DE10297015T5 - Double trench isolation for a phase change memory cell and method for its manufacture - Google Patents

Double trench isolation for a phase change memory cell and method for its manufacture Download PDF

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Publication number
DE10297015T5
DE10297015T5 DE10297015T DE10297015T DE10297015T5 DE 10297015 T5 DE10297015 T5 DE 10297015T5 DE 10297015 T DE10297015 T DE 10297015T DE 10297015 T DE10297015 T DE 10297015T DE 10297015 T5 DE10297015 T5 DE 10297015T5
Authority
DE
Germany
Prior art keywords
manufacture
memory cell
phase change
trench isolation
change memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE10297015T
Other languages
German (de)
Inventor
Daniel Xu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intel Corp
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of DE10297015T5 publication Critical patent/DE10297015T5/en
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76229—Concurrent filling of a plurality of trenches having a different trench shape or dimension, e.g. rectangular and V-shaped trenches, wide and narrow trenches, shallow and deep trenches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Patterning of the switching material
    • H10N70/063—Patterning of the switching material by etching of pre-deposited switching material layers, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8413—Electrodes adapted for resistive heating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
DE10297015T 2002-02-22 2002-02-22 Double trench isolation for a phase change memory cell and method for its manufacture Ceased DE10297015T5 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2002/005534 WO2003073511A1 (en) 2002-02-22 2002-02-22 Dual trench isolation for a phase-change memory cell and method of making same

Publications (1)

Publication Number Publication Date
DE10297015T5 true DE10297015T5 (en) 2004-10-07

Family

ID=27765153

Family Applications (1)

Application Number Title Priority Date Filing Date
DE10297015T Ceased DE10297015T5 (en) 2002-02-22 2002-02-22 Double trench isolation for a phase change memory cell and method for its manufacture

Country Status (5)

Country Link
KR (1) KR20040030723A (en)
CN (1) CN1533606A (en)
AU (1) AU2002248493A1 (en)
DE (1) DE10297015T5 (en)
WO (1) WO2003073511A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8828788B2 (en) 2010-05-11 2014-09-09 Micron Technology, Inc. Forming electrodes for chalcogenide containing devices
US11107985B2 (en) 2015-03-27 2021-08-31 Intel Corporation Materials and components in phase change memory devices

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Publication number Priority date Publication date Assignee Title
EP1965427A1 (en) 2007-02-28 2008-09-03 STMicroelectronics S.r.l. Array of vertical bipolar junction transistors, in particular selectors in a phase change memory device
US20090108249A1 (en) * 2007-10-31 2009-04-30 Fang-Shi Jordan Lai Phase Change Memory with Diodes Embedded in Substrate
US8030634B2 (en) * 2008-03-31 2011-10-04 Macronix International Co., Ltd. Memory array with diode driver and method for fabricating the same
US8586960B2 (en) * 2008-06-19 2013-11-19 International Business Machines Corporation Integrated circuit including vertical diode
US8502182B2 (en) * 2009-02-06 2013-08-06 Micron Technology, Inc. Memory device having self-aligned cell structure
CN101488514B (en) * 2009-02-23 2013-02-06 中国科学院上海微系统与信息技术研究所 Resistor conversion memory
CN101958337B (en) * 2009-07-16 2012-06-20 中芯国际集成电路制造(上海)有限公司 Phase change random access memory and manufacturing method thereof
CN101673755B (en) * 2009-09-23 2011-11-16 中国科学院上海微系统与信息技术研究所 Phase change memory cell utilizing composite structure diode and preparation method thereof
CN101866882B (en) * 2010-04-29 2012-02-29 中国科学院上海微系统与信息技术研究所 Phase change memory capable of inhibiting crosscurrent between gating diodes and preparation method thereof
CN102446806B (en) * 2010-10-13 2014-07-30 中芯国际集成电路制造(上海)有限公司 Manufacturing method for trench isolation structure of phase change memory
CN102446807B (en) * 2010-10-13 2014-09-24 中芯国际集成电路制造(上海)有限公司 Manufacturing method for trench isolation structure of phase change memory
CN102226988B (en) * 2011-05-27 2015-02-11 上海华虹宏力半导体制造有限公司 Double groove isolation structure formation method
CN102254853B (en) * 2011-08-01 2016-05-04 上海华虹宏力半导体制造有限公司 The formation method of two groove isolation constructions
CN102280405B (en) * 2011-08-01 2016-05-11 上海华虹宏力半导体制造有限公司 The formation method of two groove isolation constructions
KR20130043533A (en) 2011-10-20 2013-04-30 삼성전자주식회사 Non-volatile memory device having conductive buffer pattern and method of forming the same
CN102361022B (en) * 2011-11-02 2017-02-08 上海华虹宏力半导体制造有限公司 Method for manufacturing embedded flash memory
CN103296050B (en) * 2012-03-02 2015-10-14 中芯国际集成电路制造(上海)有限公司 Phase transition storage and manufacture method thereof
US9577192B2 (en) * 2014-05-21 2017-02-21 Sony Semiconductor Solutions Corporation Method for forming a metal cap in a semiconductor memory device
KR102318393B1 (en) * 2015-03-27 2021-10-28 삼성전자주식회사 Semiconductor devices including field effect transistors

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1347688A (en) * 1970-05-22 1974-02-27 Marconi Co Ltd Semiconductor memory arrays
US4818717A (en) * 1986-06-27 1989-04-04 Energy Conversion Devices, Inc. Method for making electronic matrix arrays
WO1996041381A1 (en) * 1995-06-07 1996-12-19 Micron Technology, Inc. A stack/trench diode for use with a multi-state material in a non-volatile memory cell
US5874760A (en) * 1997-01-22 1999-02-23 International Business Machines Corporation 4F-square memory cell having vertical floating-gate transistors with self-aligned shallow trench isolation
US6339544B1 (en) * 2000-09-29 2002-01-15 Intel Corporation Method to enhance performance of thermal resistor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8828788B2 (en) 2010-05-11 2014-09-09 Micron Technology, Inc. Forming electrodes for chalcogenide containing devices
US11107985B2 (en) 2015-03-27 2021-08-31 Intel Corporation Materials and components in phase change memory devices

Also Published As

Publication number Publication date
KR20040030723A (en) 2004-04-09
WO2003073511A1 (en) 2003-09-04
CN1533606A (en) 2004-09-29
AU2002248493A1 (en) 2003-09-09

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