DE112007003753A5 - Organischer Feldeffekttransistor basierend auf einem löslichen Fullerenderivat - Google Patents

Organischer Feldeffekttransistor basierend auf einem löslichen Fullerenderivat Download PDF

Info

Publication number
DE112007003753A5
DE112007003753A5 DE112007003753T DE112007003753T DE112007003753A5 DE 112007003753 A5 DE112007003753 A5 DE 112007003753A5 DE 112007003753 T DE112007003753 T DE 112007003753T DE 112007003753 T DE112007003753 T DE 112007003753T DE 112007003753 A5 DE112007003753 A5 DE 112007003753A5
Authority
DE
Germany
Prior art keywords
field effect
effect transistor
organic field
fullerene derivative
transistor based
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE112007003753T
Other languages
English (en)
Inventor
Steffi Sensfuss
Lars Blankenburg
Mario SCHRÖDNER
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thueringisches Institut fuer Textil und Kunststoff Forschung eV
Original Assignee
Thueringisches Institut fuer Textil und Kunststoff Forschung eV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thueringisches Institut fuer Textil und Kunststoff Forschung eV filed Critical Thueringisches Institut fuer Textil und Kunststoff Forschung eV
Publication of DE112007003753A5 publication Critical patent/DE112007003753A5/de
Withdrawn legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/211—Fullerenes, e.g. C60
    • H10K85/215—Fullerenes, e.g. C60 comprising substituents, e.g. PCBM
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H10K10/488—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising a layer of composite material having interpenetrating or embedded materials, e.g. a mixture of donor and acceptor moieties, that form a bulk heterojunction

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Thin Film Transistor (AREA)
DE112007003753T 2007-11-13 2007-11-13 Organischer Feldeffekttransistor basierend auf einem löslichen Fullerenderivat Withdrawn DE112007003753A5 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/DE2007/002061 WO2009062457A1 (de) 2007-11-13 2007-11-13 Organischer feldeffekttransistor basierend auf einem löslichen fullerenderivat

Publications (1)

Publication Number Publication Date
DE112007003753A5 true DE112007003753A5 (de) 2010-10-21

Family

ID=39183035

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112007003753T Withdrawn DE112007003753A5 (de) 2007-11-13 2007-11-13 Organischer Feldeffekttransistor basierend auf einem löslichen Fullerenderivat

Country Status (2)

Country Link
DE (1) DE112007003753A5 (de)
WO (1) WO2009062457A1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2519782C2 (ru) * 2011-06-01 2014-06-20 Учреждение Российской Академии Наук Институт Проблем Химической Физики Ран (Ипхф Ран) Способ получения циклопропановых производных фуллеренов, применение органических производных фуллеренов в качестве материалов для электронных полупроводниковых устройств, органического полевого транзистора, органической фотовольтаической ячейки, органический полевой транзистор и органическая фотовольтаическая ячейка
KR102051338B1 (ko) 2012-04-05 2019-12-03 노발레드 게엠베하 유기 전계 효과 트랜지스터 및 이를 제조하기 위한 방법
EP2658006B1 (de) * 2012-04-27 2015-05-20 Novaled GmbH Organischer Feldeffekttransistor
WO2014014375A1 (en) * 2012-07-19 2014-01-23 Optogan Organic Lightning Solutions, Limited Liability Company Enhanced mobility field-effect transistors based on polymer film containing inorganic nanoparticles

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1306909A1 (de) * 2001-10-24 2003-05-02 Interuniversitair Micro-Elektronica Centrum Ambipolarer organischer Transistor
GB0413398D0 (en) * 2004-06-16 2004-07-21 Koninkl Philips Electronics Nv Electronic device

Also Published As

Publication number Publication date
WO2009062457A1 (de) 2009-05-22

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Legal Events

Date Code Title Description
8139 Disposal/non-payment of the annual fee