to the target 23 changes. The magnetic circuit scanning unit 29 For example, a rail extending in the scanning direction includes rollers having two ends in the direction of the height of the magnetic circuit 25 coupled, a variety of engines and the like. The rail of the magnetic circuit scanning unit has substantially the same length as the target 23 in the scanning direction. The magnetic circuit scanning unit 29 can be built into another structure, as long as the cathode unit 22 can move in the scanning direction.

The magnetic circuit scanning unit 29 scans the magnetic circuit 25 in the scanning direction between a first position P1 at which the first end 23e1 of the target 23 with the magnetic circuit 25 overlaps, and a second position P2, at the second end 23e2 of the target 23 with the magnetic circuit 25 overlaps. When the cathode device 18 the sputtering particle SP emits and starts to form the IGZO film, moves the magnetic circuit scanning unit 29 the magnetic circuit 25 from the first position P1 to the second position P2. When the scanning unit 27 the cathode unit 22 moves from the start position St to the end position En, moves the magnetic field scanning unit 29 the magnetic circuit 25 for example, from the first position P1 to the second position P2. More specifically, when the cathode unit 22 moves from the start position St to the end position En, the magnetic circuit begins 25 from the first position P1 to the second position P2. When the cathode unit 22 reaches the end position En, reaches the magnetic circuit 25 the second position P2. In this way, the magnetic circuit scanning unit moves 29 the magnetic circuit 25 in one direction, that of the direction of movement of the cathode unit 22 in the scanning direction opposite.

When the scanning unit 27 the cathode unit 22 from the start position St to the end position En scans, so that the target 23 passes once through the opposite region R2, it is preferable that the magnetic circuit scanning unit 29 the magnetic circuit 25 scans once from the first position P1 to the second position P2.

If the target 23 once through the opposite region R2 to form the IGZO film when the magnetic circuit 25 If the number of times between the first position P1 and the second position P2 moves back and forth a certain number of times, the speed of the magnetic circuit changes 25 in relation to the target 23 always when the scanning direction of the magnetic circuit 25 with respect to the scanning direction of the target 23 changes. Such a change in the relative velocity of the magnetic circuit 25 changes the phase of the plasma that is on the surface of the target 23 is formed. This changes the amount of the sputtering particles SP emitted toward the formation region R1. As a result, the strength of the IGZO film varies in the scanning direction of the target 23 ,

Therefore, if the scan unit 27 the target 23 once passed through the opposite region R2, the magnetic circuit scan unit scans 29 the magnetic circuit 25 once from the first position P1 to the second position P2. This limits variations in the strength of the IGZO in the scanning direction.

When the magnetic circuit scanning unit 29 the magnetic circuit 25 Moving in the scan direction, the vertical magnetic field zero ranges move through the magnetic circuit 25 are formed, also in the scanning direction. Therefore, the first erosion area E1 and the second erosion area E2 also move on the surface 23a of the target 23 in the scanning direction. In addition, if the scan unit 27 the cathode unit 22 in the opposite region R2 in the scanning direction, the scanning unit scans 27 also the first erosion region E1 and the second erosion region E2 in the opposite region R2.

An angle formed by a plane extending along a trajectory F of a sputtering particle SP emitted from each erosion region, or a vertical zero magnetic field region, and the imaginary plane Pid, that is, the surface Sa of the substrate S, is referred to as the angle of incidence θ of the sputtering particle.

When a plurality of sputtering particles SP are emitted from each of the erosion areas E1, E2, the shielding plates leave 28a . 28b not that those of the sputtering particles SP having incident angles θ included in a predetermined range reach the surface Sa of the substrate S which is the formation region R1. Even if they are at different positions in the scanning direction, have the first shield plate 28a and the second shielding plate 28b the same structure to prevent the sputtering particles SP to reach the substrate S. Therefore, hereinafter, the first shielding plate 28a described in detail, and the second shielding plate 28b is not described.

When the magnetic circuit 25 is at the first position P1, the distance between the first erosion region E1 and the first shielding plate 28a minimal in the scan direction. This maximizes the range of incident angles θ1 of the sputtering particles SP coming from the first erosion region E1 in the direction of movement of the cathode unit 22 be emitted and on the first shielding plate 28a plump. The first shielding plate 28a does not allow sputtering particles SP from the first erosion region E1 in the direction of movement of the cathode unit 22 are emitted and have an incident angle θ1 of, for example, 60 ° or less reaching the substrate S.

When the magnetic circuit 25 is at the second position P2, the distance between the first erosion region E1 and the first shielding plate 28a maximum in the scan direction. This minimizes the range of the incident angles θ2 of the sputtering particles SP coming from the first erosion region E1 in the moving direction of the cathode unit 22 be emitted and on the first shielding plate 28a Bounce. The first shielding plate 28a does not allow sputtering particles SP from the first erosion region E1 in the direction of movement of the cathode unit 22 are emitted and have an incident angle θ2 of, for example, 30 ° or less, reaching the substrate S.

That is, the first shielding plate 28a does not allow the sputtering particles SP, that of the first erosion E1 in the direction of movement of the cathode unit 22 and having an incident angle θ of 30 ° or less, reaching the substrate S irrespective of the position of the magnetic circuit 25 in the scanning direction.

The sputtering particles SP from the first erosion region E1 in the direction of movement of the cathode unit 22 are emitted do not fly in the direction of the second erosion area E2 adjacent to the first erosion area E1. Thus, the trajectory F does not extend through the other region of B _perp = 0, which extends in the height direction from the other erosion region toward a space in which sputtering particles fly. This reduces the likelihood that the sputtering particles SP will react with active species of oxygen trapped in the plasma. The IGZO formed by such sputtering particles SP has a lower oxygen concentration per unit strength and areal strength. As a result, the film composition in the surface of the IGZO film varies.

As the incident angle θ of the sputtering particles SP becomes smaller, the flying distance increases from where the sputtering particle SP flies beyond the region B _perp = 0 where the plasma concentration is high until the sputtering particle reaches the substrate S. This increases the number of times that the sputtering particles SP collide with particles other than active species, such as the sputtering gas in a space beyond the range B _perp = 0, in which the plasma concentration is high. Consequently, by the variation in energy of the sputtering particles PS constituting the IGZO film, the film concentration of the formed IGZO film will vary. Therefore, if the IGZO film contains more sputtering particles SP having small incident angles θ, variations in the film properties of the composite film increase.

In this regard, the first shield plate allows 28a not that sputtering particles SP having an incident angle θ of 30 ° or less reach the substrate S. This hinders the formation of IGZO containing a small amount of oxygen or having a low film concentration. Consequently, variations in the composition and the film concentration per unit of the strength and per unit area of the IGZO are limited.

When the cathode unit 22 from the end position En to the start position St in the scanning direction, and a plurality of sputtering particles SP from the second erosion region E2 in the moving direction of the cathode unit 22 is emitted leaves the second shielding plate 28b do not allow those of the sputtering particles having an incident angle θ of 30 ° or less to reach the substrate S. This restricts variations in composition and film concentration per unit of starch and per unit area of IGZO.

[Operation of the sputtering chamber]

The operation of the sputtering chamber 13 will now be with reference to the 4 to 6 described. Here will be described an example of the operation of the sputtering chamber when the cathode unit 22 moves from the start position St to the end position En in the scanning direction.

As it is in 4 is shown, is the cathode unit 22 when the cathode device 18 begins to emit sputtering particles SP toward the formation region R1 of the IGZO film, at the start position St, and the magnetic circuit 25 is located at the first position P1. At this time, the distance D1 between the first end Re1, which is one of two ends of the formation region R1 in the scanning direction, which reaches the sputtering particles SP first, and the first end 23e1 that is one of two ends of the target 23 in the scanning direction, which is immediately adjacent to the formation region R1, is 150 mm or larger. If therefore direct current to the target 23 is fed, most of the sputtering particles SP, that of the target 23 are emitted, do not reach the substrate S irrespective of the angles of incidence θ of the sputtering particles SP.

The sputtering particles SP coming from the target 23 When DC is supplied, the energy of the sputtering particles SP, the probability of reaction with the active species of oxygen and the like of sputtering particles SP different from the target are different 23 are emitted at a predetermined time when direct current is continuously supplied. Therefore, when DC voltage is supplied and the sputtering particles SP reach the substrate S, the formed IGZO film has film characteristics different from those of a part formed by the sputtering particles SP reaching the substrate S later. Thus, the film composition varies in an initially formed molecular layer of the IGZO film.

In this regard, the distance D1 is between the first end Re1 of the formation region R1 and the first end 23e1 of the target 23 150 mm or larger in the scanning direction. This restricts variations in the film composition in the first-formed molecular layer of the IGZO film.

When the cathode unit 22 moved in the scanning direction and sputtering particles SP from the target 23 are emitted, those of the sputtering particles SP reaching from the first erosion region E1 to the moving direction of the cathode unit reach 22 are emitted, the substrate S first. In this case, the first shield plate restricts 28a the sputtering particles SP reaching the substrate S on sputtering particles SP, which have an angle of incidence θ of more than 30 °.

Further, the first erosion region E1 is separated from the formation region R1 by a smaller distance than the second erosion region E2. This increases the probability that sputtering particles SP emitted from the first erosion region E1 will first reach each part of the substrate S. Thus, there is a high possibility that the first layer of the IGZO film is formed by the sputtering particles SP, that of the first erosion region E1 in the moving direction of the cathode unit 22 are emitted and have an incident angle θ of more than 30 °. This restricts variations in the film composition in the first layer of the IGZO film.

In addition, when the formation of the IGZO film is started, the magnetic circuit scanning unit arranges 29 the magnetic circuit 25 at the first position P1. This minimizes the distance in the scanning direction between the first erosion area E1 passing through the magnetic circuit 25 is formed, and the first shielding plate 28a compared to the distance when the magnetic circuit 25 is in other positions between the first position P1 and the second position P2. Therefore, in comparison to a case where the magnetic circuit 25 is in other positions, the range of angles of incidence θ of the sputtering particles SP which are on the first shielding plate 28a impact maximum, and the sputtering particles SP having larger incident angles θ reach a part of the formation region R1 located immediately adjacent to the first end Re1. This further restricts variations in the composition of the IGZO film.

As in 5 shown when reach the cathode unit 22 scanning the opposite region R2 facing the formation region R1, sputtering particles SP emerging from the first erosion region E1 in the direction of movement of the cathode unit 22 In addition, sputtering particles SP emitted from the second erosion region E2 in one direction reach the direction of movement of the cathode unit, and have an incident angle of 30 ° or less, not the substrate S. 22 is opposite, and having an angle of incidence of 30 ° or less, due to the second shielding plate 28b also not the substrate S.

Therefore, sputtering particles SP reaching the substrate S after the sputtering particles SP emitted from the first erosion region E1 and first reaching the substrate S are also limited to the sputtering particles SP having an incident angle θ of more than 30 °. As a result, the IGZO film is formed only by the sputtering particles SP having the limited angles of incidence θ. This restricts variations in the composition of the entire IGZO film in the direction of the starch per unit of the starch and per unit of the area.

As in 6 is shown when the cathode unit 22 is at the end position En, the distance D1 between the second end Re2 that is one of the two ends of the formation region R1 in the scanning direction that the sputtering particles SP reach later, and the second end 23e2 of the target 23 150 mm or more in the scanning direction. Therefore, when the cathode unit 22 is scanned from the end position En to the start position St, the scanning of the cathode unit 22 started from a phase in which most of the sputtering particles SP coming from the target 23 be emitted, not reach the substrate S. This limits variations between the sputtering particles SP, which is the second end 23e2 of the formation region R1 and sputter particles SP reaching other parts of the R1 education region. As a result, variations in the composition of the IGZO film in the scanning direction are restricted.

In addition, when the cathode unit 22 is at the end position En, even if the supply of direct current to the target 23 is stopped and then the supply of direct current is resumed, most sputtering particles SP not the substrate S, when the direct current is applied again. This restricts variations in the composition of IGZO film per unit thickness and per unit area.

As described above, the sputtering apparatus of the first embodiment has the advantages described below.

• (1) The distance D1 between the first end Re1 of the formation region R1 and the first end 23e1 of the target 23 is 150 mm or larger in the scanning direction. This restricts variations in the film composition in the first-formed molecular layer of the IGZO film. As a result, variations in the properties of the IGZO film are limited on the boundary between the IGZO film and an element other than the IGZO film.
• (2) When the cathode unit 22 is scanned from the start position St to the end position En and the sputtering particles SP from the first erosion region E1 in the direction of movement of the cathode unit 22 be emitted leaves the first shielding plate 28a do not allow those of the sputtering particles having an incident angle θ of 30 ° or less to reach the substrate S. Therefore, the sputtering particles SP first reaching the formation region R1 are restricted to the sputtering particles SP whose incident angle θ is larger than 30 °. This restricts variations in the composition of the IGZO film formed first per unit thickness and per unit area.
• (3) The second shielding plate 28b does not allow those of the sputtering particles SP, that of the second erosion region E2 in the direction of movement of the cathode unit 22 be emitted opposite direction and have an angle of incidence of 30 ° or less, reach the substrate S. Therefore, sputtering particles SP reaching the substrate S after the sputtering particles SP emitted from the first erosion region E1 and reaching the substrate S first are also limited to the sputtering particles SP having an incident angle θ of more than 30 °. As a result, the IGZO is formed only by the sputtering particles SP, which have the limited angle of incidence θ. This restricts variations in the composition of the entire IGZO film in the direction of the starch per unit of the starch and per unit of the area.
• (4) When the formation of the IGZO film starts, the magnetic circuit scanning unit orders 29 the magnetic circuit 25 at the first position P1. Compared to a case where the magnetic circuit 25 being at other positions between the first position P1 and the second position P2, this minimizes the distance between the first erosion area E1 passing through the magnetic circuit 25 is formed, and the first shielding plate 28a in the scanning direction. Therefore, the range of the incident angles θ of the sputtering particles SP acting on the first shielding plate 28a bounce, maximum, and the sputtering particles SP having a larger incident angle θ reach a part of the formation region R1 immediately adjacent to the first end Re1 as compared with a case where the magnetic circuit 25 is in other positions. This further restricts variations in the composition of the IGZO film.
• (5) If the target 23 once passes through the opposite region R2, the magnetic circuit 25 scanned once from the first position P1 to the second position P2. Thus, the speed of the magnetic circuit changes with respect to the target 23 Not. This restricts variations in the thickness of the composite film in the scanning direction of the target 23 one.

Second Embodiment

A second embodiment of a sputtering apparatus will now be described with reference to FIG 7 described. The sputtering apparatus of the second embodiment is different from the sputtering apparatus of the first embodiment in the number of targets comprising the cathode unit 22 includes. Here the differences are described in detail. In 7 The same reference characters are used for the elements that are the same as the corresponding elements in 3 which have been described. Additionally shows 7 the cathode unit 22 , which is in the starting position St.

[Structure of the cathode unit 22 ]

The structure of the cathode unit 22 will now be with reference to 7 described.

As in 7 is shown comprises the cathode unit 22 a first cathode 22A and a second cathode 22B , The first cathode 22A and the second cathode 22B each include the target 23 , the clamping plate 24 , the magnetic circuit 25 and the magnetic circuit scanning unit 29 , In the first cathode 22A and the second cathode 22B are the targets 23 arranged side by side in the scanning direction, and the surfaces 23a the two targets 23 lie along the same plane, which is parallel to the imaginary plane Pid. When the cathode unit 22 is located at the start position St, is the first cathode 22A closer to the formation region R1 than the second cathode 22B in the scanning direction. In addition, in the first cathode 22A and the second cathode 22B the clamping plates 24 in parallel with a single AC power source 26A connected.

The cathode unit 22 includes the scanning unit 27 that the cathode unit 22 moved in the scanning direction. When the first cathode 22A and the second cathode 22B coupled, moves the scanning unit 27 the cathode unit 22 in the scanning direction. The cathode unit 22 includes the first shielding plate 28a and the second shielding plate 28b , When the cathode unit 22 located at the start position P1, there is the first shield plate 28a between the first end Re1 of the education area R1 and the first end 23e1 of the target 23 in the first cathode 22A , When the cathode unit 22 is in the start position St, there is the second shielding plate 28b in a position farther from the first end Re1 of the formation region R1 than the second end 23e2 of the target 23 in the second cathode 22B ,

When a plurality of sputtering particles SP from each of the erosion regions E1, E2 of the first cathode 22A and the second cathode 22B are emitted, leave the shielding plates 28a . 28b it does not allow those of the sputtering particles SP having an incident angle θ included in a predetermined range to reach the substrate S. Even if they are at different positions in the scanning direction, they have the first shielding plate 28a and the second shielding plate 28b the same structure as to restrict sputtering particles SP reaching the substrate S. Therefore, hereinafter, the second shield plate 28b described in detail, and the first shielding plate 28a is not described.

When the magnetic circuit 25 is at the first position P1, the distance between the first erosion region E1 of the first cathode 22A and the second shielding plate 28b maximum in the scan direction. This minimizes the range of angles of incidence θ3 of the sputtering particles SP coming from the first erosion area E1 of the first cathode 22A are emitted in the direction corresponding to the direction of movement of the cathode unit 22 is opposite, and on the second shielding plate 28b Bounce. The second shielding plate 28b does not allow sputtering particles SP from the first erosion region E1 of the first cathode 22A are emitted in the direction corresponding to the direction of movement of the cathode unit 22 is opposite, and having an angle of incidence θ3 of 9 ° or less, reach the substrate S.

The sputtering particles SP emitted from the first erosion region E1 in the direction that is the moving direction of the cathode unit 22 is opposite, fly to the second erosion area E2 of the first cathode 22A and each erosion area of the second cathode 22B , Therefore, the trajectory F of the sputtering particles SP emitted from the first erosion E1 extends through a region where the plasma concentration is high before reaching the substrate S. However, the flying distance of the sputtering particles SP having an incident angle θ3 of 9 ° or less is longer than that of the sputtering particles SP having larger incident angles θ as they fly beyond the other ranges of B _perp = 0, and extends in FIG Direction of the height of other erosion areas, until the substrate S is reached. This increases the number of times the sputtering particles SP collide with particles other than active species, such as sputtering gas, in a space beyond the other regions of B _perp = 0 where the plasma concentration is high. As a result, the energy of the sputtering particles SP is reduced. The IGZO film formed by the sputtering particles SP having a small incident angle θ has a lower film concentration. Des leads to the deviation of the film concentration of the IGZO film from the theoretical concentration and adversely affects the film properties of the IGZO film.

In the same way as the second shielding plate 28b of the first embodiment, when the magnetic circuit 25 the second cathode 22B is in the first position P1, the second shielding plate 28b not that some of the sputtering particles SP, that of the second erosion region E2 of the second cathode 22B are emitted, the substrate S reach. More specifically leaves the second shielding plate 28b not to that sputtering particle SP, that of the second erosion region E2 of the second cathode 22B in the direction of movement of the cathode unit 22 be emitted opposite direction and have an angle of incidence θ2 of 30 ° or less, the substrate S reach. This restricts variations in the composition of IGZO film per unit thickness and per unit area.

If the two magnetic circuits 25 are respectively in the corresponding second position P2, the distance between the second erosion region E2 of the second cathode 22B and the first shielding plate 28a maximum in the scan direction. This minimizes the range of incident angles θ3 of the sputtering particles SP from the second erosion region E2 of the second cathode 22B in the direction of movement of the cathode unit 22 be emitted and on the first shielding plate 28a Bounce. More specifically, in the same way as the second shielding plate 28b the first shielding plate 28a not to that sputtering particles coming from the second erosion area E2 of the second cathode 22B in the direction of movement of the cathode unit 22 are emitted and have an incident angle θ3 of 9 ° or less reaching the substrate S.

Additionally leaves, in the same way as the first shielding plate 28a the first embodiment, when the magnetic circuit 25 the first cathode 22A is in the second position P2, the first shielding plate 28a not to mention that some of the sputtering particles SP, from the first erosion E1 of the first cathode 22A are emitted, the substrate S reach. More specifically leaves the first shielding plate 28a not to that sputtering particle SP, that of the first erosion area E1 of the first cathode 22A in the direction of movement of the cathode unit 22 are emitted and have an incident angle θ2 of 30 ° or less reaching the substrate S.

• (6) Die erste Abschirmplatte 28a und die zweite Abschirmplatte 28b lassen nicht zu, dass Sputterpartikel, die eine Einfallwinkel von 9° oder weniger aufweisen, den Bildungsbereich erreichen. Dies schränkt Abnahmen der Filmkonzentration des IGZO-Films ein.

As described above, the sputtering apparatus of the second embodiment has the advantage described below.

• (6) The first shield plate 28a and the second shielding plate 28b do not allow sputtering particles having an angle of incidence of 9 ° or less to reach the formation area. This restricts decreases in the film concentration of the IGZO film.

Third Embodiment

A third embodiment of a sputtering apparatus will now be described with reference to FIGS 8th to 10 described. The sputtering apparatus of the third embodiment is different from the sputtering apparatus of the first embodiment in the number of cathode units included in the sputtering chamber 13 are included. The differences will now be described.

Structure of Sputtering Chamber 13

The structure of the sputtering chamber 13 will now be with reference to 8th described. In 8th the same reference signs are used for the elements that are the same as the corresponding elements in 3 which have been described.

As in 8th is shown comprises the cathode device 18 a first unit 31 and a second unit 32 , When they are in starting position St, they are the first unit 31 and the second unit 32 in order from positions closer to the first end Re1 of the formation region R1 in the scanning direction. The first unit 31 and the second unit 32 each include the target 23 , the clamping plate 24 , the magnetic circuit 25 , the DC power source 26D , the first shielding plate 28a , and the second shielding plate 28b , In the two cathode units are the targets 23 arranged side by side in the scanning direction. The single scan unit 27 individually scans the first unit 31 and the second unit 32 through the opposite region R2 in the scanning direction. In addition, in the same way as the cathode unit 22 of the first embodiment, the first unit 31 and the second unit 32 in each case the magnetic field scanning unit 29 ,

The main component of the target material 23 is different between the first unit 31 and the second unit 32 , The main component of the target 23 the first unit 31 is for example silicon oxide. The main component 23 the second unit 32 is for example niobium oxide. In every target 23 are for example 95 Mass percent of the silica or niobium oxide, and preferred 99 Mass percent or more is silica or niobium oxide.

When the first unit 31 and the second unit 32 are at the start position St, the distance between the first end Re1 of the formation region R1 and the first end 23e1 of the target 23 in the first unit 31 150 mm or larger.

[Operation of sputtering chamber 13 ]

The structure of the sputtering chamber 13 will now be with reference to the 8th to 10 described. Here is an example of the operation of the sputtering chamber 13 described when a laminate film of a silicon oxide film and a niobium oxide film is formed on the surface Sa of the substrate S, which is the formation region R1.

As in 8th begins when the cathode device 18 begins to form the laminate film, the first unit 31 which is in the start position St to emit the sputtering particles SP. At this time, the distance D1 is between the first end Re1 of the formation region R1 and the first end 23e1 of the target 23 150 mm or larger in the scanning direction. Therefore, when DC to the target 23 is fed, most of the sputtering particles SP coming from the target 23 are emitted, do not reach the substrate S regardless of the angle of incidence θ of the sputtering particles SP. This restricts variations in the film composition of a first formed molecular layer of the silicon oxide film.

As it is in 9 is shown scans the movement of the first unit 31 in the scanning direction, the erosion areas of the first unit 31 by the opposing region R2 facing the formation region R1 in the scanning direction. In this case, restrict the first shielding plate 28a and the second shielding plate 28b the sputtering particles SP so that only sputtering particles SP reach the substrate S, which have an angle of incidence θ of more than 30 °. This restricts variations in the film composition of a first layer of the silicon oxide film.

As in 10 is shown, when the first unit 31 moves in the scanning direction and reaches the end position En, the second unit 32 located at the start position St to emit the sputtering particles SP. If the first unit 31 is at the end position En, the distance D1 is between the second end 23e2 of the target 23 that in the first unit 31 and the second end Re2 of the formation region R1 is 150 mm or more in the scanning direction. While scanning the first unit 31 from the start position St to the end position En scans the scanning unit 27 not the second unit 32 ,

The second unit 32 moves from the start position St to the end position En in the scanning direction. This scans the erosion areas of the second unit 32 by the opposing region R2 facing the formation region R1 in the scanning direction. In this case, restrict in the same way as with the first unit 31 , the first shielding plate 28a and the second shielding plate 28b the sputtering particles SP, which reach the substrate S, on the sputtering particles SP, which have an angle of incidence θ of more than 30 °. This restricts variations in the film composition of a first layer of the niobium oxide film. If the second unit 32 is in the end position En, the distance D1 is between the second end 23e2 of the target 23 in the second unit 32 and the second end Re2 of the formation region R1 is 150 mm or larger. While the second unit 32 from the start position St to the end position En, the scanning unit scans 27 not the first unit 31 ,

• (7) In der Laminatschicht, die den Siliciumoxidfilm und den Nioboxidfilm umfasst, sind Variationen in der Zusammensetzung der Grenze des Siliciumoxidfilms in Bezug auf das Substrat S eingeschränkt, und Variationen in der Zusammensetzung der Grenze des Nioboxidfilms in Bezug auf den Siliciumoxidfilm sind eingeschränkt.

As described above, the sputtering apparatus of the third embodiment has the advantage described below.

• (7) In the laminate layer comprising the silicon oxide film and the niobium oxide film, variations in the composition of the boundary of the silicon oxide film with respect to the substrate S are restricted, and variations in the composition of the boundary of the niobium oxide film with respect to the silicon oxide film are limited.

[Test Examples]

[Properties of Thin Film Transistor]

Test examples relating to the characteristics of a thin film transistor will now be described with reference to FIGS 11 to 16 described. Here, in succession, the condition for forming the IGZO film, a thin film transistor comprising the IGZO film formed by the sputtering apparatus 10 the embodiment has been formed, and described the threshold voltage of the thin film transistor.

[Condition for Forming IGZO Film]

The IGZO film is formed on the surface Sa of the substrate S by the sputtering apparatus 10 of the first embodiment is formed under the condition described below. When the IGZO film is formed, the cathode unit becomes 22 scanned from the start position St to the end position En in the scanning direction to the erosion regions of the cathode unit 22 once through the opposite area R2 to scan. At this time, the magnetic circuit 25 also once scanned from the first position P1 to the second position P2 in the direction that the moving direction of the cathode unit 22 is opposite.

A laminate body comprising a silicon oxide film which is a thermal oxidation-generated film formed on a p-type silicon substrate is used as the substrate S. direct current : 10 W / cm ² Argon gas partial pressure : 0.30 Pa Oxygen gas partial pressure : 0.05 Pa Temperature of the substrate S : 100 ° C

[Structure of Thin Film Transistor]

The structure of a thin film transistor comprising the IGZO film formed under the above condition and functioning as a channel layer will now be described with reference to FIG 11 described.

As in 11 is shown comprises a thin film transistor 40 a gate electrode 41 , a gate oxide film 42 and a channel layer 43 , The gate electrode 41 , the gate oxide film 42 and the channel layer 43 are sequentially stacked from a lower side. For example, the gate electrode 41 is a substrate formed of a p-type silicon and the gate oxide film 42 is a silicon oxide film formed by thermally oxidizing the gate electrode 41 is formed. The channel layer 43 is the IGZO movie using the sputtering device 10 is formed. The channel layer 43 has a thickness of for example 50 nm.

A source electrode 44 and a drain electrode 45 be on the channel layer 43 educated. The source electrode 44 and the drain electrode 45 For example, they are made of molybdenum. The channel length L, which is the length of the gap between the source electrode 44 and the drain electrode 45 is, for example, 0.1 mm. The source electrode 44 and the drain electrode 45 each have a channel width W which is the length in the direction orthogonal to the plane of the drawings, for example, 1 mm.

[First Test Example]

The first test example is with reference to 12 described.

As in 12 is shown, in a first test example, an opposite shielding plate M1 including a side surface facing a surface TGs of a target TG was placed in the sputtering chamber 13 and the IGZO film was formed under the above conditions. A plate member used as the opposite shielding plate M1 was longer in the transfer direction than the target TG in the transfer direction. The size of the plate member in the direction of the height was substantially the same as that of the target TG. The target TG, erosion regions E formed on the surface TGs of the target TG, and the opposite shielding plate M1 were respectively positioned to extend with respect to an imaginary plane extending through the center of the target TG in the transfer direction and serves as a plane of symmetry, are symmetrical.

When a plurality of sputtering particles have been emitted from each erosion region E, the opposing shielding plate M1 allows the sputtering particles flown to an opposite side in the transfer direction of the other region of B _perp = 0 to depart from the other erosion region E extending, and the angles of incidence, which were included in a predetermined range, reach the education area. More specifically, the opposite shielding plate M1 allowed the sputtering particles reaching the formation region in the range of a minimum value θ1m of 0 ° to a maximum value θ1M of 30 °.

In addition, when a plurality of sputtering particles have been emitted from each erosion region E, the opposite shielding plate M1 allows the sputtering particles which have flown to the other region of B _perp = 0 extending from the other erosion region E, and the sputtering particles Incidence angle included in a predetermined range, reach the formation area. More specifically, the opposite shielding plate M1 allowed the sputtering particles reaching the formation region in the range of a minimum value θ2m of 0 ° to a maximum value θ2M of 15 °.

[Second Test Example]

The second test example will now be described with reference to 13 described.

As in 13 is shown, the opposite shielding plate M1 became in the same manner as in the first test example in the sputtering chamber 13 and the IGZO film was formed. However, the second test example deviates from the first test example in that a plate member used as the opposite shielding plate M1 was shorter in the transfer direction than the target TG. The target TG, the erosion regions E formed on the surface TGs of the target TG, and the opposite shielding plate M1 were respectively positioned to be symmetric with respect to the imaginary plane serving as the plane of symmetry.

When a plurality of sputtering particles have been emitted from each erosion region E, the opposing shielding plate M1 allows the sputtering particles flown to an opposite side in the transfer direction of the other region of B _perp = 0, which is different from the other erosion region E extending, and the angles of incidence, which were included in a predetermined range, reach the education area. More specifically, the opposite shielding plate M1 allowed the sputtering particles reaching the formation region in the range of a minimum value θ1m of 0 ° to a maximum value θ1M of 60 °.

In addition, when a plurality of sputtering particles are emitted from each erosion region E, the opposite shielding plate M1 allows sputtering particles flying to the other region of B _perp = 0 extending from the other erosion region E and the angles of incidence that were trapped in a predetermined area, reach the educational area. More specifically, the opposite shielding plate M1 allowed the sputtering particles reaching the formation region in the range of a minimum value θ2m of 0 ° to a maximum value θ2M of 21 °.

[Third Test Example]

The third test example will now be described with reference to 14 described.

As in 14 is shown, a shield plate M2 extending in the height direction was disposed at each of two ends in the transfer direction of the opposite shielding plate M1 and the target TG, which were the same as those in the second test example, and became the IGZO film educated. The target TG, the erosion regions E formed on the surface TGs of the target TG, the opposing shielding plate M1, and the shielding plates M2 were respectively positioned to be symmetrical with respect to the imaginary plane serving as the plane of symmetry.

When a plurality of sputtering particles are emitted from each erosion region E immediately adjacent to each shielding plate M2 in the transfer direction, the sputtering plate M2 does not allow the sputtering particles to flow to an opposite side in the transfer direction of the other region of B _perp = 0 that extends from the other erosion area E, and that had angles of incidence of 30 ° or less, reach the educational area. In addition, when a plurality of sputtering particles were emitted from each erosion region E immediately adjacent each shielding plate M2 in the transfer direction, the sputtering plate M2 does not allow sputtering particles flying to the other region of B _perp = 0 to be different from the other Erosion area E extends, and the angles of incidence of 9 ° or less, reach the educational area.

Therefore, in the third test example, when sputtering particles emitted from each erosion region E had flown to an opposite side in the transfer direction of the other region of B _perp = 0 extending from the other erosion region E and had the angles of incidence, which were included in the described area, the education area. 30 ° <angle of incidence θ ≤ 60 °

In addition, of the sputtering particles emitted from each erosion region E and flying to the opposite side in the transfer direction of the other region of B _perp = 0 extending from the other erosion region E, the sputtering particles having incident angles reached included in the area described below, the education sector. 9 ° <angle of incidence θ ≤ 21 °

[Fourth Test Example]

The fourth test example will now be described with reference to 15 described.

In the same manner as in the third test example, the IGZO film was formed with the two shielding plates M2 as shown in FIG 15 were shown arranged. However, in the fourth test example, a plate member used as the shielding plate M2 had a larger size in the width direction than the shielding plate M2 of the third test example. The target TG, the erosion areas formed on the surface TGs of the target TG, and the shielding plates M2 were respectively positioned to be symmetric with respect to the imaginary plane serving as the plane of symmetry.

When sputtering particles were emitted from the erosion region E immediately adjacent to each shielding plate M2 in the transfer direction, the shielding plate M2 did not allow the sputtering particles flying to the opposite side in the transfer direction of the other region of B _perp = 0, which is different from the other erosion area E, and having an angle of incidence of 60 ° or less, reached the educational area. In addition, when sputtering particles were emitted from the erosion region E immediately adjacent to each shielding plate M2 in the transfer direction, the shielding plate M2 did not allow sputtering particles flying to the opposite side of the other region of B _perp = 0 to depart from the other erosion region E, and having an angle of incidence of 21 ° or less, reach the educational area.

[Relationship between properties of the thin film transistor and the angle of incidence]

The relationship between the properties of the thin film transistor comprising an IGZO film as a channel layer and the angles of incidence of the sputtering particles in the formation of the IGZO film will now be described with reference to FIG 16 described.

The IGZO films formed in the first to fourth test examples included in the 12 to 15 were each used to form the thin film transistor, which in 11 is pictured. The thin film transistors, each including the IGZO film of one of the test examples, were subjected to a bias stress test for 60 minutes under a condition where, for example, the gate-source voltage was 20 V and the drain-source Voltage 20 V was. For each thin film transistor, a threshold voltage V _{0 was} measured according to the bias stress test to calculate an average value for the variation (ΔV ₀ ) of the threshold voltage V ₀ . The threshold voltage V ₀ is the gate-source voltage when the drain current reaches 1E ^-9A .

As in 16 ₄ , it was found that the change of the threshold voltage V ₀ 5.5 in the thin film transistor of the first test example was the embodiment, and that the change of the threshold voltage V _{0 was} 5.1 in the thin film transistor of the second test example. In the case of the thin film transistor of the second test example, in forming the IGZO film, the maximum values θ1M, θ2M of the incident angle of the sputtering particles reaching the formation region were larger than those of the thin film transistor of the first test example. Therefore, it was found that the change of the threshold voltage V _{0 was} smaller in the thin film transistor of the second test example.

In the thin film transistor of the third test example, it was found that the change of the threshold voltage V _{0 was} 2.1 and was much lower than that of the thin film transistor of the second test example.

Although they had the same maximum values θ1M, θ2M of the angles of incidence in forming the IGZO, the thin film transistor of the second test example and the thin film transistor of the third test example had different minimum values θ1m, θ2m of the angles of incidence. The minimum values θ1m, θ2m of the incident angle of the third test example were larger than those of the second test example. Thus, if sputtering particles having a small angle of incidence do not reach the formation area when forming an IGZO film, it can be determined that the change in the threshold voltage V ₀ is in the thin film transistor comprising the IGZO film serving as the channel layer. reduced. More specifically, it can be determined that the change of the threshold value V ₀ decreased when the sputtering particles satisfying the conditions described below did not reach the formation region.

(A) Sputtering particles fly to the opposite side in the transfer direction of another region of B _perp = 0 extending from another erosion region E, and have an incident angle of 30 ° or less with respect to the formation region

(B) Sputtering particles fly to another region of B _perp = 0 extending from another erosion region E, and have an incident angle of 9 ° or less with respect to the formation region

In the thin film transistor of the fourth test example, the variation of the threshold voltage V _{0 is} 1.9 and less than that of the thin film transistor of the third test example. However, it was found that the difference in the change of the threshold voltage V ₀ between the thin film transistor of the third test example and the thin film transistor of the fourth test example was less than the change of the threshold voltage V ₀ between the thin film transistor of the second test example and FIG Thin-film transistor of the third test example. This ensures that, even if the minimum values θ1m, θ2m the angle of incidence are greater than those of the third test example, the change in threshold voltage V ₀ of the thin film transistor has not been substantially reduced, it was found.

Therefore, in order to reduce the variation of the threshold value V ₀ in the thin film transistor, it is important that, in forming the IGZO film, the sputtering particles reaching the formation region satisfy the conditions (A) and (B) described above. When the IGZO film is formed by sputtering particles satisfying the conditions (A) and (B), variations in the composition of the IGZO film are limited in the IGZO film which forms the interface of the gate oxide film. Therefore, variations in the semiconductor characteristics of the IGZO film are also limited. This easily obtains the insulating properties of the gate oxide film 42 and restricts the change of the threshold voltage of the thin film transistor.

A sputtering particle satisfying condition (A) deviating from a sputtering particle satisfying condition (B) does not fly to another region of B _perp = 0 extending from another erosion region E. This reduces the likelihood that the sputtering particle satisfying condition (A) will react with the active species contained in the plasma. Thus, in particular, when the sputtering particles satisfying condition (A) do not reach the formation region, the variations in the composition and in the film concentration of the IGZO film are restricted.

[Film concentration of IGZO film]

Test examples relating to the film concentration of IGZO film will now be described with reference to 17 described. 17 FIG. 12 shows results of the IGZO film concentration measured by X-ray reflectometry and the theoretical concentration (g / cm ³ ) when the ratio of indium, gallium, and zinc in the IGZO film is 1: 1: 1 with respect to FIG Number of atoms is.

The film concentration of the IGZO film formed under the conditions of the second test example and the film concentration of the IGZO film formed under the conditions of the third test example were measured.

As in 17 is shown, the film concentration of the second test example was found to be 5.22 g / cm ³ , and the film concentration of the third test example was 6.23 g / cm ³ . In addition, it was found that the film concentration of the third test example was a value closer to 6.38 g / cm ³ , which was the theoretical concentration, than the film concentration of the second test example. Thus, in the IGZO film formed by a plurality of sputtering particles SP excluding the sputtering particles satisfying the conditions (A) and (B), it was found that the film concentration was higher and the value was closer to the theoretical one Concentration was than that of the IGZO film formed by a plurality of sputtering particles SP, enclosing the sputtering particles satisfying the conditions (A) and (B).

In the IGZO film formed by a plurality of sputtering particles SP excluding the sputtering particles satisfying the conditions (A) and (B), the film concentration which is a feature of the entire IGZO film in the direction of the Strength of the IGZO film is increased in the interface of another component in addition to the properties of the IGZO film.

Each of the above embodiments may be changed as follows.

In the first and second embodiments, the main component of the target formation material 23 be an oxide semiconductor other than IGZO, for example, zinc oxide, nickel oxide, tin oxide, titanium oxide, vanadium oxide, indium oxide or strontium titanate.

In the first and second embodiments, the main component of the target formation material 23 not be IGZO and may be an indium-containing oxide semiconductor other than IGZO, such as indium-zinc-tin oxide (IZTO), indium-zinc-antimony oxide (IZAO), indium-tin-zinc oxide (ITZO), indium-zinc oxide (IZO) or indium-antimony oxide (IAO). Although such oxide semiconductor containing other indium is used as the IGZO as the channel layer of the thin film transistor, the inventors of the present application have demonstrated that the same advantages as those of the IGZO film are achieved by using the incident angle θ of the sputtering particles SP included in the Education area R1 is restricted.

The main component of the target material 23 is not limited to IGZO and may be an inorganic oxide such as indium-tin oxide (ITO) or alumina.

The main component of the target material 23 may be a metal, a metal compound, a semiconductor or the like. When a single metal or a single semiconductor as the main component of the target formation material 23 used, the sputtering particles SP coming from the target 23 are reacted with the plasma formed from a reaction gas to form a composite film such as an oxide film or a nitride film.

The sputtering chamber 13 That is included in the sputtering apparatus of the third embodiment need not be configured so that both the first unit 31 and the second unit 32 are arranged at the start position St when the emission of the sputtering particles SP to the formation region R1 is started.

As in 18 can be shown, the first unit 31 be configured so that it is positioned at the start position St, and the second unit 32 can be configured to be positioned at the end position En. In this configuration, it is preferable if the first unit 31 is located at the start position St, that the distance D1 between the first end 23e1 of the target 23 the first unit 31 and the first end Re1 of the formation region R1 is 150 mm or larger in the scanning direction. In addition, it is preferable if the second unit 32 is located in the end position En, that the distance D1 between the second end 23e2 of the target 23 the second unit 32 and the second end Re2 of the formation region R1 is 150 mm or larger in the scanning direction.

For example, when a laminate body is formed on the formation area R1, the scanning unit moves 27 the first unit 31 from the start position St to the end position En in the scanning direction. This forms, for example, a silicon oxide film on the formation region R1. The scanning unit 27 moves the first unit 31 from the end position En to the start position St in the scanning direction. At this time, the first unit 31 may or may not emit the sputtering particles SP to the formation region R1. Then the scan unit moves 27 the second unit 32 from the end position En to the start position St in the scanning direction. This forms, for example, a niobium oxide film on the formation region R1. The scanning unit 27 moves the second unit 32 from the start position St to the end position En in the scanning direction. At this time, the second unit 32 may or may not emit the sputtering particles SP to the formation region R1.

The number of times that are the first unit 31 and the second unit 32 each move between the start position St and the end position En in the scanning direction can be changed in accordance with the thickness of the composite film formed by the corresponding unit.

The sputtering device 10 can be configured to have two sputtering chambers 13 each comprising a cathode unit 22 includes. In this configuration, when the cathode units 22 the sputtering chambers 13 each targets 23 comprised of materials having different major components, a laminate body formed on the surface Sa of the substrate S comprising two composite films. Alternatively, the sputtering device 10 be configured so that there are three or more sputtering chambers 13 each including a cathode unit 22 comprising, wherein the cathode units 22 each targets 23 comprising different major components of the educational material. In this configuration, a laminate body comprising three or more composite films is formed on the surface Sa of the substrate S.

The first unit 31 In the third embodiment, a target 23 in which the major component of the forming material is other than silica. The second unit 32 can be a target 23 in which the major component of the forming material is other than niobium oxide. In every target 23 For example, the main component of the formation material may be a metal, a metal compound, a semiconductor, and the like.

The sputtering chamber 13 The third embodiment may be configured to include three or more cathode units 22 includes, each one a target 23 include. The targets 23 may be formed from materials having different or the same major components.

As in 19 shown, the cathode unit 22 the second embodiment, a third shielding plate 28c between the target 23 the first cathode 22A and the target 23 the second cathode 22B in the scanning direction. The third shielding plate 28c can protrude in the width direction across a width, which is different or the same as that of the first shielding plate 28a and the second shielding plate 28b , The third shielding plate 28c is an example of a third shield.

When the cathode unit 22 moving from the start position St to the end position En in the scanning direction is the distance between the first erosion E1 of the first cathode 22A and the third shielding plate 28c maximum in the scan direction. However, the distance between the first erosion area E1 and the third shielding plate is 28c shorter than the distance between the first erosion region E1 and the second shielding plate 28b in the scanning direction. Therefore, when a plurality of sputtering particles SP from the first erosion region E1 of the first cathode 22A is emitted in a direction opposite to the direction of movement of the cathode unit 22 is sputtering particles have SP on the third shielding plate 28c Impact angle of incidence θ4 in a range above 9 °. This reduces the maximum value of the trajectory F of the sputtering particles SP reaching the formation region R1 and the maximum value of the number of times the sputtering particles SP collide with other particles in the plasma. As a result, the minimum energy value of the sputtering particles SP is increased. This restricts decreases in the film concentration of the IGZO film.

When the magnetic circuits 25 are respectively in the corresponding second position P2, the distance between the second erosion region E2 of the second cathode 22B and the third shielding plate 28c maximum in the scanning direction, but shorter than the distance between the second erosion area E2 and the first shielding plate 28a in the scanning direction. Therefore, when a plurality of sputtering particles SP from the second erosion region E2 of the second cathode 22B in the direction of movement of the cathode 22 is emitted, have sputtering particles SP, which on the third shielding plate 28c Impact angle of incidence θ in the range of about 9 °. Therefore, the third shielding plate becomes 28c applied to sputtering particles SP, from the second cathode 22B be emitted in the same way as on the sputtering particles SP, from the first cathode 22A be emitted.

In the first to third embodiments, the magnetic circuit scanning unit moves 29 the magnetic circuit 25 from the first position P1 to the second position P2 in the scanning direction. Instead, the magnetic circuit scanning unit 29 the magnetic circuit 25 from the second position P2 to the first position P1 in the scanning direction. In this case, if the scan unit 27 the target 23 once through the opposite area R2 scans and the magnetic circuit scan unit 29 the magnetic circuit 25 scans once from the second position P2 to the first position P1, advantage (5) can be achieved.

The magnetic circuit scanning unit 29 can be configured to use the magnetic circuit 25 between the first end 23e1 and the second end 23e2 of the target 23 partially scanned in the scan direction. This configuration reduces the maximum value of the distance between each erosion area and each shield in the scanning direction. Thus, a shielding plate having a smaller projection width does not allow sputtering particles SP having the same incident angle θ as in each of the embodiments to reach the formation region R1.

In each of the first to third embodiments, the cathode unit comprises 22 the magnetic circuit scanning unit 29 , However, the cathode unit 22 the magnetic circuit scanning unit 29 exclude. More specifically, the cathode unit 22 be configured so that the position of each erosion area with respect to the target 23 is fixed. Even with this configuration, the same advantages as the advantages (2), (3) can be obtained as long as each shielding plate 28a does not allow sputtering particles SP having an incident angle θ of 30 ° or less to reach the formation region R1.

In the cathode unit 22 In the second embodiment, the second shield plate 28b allow sputtering particles SP from the first erosion region E1 of the first cathode 22A are emitted and have an incident angle θ of 9 ° or less, reach the formation region R1. In addition, the first shielding plate 28a allow sputtering particles SP from the second erosion region E1 of the second cathode 22B are emitted and have an incident angle θ of 9 ° or less, reach the formation region R1. In these configurations, advantage (2) can be obtained provided the first shielding plate 28a does not allow sputtering particles SP, that of the first erosion area E1 of the first cathode 22A are emitted and have an incident angle θ of 30 ° or less, reach the formation region R1. In addition, advantage ( 3 ), provided the second shielding plate 28b does not allow sputtering particles SP, that of the second erosion region E2 of the second cathode 22B are emitted and have an incident angle θ of 30 ° or less, reach the formation region R1.

In each of the first to third embodiments, the second shield plate 28b be configured so that it only allows sputtering particles SP, that of the erosion area, that of the second shielding plate 28b is closest to one another and has an angle of incidence θ of less than 30 °, reach the formation region R1. Even with this configuration, the variation in composition of the composite film can be compared with a configuration including the second shield plate 28b excludes, be reduced, provided that the cathode unit 22 the second shielding plate 28b includes.

The projection width of the first shielding plate 28a does not have to be the same as the projection width of the second shielding plate 28b , The projection width of the first shielding plate 28a may be smaller than the projection width of the second shielding plate 28b ,

In each of the first to third embodiments, the cathode unit 22 the second shielding plate 28b exclude. Even in this configuration, the incident angle θ of at least the sputtering particles SP first reaching the formation region R1 is restricted, as far as the first shielding plate 28a is included. Therefore, advantage (2) can be obtained.

In each of the first to third embodiments, the first shield plate 28a be configured so as not only to allow the sputtering particles SP having an incident angle θ of less than 30 ° to reach the formation region R1. Even with this configuration, advantage (2) can be achieved at least as far as the cathode unit 22 the first shielding plate 28a includes.

In each of the first to third embodiments, when the cathode unit 22 is in the end position En, the distance between the second end Re2 of the formation region R1 and the second end 23e2 of the target 23 which is closest to the second end Re2 of the forming region R1 in the scanning direction may not be 150 mm. Even with this configuration, advantage (1) can be obtained, provided that the cathode unit 22 is in the start position St, the distance between the first end Re1 of the formation region R1 and the second end 23e2 of the target 23 which is closest to the first end Re2 of the formation region R1 in the scan direction, 150 mm is.

The sputtering device 10 does not need the loading and unloading chamber 11 and the preprocessing chamber 12 , Unless the sputtering device 10 the sputtering chamber 13 includes, the advantages described above can be achieved. Alternatively, the sputtering device 10 be configured so that there are a variety of reprocessing chambers 12 includes.

In the substrate S, the length in the transfer direction and the length to the front of the plane of the drawings are not limited as described above and may be changed.

The sputtering gas may be another noble gas than the argon gas, for example, a helium gas, a neon gas, a cryptone gas, or a xenon gas. In addition, the reaction gas may be a gas containing oxygen other than oxygen gas, a nitrogen-containing gas, or the like, and may be in conformity with the composite film contained in the sputtering chamber 13 is formed, changed.

The cathode unit 22 The second embodiment may be configured to include three or more cathodes, each of which is the target 23 includes, the clamping plate 24 , the magnetic circuit 25 , the AC power supply 26A , and the magnetic circuit scanning unit 29 ,

The sputtering chamber 13 The third embodiment may be configured to be two pieces of the cathode unit 22 of the second embodiment, that is, the cathode unit 22 includes the first cathode 22A and the second cathode 22B ,

The condition in forming the IGZO film is not limited to the condition described in the above-mentioned embodiments and therefore can be changed. The condition only needs to allow the IGZO film to be formed on the surface Sa of the substrate S.

As in 20 is shown, the sputtering device in a cluster-like sputtering device 50 be used. In this configuration, the sputtering device includes 50 a transfer chamber 51 in which a transfer robot 51R is installed, and chambers containing the transfer chamber 51 are connected and described below. More specific is the transfer chamber 51 with a loading and unloading chamber 52 through which a substrate is formed before forming the film from outside the sputtering apparatus 50 and a substrate after forming the film from the sputtering apparatus 50 is transferred out, a Vorverarbeitungskammer 53 which performs the preprocessing necessary for forming the film on the substrate, and a sputtering chamber 54 which forms a composite film on the substrate.

LIST OF REFERENCE NUMBERS

10, 50

 sputtering

11, 52

 Loading and unloading chamber

12, 53

 Vorverarbeitungskammer

13, 54

 sputtering

14

 Through valve

15

 Gas discharge unit

16

 Filming track

17

 Return track

18

 cathode device

19

 Lane change unit

21

 gas supply

22

 cathode unit

22A

 First cathode

22B

 Second cathode

23, TG

 target

23a, TGs

 surface

23e1

 First end

23e2

 Second end

24

 platen

25

 magnetic circuit

26A

 AC power supply

26D

 DC power supply

27

 scan unit

28a

 First shielding plate

28b

 Second shielding plate

28c

 Third shielding plate

29

 Magnetic circuit-scanning unit

31

 First unit

32

 Second unit

40

 thin-film transistor

41

 Gate electrode

42

 Gate oxide film

43

 channel layer

44

 Source electrode

45

 Drain

51

 transfer chamber

51R

 transfer robot

B

 Magnetron magnetic field

D1

 distance

e

 erosion area

E1

 First erosion area

E2

 Second erosion area

s

 end position

F

 trajectory

lv

 normal line

M1

 opposite shielding plate

M2, M3

 shield

P1

 First position

P2

 Second position

Pid

 Imaginary level

R1

 education

R2

 Opposite area

Re1

 First end

Re2

 Second end

S

 substratum

Sat.

 surface

SP

 sputter

St

 starting position

T

 carrier

θ, θ1, θ2, θ3, θ4

 angle of incidence

Claims (8)

 Apparatus for reactive sputtering comprising: a cathode device that emits sputtering particles toward a formation region of a composite film to be formed on a film forming article, wherein: an empty space opposite the education area defines an opposite area; the cathode device comprises: a scanning unit that scans an erosion area in the opposite area, and a target on which the erosion region is formed, the target being shorter than the opposite region in a scanning direction; and the scanning unit scans the erosion area toward the opposite area from a start position located at a distance between a first end of the formation area in the scanning direction that is one of two ends of the formation area in the scanning direction and reaches the sputter particles first and a first end of the target located immediately adjacent to the first end of the formation area in the scanning direction is 150 mm or larger in the scanning direction. A reactive sputtering apparatus according to claim 1, wherein: the erosion area is one of two erosion areas formed on the target; which include two erosion areas a first erosion area located immediately adjacent the first end of the educational area at the starting position, and a second erosion area remote from the first end of the formation area at the start position; the cathode device includes a shield located at the start position between the first end of the target and the first end of the formation region in the scanning direction; and the shield prevents those of the sputtering particles emitted from the first erosion region in a direction in which the target is moving and having an incident angle of 30 ° or less at the formation region to reach the formation region.  A reactive sputtering apparatus according to claim 2, wherein: the shield is a first shield, which is one of two shields; the other of the two shields is a second shield located farther from the formation area than a second end of the target, which is an end remote from the formation area in the scan direction, at the start position; and the second shield prevents those of the sputtering particles emitted from the second erosion region in the direction opposite to the moving direction of the target and having an incident angle of 30 ° or less at the formation region from reaching the formation region.  A reactive sputtering apparatus according to claim 3, wherein: the target is one of two targets arranged side by side in the scanning direction; which include two targets a first target, which is located immediately next to the education area at the starting position, and a second target farther away from the formation region than the first target; and the second shield prevents those of the sputtering particles emitted from the first erosion region of the first target in a direction opposite to the direction in which the target is moving and having an incident angle of 9 ° or less at the formation region Reach educational area. A reactive sputtering apparatus according to any one of claims 1 to 4, wherein: the cathode device comprises: a magnetic circuit forming the erosion circle on the target, the magnetic circuit and the formation region being on opposite sides of the target, and a magnetic circuit scan unit; scanning the magnetic circuit between a first end and a second end of the target in the scanning direction; and At the start position, the magnetic circuit scanning unit arranges the magnetic circuit in a position in which the magnetic circuit overlaps with the first end of the target in the scanning direction.  The reactive sputtering apparatus according to claim 5, wherein when the scanning unit passes the target once through the opposite area, the magnetic circuit scanning unit scans the magnetic circuit once from the first end of the target to the second end of the target.  The reactive sputtering apparatus of claim 4, wherein the cathode device comprises a third shield located between the two targets in the scanning direction.  A reactive sputtering apparatus according to any one of claims 1 to 7, wherein: the cathode device is one of two cathode devices; the two cathode devices are differentiated by a major component of a material forming the target included in each of the cathode devices; and wherein, when the scanning unit scans one of the two cathode devices, the scanning unit does not scan the other cathode device.

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