DE1083438B - Transistor arrangement enclosed by a metal housing - Google Patents
Transistor arrangement enclosed by a metal housingInfo
- Publication number
- DE1083438B DE1083438B DEI16468A DEI0016468A DE1083438B DE 1083438 B DE1083438 B DE 1083438B DE I16468 A DEI16468 A DE I16468A DE I0016468 A DEI0016468 A DE I0016468A DE 1083438 B DE1083438 B DE 1083438B
- Authority
- DE
- Germany
- Prior art keywords
- emitter
- collector
- base
- metal housing
- transistor arrangement
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/041—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction having no base used as a mounting for the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/4823—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a pin of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Die Bonding (AREA)
Description
DEUTSCHESGERMAN
Die Erfindung bezieht sich auf jeweils auf einem Sockel befestigte Transistoranordnungen, die von einem Metallgehäuse umschlossen sind. Das Gehäuse dient zum Schutz gegen äußere Einflüsse. Ein derartiges bekanntes Bauelement ist in Fig. 1 dargestellt. Es besteht aus dem Transistorelement 1 mit Emitter 2, Basis 3 und Kollektor 4. Diese sind wie üblich durch Anlöten der Zuführungsdrähte 5 und 6 an die Emitterbzw. Kollektorpille kontaktiert. Für den Basisanschluß ist außer dem Zuführ;ungsdraht 7 gewöhnlich noch das Basisblech 8 vorgesehen. Die Zuführungsdrähte laufen durch eine im Sockel 9 befindliche Durchführung 10 aus Isoliermaterial. Die gesamte Anordnung ist von einem Materialgehäuse 11 in Becherform umschlossen, das mit dem Sockel luftdicht verbunden wird. Der hohle Innenraum kann mit Isoliermaterial, beispielsweise mit Fett, ausgefüllt sein. Die während des Betriebes im Transistor erzeugte Wärme wird im wesentlichen über die Zuführungsdrähte und zum Teil über die Füllung an das Gehäuse abgeleitet. Man erreicht damit eine Ableitung von etwa 0,18° C/mW.The invention relates to transistor arrangements which are fastened to a base and which are enclosed by a metal housing. The housing serves to protect against external influences. Such a known component is shown in FIG. It consists of the transistor element 1 with emitter 2, base 3 and collector 4. These are as usual by soldering the lead wires 5 and 6 to the emitter or. Collector pill contacted. For the basic connection is in addition to the feed ; ungsdraht 7 usually still the base sheet 8 is provided. The lead wires run through a bushing 10 made of insulating material in the base 9. The entire arrangement is enclosed by a material housing 11 in the form of a cup, which is connected to the base in an airtight manner. The hollow interior can be filled with insulating material, for example with grease. The heat generated in the transistor during operation is essentially dissipated to the housing via the supply wires and partly via the filling. This achieves a derivative of about 0.18 ° C / mW.
Der Erfindung liegt die Aufgabe zugrunde, eine Verbesserung der Wärmeableitung bei Transistoranordnungen der beschriebenen Art zu erzielen. Erfindungsgemäß dient zur Kontaktierung der Emittter- bzw. Kollektorseite des Halbleiterelementes jeweils ein großflächiges, schiefwinkliges, senkrecht zur Halbleiteroberfläche und senkrecht zum Sockel angebrachtes Blech, dessen spitzwinklige Ecke die Emitter- bzw. Kollektorseite berührt, dessen untere Längskante jeweils mit dem Zuführungsdraht für den Emitterbzw. Kollektoranschluß verschweißt oder verlötet ist und dessen jeweils über den Sockel hinausragendes Ende so abgebogen ist, daß es mit seiner ganzen Fläche an der mit einer dünnen Isolierschicht versehenen Innenseite des Metallgehäuses federnd anliegt.The invention is based on the object of improving the heat dissipation in transistor arrangements of the type described. According to the invention, for contacting the emitter or collector side of the semiconductor element, a large-area, oblique-angled sheet metal attached perpendicular to the semiconductor surface and perpendicular to the base, whose acute-angled corner touches the emitter or collector side, whose lower longitudinal edge each with the lead wire for the emitter or collector, is used. Collector connection is welded or soldered and whose end protruding beyond the base is bent so that it rests resiliently with its entire surface on the inner side of the metal housing provided with a thin insulating layer.
Die Verwendung von Blechen in Halbleiteranordnungen ist an sich bekannt. Diese dienen gewohnlich der Zentrierung des Halbleiterelementes in der Gesamtanordnung. Häufig sind sie auch gleichzeitig als Basiselektrode ausgebildet. Ferner sind Anordnungen bekannt, bei denen eine als Blech augebildete Basiselektrode das Metallgehäuse berührt und dabei mit diesem einen guten Wärmekontakt herstellt. Dabei ist aber das Gehäuse elektrisch nicht neutral, was in vielen Fällen erwünscht ist.The use of metal sheets in semiconductor arrangements is known per se. These usually serve the centering of the semiconductor element in the overall arrangement. Often they are also at the same time designed as a base electrode. Furthermore, arrangements are known in which one is formed as a sheet metal Base electrode touches the metal housing and thereby establishes good thermal contact with it. However, the housing is not electrically neutral, which is desirable in many cases.
Die Verlustwärme wird nicht über ein Basisblech abgeleitet. Bei dieser Art der Wärmeableitung muß
vom Entstehungsort der Verlustwärme, der bekanntlich in der Kollektorsperrschicht liegt, ein verhältnismäßig
langer Weg durch relativ schlecht leitendes Material zurückgelegt werden. Wenn die Wärme-Von
einem Metallgehäuse umschlossene
TransistoranordnungThe heat loss is not dissipated via a base plate. With this type of heat dissipation, a relatively long path through relatively poorly conductive material must be covered from the place where the heat loss occurs, which is known to be in the collector barrier layer. When the heat-enclosed by a metal case
Transistor arrangement
Anmelder:
Intermetall Gesellschaft für MetallurgieApplicant:
Intermetall Society for Metallurgy
und Elektronik m. b. H.,
Freiburg (Breisgau), Hans-Bunte-Str. 19and Electronics mb H.,
Freiburg (Breisgau), Hans-Bunte-Str. 19th
Georges Calon, Freiburg (Breisgau),
ist als Erfinder genannt wordenGeorges Calon, Freiburg (Breisgau),
has been named as the inventor
ableitung gemäß der Erfindung über Kollektor und Emitter erfolgt, ist der Weg wesentlich kürzer und damit ein geringerer Wärmewiderstand zu überwinden. Derivation takes place according to the invention via the collector and emitter, the path is much shorter and to overcome a lower thermal resistance.
Im folgenden wird die Erfindung an Hand eines in den Fig. 2 und 3 dargestellten Ausführungsbeispiels näher erläutert.In the following the invention will be described with reference to an embodiment shown in FIGS explained in more detail.
Fig. 2 stellt einen senkrechten Querschnitt durch einen Sockel mit einer Transistoranordnung nach der Erfindung dar;FIG. 2 shows a vertical cross section through a base with a transistor arrangement according to FIG Invention represent;
Fig. 3 zeigt den Aufbau einer Transistoranordnung mit den Merkmalen der Erfindung im Grundriß.Fig. 3 shows the structure of a transistor arrangement with the features of the invention in plan.
Gleiche Teile sind mit den gleichen Bezugszeichen wie bei der die bekannte Anordnung darstellenden Fig. 1 versehen und werden nicht nochmals aufgeführt.Identical parts are given the same reference numerals as those used for the known arrangement Fig. 1 and are not listed again.
Nach der Erfindung werden die Zuführungsdrähte 5 und 6 zur Emitter- bzw. Kollektorpille 2 und 4 gekürzt. Die Verbindung zwischen den Zuführungsdrähten und Emitter- bzw. Kollektorpille wird durch das Blech 12 hergestellt, das in Fig. 2 nur für den Kollektoranschluß eingezeichnet ist. In gleicher Weise wird auch ein Blech für den Emitteranschluß angebracht. Das Blech besteht beispielsweise aus einer dünnen Silberfolie und steht senkrecht zur Halbleiteroberfläche und senkrecht zur Sockelfläche. Es ist in seinen Abmessungen so gehalten, daß die obere spitzwinklig geschnittene Ecke 13 die Kollektor- bzw. Emitterpille 4 bzw. 2 berührt und dabei die untere Kante in Höhe der Zuführungsdrahtenden 6 bzw. 5 liegt.According to the invention, the lead wires 5 and 6 to the emitter and collector pellets 2 and 4 are shortened. The connection between the lead wires and the emitter or collector pill is through the sheet 12 produced, which is shown in Fig. 2 only for the collector connection. In the same way a plate for the emitter connection is also attached. The sheet consists, for example, of one thin silver foil and is perpendicular to the semiconductor surface and perpendicular to the base surface. It is in held its dimensions so that the upper corner cut at an acute angle 13 the collector or Emitter pill 4 or 2 touches and thereby the lower edge at the level of the lead wire ends 6 or 5 lies.
Wie aus Fig. 2 zu entnehmen ist, ragt das eine Ende des Silberbleches 12 über den Rand des Sokkels 9 hinaus.As can be seen from Fig. 2, one end of the silver sheet 12 protrudes over the edge of the base 9 addition.
Der Transistor wird zunächst mit dem Basisblech 8 an den Zuführungsdraht 7 angeschweißt. Anschließend werden an die Zuführungsdrähte zur Emitter- bzw.The transistor is first welded to the lead wire 7 with the base sheet 8. Afterward are attached to the lead wires to the emitter or
009 530/433009 530/433
Kollektorpille je eine Silberfahne 12 angeschweißt, und zwar so, daß diese mit der spitzwinkligen Ecke die zu kontaktierende Pille berührt.Collector pill each a silver flag 12 welded, in such a way that this with the acute-angled corner touches the pill to be contacted.
Wenn der Halbleiterkörper aus Germanium besteht und als Emitter- und Kollektorpille Indium verwendet wird, hat es sich als vorteilhaft erwiesen, die die Pille kontaktierende Ecke der Silberfahne mit einem aus Indium und Zinn bestehendem Überzug zu versehen. Die Indiumteile von Pille und Blech verbinden sich bereits bei der Berührung miteinander und geben einen guten Halt. Außerdem werden aber in jedem Falle Pillen und Silberfähne miteinander verlötet.When the semiconductor body is made of germanium and uses indium as emitter and collector pill it has been found to be advantageous to touch the corner of the silver flag that is in contact with the pill with a to provide a coating consisting of indium and tin. Connect the indium parts of the pill and sheet metal when they touch each other and give a good grip. But also in each Trap pills and silver plumes soldered together.
Das überstehende Ende der Silberfahne wird in Höhe des Sockelrandes abgeknickt und zylinderförmig gebogen (Fig. 3). Es kann das in einer automatischen Vorrichtung geschehen.The protruding end of the silver flag is bent at the height of the base edge and becomes cylindrical curved (Fig. 3). This can be done in an automatic device.
Das Gehäuse 11 ist an seiner Innenseite mit einer dünnen Isolierschicht 15 (Fig. 3) versehen. Es können zu diesem Zweck dünne Glimmerfolien oder ein geeigneter Isolierlack verwendet werden. Die auf dem Sockel befestigte Transistoranordnung wird in das Gehäuse eingeführt, indem dieEnden der Silberfahnen leicht zusammengedrückt werden. Da die Enden anschließend wieder nach außen federn, legen sie sich mit ihrer ganzen Fläche an die Isolierschicht 15 an und erzeugen so einen relativ guten Wärmekontakt.The inside of the housing 11 is provided with a thin insulating layer 15 (FIG. 3). It can thin mica foils or a suitable insulating varnish can be used for this purpose. The one on the Socket attached transistor assembly is inserted into the housing by holding the ends of the silver tabs be easily squeezed. Since the ends then spring outwards again, they lie down with their entire surface to the insulating layer 15 and thus produce a relatively good thermal contact.
Mit Transistoranordnungen, die die Merkmale der Erfindung aufweisen, wurde eine etwa fünfmal größere Wärmeableitung erzielt als bei den eingangs beschriebenen bekannten Anordnungen.With transistor assemblies having the features of the invention, an approximately five times greater heat dissipation achieved than in the known arrangements described above.
Claims (2)
Deutsche Auslegeschrift Nr. 1 048 358;
deutsches Gebrauchsmuster Nr. 1 784 807.Considered publications:
German Auslegeschrift No. 1 048 358;
German utility model No. 1 784 807.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEI16468A DE1083438B (en) | 1959-05-23 | 1959-05-23 | Transistor arrangement enclosed by a metal housing |
| FR815079A FR1244736A (en) | 1959-05-23 | 1960-01-07 | Semiconductor device, in particular transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEI16468A DE1083438B (en) | 1959-05-23 | 1959-05-23 | Transistor arrangement enclosed by a metal housing |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1083438B true DE1083438B (en) | 1960-06-15 |
Family
ID=7185947
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEI16468A Pending DE1083438B (en) | 1959-05-23 | 1959-05-23 | Transistor arrangement enclosed by a metal housing |
Country Status (2)
| Country | Link |
|---|---|
| DE (1) | DE1083438B (en) |
| FR (1) | FR1244736A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1168568B (en) * | 1961-07-26 | 1964-04-23 | Telefunken Patent | Process for the production of alloy electrodes for semiconductor devices |
| DE1206089B (en) * | 1960-10-01 | 1965-12-02 | Telefunken Patent | Process for producing a transistor with alloyed electrodes and transistor produced according to this process |
| DE1232267B (en) * | 1961-05-27 | 1967-01-12 | Telefunken Patent | Process for the production of a semiconductor component with a mesa structure |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1048358B (en) * | 1955-08-12 | 1959-01-08 | ||
| DE1784807A1 (en) * | 1968-09-20 | 1971-11-11 | Strabag Bau Ag | Butt joint for reinforcement of prefabricated structural parts |
-
1959
- 1959-05-23 DE DEI16468A patent/DE1083438B/en active Pending
-
1960
- 1960-01-07 FR FR815079A patent/FR1244736A/en not_active Expired
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1048358B (en) * | 1955-08-12 | 1959-01-08 | ||
| DE1784807A1 (en) * | 1968-09-20 | 1971-11-11 | Strabag Bau Ag | Butt joint for reinforcement of prefabricated structural parts |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1206089B (en) * | 1960-10-01 | 1965-12-02 | Telefunken Patent | Process for producing a transistor with alloyed electrodes and transistor produced according to this process |
| DE1232267B (en) * | 1961-05-27 | 1967-01-12 | Telefunken Patent | Process for the production of a semiconductor component with a mesa structure |
| DE1168568B (en) * | 1961-07-26 | 1964-04-23 | Telefunken Patent | Process for the production of alloy electrodes for semiconductor devices |
Also Published As
| Publication number | Publication date |
|---|---|
| FR1244736A (en) | 1960-10-28 |
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