DE10335460A1 - CVD-Anlage und Verfahren zum Betreiben einer solchen CVD-Anlage - Google Patents

CVD-Anlage und Verfahren zum Betreiben einer solchen CVD-Anlage Download PDF

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Publication number
DE10335460A1
DE10335460A1 DE10335460A DE10335460A DE10335460A1 DE 10335460 A1 DE10335460 A1 DE 10335460A1 DE 10335460 A DE10335460 A DE 10335460A DE 10335460 A DE10335460 A DE 10335460A DE 10335460 A1 DE10335460 A1 DE 10335460A1
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DE
Germany
Prior art keywords
thin films
temperature profile
gas flow
vapor deposition
chemical vapor
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Granted
Application number
DE10335460A
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English (en)
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DE10335460B4 (de
Inventor
Henry Bernhardt
Reinhard Hummeltenberg
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Polaris Innovations Ltd
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Infineon Technologies AG
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Publication date
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Priority to DE10335460A priority Critical patent/DE10335460B4/de
Publication of DE10335460A1 publication Critical patent/DE10335460A1/de
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Publication of DE10335460B4 publication Critical patent/DE10335460B4/de
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Bei einer CVD-Anlage, die eine Reaktionskammer zum Aufnehmen einer Mehrzahl von hintereinander beabstandet angeordneten Halbleiterwafern, eine Gasführung zum Einleiten von Gasen in die Reaktionskammer und zum Führen der Gase an den hintereinander beabstandet angeordneten Halbleiterwafern entlang, eine Heizeinrichtung zum Ausbilden eines Temperaturprofils längs der hintereinander beabstandet angeordneten Halbleiterwafer und eine mit einer der Heizeinrichtung und der Gasführung verbundene Steuereinrichtung aufweist, wird die Beschichtung durch die Steuereinrichtung so ausgeführt, dass ein Temperaturprofil mit einem Temperaturgefälle in Strömungsrichtung der Gase in der Reaktionskammer für eine erste Zeitdauer ausgebildet wird und anschließend das Temperaturprofil mit dem Temperaturgefälle gegen die Strömungsrichtung der Gase in die Reaktionskammer für eine zweite Zeitdauer ausgebildet wird und während dieser zweiten Zeitdauer Gase zum Erzeugen der dünnen Schicht auf der Oberfläche der Halbleiterwafer durch pyrolytische Zersetzung eingeleitet werden.
DE10335460A 2003-08-02 2003-08-02 Verfahren zum Betreiben einer CVD-Anlage Expired - Fee Related DE10335460B4 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE10335460A DE10335460B4 (de) 2003-08-02 2003-08-02 Verfahren zum Betreiben einer CVD-Anlage

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE10335460A DE10335460B4 (de) 2003-08-02 2003-08-02 Verfahren zum Betreiben einer CVD-Anlage

Publications (2)

Publication Number Publication Date
DE10335460A1 true DE10335460A1 (de) 2005-03-10
DE10335460B4 DE10335460B4 (de) 2008-02-28

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5294572A (en) * 1989-03-06 1994-03-15 Asm International N.V. Method and apparatus for depositing a layer on a substrate
WO1998035531A1 (en) * 1997-01-27 1998-08-13 Semitool, Inc. Model based temperature controller for semiconductor thermal processors
WO2000012785A1 (en) * 1998-08-26 2000-03-09 Semitool, Inc. Low-temperature process for forming an epitaxial layer on a semiconductor substrate

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5294572A (en) * 1989-03-06 1994-03-15 Asm International N.V. Method and apparatus for depositing a layer on a substrate
WO1998035531A1 (en) * 1997-01-27 1998-08-13 Semitool, Inc. Model based temperature controller for semiconductor thermal processors
WO2000012785A1 (en) * 1998-08-26 2000-03-09 Semitool, Inc. Low-temperature process for forming an epitaxial layer on a semiconductor substrate

Also Published As

Publication number Publication date
DE10335460B4 (de) 2008-02-28

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OP8 Request for examination as to paragraph 44 patent law
8327 Change in the person/name/address of the patent owner

Owner name: QIMONDA AG, 81739 MUENCHEN, DE

8364 No opposition during term of opposition
R081 Change of applicant/patentee

Owner name: INFINEON TECHNOLOGIES AG, DE

Free format text: FORMER OWNER: QIMONDA AG, 81739 MUENCHEN, DE

Owner name: POLARIS INNOVATIONS LTD., IE

Free format text: FORMER OWNER: QIMONDA AG, 81739 MUENCHEN, DE

R081 Change of applicant/patentee

Owner name: POLARIS INNOVATIONS LTD., IE

Free format text: FORMER OWNER: INFINEON TECHNOLOGIES AG, 85579 NEUBIBERG, DE

R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee