DE1083938C2 - - Google Patents

Info

Publication number
DE1083938C2
DE1083938C2 DE1958N0015611 DEN0015611A DE1083938C2 DE 1083938 C2 DE1083938 C2 DE 1083938C2 DE 1958N0015611 DE1958N0015611 DE 1958N0015611 DE N0015611 A DEN0015611 A DE N0015611A DE 1083938 C2 DE1083938 C2 DE 1083938C2
Authority
DE
Germany
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE1958N0015611
Other languages
German (de)
Other versions
DE1083938B (de
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of DE1083938B publication Critical patent/DE1083938B/de
Application granted granted Critical
Publication of DE1083938C2 publication Critical patent/DE1083938C2/de
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861Diodes
    • H01L29/88Tunnel-effect diodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C7/00Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73Bipolar junction transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861Diodes
    • H01L29/864Transit-time diodes, e.g. IMPATT, TRAPATT diodes
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/02Conversion of ac power input into dc power output without possibility of reversal
    • H02M7/04Conversion of ac power input into dc power output without possibility of reversal by static converters
    • H02M7/06Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes without control electrode or semiconductor devices without control electrode

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Electrodes Of Semiconductors (AREA)
DEN15611A 1957-09-23 1958-09-20 Halbleiteranordnung mit einem Halbleiter-koerper aus Halbleitermaterial eines Leitungstyps Granted DE1083938B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB2980057A GB849477A (en) 1957-09-23 1957-09-23 Improvements in or relating to semiconductor control devices

Publications (2)

Publication Number Publication Date
DE1083938B DE1083938B (de) 1960-06-23
DE1083938C2 true DE1083938C2 (nl) 1960-12-15

Family

ID=10297363

Family Applications (1)

Application Number Title Priority Date Filing Date
DEN15611A Granted DE1083938B (de) 1957-09-23 1958-09-20 Halbleiteranordnung mit einem Halbleiter-koerper aus Halbleitermaterial eines Leitungstyps

Country Status (3)

Country Link
DE (1) DE1083938B (nl)
FR (1) FR1210386A (nl)
GB (1) GB849477A (nl)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL258921A (nl) * 1959-12-14
US3154450A (en) * 1960-01-27 1964-10-27 Bendix Corp Method of making mesas for diodes by etching
NL267818A (nl) * 1960-08-02
NL276298A (nl) * 1961-04-03 1900-01-01
NL275667A (nl) * 1961-04-28
DE1232267B (de) * 1961-05-27 1967-01-12 Telefunken Patent Verfahren zur Herstellung eines Halbleiterbauelementes mit Mesastruktur
DE1171538B (de) * 1961-06-02 1964-06-04 Telefunken Patent Halbleiteranordnung mit mindestens zwei Legierungselektroden auf einer Oberflaeche des Halbleiterkoerpers
US3150021A (en) * 1961-07-25 1964-09-22 Nippon Electric Co Method of manufacturing semiconductor devices
DE1282190B (de) * 1964-03-12 1968-11-07 Kabusihiki Kaisha Hitachi Seis Verfahren zum Herstellen von Transistoren
DE2926757C2 (de) * 1979-07-03 1983-08-04 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Halbleiteranordnung mit negativem differentiellen Widerstand
JP5305993B2 (ja) * 2008-05-02 2013-10-02 キヤノン株式会社 容量型機械電気変換素子の製造方法、及び容量型機械電気変換素子
JP5317826B2 (ja) * 2009-05-19 2013-10-16 キヤノン株式会社 容量型機械電気変換素子の製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE525428A (nl) * 1952-12-30
BE527570A (nl) * 1953-05-21
NL198572A (nl) * 1954-07-27
FR1131253A (fr) * 1955-09-14 1957-02-19 Csf Perfectionnements aux transistors à effet de champ

Also Published As

Publication number Publication date
DE1083938B (de) 1960-06-23
FR1210386A (fr) 1960-03-08
GB849477A (en) 1960-09-28

Similar Documents

Publication Publication Date Title
IT597065A (nl)
DE1083938C2 (nl)
AT205766B (nl)
BE568581A (nl)
BE565729A (nl)
BE572175A (nl)
BE571577A (nl)
BE571574A (nl)
BE571381A (nl)
BE571367A (nl)
BE571190A (nl)
BE570953A (nl)
BE570183A (nl)
BE569138A (nl)
BE568116A (nl)
BE563998A (nl)
BE563969A (nl)
BE561408A (nl)
BE560882A (nl)
BE556383A (nl)
LU35561A1 (nl)
BE572526A (nl)
BE568934A (nl)
BE568830A (nl)
BE566969A (nl)