DE102023203095A1 - Method for specifying a target distribution of an illumination intensity over a field height of a field of a projection exposure system - Google Patents

Abstract

To specify a target distribution of an illumination intensity over a field height of a field of a projection exposure system, which can be specified using an illumination optics, an illumination parameter of a light source of the projection exposure system is detected in a detection step (46). At least some correction elements (25) of the correction device are determined in a determination step (48) as a function of the detected location dependency in order to achieve the specified target distribution. In a transfer step (49), the correction elements (25) are transferred to the respectively determined displacement position, resulting in the specified target distribution. The result is a specification of the target distribution of the illumination intensity over the field height that is more stable than in the prior art.

Description

The invention relates to a method for specifying a target distribution of an illumination intensity over a field height of a field of a projection exposure system. Furthermore, the invention relates to an illumination system with such an illumination optics, an optical system with such an illumination optics and a projection exposure system with such an optical system. Furthermore, the invention relates to a method for producing a microstructured or nanostructured component with such a projection exposure system and a microstructured or nanostructured component produced with such a method.

A specification method of the type mentioned is known from WO 2016/128 253 A1 . Illumination optics, which are in any case in principle suitable for such a specification method, are in the WO 2016/128 253 A1 referenced.

It is an object of the present invention to develop a specification method of the type mentioned at the outset in such a way that, compared to the prior art, the specified distribution of the illumination intensity over the field height is more stable or more homogeneous.

According to the invention, this object is achieved by a specification method having the features specified in claim 1 .

According to the invention it was recognized that it is possible to use the default method from the WO 2016/128 253 A1 to be combined with the result of detecting a location dependency of a light source illumination parameter. Correction field facets and correction pupil facets assigned to them via illumination channels can be used as a correction device for influencing the field height dependency of the actual illumination intensity via the field height, in accordance with a correction device that is described in WO 2016/128253 A1 . Alternatively, a uniformity correction module can be used as the correction device, of which detailed examples are described in FIG U.S. 7,362,413 B2 . Other such uniformity correction modules are described in DE 10 2008 001 553 A1 and the US 9,310,692 B2 . It is then possible to react in particular to drifts in the light source during operation of the projection exposure system. This is of particular advantage if an EUV light source is used as the light source of the projection exposure system, in particular if a plasma light source is used.

The target displacement positions of the correction elements, which are determined in the determination step of the specification method, can be tilted positions and/or translation positions of the correction elements.

The illumination parameter of the light source, whose location dependency is recorded in the specification method, can be a scalar value. The spatial dependency of the illumination parameter can be a field height dependency, ie a dependency of the illumination parameter on a field coordinate perpendicular to an object displacement direction. It can be, for example, a location dependency, in particular a field height dependency, of a light source intensity and/or a location dependency, in particular a field height dependency, of an illumination of facets of the illumination optics, in particular an illumination of the field facets of the illumination optics.

The detection of the location dependency of the illumination parameters and/or the detection of the field height dependency of a respective arrangement of correction elements of the correction device, in particular a field height dependency of the illumination of correction pupil facets, can be carried out with a given repetition rate and with a given field height spatial resolution be performed.

The detection steps can take place through measurement and/or through simulation.

Correction elements in the form of correction field facets and correction pupil facets according to claim 2 have proven themselves. Basically, such correction elements are already in the WO 2016/128253 A1 described. The correction field facets and the correction pupil facets assigned via the corresponding illumination channels are operated according to claim 2 with correction field facet displacement positions that depend on the detected spatial dependency of the light source illumination parameter.

A dose measurement according to claim 3 for detecting the spatial dependency of the light source illumination parameter and/or for detecting the field height dependency of the correction field facet displacement positions has proven itself in practice. Sensor devices are known in the prior art for carrying out such a dose measurement.

The specification of a target illumination angle distribution over the object field according to claim 4 has proven itself in practice, since experience has shown that the displacement positions of the correction field facets determined by this target illumination angle ver depend on division. The target illumination angle distribution is in particular a target pupil setting, i.e. a target illumination intensity distribution over an illumination pupil of the illumination optics, e.g. the specification of pupil facets to be illuminated with illumination light and/or the specification of corresponding illumination intensities with which the respective pupil facets are to be acted upon so that the target illumination intensity distribution over the illumination pupil is achieved.

A determination strategy according to claim 5 has proven itself in practice. The specified target slope is an example of a target correction to be specified. The specified target slope can be the slope of a linear deviation over the field height between the target distribution and an actual distribution of the dependency of the illumination intensity. The gradient of a field height dependency of a deviation of the actual illumination intensity from a target value is therefore considered. In the case of a specified target slope, this is a linear correction. Corrections of a higher order, for example a parabolic correction, are also possible.

In a detection strategy according to claim 6, separate illumination intensity contributions are detected, which can then be combined with one another in the manner of linear combinations to achieve a desired field height dependency.

A simulation according to claim 7 can be combined with a detection of contributions from the illumination channel to the illumination intensity by measurement or can also be carried out completely independently, ie without a measurement contribution. The basis for such a simulation can be the optical design of the illumination optics and the light source.

The advantages of illumination optics according to claim 8 or 9, an illumination system according to claim 10, an optical system according to claim 11, a projection exposure system according to claim 12, a manufacturing method according to claim 13 and a micro- or nanostructured component according to claim 14 correspond to those mentioned above have already been explained with reference to the specification method according to the invention.

The component can be manufactured with an extremely high structural resolution. In this way, for example, a semiconductor chip can be produced with an extremely high integration or storage density.

• 1 schematisch einen Meridionalschnitt durch eine Projektionsbelichtungsanlage für die EUV-Projektionslithografie;
• 2 schematisch eine Aufsicht auf ein Fernfeld der Quelloptik - eine Beleuchtungs-Intensität -im Bereich einer Anordnungsebene eines Feldfacettenspiegels einer Beleuchtungsoptik der Projektionsbelichtungsanlage, wobei beispielhaft drei Feldfacetten des Feldfacettenspiegels hervorgehoben sind;
• 3 einen Verlauf der Beleuchtungs-Intensität über eine Feldhöhen-Koordinate für die drei in der 2 hervorgehobenen Feldfacetten,
• 4 schematisch einen Beleuchtungslicht-Strahlengang zwischen einem Plasma-Quellvolumen einer Plasma-Lichtquelle der Projektionsbelichtungsanlage und dem Feldfacettenspiegel unter Einsatz einer im Vergleich zur 1 abgewandelten Ausführung eines Kollektors für das Beleuchtungslicht;
• 5 in einer zu 2 ähnlichen Darstellung einen Verlauf der Beleuchtungs-Intensität bei einer im Vergleich zum Verlauf nach 2 dezentrierten Anordnung eines Plasma-Quellvolumens der Lichtquelle,
• 6 in einer zu 3 ähnlichen Darstellung die Beleuchtungs-Intensitätsverläufe auf den drei auch in der 5 hervorgehobenen Feldfacetten bei der Dezentrierung des Plasma-Quellvolumens nach 5;
• 7 eine Pupillenfacette eines Pupillenfacettenspiegels der Beleuchtungsoptik, wobei (1) mit starkem Linienverlauf durchgezogen ein Grundverlauf einer Point-Spread-Funktion (Punktausbreitungsfunktion, point spread function, PSF) einer dieser Pupillenfacette über einen Ausleuchtungskanal zugehörigen Feldfacette des Feldfacettenspiegels, (2) schwächer durchgezogen in Form von Höhenlinien ein Intensitätsprofil eines gesamten Plasmabildes des Plasma-Quellvolumens und (3) gestrichelt, wiederum in Form von Höhenlinien ein Intensitätsprofil eines Plasmabildes eines einzigen, in der 7 durch einen Punkt veranschaulichten Feldpunktes eingezeichnet ist;
• 8 eine Beleuchtungs-Intensitätsabhängigkeit einer Ausleuchtungs-Kanalintensität einer Beleuchtungslicht-Beaufschlagung eines Objektfeldes der Projektionsbelichtungsanlage von einer Feldhöhen-Dimension x, wobei die Beleuchtungs-Intensität für genau einen Ausleuchtungskanal, also für genau ein Beleuchtungslicht-Teilbündel, scanintegriert aufgetragen ist;
• 9 bis 12 in zur 8 jeweils ähnlicher Darstellung Effekte von Verlagerungen des Beleuchtungslicht-Teilbündels auf der Pupillenfacette in -x, +x, +y und -y-Richtung des Koordinatensystems nach 7 auf eine Feldhöhenabhängigkeit der Kanalintensität;
• 13 verschiedene beispielhafte Korrekturen erster Ordnung eines Beleuchtungs-Intensitätsverlaufs mit entsprechenden Steigungswerten über die Feldhöhe im Objektfeld, eingestellt über individuelle Dezentrierungen bzw. Verlagerungen von Beleuchtungslicht-Teilbündeln auf ausgewählten Korrektur-Pupillenfacetten nach Art der Pupillenfacette nach 7, also verschiedene Beispielwerte für eine Korrektur erster, linearer Ordnung;
• 14 in einer zu 13 ähnlichen Darstellung entsprechende Korrekturwerte zweiter Ordnung, also beispielhafte parabolische Korrekturverläufe;
• 15 in einer zu 4 ähnlichen Darstellung Abstrahlcharakteristiken eines Beleuchtungslicht-Strahlengangs zwischen dem Plasma-Quellvolumen und dem Feldfacettenspiegel, wobei zusätzlich zwei Sensoren zur Messung der Plasmaposition dargestellt sind;
• 16 in einer zu den 4 und 15 ähnlichen Darstellung den Beleuchtungslicht-Strahlengang zwischen dem Plasma-Quellvolumen und dem Feldfacettenspiegel für zwei verschiedene Plasma-Quellvolumen-Positionen, die sich in der Feldhöhen-Koordinate voneinander unterscheiden, wobei die hierdurch verursachten Auswirkungen auf den Beleuchtungs-Strahlengang hervorgehoben sind, die über eine schematisch dargestellte Sensoreinrichtung erfassbar sind; und
• 17 ein Ablaufschema von Teilschritten eines Verfahrens zum Vorgeben einer Soll-Verteilung der Beleuchtungs-Intensität über die Feldhöhe des Objektfeldes der Projektionsbelichtungsanlage.

Exemplary embodiments of the invention are explained in more detail below with reference to the drawing. Show it:

• 1 schematically a meridional section through a projection exposure system for EUV projection lithography;
• 2 a schematic view of a far field of the source optics—an illumination intensity—in the region of an arrangement plane of a field facet mirror of an illumination optics of the projection exposure system, with three field facets of the field facet mirror being highlighted as an example;
• 3 a course of the illumination intensity over a field height coordinate for the three in FIG 2 highlighted field facets,
• 4 schematically an illumination light beam path between a plasma source volume of a plasma light source of the projection exposure system and the field facet mirror using a compared to 1 modified version of a collector for the illumination light;
• 5 in one to 2 Similar representation shows a course of the illumination intensity in a comparison to the course 2 decentered arrangement of a plasma source volume of the light source,
• 6 in one to 3 similar representation, the lighting intensity curves on the three also in the 5 highlighted field facets when decentering the plasma source volume 5 ;
• 7 a pupil facet of a pupil facet mirror of the illumination optics, where (1) a basic course of a point spread function (point spread function, point spread function, PSF) of a field facet of the field facet mirror associated with this pupil facet via an illumination channel with a strong solid line, (2) weaker solid in form of contour lines, an intensity profile of an entire plasma image of the plasma source volume and (3) dashed, again in the form of contour lines, an intensity profile of a plasma image of a single, in which 7 is drawn by a dot illustrated field point;
• 8th an illumination intensity dependency of an illumination channel intensity of an illumination light impinging on an object field of the projection exposure system of a field height dimension x, the illumination intensity for exactly one illumination channel, ie for exactly one illumination direction light beam, is applied scan-integrated;
• 9 until 12 in to 8th each similar representation effects of displacements of the illumination light beam on the pupil facet in -x, +x, +y and -y direction of the coordinate system after 7 on a field height dependence of the channel intensity;
• 13 various exemplary corrections of the first order of an illumination intensity profile with corresponding slope values over the field height in the object field, adjusted via individual decentrations or displacements of partial illumination light beams on selected correction pupil facets in the manner of the pupil facet 7 , i.e. different example values for a correction of the first, linear order;
• 14 in one to 13 second-order correction values corresponding to a similar representation, ie exemplary parabolic correction curves;
• 15 in one to 4 Similar representation of radiation characteristics of an illuminating light beam path between the plasma source volume and the field facet mirror, with two sensors for measuring the plasma position being additionally represented;
• 16 in one to the 4 and 15 Similar representation of the illumination light beam path between the plasma source volume and the field facet mirror for two different plasma source volume positions, which differ from each other in the field height coordinates, with the effects caused thereby on the illumination beam path being highlighted, which have a schematic sensor device shown can be detected; and
• 17 a flowchart of partial steps of a method for specifying a target distribution of the illumination intensity over the field height of the object field of the projection exposure system.

1 shows a projection exposure system 1 for microlithography schematically in a meridional section. The projection exposure system 1 includes a light or radiation source 2. An illumination system 3 of the projection exposure system 1 has illumination optics 4 for exposure of an illumination field that coincides with an object field 5 in an object plane 6. The illumination field can also be larger than the object field 5 an object in the form of a reticle 7 arranged in the object field 5 and held by an object or reticle holder 8 . The reticle 7 is also referred to as a lithography mask. The object holder 8 can be displaced along an object displacement direction via an object displacement drive 9 . Projection optics 10 are used to image the object field 5 in an image field 11 in an image plane 12. A structure on the reticle 7 is imaged on a light-sensitive layer of a wafer 13 arranged in the area of the image field 11 in the image plane 12. The wafer 13 is Wafer holder 14 held. The wafer holder 14 can be displaced parallel to the object displacement direction via a wafer displacement drive 15 synchronized with the object holder 8 .

The radiation source 2 is an EUV radiation source with an emitted useful radiation in the range between 5 nm and 30 nm. It can be a plasma source, for example a GDPP source (plasma generation by gas discharge, gas-discharge-produced plasma) or be an LPP (laser-produced plasma) source. A radiation source based on a synchrotron or on a free electron laser (FEL) can also be used for the radiation source 2 . The person skilled in the art can find information on such a radiation source, for example, in U.S. 6,859,515 B2 . EUV radiation 16 emanating from the radiation source 2 , in particular the useful illuminating light illuminating the object field 5 , is bundled by a collector 17 . A corresponding collector is from the EP 1 225 481 A known. After the collector 17, the EUV radiation 16 propagates through an intermediate focal plane 18 before it strikes a field facet mirror 19. The field facet mirror 19 is a first facet mirror of the illumination optics 4. The field facet mirror 19 has a plurality of reflective field facets in the 1 are not shown. The field facet mirror 19 is arranged in a field plane of the illumination optics 4, from which imaging into the object plane 6 takes place.

The EUV radiation 16 is also referred to below as illumination light or imaging light.

After the field facet mirror 19 , the EUV radiation 16 is reflected by a pupil facet mirror 20 . The pupil facet mirror 20 is a second facet mirror of the illumination optics 4 . The pupil facet mirror 20 is arranged in a pupil plane of the illumination optics 4 . The pupil facet mirror 20 has a plurality of reflective pupil facets in the 1 are not shown. With the help of the pupil facets of the pupil facet mirror 20 and a subsequent imaging optical assembly in the form of transmission optics 21 with mirrors 22, 23 designated in the order of the beam path and 24 the field facets of the field facet mirror 19 are imaged in the object field 5 superimposed on one another. The last mirror 24 of the relay optics 21 is a grazing incidence mirror.

To facilitate the description of positional relationships, 1 a Cartesian xyz coordinate system is drawn in as a global coordinate system for describing the positional relationships of components of the projection exposure system 1 between the object plane 6 and the image plane 12 . The x-axis runs in the 1 perpendicular to the drawing plane into this. The y-axis runs in the 1 to the right and parallel to the displacement direction of the object holder 8 and the wafer holder 14. The z-axis runs in the 1 down, i.e. perpendicular to the object plane 6 and to the image plane 12.

The x dimension over the object field 5 or the image field 11 is also referred to as the field height. The object displacement direction is parallel to the y-axis.

Local Cartesian xyz coordinate systems are shown in the other figures. The x-axes of the local coordinate systems follow parallel to the x-axis of the global coordinate system 1 . The xy planes of the local coordinate systems represent arrangement planes of the respective components shown in the figure. The y and z axes of the local coordinate systems are correspondingly tilted by a specific angle about the respective x axis.

Examples of different facet arrangements for the field facet mirror 19 and the pupil facet mirror 20 are known from FIG WO 2016/128 253 A1 , the WO 2009/100 856 A1 , the US 6,438,199 B1 and the U.S. 6,658,084 B2 .

The field facet mirror 19 has a multiplicity of curved field facets 25. These are arranged in groups in field facet blocks on a field facet carrier. Overall, the field facet mirror 19 has a plurality of field facet blocks, to which three, five or ten of the field facets 25 are combined in groups.

Alternatively, the field facet mirror 19 can also have rectangular field facets 25, which in turn are arranged in groups in field facet blocks.

Pupil facets 29 of the pupil facet mirror 20 are arranged in the area of an illumination pupil of the illumination optics 4 . The pupil facets 29 are arranged on a pupil facet carrier of the pupil facet mirror 20 . A distribution of pupil facets 29 exposed to illumination light 16 via field facets 25 within the illumination pupil specifies an actual illumination angle distribution in object field 5 .

Each of the field facets 25 is used to transfer part of the illumination light 16, i.e. a partial illumination light bundle 16 _i , from the light source 2 to one of the pupil facets 29.

The field facets 25 are first facets of the illumination optics 4 in the beam path of the illumination light 16. Accordingly, the pupil facets 29 are second facets of the illumination optics 4 in the beam path of the illumination light 16.

In the following, a description of illuminating light partial beams 16; it is assumed that the associated field facet 25 is illuminated to a maximum, ie over its entire reflection surface. In this case, an edge contour of the illumination light partial beam 16 _i coincides with an edge contour of the illumination channel, which is why the illumination channels are also referred to as 16 _i below. The respective illumination channel 16 _i represents a possible light path of an illumination light partial bundle 16; about the other components of the illumination optics 4.

For each of the illumination channels 16 _{i ,} the transmission optics 21 have one of the pupil facets 29 for transferring the partial illumination light bundle 16; from the respective field facet 25 towards the object field 5.

One illuminating light sub-beam 16 _i each, of which in FIG 1 schematically two illuminating light sub-beams 16; (i=1, . . . , N; N: number of field facets) is guided between the light source 2 and the object field 5 via precisely one of the field facets 25 and via precisely one of the pupil facets 29 via one illumination channel each.

2 shows a far-field illumination intensity distribution, illustrated via isolines I _{i of} the same intensity, in an arrangement plane of the field facet mirror 19. From the field facet mirror 19 are in FIG 2 three field facets 25 _A , 25 _B and 25 _C are shown by way of example. In the field facet mirror arrangement plane after 2 the far field is also shadowed in the area of a center Z.

The isolines I _i run rotationally symmetrically around the center Z, ideally on concentric circular lines.

At the far field after 2 the highest illumination intensity is near the center shading Z (isoline I ₁ ). As the distance from the center Z increases, the illumination intensity decreases continuously up to an intensity value I ₈ lying radially on the outside. The illumination intensities used by applying the field facets 25 _i can differ by more than 50% and can differ, for example, by a factor of 2, by a factor of 3, by a factor of 4, by a factor of 5 or by an even larger factor .

3 shows the respective scan-integrated illumination intensity contribution A, B, C of the three in FIG 2 excellent field facets 25 _A , 25 _B , 25 _C over the field height x of the object field 5.

The intensity contribution A of the field facet 25 _A is approximately mirror-symmetrical with respect to a central x-coordinate of the field facet 25 _A , which leads to a corresponding contribution over the object field 5 that is mirror-symmetrical with respect to the field height x. This intensity contribution A is greatest in the middle of the field height of the object field 5 and decreases continuously towards the two edges.

The field facet 25 _B is in the 2 from left to right increasingly intensively applied to the illumination light 16, resulting in a correspondingly with increasing field height x increasing intensity contribution B in the 3 leads. Exactly the opposite is true for the field facet 25 _C with an intensity contribution C that decreases with increasing field height x.

A sum of the three intensity contributions A, B and C is in the 3 shown dashed at S. This sum is constant over the field height x of the object field 5, i.e. it has a predetermined field height gradient of 0. This is a variant of a target distribution S(x) to be specified of the illumination intensity I, which can be specified via the illumination optics 4, over the field height x.

4 shows a variant of an illumination light beam path between the light source 2 designed as a plasma source and the field facet mirror 19. Components and functions that correspond to those described above with reference to FIG 1 until 3 and in particular with reference to the 1 have already been explained bear the same reference numbers and will not be discussed again in detail. Is drawn in the 4 also a far-field plane 30, over which the illumination intensity, for example, in the 2 is measured.

In the case of the beam path variant 4 is replaced by the collector 17 after 1 an ellipsoid-shaped collector 17 is used, with a source volume of the light source 2 being arranged in a first focal point of the ellipsoid and the intermediate focus IF in a second focal point of the ellipse.

4 shows a relative arrangement between the source volume of the light source 2 and the collector 17, in which the source volume by an offset Δx along a coordinate that corresponds to the field height coordinate, compared to the centered variant of the illumination intensity distribution according to 2 and 3 offset.

This displacement .DELTA.x of the source volume of the light source 2 after 4 leads to a corresponding x-offset of the illumination intensity distribution in the far field, as in FIG 5 shown. The imaging behavior of the collector 17 also contributes to this far-field offset.

The offset Δx after 4 leads to differences in the field height dependencies of the intensity contributions A, B, C of the field facets 25 _A , 25 _B and 25 _C , as in FIG 6A shown. The sum S of the three resulting intensity contributions A, B, C is no longer scan-integrated over the field height x of the object field 5, but has im in der 6A case shown has a positive slope.

In particular, the intensity contribution A is in the situation according to the 5 and 6 no longer mirror-symmetrical about a central x-field coordinate and the gradients of the two intensity contributions B C are no longer the same, as far as the absolute value is concerned, as in the offset-free situation according to FIGS 2 and 3 , but different.

When going S to 6A it can be a target curve of the superimposed intensity contributions A to C or a measured actual curve, which is also denoted by I below.

6B shows an example of a target profile S(x) of the lighting intensity I to be set over the field height x. S(x) is in the 6B shown solid. The 6B also shows an actual actual distribution I(x) of the illumination intensity I over the field height x, which is shown in FIG 6B is shown in dashed lines. A difference ΔS(x) between the target distribution S(x) and the actual distribution I(x) is in FIG 6B illustrated at ΔS(x). In a first approximation, this target/actual difference ΔS(x) has a linear course.

A target distribution of the difference ΔS(x) between the target and actual value of the distribution of the illumination intensity over the field height x can be specified with the aid of the specification method explained below. Alternatively, the target distribution S(x) can also be specified.

6C shows the relationship between the target/actual difference ΔS(x) and a relative correction contribution K(x), which must be set via a correction device with correction elements, described below, for influencing the field height dependence of the illumination intensity I via the field height , so that the target-actual difference ΔS(x) becomes zero over the entire field height x and the illumination intensity I reaches the target curve S(x). The slope of the correction contribution K(x) is the negative slope of the target/actual difference ΔS(x).

At least some of the pupil facets 29, in the exemplary embodiment considered all pupil facets 29 of the pupil facet mirror 20, can be used as correction pupil facets and thus as correction elements of the correction device. These correction pupil facets are arranged in the beam path of the partial illumination light bundle 16 _i impinging on them such that an image 2 ′ of the light source 2 is created at an image location which is spaced apart from the pupil facet 29 along the illumination channel 16 _i . A distance between the respective image 2 'and the associated pupil facet is in the 1 marked with a. This distance a is also referred to below as the defocus distance.

In the 1 two variants of such an arrangement of the light source images 2' are shown schematically. A first light source image 2' ₁ is arranged at an image location which is in the beam path of the associated illuminating light partial bundle 16; before reflection at the pupil facet 29 of the pupil facet mirror 20 is located. The distance between the light source image 2 ' ₁ and the associated pupil facet 29 is in the 1 denoted by a ₁ . A second light source image 2 ′ ₂ is arranged in the beam path of a further partial illumination light bundle 16 _i at an image location after reflection on the pupil facet of the pupil facet mirror 20 . The distance between the light source image 2 ' ₂ and the associated pupil facet 29 is in the 1 denoted by a ₂ .

If there is no perfect imaging of the intermediate focus IF onto the pupil facets 29, there are regularly finite distances a _i between the light source images 2' _i and the associated pupil facet 29.

In the 1 B _IF is also a typical size, namely the typical diameter, of a light source image IF, ie an intermediate focus, in the intermediate focus plane 18. With B _if is in the 1 denotes a typical size of an image of the intermediate focus IF on the respective pupil facet 29 . With B _f is in the 2 additionally denotes an x-extension of the respective field facet 25, ie a typical size of the field facet 25.

At least some of the field facets 25, all field facets 25 in the exemplary embodiment shown, can be used as correction field facets, in turn as correction elements of the correction device, which are each assigned _to a respective correction pupil facet 29 via one of the illumination channels 16 i. The correction field facets 25 are connected to correction or displacement actuators in the form of tilting actuators. The displacement actuators are designed for the continuous displacement, namely for the continuous tilting, of the correction field facets 25 . The displacement actuators are designed to tilt the correction field facets 25 about two mutually perpendicular axes which run parallel to the x-axis and the y-axis, for example through a respective center or through a focal point of a reflection surface of the correction field facet 25.

The displacement actuators are in signal connection with a correction control device 32 of the projection exposure system 1 via a signal connection (not shown) (cf. 1 ). The correction control device 32 serves for the controlled tilting of the correction field facets 25.

The correction control device 32 and the displacement actuators are designed such that a correction displacement path, namely a correction tilt angle of the correction field facets 25 in a correction displacement range, namely in a correction tilt angle range, is so large that a respective correction - Illumination channel 16 _i is cut by an edge of the associated correction pupil facet 29 in such a way that the partial illumination light bundle 16 _i is not completely transferred from the correction pupil facet 29 into the object field 5. For this is also on the WO 2016/128 253 A1 referred.

7 shows one of the pupil facets 29, which can be used in the pupil facet mirror 20. The pupil facet 29 after 7 has an almost square edge contour with rounded corners. Such an edge contour, which can also be designed without rounded corners, that is to say square or rectangular, makes it possible to cover the pupil facet carrier relatively densely with the pupil facets 29 .

The pupil facet 29 after 7 is acted upon by an arcuate field facet 25 of the field facet mirror 19 in the manner of the field facets 25 _A , 25 _B , 25 _C with an illuminating light partial beam 16 _i . A total out is again shown with solid intensity isolines I _j illumination via the illumination channel 16 _i , which results from a convolution of the associated light source image 2 ′ of this illumination channel 16 _i with a point spread function (PSF) of the field facet 25 , the arcuate profile of which corresponds to the arcuate profile of the field facet 25 . Is shown in the 7 also an exemplary light source image 2' by dashed intensity contour lines of the illumination light intensity.

The convolution of the approximately circular light source image 2' with the arcuate point spread function PSF of the field facet 25 results in the 7 total illumination of the pupil facet 29 represented by solid intensity contour lines I _j , whose illumination dimension, like that 7 illustrated, is larger than the pupil facet 29. In the area of higher intensities (intensity isolines I ₁ , I ₂ ), an overall arched, bean-shaped or kidney-shaped form of this overall illumination, i.e. a corresponding form of the illuminating light partial bundle 16 _i , can be seen.

The folding occurs due to the fact that, as already explained above, the image 2' of the light source 2 is created at an image location that is along the illumination channel 16 _{i at} a distance from the pupil facet 29, i.e. either before or after the pupil facet 29 in the beam path.

The arcuate edge contour of the illuminating light sub-beam 16 _i on the pupil facet 29 represents a light spot of the illuminating light sub-beam 16; represent.

The illuminating light partial bundle 16 _i is composed of a large number of superpositioned light source images 2 ′, ie from a large number of sub bundles of the entire illuminating light partial bundle 16 _i , each of which emanates from other field facet points or field facet sections.

A radius (half the diameter) of the light source image 2 ′ on the pupil facet 29 that can be used for the illumination is denoted by r. x _f designates a usable x-extension of the illuminating light partial bundle 16; in the area of the pupil facets 29 of the pupil facet mirror 20. x _f is in the example according to 7 slightly larger than an x-extent x ₂₉ of the pupil facet 29.

By correcting tilting of the field facet 25, which the pupil facet 29 after 7 applied, a field-dependent correction of an illumination angle distribution over the object field 5 can be achieved.

k charakterisiert hierbei das Verhältnis zwischen den Größen x_f und r, also zwischen der typischen Erstreckung x_f und dem Radius r des Lichtquellen-Bildes 2'.In order for such a field-dependent correction to be possible, the following condition must be met for the defocus distance a: $$\text{a}={\text{k B}}_{\text{if}}{\text{f}}_{\text{f}}/{\text{B}}_{\text{f}}$$

k characterizes the relationship between the variables x _f and r, ie between the typical extension x _f and the radius r of the light source image 2'.

B _if is the typical size of the image of the intermediate focus IF on the respective pupil facet 29. The following applies: 2r=B _if . f _f is the focal length of the associated field facet 25, ie the focal length with which the respective illuminating light partial bundle 16; is imaged by the associated field facet 25. B _f is the typical extent of the field facet 25.

In order for the field-dependent correction to be possible, the following must also apply: $$\text{k}\ge 0.5$$

In particular, it can be the case that k≧1, so that the usable field height extension x _f of the illuminating light partial bundle 16 _i has a typical size that is larger than the radius r of the light source image 2′. The field dependence of the correction described above is the better, the larger k is. k can be greater than 1.5, can be greater than 2, can be greater than 3, can be greater than 4, can be greater than 5 or even greater.

As soon as the typical diameter of the light source image 2' is much larger than the typical dimension _xf of the field portion, there is no usable field dependency by means of a correction tilting of the field facet 25, which the pupil facet 29 after 7 applied. The only result then is a field-independent reduction in intensity of the partial bundle of illuminating light 16 _i .

The larger Bif becomes, the larger the defocus distance a must be so that the field dependency required for the correction is maintained when the field facet 25 is tilted for correction.

8th shows an illumination intensity I over the field height x of the object field 5, which over the illumination channel 16 _i according to FIG 7 illuminated pupil facet 29 is generated. An x-coordinate of the in the 7 The highlighted point on the point spread function PSF, which at the same time represents the center of the light source image 2', is in FIG 8th at x ₁ also highlighted. At this highlighted field height x ₁ , there is a reduced intensity I ₁ compared to the maximum illumination intensity that is achieved via this illumination channel 16 _i , since a larger Portion of the light source image 2 'from in the 7 is cut off at the left edge of the pupil facet 29 and thus does not contribute to the illumination of the object field 5.

9 until 12 show different dependencies of a scan-integrated intensity I _K , which one of the illumination channels 16 _i , for example via the pupil facet 29 7 is performed, contributes to the illumination of the object field 5, from the field height x. A scan integration means an integration of the illumination intensity along the y-coordinate of the object field 5.

Dashed is in the 9 until 12 a nominal intensity profile is drawn in, which results when an optimally large part of the entire partial illuminating light beam 16; is reflected from the pupil facet 29 towards the object field 5 . This corresponds to that in the 7 and 8th depicted situation.

Are shown in solid lines in the 9 until 12 Courses of the intensity I _K , which change due to a displacement of the partial illumination light bundle 16; relative to the pupil facet 29 7 in negative x-direction ( 9 ), in positive x-direction ( 10 ), in positive y-direction 11 ) and in negative y-direction ( 12 ) result. Depending on the design of the imaging effects of the illumination optics 4, the displacement sign of the 9 until 12 can also be different and in particular can also be channel-dependent.

und somit entsprechender Korrekturbeiträge beziehungsweise entsprechender Soll-Intensitätsverläufe der gesamten Beleuchtungs-Intensität I über die Feldhöhe x des Objektfeldes 5 herangezogen werden.The resulting correction intensity curves I _K1 ( 9 ), I _K2 ( 10 ), I _K3 ( 11 ) and I _K4 ( 12 ) can be used to provide corresponding linear combinations $\text{I}\left(\text{x}\right)={\displaystyle {\sum }_{i=1}^N{I}_{K_i}\left(x\right)}$

and thus corresponding correction contributions or corresponding target intensity curves of the total illumination intensity I over the field height x of the object field 5 are used.

In this case, N is the number of correction pupil facets 29, that is to say the number of intensity curves that are influenced in a targeted manner for correcting the entire field height dependence of the illumination intensity. In addition, a weighting coefficient can be taken into account, which can be understood, for example, as far-field intensity at the respective facet. The weighting coefficient can in turn depend on the field height x.

With the help of corresponding linear combinations of the intensity curves I _Ki , not only can a constant illumination intensity be achieved over the field height x, but a predetermined target gradient or a predetermined target course of the illumination intensity over the field height x can also be predetermined.

In this regard, reference is also made to the description of WO 2016/128 253 A1 .

13 shows as a result of combinations of single-channel intensity curves ( 9-12 ) a selection of corresponding, solid, linear correction values based on several gradually deviating, dashed, negative and positive target gradients _mi , i.e. first-order linear correction values for the dependency of the illumination intensity I over the field height x.

14 shows correspondingly gradually deviating parabolic correction values m _j , ie corrections of the dependence of the illumination intensity on the field height of the second order.

15 shows an example of a sensor device 35 for detecting a field height dependency of an illumination parameter of the light source 2 of the projection exposure system 1 15 two different intensity/direction emission characteristics A ₁ and A ₂ of the illumination light 16 emanating from a source volume 2v of the light source 2.

The sensor device 35 has two sensors 36, 37, which are arranged opposite one another in the region of an edge 17 _R of a used reflection surface of the collector 17 and measure intensity components of the illumination light 16, which are radiated from the source volume 2v directly in the direction of the respective sensor 36, 37. With the sensors 36, 37, a deviation of an actual emission characteristic of the illumination intensity from a target emission characteristic, ie a nominal emission characteristic, can be detected.

A comparison of a measurement result of the sensors 36, 37 on the one hand with one another and on the other hand with a threshold value can be used, for example, to decide which of the 15 radiation characteristics A ₁ , A ₂ shown by way of example and also whether there is an undesirably asymmetrical radiation characteristic in relation to a central axis oA, since in this case the two sensors 36 , 37 would measure different intensity values.

The two sensors 36, 37 are arranged at a distance from one another along an x-coordinate, which is converted via the beam path of the illumination light 16 into the field height coordinate x.

In addition, the sensor device 35 can have two further sensors, which correspond to the sensors 36, 37 and in front of or behind the plane of the drawing 15 turn edge to used reflection surface of the collector 17 in positive and negative y-direction are spaced apart. In this way, the radiation can also be on the y-coordinate perpendicular to the plane of the 15 monitor by means of the sensor device 35.

16 FIG. 1 illustrates a variant of a sensor device 40 for monitoring a displacement of a source volume 2v of the plasma light source 2. FIG 16 on the one hand a beam path of the illumination light 16 with a source volume 2 _V optimally arranged on the central axis oA and in the focal point of the ellipsoid collector 17 and, corresponding to the illustration in FIG 4 , a source volume 2 _V' decentered along the x-direction. A beam path of the illumination light 16' resulting from this decentered source volume 2 _V' is shown in FIG 16 indicated by dashed lines.

The sensor device 40 detects a resulting displacement Δx _IF of the intermediate focus IF in the x-direction, from which the decentering Δx of the source volume 2v can be inferred.

Part of the sensor device 20 can be a camera which is aimed at the source volume 2v or _2V′ . Such a camera can be used to determine a position of the plasma 2v or 2V _', particularly in the x and y coordinates.

Alternatively or additionally, the sensor device 40 can have a camera which is aimed at the intermediate focus IF, so that displacements Δx _IF , Δy _IF of the intermediate focus IF can be measured directly.

Again alternatively or additionally, the sensor device 40 can have dose sensors, which are arranged in a far field plane of a far field of the EUV collector and/or in the area of the collector 17 itself. Such dose sensors can be used to measure an indirect x/y displacement of the position of the swelling volume 2v or 2V _' via a relative change in the intensities or doses. In particular, the sensors can be arranged in different circumferential positions of edge regions of the far field and/or of the collector 17 .

Corresponding detection or sensor arrangements that can be used in the sensor device 40 are described in FIG DE 10 2017 221 746 A1 and in the DE 10 2018 212 073 A1 .

Such a sensory detection of a mobile source volume can be done, for example, using a sensor that is described in DE 10 2018 212 073 A1 .

As an alternative or in addition to a correction device described above having correction field facets and correction pupil facets as correction elements for influencing a field height dependency of an actual illumination intensity via the field height x, such a correction device can also have a device for influencing and detecting a field height dependency of the illumination intensity in the area of a field plane. Details that are known from the design of uniformity correction modules can be used to implement such an alternative or additional correction device. Examples of influencing and detecting a field height dependency of an illumination intensity are described in U.S. 7,362,413 B2 .

Such a field height sensor system can be installed via a sensor device 41 or 42 (cf. 1 ) which images the object field 5 or the image field 11 on a sensor that is location-dependently sensitive at least with respect to the field height coordinate x, for example a CCD or CMOS sensor.

Based on 17 a method for specifying a target distribution S(x) of an illumination intensity I over the field height x of the object field 5 is described below. This is done by specifying a target/actual difference ΔS(x) or a correction contribution K(x) with a negative gradient compared to ΔS(x) (cf. also the 6A until 6C ).

As part of the specification method, a target illumination angle distribution, i.e. an illumination setting, is initially specified via the object field 5 in a specification step 45. The specified illumination setting is a production setting of the illumination optics 4 of the projection exposure system 1.

The specified target illumination angle distribution corresponds to a target illumination intensity distribution over an illumination pupil of the illumination optics 4, i.e., for example, a specification of those pupil facets 29 of the pupil facet mirror 20 that are to be exposed to the illumination light 16 and, if necessary, a specification of illumination intensities on these pupil facets 29 to be exposed.

A light source parameter s is typically determined by determining the location dependence of a lighting parameter s of the light source. For example, the plasma image on a CCD sensor is a location-dependent light distribution. The calculation of the center of gravity then reduces the location-dependent distribution function to one (or a few) parameters. The light source parameter s can in particular be a scalar value.

The illumination parameter s of the light source 2 is recorded as part of the specification method for S(x). This is done, for example, by detecting the emission characteristic A _i via the sensors of the sensor device 35 and/or by detecting a decentering Δx _IF of the intermediate focus IF using the sensor device 40. This occurs in a detection step 46.

Parallel to the detection step 46, the illumination intensity distribution I(x) over the field height x is detected in a step 46a, which in turn can be done using a corresponding field height sensor system.

In a recording step 46b, the dependency between the illumination intensity distribution I(x) recorded in step 46a and the light source illumination parameter s recorded in each case is recorded. In recording step 46b, an association is thus made as to which illumination intensity distribution I(x) belongs, for example, to which plasma position detected in composition step 46. The detected plasma position is an example of the illumination parameter s.

Steps 46, 46a and 46b are repeated in a repeat loop 46c to ensure sufficient scanning range for the light source parameter and to achieve sufficient accuracy in recording 46b.

From the result of the recording step 46b, a target/actual difference ΔS(x) between the target value S(x) of the illumination intensity distribution to be specified and the actual distributions I(x) measured in the measuring steps 46a is determined in a determination step 46d. determined. The calculated target/actual difference ΔS(x) depends on the lighting setting originally specified.

In parallel, in particular shortly before or after these steps 46 and 46a to 46d, the correction device is calibrated to influence the field height dependency of the actual illumination intensity I(x). A time interval of this parallel calibration should not be greater than 1 hour, for example, and in particular not greater than 10 minutes.

For this purpose, a basic setting of +x/-x and +y/-y displacement or tilt positions of selected correction field facets of the field facets 25 takes place in a specification step 46e.

In a further measurement step 47, which can take place independently of the light source location dependency detection step 46, the field height dependency of an illumination of the correction pupil facets 29 of +x/-x and +y/-y displacement positions of the respective illumination channels 16 _i associated field facets 25 recorded as correction field facets. This is done by deliberately tilting the respective correction field facet 25 in the +x direction, in the -x direction, in the +y direction and in the -y direction, until field height dependencies, for example, according to 9 until 12 can be detected via a corresponding field height sensor. The sensors that are used in the measuring step 47 can be the same sensors that are used in the measuring or detection step 46a.

In a further recording step 47a, the resulting field height dependencies are recorded as a function of the respectively specified set of displacement or tilting positions of the correction field facets 25. These steps 46e, 47 and 47a are in turn repeated in a repetition loop 47b to achieve a sufficient value range of different profiles of the field height dependencies and to achieve sufficient accuracy.

In a subsequent determination step 47c, an assignment is made as to which sets of +x/−x and +y/−y displacement or tilt positions of the correction field facets 25 lead to a corresponding increase in a resulting illumination intensity over the field height x. This assignment in determination step 47c is in turn dependent on the predefined illumination setting, ie on the target illumination angle distribution.

The assignment of the respective sets of displacement positions to the respective gradients of the illumination intensities over the field height determined in step 47c are sorted for a predetermined range of gradients, so that in the entire gradient range, i.e. in a target parameter range for each gradient, a suitable set of displacement positions of the correction Field facets 25 is present, which leads to the corresponding increase in the illumination intensity over the field height. The result of the determination step 47c is sets of displacement or tilting positions of the correction field facets 25 for generating corresponding correction contributions K (x), with which measured target/actual deviations in lighting intensity are corrected.

Steps 45 and 46, 46a to 46d on the one hand and 46e and 47, 47a to 47c on the other hand have to be carried out either exactly once or at longer time intervals within the framework of the specification method, particularly in the case of a basic setting of the projection exposure system. This basic setting can be carried out, for example, when the projection exposure system is put into operation and then at intervals of a few months.

Steps 46e and 47 can also be carried out by simulation, provided the illumination optics are modeled accordingly.

Steps 46 and 46a to 46d serve to determine a sensitivity of a light source parameter, for example a plasma position, for the illumination intensity distribution over the field height, for example in the object field.

Steps 46e and 47, 47a to 47c serve to determine a sensitivity of a correction field facet displacement position, in turn for the illumination intensity distribution over the field height.

Depending on the spatial dependencies of the light source illumination parameters recorded in these preparation steps 45 to 47c on the one hand and the field height dependency of the illumination of the correction pupil facet 29 on the other hand, target displacement positions x ₀ and y ₀ of at least some of the correction field facets 25 are then used to reach the predetermined target distribution of the illumination intensity over the field height during operation of the projection exposure system 1 is determined. This takes place in a determination step 48.

In a first sub-step 48a of determination step 48, the current value of the illumination parameter s of the light source 2 is first recorded during operation of the projection exposure system, i.e. for example a current source position, a current emission characteristic or a current intermediate focus decentering of the light source 2, as explained above (measuring step 48a). The slope of ΔS(x), i.e. the target/actual difference of the illumination intensity distribution over the field height x, is determined from the measurement result together with the result of determination step 46d, which results in the light source illumination parameter currently measured in step 48a. This takes place in a gradient determination step 48b of determination step 48. From the gradient determined in step 48b, the gradient of the correction contribution K(x) is then determined by inversion, ie the negative gradient of the target/actual difference ΔS(x). This is done in a target gradient determination step 48c of determination step 48. For this determined target gradient, the set resulting in this gradient of the correction contribution K(x) is then calculated using the assignment of the displacement positions of the correction field facets determined in assignment step 47c to the gradient of the illumination intensity over the field height determined by displacement positions of the correction field facets 25 . In a transfer step 49, the correction field facets 25 are then transferred to their respective associated displacement positions x0, y0 determined in determination step 48, so that the specified target distribution S(x) of the illumination intensity I specified via the illumination optics 4 over the field height x des Object field 5 or alternatively the image field 11 results.

The displacement in the +/-x direction and in the +/-y direction takes place via a corresponding tilting of the field facets 25.

At the end of the transfer step 49, an actual illumination setting of the projection exposure system 1 results, which corresponds to the specified target illumination setting with regard to its illumination angle distribution and its illumination intensity distribution over the object field 5 or the image field 11.

Steps 45 to 49 of the specification method take place under the control of the control device 32, which in this respect serves as a correction control device.

When carrying out the specification method, target correction curves m _i , m _j of the target distribution of the illumination intensity over the field height or of the correction contribution K(x) can be used as an intermediate or end result, as described above in connection with 13 and 14 explained. In the determination method for the target displacement positions x ₀ , y ₀ , for example, a slope s' of the spatial dependence s(x) of the light source illumination parameter can be measured and the field height dependence on the target displacement positions of the correction field facets can be adjusted in such a way that there is exactly one compensating gradient m' _i = -s'.

The target displacement positions x ₀ , y ₀ of the respective correction field facets 25 depend on the value of the light source parameter, on the field height dependency of the illumination of the respective correction pupil facets 29 and, of course, on the target distribution of the illumination intensity over the field height to be specified in the object field 8.

The detection of the location dependency of the light source illumination parameter on the one hand and the detection of the field height dependency of the illumination of the correction pupil facets on the displacement positions of the correction field facets on the other hand can be carried out via a field height-dependent dose measurement of the illumination via the object field 5 and/or via the image field 11 . This can be done with the help of a uniformity correction module, for which details can be found, for example, in U.S. 7,362,413 B2 are known.

When detecting the field height dependency and/or when determining the displacement positions, illumination intensity contributions of different illumination channels 16 _i or different illumination channel groups can be recorded separately, so that in particular individual channel sensitivities to the field height dependency of the illumination intensity can be recorded.

The detection of the field height dependency or the determination of the dependency of illumination intensity contributions of different illumination channels or illumination channel groups during the displacement of the correction field facets can alternatively also be recorded by a simulation, in particular by an optical design calculation of the illumination optics 4 .

Such simulations can also be based on measured values, for example field height dependencies of correction field facet displacement positions, which were measured for a specific, detected spatial dependency of a light source illumination parameter. Such a measurement with a specific spatial dependency can then be converted into a dependency for a different spatial dependency of the light source illumination parameter by simulation and, for example, by including optical design data of the illumination optics.

When determining the displacement positions of the correction field facets 25, a target gradient m' of the field height dependence of the illumination intensity over the object field 5 can also be specified. In the course of determining the displacement position, the field height dependency of the illumination intensity on the +/-x displacement position and the +/-y displacement position of the respective correction field facet 25 is then determined. A predetermined number of correction field facets 25 can be used here, for example five, ten, 25, 50 or even more correction field facets 25.

The respective field height dependencies can be carried out, for example, by measuring the illumination intensity dependencies at a number of field positions that differ in their x-coordinate.

The acquisition and measurement steps 46, 46a and 47 as well as the recording and determination steps 46b, 46d and 47a, 47c can be carried out with a given repetition rate and with a given field height resolution along the x-coordinate, which determines the quality of the determination to achieve the displacement positions x ₀ , y ₀ of the correction field facets 25 required for the target distribution S(x).

The detection step 48 and the transfer step 49 are carried out regularly during operation of the projection exposure system 1, for example every minute, once a day or once at the beginning of a respective production shift.

The result of the assignment step 47c is sets of displacement positions x ₀ , y ₀ of the respective correction field facet 25 for reaching the respective target gradient m'. Corresponding displacement position determination strategies can be carried out to correct higher orders of the field height dependence of the illumination intensity, for example to correct corresponding second-order contributions (cf. 14 ).

In the case of projection exposure using the projection exposure system 1, an illumination geometry is initially set using the setting method explained above. Then at least part of the reticle 7 in the object field 5 is imaged onto a region of the light-sensitive layer on the wafer 13 in the image field 11 for the lithographic production of a microstructured or nanostructured component, in particular a semiconductor component, for example a microchip. In this case, the reticle 7 and the wafer 13 are continuously moved in the y-direction in scanner operation, synchronized in terms of time.

QUOTES INCLUDED IN DESCRIPTION

This list of documents cited by the applicant was generated automatically and is included solely for the better information of the reader. The list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions.

Patent Literature Cited

• WO 2016128253 A1 [0002, 0005, 0010, 0026, 0058, 0080]
• US 7362413 B2 [0005, 0095, 0123]
• DE 102008001553 A1 [0005]
• US 9310692 B2 [0005]
• US 6859515 B2 [0020]
• EP 1225481A [0020]
• WO 2009100856 A1 [0026]
• US 6438199 B1 [0026]
• US 6658084 B2 [0026]
• DE 102017221746 A1 [0093]
• DE 102018212073 A1 [0093, 0094]

Claims (14)

Method for specifying a target distribution S(x) of an illumination intensity (I) that can be specified by means of illumination optics (4) over a field height (x) of a field (5, 11) of a projection exposure system (1), the illumination optics (4) has: - with a field facet mirror (19) with a plurality of field facets (25), arranged in the area of a field plane of the illumination optics (4), - with a pupil facet mirror (20) with a plurality of pupil facets (29), arranged in the area of a pupil plane the illumination optics (4), - wherein each of the field facets (25) serves to transfer useful illumination light (16) from a light source (2) to one of the pupil facets (29), - wherein a respective useful light is Illuminating light partial beams (16 _i ) are guided between the light source (2) and the object field (5) via exactly one field facet (25) and exactly one pupil facet (29), - with one in the respective illumination channel (16 _i ) of the field facet (25 ) downstream transmission optics (21) for superimposed imaging of the field facets (25) in the object field (5), - the transmission optics (21) for each illumination channel (16 _i ) one of the pupil facets (29) for transferring the partial illumination light beam (16;) from the field facet (25) to the object field (5), - with a correction device with correction elements (25, 29) for influencing a field height dependence of an actual illumination intensity (I) via the field height ( x), with the following steps: - detecting (46) an illumination parameter s of a light source (2) of the projection exposure system (1), - determining (48), depending on the at least one detected illumination parameter s, of target displacement positions of at least some of the correction elements (25) to achieve the specified target distribution (S(x)), - transferring (49) the correction elements (25) to the displacement position determined in each case, so that the specified target distribution (S(x)) results. procedure after claim 1 , - wherein at least some of the pupil facets (29) can be used in the form of correction pupil facets as correction elements of the correction device, - wherein at least some of the field facets in the form of correction field facets (25) can be used as correction elements of the correction device can be used, the correction field facets (25) being assigned to the correction pupil facets (29) via respective illumination channels (16 _i ), the following step being additionally carried out: - detecting (47) a field height dependency (I(x)) an illumination of the correction pupil facets (29) from displacement positions (+/-x, +/-y) of at least some field facets (25) as correction field facets, which are assigned to the correction pupil facets (29) via respective illumination channels (16i), - wherein for determining (48) the target displacement positions of the correction elements, determining, depending on the detected illumination parameter s and the detected field height dependency (I(x)), the target displacement positions (x ₀ , y ₀ ) of at least some of the correction field facets (25) to achieve the specified target distribution (S(x)), - the correction field facets (25) being transferred to the respectively determined displacement position in order to transfer (49) the correction elements (25). (x ₀ ,y ₀ ) occurs. procedure after claim 2 , characterized in that the detection (46) of the location dependency (s(x)) of the light source illumination parameter and/or the detection (47) of the field height dependency (I(x)) of the illumination of the correction pupil facets (29) via a field height-dependent dose measurement of the illumination takes place in an object plane (6) in which the object field (5) is arranged and/or in an image plane (12) in which an image field (11) of the projection exposure system is arranged. Procedure according to one of Claims 1 until 3 , characterized by a specification (45) of a target illumination angle distribution over the object field (5). Procedure according to one of claims 2 until 4 , characterized in that when determining (49) the target displacement positions of the correction field facets (25) - a target gradient (m') of a linear correction contribution (K(x)) of the field height dependence of an illumination intensity over the object field (5 ) and/or is specified via the image field (11), - a field height dependence (I _k (x)) of the illumination intensity is determined from a displacement position of a respective correction field facet (25), - sets of displacement positions (x ₀ , y ₀ ) of the respective correction field facets (25) to achieve the target slope (m'). Procedure according to one of claims 2 until 5 , characterized in that when detecting (47) the field height dependency and / or determining (48) the displacement positions of the correction field facets (25) illumination intensity contributions of different illumination channels (16 _i ) or from Illumination channel groups are recorded separately. Procedure according to one of claims 2 until 6 , characterized in that when detecting (47) the field height dependency and/or when determining (48) the displacement positions of the correction field facets (25), illumination intensity contributions of different illumination channels (16 _i ) or illumination channel groups are recorded by simulation. Illumination optics (4) for EUV projection lithography for carrying out a method according to one of Claims 1 until 7 , characterized by at least one sensor device (35; 40; 41; 42) for detecting the light source illumination parameter s and for detecting the field height dependence of the illumination intensity of a field (5, 11) of the projection exposure system (1). Illumination optics (4) after claim 8 , characterized by at least one sensor device (35; 40; 41; 42) for detecting the field height dependency of the illumination of the correction pupil facets on the displacement positions of at least some field facets as correction field facets (25). Illumination system (3) with an illumination optics (4) according to a Claims 8 or 9 and having a light source (2) for generating the illumination light (16). Optical system with an illumination optics (4) according to one of Claims 8 or 9 and with projection optics (10) for imaging the object field (5) into an image field (11). Projection exposure system (1) with an optical system claim 11 and a light source (2) for generating the illumination light (16), - with an object holder (8) with an object displacement drive (9) for displacing the object (7) along an object displacement direction (y), - with a wafer holder (14) with a Wafer displacement drive (15) for the displacement of a wafer (13) synchronized with the object displacement drive (9). Method for producing a microstructured and/or nanostructured component, having the following steps: - providing a projection exposure system (1). claim 10 - setting an actual illumination setting of an illumination angle distribution and an illumination intensity distribution over the object field (5) in accordance with a target illumination setting within specified tolerance limits by specifying corresponding correction displacement paths for selected correction elements (25) via a correction control device (32) by carrying out the method according to one of Claims 1 until 6 - providing a wafer (13), - providing a lithography mask (7), - projecting at least part of the lithography mask (7) onto an area of a light-sensitive layer of the wafer (13) using the projection optics (10) of the projection exposure system (1) . Component manufactured by a method according to claim 12 .

Images