DE112012004032A5 - Elektrisch isolierendes Harz-Gehäuse für Halbleiterbauelemente oder Baugruppen und Herstellungsverfahren mit einem Mold-Prozess - Google Patents

Elektrisch isolierendes Harz-Gehäuse für Halbleiterbauelemente oder Baugruppen und Herstellungsverfahren mit einem Mold-Prozess Download PDF

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Publication number
DE112012004032A5
DE112012004032A5 DE112012004032.5T DE112012004032T DE112012004032A5 DE 112012004032 A5 DE112012004032 A5 DE 112012004032A5 DE 112012004032 T DE112012004032 T DE 112012004032T DE 112012004032 A5 DE112012004032 A5 DE 112012004032A5
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DE
Germany
Prior art keywords
assemblies
semiconductor devices
electrically insulating
molding process
insulating resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE112012004032.5T
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English (en)
Inventor
Anmelder Gleich
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of DE112012004032A5 publication Critical patent/DE112012004032A5/de
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/565—Moulds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3135—Double encapsulation or coating and encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
DE112012004032.5T 2011-09-27 2012-09-27 Elektrisch isolierendes Harz-Gehäuse für Halbleiterbauelemente oder Baugruppen und Herstellungsverfahren mit einem Mold-Prozess Withdrawn DE112012004032A5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102011053997 2011-09-27
DE102011053997.2 2011-09-27
PCT/IB2012/055168 WO2013061183A1 (de) 2011-09-27 2012-09-27 Elektrisch isolierendes harz - gehäuse für halbleiterbauelemente oder baugruppen und herstellungsverfahren mit einem moldprozess

Publications (1)

Publication Number Publication Date
DE112012004032A5 true DE112012004032A5 (de) 2014-07-24

Family

ID=47148873

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112012004032.5T Withdrawn DE112012004032A5 (de) 2011-09-27 2012-09-27 Elektrisch isolierendes Harz-Gehäuse für Halbleiterbauelemente oder Baugruppen und Herstellungsverfahren mit einem Mold-Prozess

Country Status (2)

Country Link
DE (1) DE112012004032A5 (de)
WO (1) WO2013061183A1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107768362B (zh) * 2013-03-28 2020-09-08 东芝北斗电子株式会社 发光装置及其制造方法
DE102014111930A1 (de) 2014-08-20 2016-02-25 Rupprecht Gabriel Thermisch gut leitendes, elektrisch isolierendes Gehäuse mit elektronischen Bauelementen und Herstellverfahren
CN105990297A (zh) * 2015-01-28 2016-10-05 苏州普福斯信息科技有限公司 不对等模腔配合无下沉导线框的结构
CN113113315B (zh) * 2020-01-13 2023-03-31 珠海零边界集成电路有限公司 一种防止智能功率模块溢胶的方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1346993A (en) * 1970-05-20 1974-02-13 Dowty Seals Ltd Method for the production of shaped articles
JPS58138039A (ja) * 1982-02-10 1983-08-16 Nec Home Electronics Ltd 樹脂封止型半導体装置の製造方法
DE10024415A1 (de) * 2000-05-19 2001-11-22 Erich Schuermann Befüllvorrichtung
DE10213296B9 (de) * 2002-03-25 2007-04-19 Infineon Technologies Ag Elektronisches Bauteil mit einem Halbleiterchip, Verfahren zu seiner Herstellung und Verfahren zur Herstellung eines Nutzens
JP3740116B2 (ja) * 2002-11-11 2006-02-01 三菱電機株式会社 モールド樹脂封止型パワー半導体装置及びその製造方法
JP2007165426A (ja) 2005-12-12 2007-06-28 Mitsubishi Electric Corp 半導体装置
CN101755328B (zh) * 2007-07-19 2011-08-31 积水化学工业株式会社 电子器件用胶粘剂
JP5184543B2 (ja) * 2007-09-26 2013-04-17 三菱電機株式会社 熱伝導性シート及びパワーモジュール
JP5308107B2 (ja) * 2008-09-11 2013-10-09 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 回路装置の製造方法

Also Published As

Publication number Publication date
WO2013061183A1 (de) 2013-05-02

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Legal Events

Date Code Title Description
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee