DE102022206198A1 - Method and device for qualifying a component of a projection exposure system for semiconductor lithography - Google Patents

Abstract

The invention relates to a method for qualifying a component (Mx, 117) of a projection exposure system (1,101) for semiconductor lithography, which is characterized in that the component (Mx, 117) during the qualification of a predetermined area (31) calmed by active noise suppression The invention also relates to a device (30) for qualifying a component (Mx, 117) of a projection exposure system (1,101) for semiconductor lithography, which is characterized in that the device (30) has at least one sound sensor (32) and a sound generator (33) which are designed in such a way that they bring about active noise suppression in a predetermined area (31) of the device (30) for receiving the component (Mx, 117).

Description

The invention relates to a method and a device for qualifying a component of a projection exposure system for semiconductor lithography.

Systems of this type are used to produce extremely fine structures, in particular on semiconductor components or other microstructured components. The functional principle of the systems mentioned is based on producing extremely fine structures down to the nanometer range on an element to be structured that is provided with photosensitive material by means of a generally reduced image of structures on a mask, with a so-called reticle. The minimum dimensions of the structures produced depend directly on the wavelength of the light used. Recently, in addition to light sources with a wavelength of 100 nm to 400 nm, a wavelength range known as the DUV range, light sources with an emission wavelength in the range of a few nanometers, for example between 1 nm and 120 nm, in particular in the range of 13.5 nm, are increasingly being used . This wavelength range is also referred to as the EUV range.

The optical components used for imaging for the application described above must be positioned with the greatest precision in order to be able to ensure adequate imaging quality. In the production of the optical components, high demands are therefore placed on the qualification of the mechatronic systems involved for positioning the optical elements. The qualification devices are decoupled and shielded from the environment as far as possible in order to reduce disruptive influences on the qualification and to ensure the required measurement capability of the systems.

In general, an input of energy into a qualification device leads to deformations or excitations of the component and the device, as a result of which the external energy input masks the recorded measurement signal, ie superimposes it and, in the worst case, limits the measurement accuracy.

Passive and actively controlled damper systems for structure-borne noise decoupling and noise protection hoods and vacuum chambers for shielding against background noise are known from the prior art. Noise protection hoods have the disadvantage that they have to completely and airtightly enclose the component to be measured and the materials of different densities used for broadband shielding of sound energy do not meet the outgassing requirements for high-performance optics, which means there is a risk of damage to the components to be measured, especially the optical elements, increases.

The disadvantage of vacuum chambers is that they cause very high costs in terms of acquisition and operation and greatly restrict accessibility to the measurement object.

The object of the present invention is to specify an improved method and a device which eliminate the disadvantages of the prior art described above.

This object is achieved by a method and a device having the features of the independent claims. The dependent claims relate to advantageous developments and variants of the invention.

A method according to the invention for qualifying a component of a projection exposure apparatus for semiconductor lithography is characterized in that during the qualification the component is surrounded by a predetermined area calmed by active noise suppression. Ideally, this area can be completely quiet, thus enabling the components to be qualified without the influence of ambient noise from the environment. The method can preferably be used in a clean room.

In particular, the component can be designed as a mechatronic component. The requirements for the positioning accuracy of the mechatronic components, in particular those that have optical elements such as mirrors of a projection optics of the projection exposure system, are usually in the picometer range, so that a conversation at room volume would make a measurement of the mechatronic system impossible or at least disruptive . The suppression according to the invention of the background noise, that is to say the ambient noise which can be caused, for example, by the ventilation systems in a clean room, advantageously enables the components to be qualified with the required measurement accuracy.

In a first embodiment of the invention, interfering noise acting on the device from the outside can be detected by a noise sensor. The sound sensor can be in the form of a microphone and can be arranged on an outer frame of the device, with the microphones expediently covering a wide range of sound frequencies zen in a range from 0.25 Hz to 20 kHz, in particular from 10 Hz to 20 kHz.

Furthermore, for noise suppression, counter-sound generated by a sound generator can be directed away from the component. The counter-noise caused by suppression of the background noise acting on the device from sound generators, for example designed as loudspeakers, is expediently directed away from the predetermined area around the component to be qualified, so that no background noise occurs within this area. This is brought about by the alignment of a sound exit opening of the sound generator designed as a sound funnel. With the correct phasing, the background noise and the counter-noise also cancel each other out if the sound generators are directed in the direction of the component.

In addition, a control based on the detected background noise can determine the counter-noise to be caused by the sound generator in such a way that it suppresses the detected background noise acting on the device from the outside. In the ideal case, the detected background noise can be eliminated completely or at least comprehensively in certain frequency ranges.

In a further embodiment, sound from sound outlet openings of an additional sound generator, which are aligned in the direction of the component, can be used to excite the component—which is desirable in this case.

This can be arranged on the same frame as the sound generators in order to suppress the background noise acting on the device from the outside. The excitation can be used, for example, to measure a so-called system response of the mechatronic components and specifically excite specific natural frequencies. In particular, burst signals or sweep signals or any other type of signals can also be caused by the loudspeakers. This has the advantage that the interference noise caused by components installed in the projection exposure system can also be simulated in advance during later operation and the effects on the component can be recorded. Furthermore, the device can be used to analyze faults occurring in a projection exposure system by checking the effect of possible causes of a fault.

A device according to the invention for qualifying a component of a projection exposure system for semiconductor lithography is characterized in that the device comprises at least one sound sensor and a sound generator, which are designed in such a way that they cause active noise suppression in a region of the device predetermined for receiving the component.

Furthermore, the component can be arranged in the predetermined area of the device. The component, which can also be embodied as a mechatronic component, and the measuring devices required for the qualification of the component are thus protected from background noise from the area surrounding the device, but are still easily accessible. This advantageously simplifies the qualification of the components.

In addition, a sound outlet opening of the sound generator can be aligned in a direction away from the region of the component. The anti-noise can on the one hand suppress or eliminate the interference noise acting on the components from the outside, and on the other hand the anti-noise is not radiated in the direction of the component, so that the component is not excited and the qualification is therefore not disturbed.

In a further embodiment of the invention, the device can have a first frame for accommodating the sound generator. This frame can be cuboid or spherical, for example, and accommodate the sound generator and, depending on the embodiment, also several sound generators with sound outlet openings directed away from the component. Within this frame, the noise-suppressed predetermined area is formed, in which the component for qualification can be arranged.

Furthermore, the device can have a second frame for accommodating the sound sensor. This second frame can also be cuboid or spherical and can accommodate the sound sensor designed as a microphone or, depending on the embodiment, also other microphones, which are also aligned in such a way that they optimally record the interference noise acting on the device from the outside.

In addition, at least one sound sensor can be arranged directly on the component. This additional sound sensor, for example, can be used to detect residual noise present on the component after a first calculation and generation of counter-noise. The signals obtained in this way can be used to correct the anti-noise signal.

In particular, the component can be arranged within the first frame and the first frame within the second frame. This arrangement has the advantage that the noise detected and before reaching the predetermined area in which the component is arranged, can be suppressed by the sound generator and ideally extinguished.

In a further embodiment of the invention, at least one additional sound generator with a sound exit opening aligned in the direction of the region of the component can be arranged on the first frame. For targeted excitation of the component, this can cause sound signals of different forms, such as individual frequencies or frequency ranges, burst signals, sweep signals or any other type of sound signals. The system response of the component excited by the additional sound generator can be detected by measuring systems arranged on the component and evaluated by a control.

In a further embodiment of the device, it can comprise a control which is designed in such a way that it determines an opposing sound signal for controlling the sound generator on the basis of the detected background noise. These generate an anti-noise which, according to the invention, suppresses or completely eliminates the background noise.

• 1 schematisch im Meridionalschnitt eine Projektionsbelichtungsanlage für die EUV-Projektionslithografie,
• 2 schematisch im Meridionalschnitt eine Projektionsbelichtungsanlage für die DUV-Projektionslithografie, und
• 3 eine schematische Darstellung einer erfindungsgemäßen Vorrichtung.

Exemplary embodiments and variants of the invention are explained in more detail below with reference to the drawing. Show it

• 1 a schematic meridional section of a projection exposure system for EUV projection lithography,
• 2 a schematic meridional section of a projection exposure system for DUV projection lithography, and
• 3 a schematic representation of a device according to the invention.

The following are first with reference to the 1 the essential components of a projection exposure system 1 for microlithography are described as an example. The description of the basic structure of the projection exposure system 1 and its components are not understood to be restrictive.

One embodiment of an illumination system 2 of the projection exposure system 1 has, in addition to a radiation source 3, illumination optics 4 for illuminating an object field 5 in an object plane 6. In an alternative embodiment, the light source 3 can also be provided as a separate module from the rest of the illumination system. In this case the lighting system does not include the light source 3 .

A reticle 7 arranged in the object field 5 is illuminated. The reticle 7 is held by a reticle holder 8 . The reticle holder 8 can be displaced in particular in a scanning direction via a reticle displacement drive 9 .

In the 1 a Cartesian xyz coordinate system is drawn in for explanation. The x-direction runs perpendicular to the plane of the drawing. The y-direction is horizontal and the z-direction is vertical. The scanning direction is in the 1 along the y-direction. The z-direction runs perpendicular to the object plane 6.

The projection exposure system 1 includes projection optics 10. The projection optics 10 are used to image the object field 5 in an image field 11 in an image plane 12. The image plane 12 runs parallel to the object plane 6. Alternatively, there is also an angle other than 0° between the object plane 6 and the Image plane 12 possible.

A structure on the reticle 7 is imaged onto a light-sensitive layer of a wafer 13 arranged in the region of the image field 11 in the image plane 12 . The wafer 13 is held by a wafer holder 14 . The wafer holder 14 can be displaced in particular along the y-direction via a wafer displacement drive 15 . The displacement of the reticle 7 via the reticle displacement drive 9 on the one hand and the wafer 13 on the other hand via the wafer displacement drive 15 can be synchronized with one another.

The radiation source 3 is an EUV radiation source. The radiation source 3 emits in particular EUV radiation 16, which is also referred to below as useful radiation, illumination radiation or illumination light. In particular, the useful radiation has a wavelength in the range between 5 nm and 30 nm. The radiation source 3 can be a plasma source, for example an LPP source (laser produced plasma, plasma generated with the aid of a laser) or a DPP Source (Gas Discharged Produced Plasma). It can also be a synchrotron-based radiation source. The radiation source 3 can be a free-electron laser (free-electron laser, FEL).

The illumination radiation 16 emanating from the radiation source 3 is bundled by a collector 17 . The collector 17 can be a collector with one or more ellipsoidal and/or hyperboloidal reflection surfaces. The at least one reflection surface of the collector 17 can in grazing incidence (Grazing Incidence, GI), ie with angles of incidence greater than 45° relative to the normal direction of the mirror surface, or in normal incidence (Normal Incidence, NI), ie with angles of incidence smaller than 45°, are exposed to the illumination radiation 16 . The collector 17 can be structured and/or coated on the one hand to optimize its reflectivity for the useful radiation and on the other hand to suppress stray light.

After the collector 17, the illumination radiation 16 propagates through an intermediate focus in an intermediate focal plane 18. The intermediate focal plane 18 can represent a separation between a radiation source module, comprising the radiation source 3 and the collector 17, and the illumination optics 4.

The illumination optics 4 comprises a deflection mirror 19 and a first facet mirror 20 downstream of this in the beam path. The deflection mirror 19 can be a plane deflection mirror or alternatively a mirror with an effect that influences the bundle beyond the pure deflection effect. Alternatively or additionally, the deflection mirror 19 can be designed as a spectral filter, which separates a useful light wavelength of the illumination radiation 16 from stray light of a different wavelength. If the first facet mirror 20 is arranged in a plane of the illumination optics 4 which is optically conjugate to the object plane 6 as the field plane, it is also referred to as a field facet mirror. The first facet mirror 20 includes a multiplicity of individual first facets 21, which are also referred to below as field facets. Of these facets 21 are in the 1 only a few shown as examples.

The first facets 21 can be embodied as macroscopic facets, in particular as rectangular facets or as facets with an arcuate or part-circular edge contour. The first facets 21 can be embodied as planar facets or alternatively as convexly or concavely curved facets.

Like for example from the DE 10 2008 009 600 A1 is known, the first facets 21 themselves can each also be composed of a large number of individual mirrors, in particular a large number of micromirrors. The first facet mirror 20 can be embodied in particular as a microelectromechanical system (MEMS system). For details refer to the DE 10 2008 009 600 A1 referred.

The illumination radiation 16 runs horizontally between the collector 17 and the deflection mirror 19, ie along the y-direction.

A second facet mirror 22 is arranged downstream of the first facet mirror 20 in the beam path of the illumination optics 4. If the second facet mirror 22 is arranged in a pupil plane of the illumination optics 4, it is also referred to as a pupil facet mirror. The second facet mirror 22 can also be arranged at a distance from a pupil plane of the illumination optics 4 . In this case, the combination of the first facet mirror 20 and the second facet mirror 22 is also referred to as a specular reflector. Specular reflectors are known from US 2006/0132747 A1 , the EP 1 614 008 B1 and the U.S. 6,573,978 .

The second facet mirror 22 includes a plurality of second facets 23. In the case of a pupil facet mirror, the second facets 23 are also referred to as pupil facets.

The second facets 23 can also be macroscopic facets, which can have round, rectangular or hexagonal borders, for example, or alternatively facets composed of micromirrors. In this regard, also on the DE 10 2008 009 600 A1 referred.

The second facets 23 can have plane or alternatively convexly or concavely curved reflection surfaces.

The illumination optics 4 thus forms a double-faceted system. This basic principle is also known as a honeycomb condenser (Fly's Eye Integrator).

It can be advantageous not to arrange the second facet mirror 22 exactly in a plane which is optically conjugate to a pupil plane of the projection optics 10 . In particular, the pupil facet mirror 22 can be arranged tilted relative to a pupil plane of the projection optics 10, as is the case, for example, in FIG DE 10 2017 220 586 A1 is described.

The individual first facets 21 are imaged in the object field 5 with the aid of the second facet mirror 22 . The second facet mirror 22 is the last beam-forming mirror or actually the last mirror for the illumination radiation 16 in the beam path in front of the object field 5.

In another embodiment of the illumination optics 4 that is not shown, transmission optics can be arranged in the beam path between the second facet mirror 22 and the object field 5 , which particularly contributes to the imaging of the first facets 21 in the object field 5 . The relay optics can do exactly one mirror, dude but natively also have two or more mirrors, which are arranged one behind the other in the beam path of the illumination optics 4 . The transmission optics can in particular comprise one or two mirrors for normal incidence (NI mirror, normal incidence mirror) and/or one or two mirrors for grazing incidence (GI mirror, gracing incidence mirror).

The illumination optics 4 has the version in which 1 shown, exactly three mirrors after the collector 17, namely the deflection mirror 19, the field facet mirror 20 and the pupil facet mirror 22.

In a further embodiment of the illumination optics 4, the deflection mirror 19 can also be omitted, so that the illumination optics 4 can then have exactly two mirrors after the collector 17, namely the first facet mirror 20 and the second facet mirror 22.

The imaging of the first facets 21 by means of the second facets 23 or with the second facets 23 and transmission optics in the object plane 6 is generally only an approximate imaging.

The projection optics 10 includes a plurality of mirrors Mi, which are numbered consecutively according to their arrangement in the beam path of the projection exposure system 1 .

At the in the 1 example shown, the projection optics 10 includes six mirrors M1 to M6. Alternatives with four, eight, ten, twelve or another number of mirrors Mi are also possible. The penultimate mirror M5 and the last mirror M6 each have a passage opening for the illumination radiation 16. The projection optics 10 are doubly obscured optics. The projection optics 10 has an image-side numerical aperture which is greater than 0.5 and which can also be greater than 0.6 and which can be 0.7 or 0.75, for example.

Reflection surfaces of the mirrors Mi can be designed as free-form surfaces without an axis of rotational symmetry. Alternatively, the reflection surfaces of the mirrors Mi can be designed as aspherical surfaces with exactly one axis of rotational symmetry of the reflection surface shape. Just like the mirrors of the illumination optics 4, the mirrors Mi can have highly reflective coatings for the illumination radiation 16. These coatings can be designed as multilayer coatings, in particular with alternating layers of molybdenum and silicon.

The projection optics 10 has a large object-image offset in the y-direction between a y-coordinate of a center of the object field 5 and a y-coordinate of the center of the image field 11. This object-image offset in the y-direction can be something like this be as large as a z-distance between the object plane 6 and the image plane 12.

The projection optics 10 can in particular be anamorphic. In particular, it has different image scales βx, βy in the x and y directions. The two image scales βx, βy of the projection optics 10 are preferably at (βx, βy)=(+/−0.25, +/-0.125). A positive image scale β means an image without image reversal. A negative sign for the imaging scale β means imaging with image inversion.

The projection optics 10 thus leads to a reduction in the ratio 4:1 in the x-direction, ie in the direction perpendicular to the scanning direction.

The projection optics 10 lead to a reduction of 8:1 in the y-direction, ie in the scanning direction.

Other imaging scales are also possible. Image scales with the same sign and absolutely the same in the x and y directions, for example with absolute values of 0.125 or 0.25, are also possible.

The number of intermediate image planes in the x-direction and in the y-direction in the beam path between the object field 5 and the image field 11 can be the same or, depending on the design of the projection optics 10, can be different. Examples of projection optics with different numbers of such intermediate images in the x and y directions are known from U.S. 2018/0074303 A1 .

In each case one of the pupil facets 23 is assigned to precisely one of the field facets 21 in order to form a respective illumination channel for illuminating the object field 5 . In this way, in particular, lighting can result according to Köhler's principle. The far field is broken down into a large number of object fields 5 with the aid of the field facets 21 . The field facets 21 generate a plurality of images of the intermediate focus on the pupil facets 23 assigned to them.

The field facets 21 are each imaged by an associated pupil facet 23 superimposed on the reticle 7 for illuminating the object field 5 . In particular, the illumination of the object field 5 is as homogeneous as possible. It preferably has a uniformity error of less than 2%. Field uniformity can be over the superimposition of different lighting channels can be achieved.

The illumination of the entrance pupil of the projection optics 10 can be defined geometrically by an arrangement of the pupil facets. The intensity distribution in the entrance pupil of the projection optics 10 can be set by selecting the illumination channels, in particular the subset of the pupil facets that guide light. This intensity distribution is also referred to as an illumination setting.

A likewise preferred pupil uniformity in the area of defined illuminated sections of an illumination pupil of the illumination optics 4 can be achieved by redistributing the illumination channels.

Further aspects and details of the illumination of the object field 5 and in particular the entrance pupil of the projection optics 10 are described below.

The projection optics 10 can in particular have a homocentric entrance pupil. This can be accessible. It can also be inaccessible.

The entrance pupil of the projection optics 10 cannot regularly be illuminated exactly with the pupil facet mirror 22 . When imaging the projection optics 10, which telecentrically images the center of the pupil facet mirror 22 onto the wafer 13, the aperture rays often do not intersect at a single point. However, a surface can be found in which the distance between the aperture rays, which is determined in pairs, is minimal. This surface represents the entrance pupil or a surface conjugate to it in position space. In particular, this surface shows a finite curvature.

The projection optics 10 may have different positions of the entrance pupil for the tangential and for the sagittal beam path. In this case, an imaging element, in particular an optical component of the transmission optics, should be provided between the second facet mirror 22 and the reticle 7 . With the help of this optical element, the different positions of the tangential entrance pupil and the sagittal entrance pupil can be taken into account.

At the in the 1 In the arrangement of the components of the illumination optics 4 shown, the pupil facet mirror 22 is arranged in a surface conjugate to the entrance pupil of the projection optics 10 . The field facet mirror 20 is arranged tilted to the object plane 6 . The first facet mirror 20 is tilted relative to an arrangement plane that is defined by the deflection mirror 19 .

The first facet mirror 20 is tilted relative to an arrangement plane that is defined by the second facet mirror 22 .

In 2 FIG. 1 schematically shows a further projection exposure system 101 for DUV projection lithography in a meridional section, in which the invention can also be used.

The structure of the projection exposure system 101 and the principle of imaging is comparable to that in 1 structure and procedure described. Same components are compared with a by 100 1 increased reference numerals denoted, the reference numerals in 2 so start with 101.

In contrast to one as in 1 Due to the longer wavelength of the DUV radiation 116 used as useful light in the range from 100 nm to 300 nm, in particular 193 nm, the EUV projection exposure system 1 described above can be used in the DUV projection exposure system 101 for imaging or for illumination, refractive, diffractive and/or reflective optical elements 117, such as lenses, mirrors, prisms, end plates and the like can be used. The projection exposure system 101 essentially comprises an illumination system 102, a reticle holder 108 for receiving and precisely positioning a reticle 107 provided with a structure, by means of which the later structures on a wafer 113 are determined, a wafer holder 114 for holding, moving and precisely positioning of this wafer 113 and a projection lens 110, with a plurality of optical elements 117 which are held in a lens housing 119 of the projection lens 110 via sockets 118.

The illumination system 102 provides DUV radiation 116 required for imaging the reticle 107 on the wafer 113 . A laser, a plasma source or the like can be used as the source for this radiation 116 . The radiation 116 is shaped in the illumination system 102 via optical elements in such a way that the DUV radiation 116 has the desired properties in terms of diameter, polarization, shape of the wavefront and the like when it strikes the reticle 107 .

The structure of the subsequent projection optics 110 with the lens housing 119 differs except for the additional use of refractive optical elements 117 such as lenses, Prisms, end plates in principle not from the in 1 described structure and is therefore not described further.

3 shows a schematic representation of a device 30 according to the invention, which has a mechatronic component to be qualified Mx, 117, as in FIG 1 and the 2 explained, in the device 30 represents. The device 30 comprises a first frame 35 which surrounds the component Mx, 117 in all spatial directions. The frame 35 defines a predetermined area 31 in which the external noise acting on the device 30 is suppressed to a minimum or completely eliminated. Sound generators designed as loudspeakers 33 are arranged on this first frame 35 and are aligned in such a way that their sound outlet openings 39 are directed in a direction away from component Mx, 117 . In the in the 3 trained embodiment 35 loudspeakers 33 are arranged at each corner of the cuboid first frame 35 of the device 30 and in the middle of the edges of the frame. Furthermore, the device 30 comprises a second frame 36 which is likewise constructed in the shape of a parallelepiped and on which sound sensors which are likewise constructed as microphones 32 are arranged at all corners and in the middle of all edges. These are arranged in such a way that the background noise acting on the device 30 from outside the frame 36 can be completely detected over a large bandwidth in the range from 0.25 Hz and 20 kHz, in particular in a range from 10 Hz to 20 kHz. The microphones 32 and the loudspeakers 33 are connected to a control 40, it being possible for the connection to be in the form of lines or wireless connection technology. From the signals detected by the microphones 32, the control 40 determines an anti-sound signal, which is routed to the loudspeakers 33 as an input signal. The background noise detected by the microphones 32 is suppressed or completely eliminated, i.e. neutralized, by the counter-noise generated by the loudspeakers 33, so that within the first frame 35, in which the component Mx, 117 to be qualified is arranged, there is no or almost no measurement influencing background noise acts on the component Mx, 117. This has the advantage that the components Mx, 117 and the measuring devices required for the qualification (not shown) are accessible throughout the qualification and the construction and arrangement of the measuring devices is also advantageously simplified.

Furthermore, a structure of the device 30 without outgassing materials and the adaptation of the device 30 to different environmental conditions and components Mx, 117 are reduced to a minimum. To further improve the soundproofing, a passively acting soundproofing hood 37 can optionally be arranged around the component Mx, 117 in addition to the device 30 for active noise suppression. Due to the lower requirements, this can be designed in a simpler way or, for example, only be designed for a specific frequency range. Alternatively or additionally, a further soundproofing 38 can also be arranged around the entire device 30 or the space in which the device 30 is installed can itself be designed to dampen the interfering noise acting on the device 30 from the outside. The soundproofing hood 37 and the soundproofing 38 enclosing the entire device 30 are in FIG 3 shown dashed. Alternatively, the microphones 32 and loudspeakers 33 can also be arranged on a housing or on the walls of a room or part of a room. In the case of a room affected by noise from only one side, a device 30 for canceling the sound on this one side may be sufficient to quiet the entire room.

Furthermore, 35 more are on the first frame in which 3 Loudspeakers 34, also shown in dashed lines, are arranged, which are aligned with their sound outlet openings 39 in the direction of component Mx, 117. The loudspeakers 34 can excite the component Mx, 117, which in the predetermined area 31 of the device 30, as explained above, is exposed to only a minimum of noise, with different excitation spectra via sound and the system response of the component Mx, 117 with the Detect component Mx, 117 arranged sensors (not shown). This method can advantageously be used to qualify the components Mx, 117, to examine the effects of noise excitations present during the operation of a projection exposure system on the component Mx, 117, or to troubleshoot in the event of a fault in a projection exposure system 1, 101 already installed at the customer.

Reference List

1

projection exposure system

2

lighting system

3

radiation source

4

lighting optics

5

object field

6

object level

7

reticle

8th

reticle holder

9

reticle displacement drive

10

projection optics

11

image field

12

picture plane

13

wafers

14

wafer holder

15

Wafer displacement drive

16

EUV radiation

17

collector

18

intermediate focal plane

19

deflection mirror

20

faceted mirror

21

facets

22

faceted mirror

23

facets

30

contraption

31

Predetermined area

32

microphone

33

Loudspeakers to extinguish

34

speaker for stimulation

35

frame speaker

36

frame microphones

37

soundproof hood

38

sound insulation

39

sound outlet opening

40

control

101

projection exposure system

102

lighting system

107

reticle

108

reticle holder

110

projection optics

113

wafers

114

wafer holder

116

DUV radiation

117

optical element

118

frames

119

lens body

M1-M6

mirror

QUOTES INCLUDED IN DESCRIPTION

This list of documents cited by the applicant was generated automatically and is included solely for the better information of the reader. The list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions.

Patent Literature Cited

• DE 102008009600 A1 [0037, 0041]
• US 2006/0132747 A1 [0039]
• EP 1614008 B1 [0039]
• US6573978 [0039]
• DE 102017220586 A1 [0044]
• US 2018/0074303 A1 [0058]

Claims (14)

Method for qualifying a component (Mx, 117) of a projection exposure system (1,101) for semiconductor lithography, characterized in that the component (Mx, 117) during the qualification is surrounded by a predetermined area (31) calmed by active noise suppression. procedure after claim 1 , characterized in that the component (Mx, 117) is designed as a mechatronic component. Procedure according to one of Claims 1 or 2 , characterized in that external noise acting on the device (30) is detected by a sound sensor (32). Method according to one of the preceding claims, characterized in that counter-sound generated by a sound generator (33) for noise suppression is directed away from the component (Mx, 117). procedure after claim 4 , characterized in that a control (40) on the basis of the detected background noise determines the counter-sound caused by the sound generator (33) in such a way that it suppresses the detected background noise acting on the device (30) from the outside. Method according to one of the preceding claims, characterized in that sound from sound exit openings (39) aligned in the direction of the component (Mx, 117) of an additional sound generator (34) is used to excite the component (Mx, 117). Device (30) for qualifying a component (Mx, 117) of a projection exposure system (1,101) for semiconductor lithography, characterized in that the device (30) comprises at least one sound sensor (32) and a sound generator (33), which are designed in such a way that these bring about active noise suppression in a predetermined area (31) of the device (30) for receiving the component (Mx, 117). Device (30) after claim 7 , characterized in that a sound outlet opening (39) of the sound generator (33) is aligned in a direction away from the area (31). Device (30) after claim 7 or claim 8 , characterized in that the device (30) has a first frame (35) for receiving the sound generator (33). Device (30) according to one of Claims 7 until 9 , characterized in that the device (30) has a second frame (36) for receiving the sound sensors (32). Device (30) according to one of Claims 7 until 10 , characterized in that at least one sound sensor (32) is arranged directly on the component (Mx, 117). Device (30) according to one of Claims 7 until 11 , characterized in that the area (31) is arranged inside the first frame (35) and the first frame (35) inside the second frame (36). Device (30) according to one of Claims 7 until 12 , characterized in that at least one additional sound generator (34) with a sound outlet opening (39) aligned in the direction of the region (31) is arranged on the first frame (35). Device (30) according to one of Claims 7 until 13 , characterized in that the device (30) comprises a control (40) which is designed in such a way that it determines a counter-sound signal for the control (40) of the sound generator (33) on the basis of the detected background noise.

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