DE10344915A1 - Substrat mit darauf positionierten Nanopartikeln - Google Patents
Substrat mit darauf positionierten Nanopartikeln Download PDFInfo
- Publication number
- DE10344915A1 DE10344915A1 DE2003144915 DE10344915A DE10344915A1 DE 10344915 A1 DE10344915 A1 DE 10344915A1 DE 2003144915 DE2003144915 DE 2003144915 DE 10344915 A DE10344915 A DE 10344915A DE 10344915 A1 DE10344915 A1 DE 10344915A1
- Authority
- DE
- Germany
- Prior art keywords
- nanoparticles
- conductor
- near field
- positioning
- producing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000002105 nanoparticle Substances 0.000 title abstract 5
- 239000000758 substrate Substances 0.000 title abstract 5
- 239000004020 conductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title abstract 2
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
- H01L29/0669—Nanowires or nanotubes
- H01L29/0673—Nanowires or nanotubes oriented parallel to a substrate
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Composite Materials (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Abstract
Es wird ein Verfahren zur Herstellung von Substraten mit darauf positionierten Nanopartikeln bereitgestellt, wobei zunächst ein Substrat mit mindestens einem darauf angebrachten Leiter bereitgestellt wird, und an der Oberfläche mindestens eines Leiters ein Nahfeld, insbesondere ein elektromagnetisches Nahfeld, erzeugt wird. Mit Hilfe dieses Nahfelds werden Nanopartikel eingefangen und auf dem Substrat positioniert. Die Erzeugung des elektromagnetischen Nahfelds erfolgt vorteilhafterweise durch die Anregung von Plasmonen an der Oberfläche mindestens eines Leiters. Besonders bevorzugt ist es, daß die Plasmonen räumlich gezielt und gegebenenfalls auch zeitlich versetzt angeregt werden, so daß komplexe Muster von gleichen oder verschiedenen Nanopartikeln auf dem Substrat bereitgestellt werden können.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2003144915 DE10344915A1 (de) | 2003-09-17 | 2003-09-17 | Substrat mit darauf positionierten Nanopartikeln |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2003144915 DE10344915A1 (de) | 2003-09-17 | 2003-09-17 | Substrat mit darauf positionierten Nanopartikeln |
Publications (1)
Publication Number | Publication Date |
---|---|
DE10344915A1 true DE10344915A1 (de) | 2005-04-21 |
Family
ID=34353120
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE2003144915 Withdrawn DE10344915A1 (de) | 2003-09-17 | 2003-09-17 | Substrat mit darauf positionierten Nanopartikeln |
Country Status (1)
Country | Link |
---|---|
DE (1) | DE10344915A1 (de) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011028179A1 (en) * | 2009-09-02 | 2011-03-10 | Agency For Science, Technology And Research | A plasmonic detector and method for manufacturing the same |
WO2013029609A3 (de) * | 2011-08-31 | 2013-06-06 | Helmholtz-Zentrum Dresden - Rossendorf E.V. | Trägermaterial für elektrisch polarisierbare biomaterialien, polyelektrolytmaterialien, atome, ionen und moleküle; dessen herstellung und verwendung |
-
2003
- 2003-09-17 DE DE2003144915 patent/DE10344915A1/de not_active Withdrawn
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011028179A1 (en) * | 2009-09-02 | 2011-03-10 | Agency For Science, Technology And Research | A plasmonic detector and method for manufacturing the same |
US9329339B2 (en) | 2009-09-02 | 2016-05-03 | Agency For Science, Technology And Research | Plasmonic detector and method for manufacturing the same |
WO2013029609A3 (de) * | 2011-08-31 | 2013-06-06 | Helmholtz-Zentrum Dresden - Rossendorf E.V. | Trägermaterial für elektrisch polarisierbare biomaterialien, polyelektrolytmaterialien, atome, ionen und moleküle; dessen herstellung und verwendung |
US10088443B2 (en) | 2011-08-31 | 2018-10-02 | Helmholtz-Zentrum Dresden-Rossendorf E.V. | Carrier material for electrically polarizable biomaterials, polyelectrolyte materials, atoms, ions and molecules; its manufacture and use |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI265569B (en) | Plasma processing method | |
TW200611062A (en) | Apparatus, system and method to vary dimensions of a substrate during nano-scale manufacturing | |
WO2005014892A3 (en) | Coating | |
TWI319591B (en) | Method to produce semiconductor components and thin-film semiconductor components | |
WO2007019188A3 (en) | Manufacture of photovoltaic devices | |
TW200701372A (en) | Method of forming nanoclusters | |
TW200623322A (en) | A method to form an interconnect | |
DE10345302A1 (de) | Elektronisches Gerät sowie Verfahren zu seiner Herstellung | |
DE602004006234D1 (de) | Oberflächenbeschichtungsverfahren | |
SG131773A1 (en) | Method of dividing a non-metal substrate | |
TW200605197A (en) | Structure formation | |
WO2007024186A3 (en) | Interconnects and heat dissipators based on nanostructures | |
TWI266576B (en) | Electronic device and method for producing the same | |
MY147005A (en) | Method for bonding a semiconductor substrate to a metal subtrate | |
TW200503076A (en) | III-V compound semiconductor crystal and method for production thereof | |
WO2006132381A3 (en) | Functional film containing structure and method of manufacturing functional film | |
TW200721545A (en) | Method of forming organic material layer | |
TW200737589A (en) | Electronic device and antenna structure thereof | |
WO2007087769A3 (de) | Optoelektronisches halbleiterbauelement mit stromaufweitungsschicht | |
WO2004068538A3 (en) | Object-moving method, object-moving apparatus and production process using the method | |
PL1927275T3 (pl) | Szablon drukarski stosowany w procesie SMT i sposób jego powlekania | |
ATE546835T1 (de) | Verfahren zur herstellung eines leiterrahmens | |
TW200610778A (en) | Method to form a conductive structure | |
SG162751A1 (en) | Process for making a metal seed layer | |
WO2004105201A3 (en) | Semiconductor nanocrystal-based optical devices and method of preparing such devices |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8110 | Request for examination paragraph 44 | ||
R120 | Application withdrawn or ip right abandoned |
Effective date: 20140108 |