DE112006003227A5 - Isolationsgrabenkreuzungsstruktur mit reduzierter Spaltweite - Google Patents

Isolationsgrabenkreuzungsstruktur mit reduzierter Spaltweite Download PDF

Info

Publication number
DE112006003227A5
DE112006003227A5 DE112006003227T DE112006003227T DE112006003227A5 DE 112006003227 A5 DE112006003227 A5 DE 112006003227A5 DE 112006003227 T DE112006003227 T DE 112006003227T DE 112006003227 T DE112006003227 T DE 112006003227T DE 112006003227 A5 DE112006003227 A5 DE 112006003227A5
Authority
DE
Germany
Prior art keywords
gap width
isolation trench
reduced gap
intersection structure
trench intersection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE112006003227T
Other languages
English (en)
Inventor
Ralf Lerner
Uwe Eckholdt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
X Fab Semiconductor Foundries GmbH
Original Assignee
X Fab Semiconductor Foundries GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by X Fab Semiconductor Foundries GmbH filed Critical X Fab Semiconductor Foundries GmbH
Publication of DE112006003227A5 publication Critical patent/DE112006003227A5/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
DE112006003227T 2005-12-10 2006-12-08 Isolationsgrabenkreuzungsstruktur mit reduzierter Spaltweite Withdrawn DE112006003227A5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102005059034A DE102005059034B4 (de) 2005-12-10 2005-12-10 SOI-Isolationsgrabenstrukturen
DE102005059034.9 2005-12-10
PCT/EP2006/069498 WO2007065953A1 (de) 2005-12-10 2006-12-08 Isolationsgrabenkreuzungsstruktur mit reduzierter spaltweite

Publications (1)

Publication Number Publication Date
DE112006003227A5 true DE112006003227A5 (de) 2008-11-06

Family

ID=37852306

Family Applications (2)

Application Number Title Priority Date Filing Date
DE102005059034A Active DE102005059034B4 (de) 2005-12-10 2005-12-10 SOI-Isolationsgrabenstrukturen
DE112006003227T Withdrawn DE112006003227A5 (de) 2005-12-10 2006-12-08 Isolationsgrabenkreuzungsstruktur mit reduzierter Spaltweite

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE102005059034A Active DE102005059034B4 (de) 2005-12-10 2005-12-10 SOI-Isolationsgrabenstrukturen

Country Status (5)

Country Link
US (1) US20090294893A1 (de)
EP (1) EP1958250A1 (de)
JP (1) JP2009518839A (de)
DE (2) DE102005059034B4 (de)
WO (1) WO2007065953A1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007029756A1 (de) * 2007-06-27 2009-01-02 X-Fab Semiconductor Foundries Ag Halbleiterstruktur zur Herstellung eines Trägerwaferkontaktes in grabenisolierten SOI-Scheiben
DE102008029235B3 (de) 2008-06-19 2009-10-08 X-Fab Semiconductor Foundries Ag Kreuzungen von Isolationsgräben der SOI-Technologie
JP5527964B2 (ja) * 2008-12-15 2014-06-25 ルネサスエレクトロニクス株式会社 半導体装置の製造方法及び半導体装置
FR3046292B1 (fr) * 2015-12-24 2018-02-16 Aledia Circuit electronique comprenant des tranchees d'isolation electrique

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6216572A (ja) * 1985-07-15 1987-01-24 Tdk Corp 縦形半導体装置およびその製造方法
US5059550A (en) * 1988-10-25 1991-10-22 Sharp Kabushiki Kaisha Method of forming an element isolating portion in a semiconductor device
US5072266A (en) * 1988-12-27 1991-12-10 Siliconix Incorporated Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry
US5196373A (en) * 1990-08-06 1993-03-23 Harris Corporation Method of making trench conductor and crossunder architecture
US5410170A (en) * 1993-04-14 1995-04-25 Siliconix Incorporated DMOS power transistors with reduced number of contacts using integrated body-source connections
US5734192A (en) * 1995-12-22 1998-03-31 International Business Machines Corporation Trench isolation for active areas and first level conductors
JP3972414B2 (ja) * 1997-06-20 2007-09-05 ソニー株式会社 データ判定回路およびデータ判定方法
JP3329707B2 (ja) * 1997-09-30 2002-09-30 株式会社東芝 半導体装置
US5877521A (en) * 1998-01-08 1999-03-02 International Business Machines Corporation SOI active pixel cell design with grounded body contact
JP4066574B2 (ja) * 1999-03-04 2008-03-26 富士電機デバイステクノロジー株式会社 半導体装置の製造方法
US6464306B2 (en) * 2001-02-27 2002-10-15 Delphi Technologies, Inc. Brake pedal feel emulator with integral force and travel sensors
US6621107B2 (en) * 2001-08-23 2003-09-16 General Semiconductor, Inc. Trench DMOS transistor with embedded trench schottky rectifier

Also Published As

Publication number Publication date
JP2009518839A (ja) 2009-05-07
EP1958250A1 (de) 2008-08-20
US20090294893A1 (en) 2009-12-03
WO2007065953A1 (de) 2007-06-14
DE102005059034B4 (de) 2007-10-11
DE102005059034A1 (de) 2007-06-14

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Legal Events

Date Code Title Description
R005 Application deemed withdrawn due to failure to request examination

Effective date: 20131210